BLM8G0710S-60PBY [ETC]

RF FET LDMOS 65V 36.2DB SOT12112;
BLM8G0710S-60PBY
型号: BLM8G0710S-60PBY
厂家: ETC    ETC
描述:

RF FET LDMOS 65V 36.2DB SOT12112

文件: 总21页 (文件大小:1739K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BLM8G0710S-60PB;  
BLM8G0710S-60PBG  
LDMOS 2-stage power MMIC  
Rev. 3 — 13 September 2018  
Product data sheet  
1. Product profile  
1.1 General description  
The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state  
of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general  
purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz.  
Available in gull wing or straight lead outline.  
Table 1.  
Performance  
Typical RF performance at Tcase = 25 °C.  
Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF; per section  
unless otherwise specified in a class-AB production circuit.  
Test signal  
f
VDS  
(V)  
28  
PL(AV)  
(W)  
6
Gp  
ηD  
ACPR5M  
(dBc)  
40  
(MHz)  
957.5  
(dB)  
34.7  
(%)  
26  
single carrier W-CDMA  
1.2 Features and benefits  
Designed for broadband operation (frequency 700 MHz to 1000 MHz)  
High section-to-section isolation enabling multiple combinations  
Integrated temperature compensated bias  
Biasing of individual stages is externally accessible  
Integrated ESD protection  
Excellent thermal stability  
High power gain  
On-chip matching for ease of use  
For RoHS compliance see the product details on the Ampleon website  
1.3 Applications  
RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency  
range. Possible circuit topologies are the following as also depicted in Section 8.1:  
Dual section or single ended  
Doherty  
Quadrature combined  
Push-pull  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
2. Pinning information  
2.1 Pinning  
pin 1 index  
VDS(A1)  
VGS(A2)  
VGS(A1)  
RF_IN_A  
n.c.  
1
2
3
4
5
6
7
RF_OUT_ VDS(A2)  
16  
n.c.  
n.c.  
n.c.  
n.c.  
n.c.  
8
9
10  
11  
12  
13  
14  
RF_IN_B  
VGS(B1)  
RF_OUT_ VDS(B2)  
15  
VGS(B2)  
VDS(B1)  
amp00601  
Transparent top view  
The exposed backside of the package is the ground terminal of the device.  
Fig 1. Pin configuration  
2.2 Pin description  
Table 2.  
Symbol  
VDS(A1)  
VGS(A2)  
VGS(A1)  
RF_IN_A  
n.c.  
Pin description  
Pin  
Description  
1
drain-source voltage of section A, driver stage (A1)  
gate-source voltage of section A, final stage (A2)  
gate-source voltage of section A, driver stage (A1)  
RF input section A  
2
3
4
5
not connected  
n.c.  
6
not connected  
n.c.  
7
not connected  
n.c.  
8
not connected  
n.c.  
9
not connected  
n.c.  
10  
11  
12  
13  
14  
not connected  
RF_IN_B  
VGS(B1)  
VGS(B2)  
VDS(B1)  
RF input section B  
gate-source voltage of section B, driver stage (B1)  
gate-source voltage of section B, final stage (B2)  
drain-source voltage of section B, driver stage (B1)  
BLM8G0710S-60PB_S-60PBG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
2 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
Table 2.  
Pin description …continued  
Symbol  
Pin  
15  
Description  
RF output section B / drain-source voltage of section B, final stage (B2)  
RF output section A / drain-source voltage of section A, final stage (A2)  
RF_OUT_B/VDS(B2)  
RF_OUT_A/VDS(A2)  
GND  
16  
flange RF ground  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLM8G0710S-60PB  
-
plastic, heatsink small outline package;  
SOT1211-3  
16 leads (flat)  
BLM8G0710S-60PBG -  
plastic, heatsink small outline package; 16 leads  
SOT1212-3  
4. Block diagram  
V
DS(A1)  
RF_IN_A  
RF_OUT_A / V  
DS(A2)  
V
V
TEMPERATURE  
COMPENSATED BIAS  
GS(A1)  
GS(A2)  
V
TEMPERATURE  
COMPENSATED BIAS  
GS(B1)  
V
GS(B2)  
RF_IN_B  
RF_OUT_B / V  
DS(B2)  
V
DS(B1)  
aaa-009323  
Fig 2. Block diagram  
5. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
65  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
case temperature  
-
VGS  
0.5 +13  
V
Tstg  
65  
+150 C  
[1]  
Tj  
-
-
225  
150  
C  
C  
Tcase  
[1] Continuous use at maximum temperature will affect the reliability. For details refer to the online MTF  
calculator.  
