BTS721-L1_技术文档

PROFET^®BTS 721 L1

Smart Four Channel Highside Power Switch

Product Summary

Overvoltage Protection

Features

V_bb(AZ)

43

5.0 ... 34

two parallel four parallel

V

•

Overload protection

Current limitation

Short-circuit protection

Thermal shutdown

Overvoltage protection

(including load dump)

V

Operating voltage

active channels:

bb(on)

one

100

2.9

8

On-state resistance R_ON

Nominal load current I

50

4.3

8

25

6.3

8

mΩ

A

L(NOM)

Current limitation

I

•

L(SCr)

Fast demagnetization of inductive loads

Reverse battery protection

Undervoltage and overvoltage shutdown

with auto-restart and hysteresis

Open drain diagnostic output

Open load detection in ON-state

CMOS compatible input

1

)

P-DSO-20

•

Loss of ground and loss of V protection

Electrostatic discharge (ESD) protection

bb

Application

1

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

All types of resistive, inductive and capacitive loads

Replaces electromechanical relays and discrete circuits

•

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection

functions.

Pin Definitions and Functions

1,10,

11,12,

15,16,

19,20

3

5

7

9

18

Symbol Function

Positive power supply voltage. Design the

Pin configuration (top view)

V

bb

wiring for the simultaneous max. short circuit

currents from channel 1 to 4 and also for low

thermal resistance

V

1

2

3

4

5

•

20 V

19 V

18 OUT1

17 OUT2

bb

GND1/2

IN1

ST1/2

IN2

bb

IN1

IN2

Input 1 .. 4, activates channel 1 .. 4 in case of

logic high signal

IN3

IN4

16 V

bb

GND3/4

IN3

ST3/4

IN4

6

7

8

9

15 V

14 OUT3

13 OUT4

bb

OUT1

OUT2

OUT3

OUT4

ST1/2

Output 1 .. 4, protected high-side power output

of channel 1 .. 4. Design the wiring for the

max. short circuit current

17

14

13

4

12 V

bb

V

10

11 V

bb

Diagnostic feedback 1/2 of channel 1 and

channel 2, open drain, low on failure

Diagnostic feedback 3/4 of channel 3 and

channel 4, open drain, low on failure

8

ST3/4

2

6

GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)

GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

1)

With external current limit (e.g. resistor R

=150

GND

Ω

) in GND connection, resistor in series with ST

connection, reverse load current limited by connected load.

Data Book

604

01.07.97

PROFET^®BTS 721 L1

Block diagram

Four Channels; Open Load detection in on state;

+ V

bb

Leadframe

Current

limit 1

Gate 1

protection

Voltage

source

Overvoltage

protection

Channel 1

V_Logic

18

OUT1

Limit for

unclamped

ind. loads 1

Voltage

sensor

Level shifter

Rectifier 1

Temperature

sensor 1

3

5

4

IN1

IN2

Open load

Short to Vbb

detection 1

Charge

pump 1

Logic

ESD

ST1/2

Charge

pump 2

Gate 2

protection

Current

limit 2

Channel 2

17

OUT2

Level shifter

Rectifier 2

Limit for

unclamped

ind. loads 2

Load

2

GND1/2

Temperature

sensor 2

Open load

Short to Vbb

detection 2

R

O1

GND1/2

R

O2

Signal GND

Chip 1

Load GND

+ V

bb

Leadframe

Channel 3

14

OUT3

Logic and protection circuit of chip 2

(equivalent to chip 1)

7

9

8

IN3

IN4

ST3/4

Channel 4

13

OUT4

Load

6

GND3/4

PROFET

R

O3

R

O4

GND3/4

Signal GND

Chip 2

Load GND

Chip 2

Leadframe connected to pin 1, 10, 11, 12, 15, 1 , 1 , 20

Data Book

605

01.07.97

PROFET^®BTS 721 L1

Maximum Ratings at T_j= 25°C unless otherwise specified

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 46)07)

V_bb

43

34

V

Supply voltage for full short circuit protection

T_j,start=-40 ...+150°C

Load current (Short-circuit current, see page 56)08)

I_L

self-limited

60

A

V

)

Load dump protection²V_LoadDump= U_A+ V_s, U_A= 13.5 V V_Load

4⁾

R_I³⁾= 2 Ω, t_d= 200 ms; IN= low or high,

dump

each channel loaded with R_L= 4.7Ω,

Operating temperature range

Storage temperature range

Power dissipation (DC)⁵

(all channels active)

T_j

T_stg

-40 ...+150

-55 ...+150

°C

T_a= 25°C: P_tot

T_a= 85°C:

