BLL9G1214L-600U [ETC]

BLL9G1214L-600/SOT502/TRAY;
BLL9G1214L-600U
型号: BLL9G1214L-600U
厂家: ETC    ETC
描述:

BLL9G1214L-600/SOT502/TRAY

文件: 总13页 (文件大小:1225K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BLL9G1214L-600;  
BLL9G1214LS-600  
LDMOS L-band radar power transistor  
Rev. 2 — 6 November 2018  
Product data sheet  
1. Product profile  
1.1 General description  
600 W LDMOS power transistor for L-band radar applications in the frequency range from  
1.2 GHz to 1.4 GHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 400 mA; in a class-AB demo  
test circuit.  
Test signal  
f
VDS  
(V)  
32  
PL(3dB)  
(W)  
Gp  
ηD  
(GHz)  
(dB)  
19  
(%)  
60  
pulsed RF  
1.2 to 1.4  
600  
1.2 Features and benefits  
High efficiency  
Excellent ruggedness  
Designed for L-band operation  
Excellent thermal stability  
Easy power control  
Integrated dual sided ESD protection enables excellent off-state isolation  
High flexibility with respect to pulse formats  
Internally matched for ease of use  
For RoHS compliance see the product details on the Ampleon website  
1.3 Applications  
L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
BLL9G1214L-600 (SOT502A)  
1
2
3
drain  
gate  
1
1
3
2
[1]  
source  
2
3
sym112  
BLL9G1214LS-600 (SOT502B)  
1
2
3
drain  
gate  
1
1
3
2
[1]  
source  
2
3
sym112  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLL9G1214L-600  
BLL9G1214LS-600  
-
-
flanged ceramic package; 2 mounting holes; 2 leads  
earless flanged ceramic package; 2 leads  
SOT502A  
SOT502B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Min  
-
Max  
65  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
VGS  
Tstg  
6  
65  
-
+13  
+150  
225  
V
C  
C  
[1]  
Tj  
[1] Continuous use at maximum temperature will affect the reliability. For details refer to the online MTF  
calculator.  
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
2 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ  
Unit  
Zth(j-mb) transient thermal impedance from junction Tcase = 85 C; PL = 600 W  
to mounting base  
tp = 100 s; = 10 %  
0.11 K/W  
0.15 K/W  
0.17 K/W  
0.15 K/W  
tp = 300 s; = 10 %  
tp = 500 s; = 10 %  
tp = 100 s; = 20 %  
6. Characteristics  
Table 6.  
DC characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ  
Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 4.5 mA  
65  
1.5  
-
-
-
V
VGS(th)  
IDSS  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 450 mA  
VGS = 0 V; VDS = 32 V  
VGS = VGS(th) + 3.75 V;  
2
-
2.5  
5
V
A  
A
IDSX  
drain cut-off current  
-
87  
-
VDS = 10 V  
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
-
-
-
-
400  
-
nA  
S
forward transconductance  
VDS = 10 V; ID = 450 mA  
4.2  
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
ID = 15.75 A  
0.026 -  
Table 7.  
Test signal: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 32 V; IDq = 400 mA;  
case = 25 °C; unless otherwise specified, in a class-AB production circuit.  
RF characteristics  
T
Symbol  
Parameter  
Conditions Min Typ Max  
Unit  
dB  
%
Gp  
power gain  
PL = 600 W 16.8 19  
-
-
-
D  
drain efficiency  
input return loss  
PL = 600 W 56  
60  
RLin  
PL = 600 W  
PL = 600 W  
PL = 600 W  
PL = 600 W  
-
-
-
-
-
7  
dB  
dB  
ns  
Pdroop(pulse) pulse droop power  
0.2 0.5  
tr  
rise time  
6
50  
50  
-
tf  
fall time  
6
ns  
PL(2dB)  
output power at 2 dB gain compression  
575  
W
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
3 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
7. Test information  
7.1 Ruggedness in class-AB operation  
The BLL9G1214L-600 and BLL9G1214LS-600 are capable of withstanding a load  
mismatch corresponding to VSWR = 10 : 1 through all phases under the following  
conditions: VDS = 32 V; IDq = 400 mA; PL = 600 W; tp = 300 s; = 10 %.  
7.2 Impedance information  
Table 8.  
f
Typical impedance  
ZS  
ZL  
(GHz)  
1.2  
(Ω)  
(Ω)  
1.23 j5.79  
7.10 j3.33  
1.31 j1.89  
1.14 j1.39  
1.62 j1.63  
2.36 j1.56  
1.3  
1.4  
drain  
Z
L
gate  
Z
S
001aaf059  
Fig 1. Definition of transistor impedance  
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
4 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
7.3 Test circuit  
40 mm  
40 mm  
C9  
C6  
C8  
C7  
C2  
C3 C4  
R1  
60 mm  
C1  
C5  
C13  
C12  
C10  
C11  
amp00535  
Printed-Circuit Board (PCB): Rogers 4360; thickness = 0.61 mm; r = 6.15; thickness of copper  
plating = 35 m  
See Table 9 for a list of components.  
Fig 2. Component layout for class-AB production test circuit  
Table 9.  