BLM8G0710S-60PB_S-60PBG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
3 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
6. Thermal characteristics  
Table 5.  
Thermal characteristics  
Measured for total device.  
Symbol Parameter  
Conditions  
Value Unit  
[1]  
Rth(j-c)  
thermal resistance from junction to case  
final stage; Tcase = 90 C; PL = 5 W  
driver stage; Tcase = 90 C; PL = 5 W  
0.9  
3.7  
K/W  
K/W  
[1]  
[1] When operated with a CW signal.  
7. Characteristics  
Table 6.  
DC characteristics  
Tcase = 25 °C; per section unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Final stage  
V(BR)DSS drain-source breakdown voltage  
VGS = 0 V; ID = 482 A  
VDS = 28 V; ID = 240 mA  
VDS = 28 V; ID = 240 mA  
40 C Tcase +85 C  
65  
1.5  
1.7  
-
-
-
V
V
V
%
VGSq  
gate-source quiescent voltage  
2
2.7  
3.6  
-
[1]  
[1]  
2.65  
1
IDq/T  
quiescent drain current variation  
with temperature  
IDSS  
IDSX  
IGSS  
drain leakage current  
drain cut-off current  
gate leakage current  
VGS = 0 V; VDS = 28 V  
VGS = 5.65 V; VDS = 10 V  
VGS = 1.0 V; VDS = 0 V  
-
-
-
-
1.4  
-
A  
A
8.3  
-
140  
nA  
Driver stage  
V(BR)DSS drain-source breakdown voltage  
VGS = 0 V; ID = 120.6 A  
VDS = 28 V; ID = 60 mA  
VDS = 28 V; ID = 60 mA  
40 C Tcase +85 C  
65  
1.5  
1.7  
-
-
-
V
V
V
%
VGSq  
gate-source quiescent voltage  
2
2.7  
3.6  
-
[2]  
[2]  
2.65  
1
IDq/T  
quiescent drain current variation  
with temperature  
IDSS  
IDSX  
IGSS  
drain leakage current  
drain cut-off current  
gate leakage current  
VGS = 0 V; VDS = 28 V  
VGS = 5.65 V; VDS = 10 V  
VGS = 1.0 V; VDS = 0 V  
-
-
-
-
1.4  
-
A  
A
2.1  
-
140  
nA  
[1] In production circuit with 1.3 kgate feed resistor.  
[2] In production circuit with 1.2 kgate feed resistor.  
Table 7.  
RF Characteristics  
Typical RF performance at Tcase = 25 °C; VDS = 28 V; IDq1 = 60 mA (driver stage); IDq2 = 240 mA (final stage); PL(AV) = 6 W;  
unless otherwise specified, measured in an Ampleon wideband straight lead production circuit.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Test signal: single carrier W-CDMA [1]  
Gp  
power gain  
f = 730.5 MHz  
f = 957.5 MHz  
f = 730.5 MHz  
f = 957.5 MHz  
-
35.6  
34.7  
23.4  
26  
-
dB  
dB  
%
33.2  
-
36.2  
D  
drain efficiency  
-
-
21  
%
BLM8G0710S-60PB_S-60PBG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
4 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
Table 7.  
RF Characteristics …continued  
Typical RF performance at Tcase = 25 °C; VDS = 28 V; IDq1 = 60 mA (driver stage); IDq2 = 240 mA (final stage); PL(AV) = 6 W;  
unless otherwise specified, measured in an Ampleon wideband straight lead production circuit.  
Symbol Parameter  
RLin input return loss  
Conditions  
Min  
Typ  
17  
39.5  
40  
8
Max  
10  
-
Unit  
dB  
f = 957.5 MHz  
-
ACPR5M adjacent channel power ratio f = 730.5 MHz  
-
dBc  
(5 MHz)  
f = 957.5 MHz  
-
34.5 dBc  
PARO  
output peak-to-average ratio  
f = 730.5 MHz  
f = 957.5 MHz  
-
-
-
dB  
dB  
6.7  
8
Test signal: CW [2]  
s21  
s212  
phase response difference  
between sections  
10  
-
-
+10  
deg  
insertion power gain difference between sections  
0.5  
+0.5 dB  
[1] 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF.  
