关闭背景特效

BSM300GA170DN2 [ETC]

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.7KV V(BR)CES | 440A I(C) ; 晶体管| IGBT功率模块|独立| 1.7KV V（ BR ） CES | 440A I（C ）\n

BSM300GA170DN2


元器件型号：	BSM300GA170DN2
生产厂家：	ETC
描述和应用：	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1.7KV V(BR)CES \| 440A I(C) 晶体管\| IGBT功率模块\|独立\| 1.7KV V（ BR ） CES \| 440A I（C ）\n 晶体晶体管双极性晶体管局域网
PDF文件：	总1页 (文件大小：105K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM300GA170DN2参数

BSM300GA170DN2E3166

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

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47 INFINEON

BSM300GAL120DLC

IGBT-Module

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59 EUPEC

BSM300GAR120DLC

IGBT Module

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75 ETC

BSM300GB120DLC

62mm C-series module with low loss IGBT2 and EmCon diode

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110 INFINEON

BSM300GB60DLC

IGBT Module

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349 ETC

BSM300GB60DLC

IGBT-Modules

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60 EUPEC

BSM300GB60DLCE3256HDLA1

Insulated Gate Bipolar Transistor,

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1 INFINEON

BSM30GD60DLC

IGBT Module

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82 ETC

BSM30GD60DLCE3224

IGBT Module

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34 ETC

BSM30GD60DN2

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)

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41 ETC

BSM30GD60DN2E3224

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)

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23 ETC

BSM30GP60

Elektrische Eigenschaften / Electrical properties

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327 EUPEC

BSM30GP602

IGBT Module

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42 ETC

BSM35GB120DLC

vorlafige Daten preliminary data

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30 EUPEC

BSM35GB120DN2

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)

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95 INFINEON

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