BLS7G3135L-350P,11_技术文档

BLS7G3135L-350P;

BLS7G3135LS-350P

LDMOS S-band radar power transistor

Rev. 4 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz

range.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C; t_p= 300 s;  = 10 %; I_Dq= 200 mA; in a class-AB

production test circuit.

Test signal

f

V_DS

(V)

32

P_L

G_p

(dB)

12

_D

(%)

43

39

t_r

t_f

(GHz)

3.1

3.3

3.5

(W)

350

(ns)

5

(ns)

5

pulsed RF

32

12

5

32

10

5

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (3.1 GHz to 3.5 GHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency

range

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

2. Pinning information

Table 2.

Pinning

Description

Simplified outline

Graphic symbol

BLS7G3135L-350P (SOT539A)

1

2

3

4

5

drain1

drain2

gate1

gate2

source

1

3

2

4

1

5

3

5

4

[1]

2

sym117

BLS7G3135LS-350P (SOT539B)

1

2

3

4

5

drain1

drain2

gate1

gate2

source

1

3

2

4

1

5

3

5

4

[1]

2

sym117

[1] Connected to flange.

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name Description

Version

BLS73135L-350P

BLS73135LS-350P

-

flanged balanced ceramic package; 2 mounting holes; SOT539A

4 leads

-

earless flanged balanced ceramic package; 4 leads

SOT539B

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Min

-

Max

65

Unit

V

drain-source voltage

gate-source voltage

storage temperature

junction temperature

V_GS

T_stg

0.5

65

-

+11

+150

225

V

C

[1]

T_j

[1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF

calculator.

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Product data sheet

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

5. Thermal characteristics

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

Z_th(j-mb)transient thermal impedance from junction to T_case= 85 C; P_L= 350 W

mounting base

t_p= 300 s;  = 10 %

0.1

K/W

t_p= 100 s;  = 20 %

t_p= 100 s;  = 10 %

t_p= 200 s;  = 10 %

0.09 K/W

0.07 K/W

0.09 K/W

6. Characteristics

Table 6.

DC characteristics

T_j= 25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V_(BR)DSSdrain-source breakdown

voltage

V_GS= 0 V; I_D= 2.2 mA

65

-

V

V_GS(th)

I_DSS

gate-source threshold voltage V_DS= 10 V; I_D= 220 mA 1.5

1.9

-

2.3

2.8

-

V

drain leakage current

drain cut-off current

V_GS= 0 V; V_DS= 28 V

-

A

A

I_DSX

V_GS= V_GS(th)+ 3.75 V;

V_DS= 10 V

39

I_GSS

g_fs

gate leakage current

V_GS= 11 V; V_DS= 0 V

V_DS= 10 V; I_D= 11 A

-

280

nA

S

forward transconductance

16.2

0.065

-

R_DS(on)drain-source on-state

resistance

V_GS= V_GS(th)+ 3.75 V;

I_D= 7.7 A



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Product data sheet

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

Table 7.

Test signal: pulsed RF; t_p= 300 s;  = 10 %; RF performance at V_DS= 32 V; I_Dq= 200 mA;

_case= 25 C; unless otherwise specified, in a class-AB production circuit.

RF characteristics

T

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

At frequency of 3.1 GHz

G_p

power gain

P_L= 350 W

10.5

12

6

43

0.2

5

-

dB

%

RL_in

_D

input return loss

drain efficiency

-

38

-

P_droop(pulse)pulse droop power

0.3

50

dB

ns

t_r

t_f

rise time

fall time

-

5

At frequency of 3.3 GHz

G_p

power gain

P_L= 350 W

10.5

12

6

43

0.2

5

-

dB

%

RL_in

_D

input return loss

drain efficiency

-

38

-

P_droop(pulse)pulse droop power

0.3

50

dB

ns

t_r

t_f

rise time

fall time

-

5

At frequency of 3.5 GHz

G_p

power gain

P_L= 320 W

8.5

10

9

39

0.2

5

-

dB

%

RL_in

_D

input return loss

drain efficiency

-

35

-

P_droop(pulse)pulse droop power

0.3

50

dB

ns

t_r

t_f

rise time

fall time

-

5

7. Application information

7.1 Ruggedness in class-AB operation

The BLS7G3135L-350P and the BLS7G3135LS-350P are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: V_DS= 32 V; I_Dq= 200 mA; P_L= 350 W; t_p= 300 s;  = 10 %

BLS7G3135L-350P_7G3135LS-350P#4

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Product data sheet

Rev. 4 — 1 September 2015

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

7.2 Impedance information

Table 8.

Typical impedance

Measured load-pull data. Typical values unless otherwise specified.