[2] f = 957.5 MHz.  
8. Application information  
Table 8.  
Typical performance  
Test signal: 1-tone pulsed CW; RF performance at Tcase = 25 °C; VDS = 28 V; IDq = 600 mA unless otherwise specified,  
measured in an Ampleon wideband f = 700 MHz to 1000 MHz class AB application circuit.  
Symbol Parameter  
PL(1dB) output power at 1 dB gain compression f = 800 MHz  
D  
Conditions  
Min Typ  
Max Unit  
-
-
-
-
-
-
-
74  
-
-
-
-
-
-
-
W
drain efficiency  
power gain  
at PL(1dB); f = 800 MHz  
58.4  
36.5  
154  
0.3  
%
Gp  
PL(AV) = 11.2 W; f = 800 MHz  
2-tone CW; PL(AV) = 40 W; f = 881.5 MHz  
PL(AV) = 11.2 W; f = 700 MHz to 1000 MHz  
f = 800 MHz  
dB  
Bvideo  
Gflat  
video bandwidth  
gain flatness  
MHz  
dB  
G/T  
s122  
gain variation with temperature  
isolation  
0.03  
24.5  
dB/C  
dB  
between sections A and B; PL(AV) = 8 W;  
f = 800 MHz  
K
Rollett stability factor  
T = 40 C; f = 0.1 GHz to 3 GHz  
-
>1.2  
-
BLM8G0710S-60PB_S-60PBG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
5 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
40 mm  
10 μF  
Ferrite  
120 pF  
1.2 kΩ  
1.3 kΩ  
10 μF  
10 μF  
10 μF  
3.9 pF  
4.7 pF  
4.3 pF  
4.3 pF  
100 Ω  
40 mm  
3.9 pF  
10 μF  
10 μF  
1.3 kΩ  
1.2 kΩ  
10 μF  
120 pF  
Ferrite  
10 μF  
amp00006  
Printed-Circuit Board (PCB): Rogers 4350; thickness = 0.508 mm.  
Fig 3. Component layout for class-AB application circuit  
BLM8G0710S-60PB_S-60PBG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
6 of 21  
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VDS  
28 V  
BLM8G0710S-60PB  
Single ended class AB compact board  
schematics 700 MHz - 1000 MHz  
VGS  
10 —F  
50 V  
Ferrite  
120 pF  
0805  
10 —F  
50 V  
VDS  
28 V  
VDS(A1)  
1
2
3
4
BLM8G0710S-60PB PathA  
10 —F  
6.3 V  
VGS(A2)  
VGS(A1)  
RF_IN_A  
n.c.  
1.3 kȍ  
1.2 kȍ  
10 —F  
6.3 V  
Final  
clamped  
RF sense FET  
Driver  
clamped  
RF sense FET  
5
6
7
16  
n.c.  
n.c.  
RF in  
3.9 pF  
0805  
4.3 pF  
0805  
RF out  
100 ȍ  
Driver  
RF power FET  
Final  
RF power FET  
Driver  
RF power FET  
Final  
RF power FET  
4.7 pF  
0805  
4.3 pF  
0805  
3.9 pF  
0805  
n.c.  
n.c.  
8
9
15  
n.c.  
10  
11  
Driver  
clamped  
RF sense FET  
Final  
clamped  
RF sense FET  
RF_IN_B  
VGS(B1)  
VGS(B2)  
VDS(B1)  
10 —F  
6.3 V  
1.2 kȍ  
12  
13  
14  
1.3 kȍ  
10 —F  
6.3 V  
BLM8G0710S-60PB PathB  
10 —F  
50 V  
120 pF  
0805  
10 —F  
50 V  
Ferrite  
amp00007  
Fig 4. Electrical schematic  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
8.1 Possible circuit topologies  
-3 dB / Φ-0°  
In A  
Out A  
Out  
In  
-3 dB / Φ-0°  
In B  
Out B  
amp00514  
Fig 5. Dual section or single ended  
Splitter  
Combiner  
In  
-3 dB / Φ-0°  
λ/4  
λ/4  
-3 dB / Φ-90°  
Out  
amp00603  
Fig 6. Doherty  
3 dB Coupler  
3 dB Coupler  
In  
-3 dB / Φ-0°  
-3 dB / Φ-90°  
Out  
amp00515  
Fig 7. Quadrature combined  
BLM8G0710S-60PB_S-60PBG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
8 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
Splitter  
λ/2  
Combiner  
In  
-3 dB / Φ-0°  
λ/2  
-3 dB / Φ-180°  
Out  
amp00516  
Fig 8. Push-pull  
8.2 Ruggedness in class-AB operation  
The BLM8G0710S-60PB and BLM8G0710S-60PBG are capable of withstanding a load  
mismatch corresponding to VSWR = 30 : 1 through all phases under the following  
conditions: VDS = 32 V; IDq1 = 60 mA; IDq2 = 192 mA; Pi = 13 dBm, Pi is measured at CW  
and corresponding to PL(3dB) under ZS = 50 ; f = 840 MHz.  