List of components  
For test circuit see Figure 2.  
Component Description  
Value  
Remarks  
C1, C4, C5, C6, C10 multilayer ceramic chip capacitor 56 pF  
ATC 100B  
C2, C8, C12  
multilayer ceramic chip capacitor 10 F  
Murata:  
GRM55DR61H106KA88L  
C3, C7, C11  
C9, C13  
R1  
multilayer ceramic chip capacitor 910 pF  
ATC 100B  
SMD 0603  
electrolytic capacitor  
resistor  
100 F, 63 V  
5   
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
5 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
7.4 Graphical data  
amp00536  
amp00537  
25  
20  
15  
10  
5
22  
20  
18  
16  
14  
12  
70  
G
G
η
D
(%)  
p
p
(dB)  
(dB)  
60  
50  
40  
30  
20  
(1)  
(2)  
(3)  
(2)  
(1)  
(4)  
(5)  
(6)  
0
0
100 200 300 400 500 600 700 800  
(W)  
1150  
1200  
1250  
1300  
1350  
1400  
1450  
P
f (MHz)  
L
IDq = 400 mA; tp = 300 s; = 10 %; f = 1300 MHz.  
VDS = 32 V; IDq = 400 mA; tp = 300 s; = 10 %;  
PL = 600 W.  
(1) VDS = 32 V  
(2) VDS = 30 V  
(3) VDS = 28 V  
(4) VDS = 26 V  
(5) VDS = 24 V  
(6) VDS = 22 V  
(1) gain  
(2) efficiency  
Fig 3. Power gain as a function of output power;  
typical values  
Fig 4. Power gain and drain efficiency as function of  
frequency; typical values  
amp00538  
amp00539  
70  
25  
η
G
p
(dB)  
D
(%)  
(3)  
(2)  
(1)  
60  
50  
40  
30  
20  
10  
20  
15  
10  
5
(3)  
(2)  
(1)  
0
0
100 200 300 400 500 600 700 800  
0
100 200 300 400 500 600 700 800  
P
(W)  
P (W)  
L
L
VDS = 32 V; IDq = 400 mA; tp = 300 s; = 10 %.  
VDS = 32 V; IDq = 400 mA; tp = 300 s; = 10 %.  
(1) f = 1200 MHz  
(2) f = 1300 MHz  
(3) f = 1400 MHz  
(1) f = 1200 MHz  
(2) f = 1300 MHz  
(3) f = 1400 MHz  
Fig 5. Drain efficiency as a function of output power;  
typical values  
Fig 6. Power gain as a function of output power;  
typical values  
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
6 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
amp00540  
amp00541  
800  
800  
P
P
L
L
(1)  
(3)  
(2)  
(W)  
(W)  
(2)  
(3)  
600  
600  
(1)  
400  
200  
0
400  
200  
0
0
2.5  
5
7.5  
10 12.5 15 17.5 20  
P (W)  
1150  
1200  
1250  
1300  
1350  
1400  
1450  
f (MHz)  
i
VDS = 32 V; IDq = 400 mA; tp = 300 s; = 10 %.  
VDS = 32 V; IDq = 400 mA; tp = 300 s; = 10 %.  
(1) f = 1200 MHz  
(2) f = 1300 MHz  
(3) f = 1400 MHz  
(1) PL(1dB)  
(2) PL(2dB)  
(3) PL(3dB)  
Fig 7. Output power as a function of input power;  
typical values  
Fig 8. Output power as a function of frequency;  
typical values  
amp00542  
800  
P
L
(W)  
(1)  
(2)  
600  
(3)  
(4)  
(5)  
400  
200  
0
(6)  
0
2
4
6
8
10  
P (W)  
i
IDq = 400 mA; tp = 300 s; = 10 %; f = 1300 MHz.  
(1) VDS = 32 V  
(2) VDS = 30 V  
(3) VDS = 28 V  
(4) VDS = 26 V  
(5) VDS = 24 V  
(6) VDS = 22 V  
Fig 9. Output power as a function of input power; typical values  
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
7 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
8. Package outline  
Flanged ceramic package; 2 mounting holes; 2 leads  
SOT502A  
D
A
F
3
D
U
1
B
1
q
c
C
1
L
p
E
E
1
H
U
2
w
M
M
M
B
A
1
A
2
w
b
M
M
C
Q
2
0
5
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT  
1
1
1
2
1
12.83  
12.57  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
19.94  
3.38  
3.12  
1.70  
1.45  
0.15  
0.08  
1.14  
5.33  
34.16 9.91  
33.91 9.65  
27.94  
1.100  
0.25  
0.01  
0.51  
0.02  
mm  
0.89 18.92 4.32  
0.505  
0.495  
0.186  
0.135  
0.788 0.786 0.374 0.375  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
0.785  
0.133 0.067  
0.123 0.057  
0.006  
0.003  
0.045  
0.210  
1.345 0.390  
1.335 0.380  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
03-01-10  
12-05-02  
SOT502A  
Fig 10. Package outline SOT502A  
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
8 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
Earless flanged ceramic package; 2 leads  
SOT502B  
D
A
F
3
1
D
D
1
c
U
1
L
E
E
H
U
1
2
2
w
b
M
M
D
Q
2
0
5
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT  
1
1
1
2
12.83  
12.57  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
19.94  
1.70  
1.45  
0.15  
0.08  
1.14  
5.33  
20.70 9.91  
20.45 9.65  
0.25  
mm  
0.89 18.92 4.32  
0.505  
0.495  
0.186  
0.135  
0.788 0.786 0.374 0.375  
0.785  
0.067  
0.057  
0.006  
0.003  
0.045  
0.210  
0.815 0.390  
0.805 0.380  
0.010  
inches  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
07-05-09  
12-05-02  
SOT502B  
Fig 11. Package outline SOT502B  
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
9 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
9. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
Table 10. ESD sensitivity  
ESD model  
Class  
C2A [1]  
2 [2]  
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002  
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001  
[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V.  
[2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.  
10. Abbreviations  
Table 11. Abbreviations  
Acronym  
ESD  
Description  
ElectroStatic Discharge  
L-band  
LDMOS  
MTF  
Long wave Band  
Laterally Diffused Metal-Oxide Semiconductor  
Median Time to Failure  
RoHS  
SMD  
Restriction of Hazardous Substances  
Surface Mounted Device  
Voltage Standing-Wave Ratio  
VSWR  
11. Revision history  
Table 12. Revision history  
Document ID  
Release date Data sheet status  
20181106 Product data sheet  
Figure 4 on page 6: corrected value PL to 600 W  
20171127 Product data sheet -  
Change notice Supersedes  
BLL9G1214L-600_LS-600 v.2  
Modifications  
- BLL9G1214L-600_LS-600 v.1  
BLL9G1214L-600_LS-600 v.1  
-
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
10 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.ampleon.com.  
Ampleon product can reasonably be expected to result in personal injury,  
12.2 Definitions  
death or severe property or environmental damage. Ampleon and its  
suppliers accept no liability for inclusion and/or use of Ampleon products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Ampleon product is suitable and  
fit for the customer’s applications and products planned, as well as for the  
planned application and use of customer’s third party customer(s). Customers  
should provide appropriate design and operating safeguards to minimize the  
risks associated with their applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be valid  
in which the Ampleon product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Ampleon does not accept any liability related to any default, damage, costs or  
problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon does not accept any  
liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Ampleon does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Ampleon takes no responsibility for  
the content in this document if provided by an information source outside of  
Ampleon.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall Ampleon be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost profits,  
lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written  
individual agreement. In case an individual agreement is concluded only the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to applying the customer’s general terms and  
conditions with regard to the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Ampleon.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Ampleon reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
11 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
12.4 Trademarks  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Ampleon’s warranty of the product for such  
automotive applications, use and specifications, and (b) whenever customer  
uses the product for automotive applications beyond Ampleon’s specifications  
such use shall be solely at customer’s own risk, and (c) customer fully  
indemnifies Ampleon for any liability, damages or failed product claims  
resulting from customer design and use of the product for automotive  
applications beyond Ampleon’s standard warranty and Ampleon’s product  
specifications.  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Any reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own  
trademarks.  
13. Contact information  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
BLL9G1214L-600_LS-600  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 2 — 6 November 2018  
12 of 13  
BLL9G1214L(S)-600  
LDMOS L-band radar power transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4  
Ruggedness in class-AB operation. . . . . . . . . . 4  
Impedance information . . . . . . . . . . . . . . . . . . . 4  
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6  
7.1  
7.2  
7.3  
7.4  
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Handling information. . . . . . . . . . . . . . . . . . . . 10  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon Netherlands B.V. 2018.  
All rights reserved.  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
Date of release: 6 November 2018  
Document identifier: BLL9G1214L-600_LS-600  

