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BSM181F(C) [ETC]

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 34A I(D) ; 晶体管| MOSFET功率模块|独立| 800V V（ BR ） DSS | 34A I（ D）\n
BSM181F(C)
元器件型号： BSM181F(C)
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 34A I(D)
晶体管| MOSFET功率模块|独立| 800V V（ BR ） DSS | 34A I（ D）\n

晶体 晶体管 开关 脉冲 局域网
PDF文件： 总7页 (文件大小：390K)
下载文档：  下载PDF数据表文档文件
型号参数：BSM181F(C)参数
 查看货源

BSM181FR

 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 34A I(D)

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32 ETC

BSM181FR

 Power Field-Effect Transistor, 34A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SIMOPAC-4

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0 INFINEON

BSM181R

 SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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39 INFINEON

BSM191

 SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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33 INFINEON

BSM191(C)

 Power Field-Effect Transistor, 28A I(D), 1000V, 0.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SIMOPAC-4

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0 INFINEON

BSM191/F

 Power Field-Effect Transistor, 28A I(D), 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4

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0 INFINEON

BSM191F

 SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)

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20 INFINEON

BSM191F(C)

 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 28A I(D)

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22 ETC

BSM200GA100D

 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 200A I(C)

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50 ETC

BSM200GA100D

 Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-4

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0 INFINEON

BSM200GA120D

 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C)

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120 ETC

BSM200GA120DLC

 Technische Information / Technical Information

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80 EUPEC

BSM200GA120DLCS

 Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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1 INFINEON

BSM200GA120DN2

 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C)

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382 ETC

BSM200GA120DN2

 IGBT Power Module

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106 EUPEC
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