8.3 Impedance information  
Table 9.  
Typical impedance tuned for maximum output power  
Measured load-pull data per section; test signal: pulsed CW; Tcase = 25 °C; VDS = 28 V; IDq1 = 60 mA; IDq2 = 240 mA;  
tp = 100 μs; δ = 10 %; ZS = 50 Ω. Typical values unless otherwise specified.  
tuned for maximum output power  
tuned for maximum power added efficiency  
f
ZL  
Gp(max) PL  
ηadd  
AM-PM  
conversion  
ZL  
Gp(max) PL  
ηadd  
AM-PM  
conversion  
(MHz)  
(Ω)  
(dB)  
(dBm) (%)  
(deg)  
(Ω)  
(dB)  
(dBm) (%)  
(deg)  
BLM8G0710S-60PB  
700  
720  
740  
760  
780  
800  
820  
840  
860  
880  
900  
920  
940  
960  
980  
3.0 + j2.1  
3.0 + j1.7  
3.0 + j1.7  
3.0 + j1.3  
3.3 + j1.3  
3.2 + j0.9  
3.3 + j1.0  
3.4 + j0.5  
3.5 + j0.5  
3.4 + j0.4  
3.4 + j0.3  
3.4 + j0.4  
3.5 + j0.0  
3.5 j0.1  
3.5 j0.1  
36.1  
35.9  
35.8  
35.4  
35.3  
35.2  
35.0  
34.8  
34.7  
34.8  
34.7  
34.7  
34.5  
34.2  
34.2  
47.2  
47.3  
47.4  
47.4  
47.5  
47.5  
47.5  
47.5  
47.5  
47.4  
47.4  
47.4  
47.3  
47.3  
47.3  
55.1  
53.4  
54.8  
53.5  
55.0  
53.8  
54.9  
53.2  
53.8  
53.2  
53.4  
54.4  
52.9  
52.7  
53.9  
2.4  
2.5  
3.0  
3.0  
2.4  
3.1  
2.4  
2.3  
2.1  
1.8  
2.1  
1.4  
1.1  
1.3  
0.4  
4.2 + j5.2  
4.4 + j5.0  
4.2 + j4.5  
4.1 + j4.8  
4.0 + j4.4  
3.9 + j4.2  
4.1 + j3.8  
3.8 + j4.0  
3.8 + j3.8  
4.0 + j3.5  
3.7 + j3.6  
3.8 + j3.7  
3.5 + j3.2  
3.5 + j3.1  
3.4 + j2.8  
37.6  
37.8  
37.5  
37.2  
37.0  
37.0  
36.7  
36.8  
36.7  
36.7  
36.8  
36.8  
36.6  
36.4  
36.2  
45.3  
45.4  
45.7  
45.4  
45.7  
45.8  
46.0  
45.7  
45.7  
45.9  
45.7  
45.5  
45.7  
45.7  
45.8  
65.7  
64.6  
64.7  
64.3  
63.7  
64.0  
63.6  
63.4  
63.1  
63.1  
63.0  
63.0  
62.3  
62.0  
62.2  
1.5  
1.0  
0.2  
0.9  
1.3  
1.0  
0.1  
1.3  
1.2  
0.3  
0.9  
0.5  
0.5  
0.3  
1.0  
BLM8G0710S60PBG  
BLM8G0710S-60PB_S-60PBG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
9 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
Table 9.  