相关型号:

BLL9G1214LS-600U

BLL9G1214LS-600/SOT502/TRAY
ETC

BLM02AG100SN1

EMI Suppression Filters
MURATA

BLM02AG100SN1B

Ferrite Chip, 1 Function(s), 0.5A, EIA STD PACKAGE SIZE 01005, 2 PIN
MURATA

BLM02AG100SN1D

Ferrite Chip, 1 Function(s), 0.5A, EIA STD PACKAGE SIZE 01005, 2 PIN
MURATA

BLM02AG121SN1

EMI Suppression Filters
MURATA

BLM02AG121SN1B

Ferrite Chip, 1 Function(s), 0.2A, EIA STD PACKAGE SIZE 01005, 2 PIN
MURATA

BLM02AG121SN1D

Ferrite Chip, 1 Function(s), 0.2A, EIA STD PACKAGE SIZE 01005, 2 PIN
MURATA

BLM02AG700SN1

EMI Suppression Filters
MURATA

BLM02AG700SN1B

Ferrite Chip, 1 Function(s), 0.25A, EIA STD PACKAGE SIZE 01005, 2 PIN
MURATA

BLM02AG700SN1D

暂无描述
MURATA

BLM02AX100SN1

Operating Temperature Range
MURATA

BLM02AX100SN1B

Ferrite Chip, 1 Function(s), 0.75A, EIA STD PACKAGE SIZE 01005, 2 PIN
MURATA