[1]

f

Z_S

Z_L

(GHz)

3.1

3.2

3.3

3.4

3.5

()

1.8  7.2j

1.6  7.1j

2.2  8.2j

3.1  9.7j

3.6  11.6j

3.6  6.3j

4.4  6.7j

4.8  5.8j

5.7  6.2j

6.5  4.6j

[1] Impedances are taken at a single half of the push-pull transistor.

drain 1

gate 1

Z

L

S

gate 2

drain 2

001aak544

Fig 1. Definition of transistor impedance

7.3 Test circuit information

40 mm

R1

C3

C6

C4

C13

C8 C10

C11

C1

58 mm

C9 C12

C2

R2

C7

C5

C14

aaa-007977

Printed-Circuit Board (PCB): Rogers 3006; _r= 6.15; thickness = 0.64 mm;

thickness copper plating = 35 m

See Table 9 for a list of components.

Fig 2. Test circuit layout

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Product data sheet

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

Table 9.

List of components

For test circuit see Figure 2.

Component

C1, C2, C3

C4, C5, C11

C6, C7

Description

Value

Remarks

ATC100A

ATC800B

ATC800A

TDK

multilayer ceramic chip capacitor

electrolytic capacitor

8.2 pF

15 pF

100 pF

C8, C9

1 F, 50 V

10 F, 50 V

220 F, 63 V

10 

C10, C12

C13, C14

R1, R2

TDK

SMD resistor

7.4 Graphical data

aaa-007978

aaa-007979

13

12

11

10

9

50

40

30

20

10

0

13

12

11

10

9

50

40

30

20

10

0

G

ηη

G

ηη

D

(%)

p

D

p

G

p

(dB)

(%)

(dB)

((11))

((22))

((33))

((11))))

((22))))

((33))))

η

D

8

48

50

52

54

56

58

0

100

200

300

400

P (W)

L

500

P

(dBm)

L

V_DS= 32 V; I_Dq= 200 mA.

(1) f = 3100 MHz

(2) f = 3300 MHz

(3) f = 3500 MHz

(1) f = 3100 MHz

(2) f = 3300 MHz

(3) f = 3500 MHz

Fig 3. Power gain and drain efficiency as function of

output power; typical values

Fig 4. Power gain and drain efficiency as function of

output power; typical values

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

aaa-009191

aaa-009192

500

43

42

41

40

39

P

η

D

(%)

L

(W)

400

300

200

100

0

(1)

(2)

(3)

0

5

10

15

20

25

30

35

40

2900 3000 3100 3200 3300 3400 3500 3600 3700

f (MHz)

P (W)

i

V_DS= 32 V; I_Dq= 200 mA; t_p=300 s;  = 10 %.

V_DS= 32 V; I_Dq= 200 mA; t_p= 300 s;  = 10 %;

P_L= 350 W.

(1) f = 3100 MHz

(2) f = 3300 MHz

(3) f = 3500 MHz

Fig 5. Output power as a function of input power;

typical values

Fig 6. Drain efficiency as a function of frequency;

typical values

aaa-009193

aaa-009194

14

10

G

RL

in

(dB)

p

(dB)

13

12

11

10

9

8

6

4

2

0

2900 3000 3100 3200 3300 3400 3500 3600 3700

f (MHz)

V_DS= 32 V; I_Dq= 200 mA; t_p= 300 s;  = 10 %;

P_L= 350 W.

Fig 7. Power gain as a function of frequency; typical

values

Fig 8. Input return loss as a function of frequency;

typical values

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Product data sheet

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

8. Package outline

Flanged balanced ceramic package; 2 mounting holes; 4 leads

SOT539A

D

A

F

D

U

1

B

1

q

C

w

H

M

C

2

1

c

1

3

2

4

E

p

E

H

U

1

2

5

w

M

B

A

1

L

A

w

b

M

3

Q

e

0

5

10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

c

A

b

D

e

E

F

H

L

p

Q

q

U

w

3

UNIT

1

2

1

2

11.81

11.56

4.7

4.2

31.55 31.52

30.94 30.96

9.50 9.53

17.12

3.48 3.30 2.26

25.53

0.18

0.10

1.75

41.28 10.29

41.02 10.03

35.56

1.400

0.25 0.51 0.25

0.010 0.020 0.010

13.72

mm

3.05 2.01

9.30 9.27 1.50 16.10 25.27 2.97

0.465

0.455

0.185

0.165

1.242 1.241

1.218 1.219

0.374 0.375 0.069 0.674

0.366 0.365 0.059 0.634 0.995 0.117

0.137 0.130 0.089

0.405

0.007

0.004

1.005

1.625

inches

Note

0.540

0.120 0.079

1.615 0.395

1. millimeter dimensions are derived from the original inch dimensions.