Typical impedance tuned for maximum output power …continued  
Measured load-pull data per section; test signal: pulsed CW; Tcase = 25 °C; VDS = 28 V; IDq1 = 60 mA; IDq2 = 240 mA;  
tp = 100 μs; δ = 10 %; ZS = 50 Ω. Typical values unless otherwise specified.  
tuned for maximum output power  
tuned for maximum power added efficiency  
f
ZL  
Gp(max) PL  
ηadd  
AM-PM  
conversion  
ZL  
Gp(max) PL  
ηadd  
AM-PM  
conversion  
(MHz)  
700  
720  
740  
760  
780  
800  
820  
840  
860  
880  
900  
920  
940  
960  
(Ω)  
(dB)  
36.3  
36.4  
35.9  
35.6  
35.5  
35.4  
35.8  
35.5  
34.5  
34.7  
34.8  
35  
(dBm) (%)  
(deg)  
0.3  
(Ω)  
(dB)  
37.7  
37.7  
37.3  
37.0  
37.0  
37.0  
37.3  
36.6  
35.9  
36.4  
36.5  
36.6  
36.4  
36.1  
(dBm) (%)  
(deg)  
3.2  
2.2  
2.0  
2.2  
2.9  
3.2  
1.8  
1.3  
2.5  
3.2  
2.7  
1.9  
1.2  
2.2  
3.0 + j0.6  
3.0 + j0.6  
2.9 + j0.3  
3.0 + j0.2  
3.3 j0.1  
3.3 j0.5  
3.3 j0.5  
3.3 j0.5  
3.5 j0.9  
3.4 j1.0  
3.4 j1.2  
3.4 j1.1  
3.5 j1.4  
3.5 j1.6  
47.5  
47.5  
47.6  
47.7  
47.7  
47.7  
47.7  
47.6  
47.7  
47.6  
47.6  
47.6  
47.5  
47.5  
55.1  
55.6  
54.6  
56.0  
55.9  
54.4  
55.2  
55.4  
54.9  
54.2  
54.2  
55.4  
54.7  
54.9  
4.5 + j3.6  
4.4 + j3.1  
4.1 + j3.4  
4.4 + j2.8  
4.3 + j2.9  
3.9 + j2.6  
4.1 + j2.3  
4.1 + j2.1  
3.8 + j2.0  
3.6 + j2.0  
3.7 + j1.8  
3.7 + j1.8  
3.8 + j1.6  
3.5 + j1.3  
45.8  
46.1  
45.8  
46.1  
46.0  
46.1  
46.2  
46.3  
46.3  
46.1  
46.1  
45.9  
46.0  
46.0  
66.1  
65.7  
65.4  
65.1  
64.7  
64.4  
64.0  
63.7  
63.7  
63.1  
63.3  
63.2  
62.8  
62.8  
0.6  
1.9  
0.6  
0.9  
0.8  
1.3  
1.3  
0.6  
0.1  
0.0  
0.4  
0.3  
0.4  
34.7  
34.4  
8.4 Graphs  
amp00008  
amp00009  
40  
30  
20  
10  
0
0
38  
0
G
RL  
G
RL  
in  
(dB)  
p
in  
p
(1)  
(dB)  
(dB)  
(dB)  
-10  
-20  
-30  
-40  
36  
34  
32  
30  
-6  
(2)  
(1)  
(2)  
-12  
-18  
-24  
200  
400  
600  
800  
1000  
1200  
700  
750  
800  
850  
900  
950  
f (MHz)  
1000  
f (MHz)  
Tcase = 25 C; VDS = 28 V; IDq1 = 60 mA; IDq2 = 240 mA;  
Tcase = 25 C; VDS = 28 V; IDq1 = 60 mA; IDq2 = 240 mA;  
PL = 2 W. Per section.  
PL = 2 W. Per section.  
(1) magnitude of Gp  
(2) magnitude of RLin  
(1) magnitude of Gp  
(2) magnitude of RLin  
Fig 9. Wideband power gain and input return loss as  
function of frequency; typical values  
Fig 10. In-band power gain and input return loss as  
function of frequency; typical values  
BLM8G0710S-60PB_S-60PBG  
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Product data sheet  
Rev. 3 — 13 September 2018  
10 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
amp00010  
amp00011  
40  
38  
36  
34  
32  
80  
60  
40  
20  
0
8
(1)  
G
η
φ
/φ  
(deg)  
p
D
s21 s21(norm)  
(2)  
(3)  
(4)  
(dB)  
(%)  
4
0
G
p
((11))  
((22))  
((33))  
((44))  
-4  
η
D
-8  
25  
30  
35  
40  
45  
(dBm)  
50  
25  
30  
35  
40  
45  
50  
P
L
P
(dBm)  
L
Tcase = 25 C; VDS = 28 V; IDq1 = 60 mA; IDq2 = 240 mA.  
Normalized at PL = 22 dBm; Tcase = 25 C; VDS = 28 V;  
Per section.  
IDq1 = 60 mA; IDq2 = 240 mA. Per section.  
(1) f = 700 MHz  
(2) f = 800 MHz  
(3) f = 900 MHz  
(4) f = 1000 MHz  
(1) f = 700 MHz  
(2) f = 800 MHz  
(3) f = 900 MHz  
(4) f = 1000 MHz  
Fig 11. Power gain and drain efficiency as function of  
output power; typical values  
Fig 12. Normalized phase response as a function of  
output power; typical values  
amp00012  
-10  
IMD  
(dBcc))  
(1)  
(2)  
IMD3  
IMD5  
-30  
(1)  
(2)  
IMD7  
(1)  
(2)  
-50  
-70  
-90  
2
3
1
10  
10  
10  
tone spacing (MHz)  
Tcase = 25 C; VDS = 28 V; IDq1 = 60 mA; IDq2 = 240 mA; f = 881.5 MHz; 2-tone CW, PL = 20 W. Per section.  
(1) IMD low  
(2) IMD high  
Fig 13. Intermodulation distortion as a function of tone spacing; typical values  
BLM8G0710S-60PB_S-60PBG  
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Product data sheet  
Rev. 3 — 13 September 2018  
11 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
amp00013  
amp00014  
-20  
ACPR  
(dBc)  
50  
40  
30  
20  
10  
0
60  
2
η
|s |  
12  
D
(%)  
(dB)  
-30  
48  
36  
24  
12  
0
-40  
-50  
-60  
-70  
ACPRR  
5M  
η
D
ACPPRR  
10M  
30  
32.5  
35  
37.5  
40  
42.5  
(dBm)  
45  
500  
600  
700  
800  
900 1000 1100 1200  
f (MHz)  
P
L
Tcase = 25 C; VDS = 28 V; IDq1 = 60 mA; IDq2 = 240 mA:  
f = 900 MHz; 1-carrier W-CDMA; test model 1;  
Tcase = 25 C; VDS = 28 V; IDq1 = 40 mA; IDq2 = 260 mA,  
measured on evaluation board.  
PAR = 9.9 dB at 0.01% probability on CCDF. Per section  
Fig 14. Adjacent channel power ratio and drain  
efficiency as function of output power;  
typical values  
Fig 15. Section A to B isolation as a function of  
frequency; typical values  
BLM8G0710S-60PB_S-60PBG  
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Product data sheet  
Rev. 3 — 13 September 2018  
12 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
9. Package outline  
SOT1211-3  
(18.01)  
(2.15)  
(15.44)  
7.45  
(0.75)  
E
0.10 (4)  
A
15  
16  
0.05 A  
L
R1.38  
16.00  
P
2.00 0.1  
Z
R0.16 max.  
0.10  
1
14  
metal protrusion 4x  
(ground) in corners (2)  
1.57 (5)  
0.22 0.05  
1.50  
B
1.00 (12x)  
0.25 B  
0.35 (14x) (3)  
L
+
-
0.08  
0.03  
20.75(1)  
0.05 B  
L
3.92  
R1.00  
R0.32  
B
20.57  
(0.20) molding compound around  
the perimeter of the heatsink  
R0.60(4x)  
pin 17 (6)  
0.25 B  
5.50 (3)  
L
Min. 15.5  
Min. 18.5  
1
Tolerances unless otherwise stated:  
Angle:  
Revision:  
Revision date:  
Package outline drawing:  
SOT1211-3  
7/26/2018  
B
1°  
Dimension:  
B
0.05  
units in mm.  
Third angle projection  
Sheet 1 of 2  
Fig 16. Package outline SOT1211-3 (sheet 1 of 2)  
BLM8G0710S-60PB_S-60PBG  
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Product data sheet  
Rev. 3 — 13 September 2018  
13 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
SOT1211-3  
Drawing Notes  
Description  
Items  
(1)  
Dimensions are excluding mold protrusion. Areas located adjacent to the leads have a maximum mold protrusion of 0.25  
mm (per side) and 0.62 mm max. in length. In between the 14 leads the protrusion is 0.25 mm. max. At all other areas the  
mold protrusion is maximum 0.15 mm per side. See also detail B.  
(2)  
(3)  
(4)  
(5)  
(6)  
(7)  
The metal protrusion (tie bars) in the corner will not stick out of the molding compound protrusions (detail A).  