2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

10-02-02

12-05-02

SOT539A

Fig 9. Package outline SOT539A

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

Earless flanged balanced ceramic package; 4 leads

SOT539B

D

A

F

5

D

1

D

U

H

1

c

w

2

D

1

2

E

U

2

E

H

1

L

3

4

b

w

3

Q

e

0

5

10 mm

scale

Dimensions

(1)

Unit

A

b

c

D

1

E

e

F

H

L

Q

U

1

U

2

w

2

w

3

1

max 4.7 11.81 0.18 31.55 31.52 9.5

nom

9.53

1.75 17.12 25.53 3.48 2.26 32.39 10.29

mm

13.72

0.54

0.25 0.25

0.01 0.01

min 4.2 11.56 0.10 30.94 30.96 9.3

9.27

1.50 16.10 25.27 2.97 2.01 32.13 10.03

0.069 0.674 1.005 0.137 0.089 1.275 0.405

max 0.185 0.465 0.007 1.242 1.241 0.374 0.375

nom

min 0.165 0.455 0.004 1.218 1.219 0.366 0.365

inches

Note

0.059 0.634 0.995 0.117 0.079 1.265 0.395

1. millimeter dimensions are derived from the original inch dimensions.

sot539b_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

12-05-02

13-05-24

SOT539B

Fig 10. Package outline SOT539B

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Product data sheet

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

9. Handling information

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

10. Abbreviations

Table 10. Abbreviations

Acronym

ESD

Description

ElectroStatic Discharge

Laterally Diffused Metal Oxide Semiconductor

Short wave band

LDMOS

S-Band

SMD

Surface Mounted Device

Voltage Standing-Wave Ratio

VSWR

11. Revision history

Table 11. Revision history

Document ID

Release date Data sheet status

Change notice Supersedes

BLS73135L-350P_7G3135LS-350P#4 20150901

Product data sheet

BLS73135L-350P_7G31

35LS-350P v.3

Modifications:

• The format of this document has been redesigned to comply with the new

identity guidelines of Ampleon.

• Legal texts have been adapted to the new company name where appropriate.

BLS73135L-350P_7G3135LS-350P v.3 20131029

BLS73135L-350P_7G3135LS-350P v.2 20130801

BLS73135L-350P_7G3135LS-350P v.1 20121012

Product data sheet

-

BLS73135L-350P_

7G3135LS-350P v.2

Objective data sheet -

BLS73135L-350P_

7G3135LS-350P v.1

-

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

12. Legal information

12.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

Ampleon product can reasonably be expected to result in personal injury,

12.2 Definitions

death or severe property or environmental damage. Ampleon and its

suppliers accept no liability for inclusion and/or use of Ampleon products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Ampleon product is suitable and

fit for the customer’s applications and products planned, as well as for the

planned application and use of customer’s third party customer(s). Customers

should provide appropriate design and operating safeguards to minimize the

risks associated with their applications and products.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

Ampleon does not accept any liability related to any default, damage, costs or

problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Ampleon products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Ampleon does not accept any

liability in this respect.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Ampleon does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Ampleon takes no responsibility for

the content in this document if provided by an information source outside of

Ampleon.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

In no event shall Ampleon be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost profits,

lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Terms and conditions of commercial sale — Ampleon products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.ampleon.com/terms, unless otherwise agreed in a valid written

individual agreement. In case an individual agreement is concluded only the

terms and conditions of the respective agreement shall apply. Ampleon

hereby expressly objects to applying the customer’s general terms and

conditions with regard to the purchase of Ampleon products by customer.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Ampleon’ aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Ampleon.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Right to make changes — Ampleon reserves the right to make changes to

information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Suitability for use — Ampleon products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction of an

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BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Any reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own Any

reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own

trademarks.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Ampleon’ warranty of the product for such

automotive applications, use and specifications, and (b) whenever customer

uses the product for automotive applications beyond Ampleon’ specifications

such use shall be solely at customer’s own risk, and (c) customer fully

indemnifies Ampleon for any liability, damages or failed product claims

resulting from customer design and use of the product for automotive

applications beyond Ampleon’ standard warranty and Ampleon’ product

specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

13. Contact information

For more information, please visit:

http://www.ampleon.com

For sales office addresses, please visit:

http://www.ampleon.com/sales

BLS7G3135L-350P_7G3135LS-350P#4

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 4 — 1 September 2015

12 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

14. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

General description . . . . . . . . . . . . . . . . . . . . . 1

Features and benefits. . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2

3

4

5

6

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7

Application information. . . . . . . . . . . . . . . . . . . 4

Ruggedness in class-AB operation . . . . . . . . . 4

Impedance information . . . . . . . . . . . . . . . . . . . 5

Test circuit information . . . . . . . . . . . . . . . . . . . 5

Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.1

7.2

7.3

7.4

8

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

Handling information. . . . . . . . . . . . . . . . . . . . 10

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9

10

11

12

Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.1

12.2

12.3

12.4

13

14

Contact information. . . . . . . . . . . . . . . . . . . . . 12

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 1 September 2015

Document identifier: BLS7G3135L-350P_7G3135LS-350P#4


型号：	BLS7G3135L-350P,11
厂家：	ETC
描述：	RF FET LDMOS 65V 10DB SOT539A
文件：	总13页 (文件大小：1028K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BLS7G3135L-350P,11 [ETC]

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