The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.  
The lead coplanarity over all leads is 0.1 mm maximum.  
Dimension is measured 0.5 mm from the edge of the top package body.  
The hatched area indicates the exposed metal heatsink.  
The leads and exposed heatsink are plated with matte Tin (Sn).  
location of metal protrusion (2)  
DETAIL  
A
SCALE 25:1  
B
A
lead dambar  
location  
DETAIL  
B
SCALE 50:1  
1
Tolerances unless otherwise stated:  
Angle:  
Revision:  
Revision date:  
Package outline drawing:  
SOT1211-3  
7/26/2018  
B
1°  
Dimension:  
B
0.05  
units in mm.  
Third angle projection  
Sheet 2 of 2  
Fig 17. Package outline SOT1211-3 (sheet 2 of 2)  
BLM8G0710S-60PB_S-60PBG  
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© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
14 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
SOT1212-3  
(18.01)  
(15.44)  
7.45  
(2.15)  
(0.75)  
A
0.05 A  
L
16  
15  
R1.38  
16  
P2 0.1Z  
R0.16 max.  
14  
1
metal protrusion 4x  
C
1.5  
(ground) in corners (2)  
1
(12x)  
0.25 B  
L
0.35 (14x) (3)  
20.75 (1)  
0.05 B  
L
DETAIL  
C
+
-
.08  
.03  
3.92  
SCALE 25:1  
R1  
H
R0.32  
20.57  
B
0.10  
(0.20) compound rim all around the  
perimeter of the heatsink  
+
-
4°  
3°  
3.0°  
+0.06  
0.00  
(6)  
-
0.02  
Gage plane  
pin 17 (4)  
0.35 (7)  
Seating plane  
R0.60 (4x)  
0.25 B  
5.5 (3)  
L
Min. 15.5  
Min. 18.5  
1
Tolerances unless otherwise stated:  
Angle:  
Revision:  
Revision date:  
Package outline drawing:  
SOT1212-3  
7/26/2018  
B
1°  
Dimension:  
B
0.05  
units in mm.  
Third angle projection  
Sheet 1 of 2  
Fig 18. Package outline SOT1212-3 (sheet 1 of 2)  
BLM8G0710S-60PB_S-60PBG  
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© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
15 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
SOT1212-3  
Drawing Notes  
Description  
Items  
(1)  
Dimensions are excluding mold protrusion. Areas located adjacent to the leads have a maximum mold protrusion of 0.25  
mm (per side) and 0.62 mm max. in length. In between the 14 leads the protrusion is 0.25 mm max. At all other areas the  
mold protrusion is maximum 0.15 mm per side. See also detail B.  
(2)  
(3)  
(4)  
(5)  
The metal protrusion (tie bars) in the corner will not stick out of the molding compound protrusions (detail A).  
The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.  
The hatched area indicated the exposed heatsink.  
The leads and exposed heatsink are plated with matte Tin (Sn).  
Dimension is measured with respect to the bottom of the heatsink Datum H. Positive value means that the bottom of the  
heatsink is higher than the bottom of the lead.  
(6)  
(7)  
Gage plane (foot length) to be measured from the seating plane.  
location of metal protrusion (2)  
B
DETAIL  
A
SCALE 25:1  
A
lead dambar  
location  
DETAIL  
B
SCALE 50:1  
1
Tolerances unless otherwise stated:  
Angle:  
Revision:  
Revision date:  
Package outline drawing:  
SOT1212-3  
7/26/2018  
B
1°  
Dimension:  
B
0.05  
units in mm.  
Third angle projection  
Sheet 2 of 2  
Fig 19. Package outline SOT1212-3 (sheet 2 of 2)  
BLM8G0710S-60PB_S-60PBG  
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Product data sheet  
Rev. 3 — 13 September 2018  
16 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
10. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
Table 10. ESD sensitivity  
ESD model  
Class  
C1 [1]  
1B [2]  
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002  
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001  
[1] CDM classification C1 is granted to any part that passes after exposure to an ESD pulse of 250 V.  
[2] HBM classification 1B is granted to any part that passes after exposure to an ESD pulse of 500 V.  
11. Abbreviations  
Table 11. Abbreviations  
Acronym  
AM  
Description  
Amplitude Modulation  
3GPP  
CCDF  
CW  
3rd Generation Partnership Project  
Complementary Cumulative Distribution Function  
Continuous Wave  
DPCH  
ESD  
Dedicated Physical CHannel  
ElectroStatic Discharge  
GEN8  
LDMOS  
MMIC  
MTF  
Eighth Generation  
Laterally Diffused Metal Oxide Semiconductor  
Monolithic Microwave Integrated Circuit  
Median Time to Failure  
PAR  
Peak-to-Average Ratio  
PM  
Phase Modulation  
RoHS  
VSWR  
W-CDMA  
Restriction of Hazardous Substances  
Voltage Standing Wave Ratio  
Wideband Code Division Multiple Access  
BLM8G0710S-60PB_S-60PBG  
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Product data sheet  
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17 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
12. Revision history  
Table 12. Revision history  
Document ID  
Release date Data sheet status  
Product data sheet  
Change notice  
Supersedes  
BLM8G0710S-60PB_S-60PBG v.3 20180913  
-
BLM8G0710S-60PB_  
S-60PBG v.2  
Modifications  
Figure 1 on page 2: figure updated  
Table 3 on page 3: package outline versions changed to SOT1211-3 and  
SOT1212-3  
Figure 3 on page 6: figure updated  
Figure 5 on page 8: figure updated  
Figure 6 on page 8: figure updated  
Figure 7 on page 8: figure updated  
Figure 8 on page 9: figure updated  
Table 9 on page 9: typo corrected  
Section 9 on page 13: package outline versions changed from SOT1211-2 and  
SOT1212-2 to SOT1211-3 and SOT1212-3  
Table 10 on page 17: added table  
BLM8G0710S-60PB_S-60PBG v.2 20160322  
Product data sheet  
-
-
BLM8G0710S-60PB_  
S-60PBG v.1  
BLM8G0710S-60PB_S-60PBG v.1 20160225  
Product data sheet  
-
BLM8G0710S-60PB_S-60PBG  
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Product data sheet  
Rev. 3 — 13 September 2018  
18 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.ampleon.com.  
Ampleon product can reasonably be expected to result in personal injury,  
13.2 Definitions  
death or severe property or environmental damage. Ampleon and its  
suppliers accept no liability for inclusion and/or use of Ampleon products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Ampleon product is suitable and  
fit for the customer’s applications and products planned, as well as for the  
planned application and use of customer’s third party customer(s). Customers  
should provide appropriate design and operating safeguards to minimize the  
risks associated with their applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be valid  
in which the Ampleon product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Ampleon does not accept any liability related to any default, damage, costs or  
problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon does not accept any  
liability in this respect.  
13.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Ampleon does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Ampleon takes no responsibility for  
the content in this document if provided by an information source outside of  
Ampleon.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall Ampleon be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost profits,  
lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written  
individual agreement. In case an individual agreement is concluded only the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to applying the customer’s general terms and  
conditions with regard to the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Ampleon.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Ampleon reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
BLM8G0710S-60PB_S-60PBG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 3 — 13 September 2018  
19 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
13.4 Trademarks  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Ampleon’s warranty of the product for such  
automotive applications, use and specifications, and (b) whenever customer  
uses the product for automotive applications beyond Ampleon’s specifications  
such use shall be solely at customer’s own risk, and (c) customer fully  
indemnifies Ampleon for any liability, damages or failed product claims  
resulting from customer design and use of the product for automotive  
applications beyond Ampleon’s standard warranty and Ampleon’s product  
specifications.  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Any reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own  
trademarks.  
14. Contact information  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
BLM8G0710S-60PB_S-60PBG  
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Product data sheet  
Rev. 3 — 13 September 2018  
20 of 21  
BLM8G0710S-60PB(G)  
LDMOS 2-stage power MMIC  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
2.1  
2.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2  
3
4
5
6
7
Ordering information. . . . . . . . . . . . . . . . . . . . . 3  
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
8
Application information. . . . . . . . . . . . . . . . . . . 5  
Possible circuit topologies . . . . . . . . . . . . . . . . 8  
Ruggedness in class-AB operation. . . . . . . . . . 9  
Impedance information . . . . . . . . . . . . . . . . . . . 9  
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
8.1  
8.2  
8.3  
8.4  
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13  
Handling information. . . . . . . . . . . . . . . . . . . . 17  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18  
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 19  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 20  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon Netherlands B.V. 2018.  
All rights reserved.  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
Date of release: 13 September 2018  
Document identifier: BLM8G0710S-60PB_S-60PBG  

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