3.7

1.9

W

Inductive load switch-off energy dissipation, single pulse

V_bb=12V, T_j,start=150°C⁵⁾,

0.3

0.65

1.5

J

I_L= 2.9 A, Z_L= 58mH, 0Ω

I_L= 4.3 A, Z_L= 58mH, 0Ω

I_L= 6.3 A, Z_L= 58mH, 0Ω

one channel: E_AS

two parallel channels:

four parallel channels:

612 and page 613

see diagrams on page 10 and page 11

Electrostatic discharge capability (ESD)

(Human Body Model)

V_ESD

1.0

kV

Input voltage (DC)

Current through input pin (DC)

Current through status pin (DC)

V_IN

I_IN

I_ST

-10 ... +16

±2.0

V

mA

±5.0

611

see internal circuit diagram page 9

Thermal resistance

junction - soldering point^5),6)

junction - ambient⁵⁾

each channel: R_thjs

one channel active: R_thja

all channels active:

15 K/W

41

34

2)

Supply voltages higher than V_bb(AZ)require an external current limit for the GND and status pins, e.g. with a

150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for input

protection is integrated.

Ω

3)

4)

R = internal resistance of the load dump test pulse generator

V_{Load dump}is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70

I

5)

µ

m thick) copper area for V

bb

859

connection. PCB is vertical without blown air. See page 16

6)

859

Soldering point: upper side of solder edge of device pin 15. See page 16

Data Book

606

01.07.97

PROFET^®BTS 721 L1

Parameter and Conditions, each of the four channels Symbol

Values

Unit

at T

j

= 25 °C, V = 12 V unless otherwise specified

bb

min

--

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (V to OUT)

I_L= 2 A

bb

each channel,

mΩ

T_j= 25°C: R_ON

T_j= 150°C:

85

170

100

200

two parallel channels, T_j= 25°C:

four parallel channels, T_j= 25°C:

43

22

50

25

--

Nominal load current

one channel active: I_L(NOM)

two parallel channels active:

four parallel channels active:

2.5

3.8

5.9

2.9

4.3

6.3

A

Device on PCB⁵⁾, T_a= 85°C, T_j≤ 150°C

Output current while GND disconnected or pulled

I_L(GNDhigh)

--

10 mA

612

up; V = 30 V, V = 0, see diagram page 10

bb

IN

Turn-on time

Turn-off time

to 90% V_OUT: t_on

to 10% V_OUT: t_off

80

200

400

µs

R_L= 12 Ω, T =-40...+150°C

j

Slew rate on

10 to 30% V_OUT

Slew rate off

dV/dt_on

0.1

--

1 V/µs

,

R_L= 12 Ω

,

T =-40...+150°C:

j

-dV/dt_off

70 to 40% V_OUT, R_L= 12 Ω

,

T =-40...+150°C:

j

Operating Parameters

)

Operating voltage⁷

T_j=-40...+150°C: V_bb(on)

T_j=-40...+150°C: V_bb(under)

T_j=-40...+25°C: V_{bb(u rst)}

T_j=+150°C:

5.0

3.5

--

34

V

Undervoltage shutdown

Undervoltage restart

5.0

7.0

Undervoltage restart of charge pump

617

V_bb(ucp)

--

5.6

0.2

7.0

V

see diagram page 15

T_j=-40...+150°C:

Undervoltage hysteresis

∆V_bb(under)= V_{bb(u rst)}- V_bb(under)

∆V_bb(under)

--

Overvoltage shutdown

Overvoltage restart

T_j=-40...+150°C: V_bb(over)

T_j=-40...+150°C: V_{bb(o rst)}

T_j=-40...+150°C: ∆V_bb(over)

T_j=-40...+150°C: V_bb(AZ)

34

33

--

43

--

V

Overvoltage hysteresis

Overvoltage protection⁸

0.5

47

--

)

42

--

I_bb= 40 mA

7)

At supply voltage increase up to V =5.6V typ without charge pump, V

≈V

- 2 V

bb

OUT

bb

8)

611.

in circuit diagram on page 9.

see also V

ON(CL)

Data Book

607

01.07.97

PROFET^®BTS 721 L1

Parameter and Conditions, each of the four channels Symbol

Values

Unit

at T

j

= 25 °C, V = 12 V unless otherwise specified

bb

min

typ

max

Standby current, all channels off

V_IN= 0

T_j=25°C

T_j=150°C:

:

I_bb(off)

I_L(off)

--

28

44

60

70

µA

Leakage output current (included in I_bb(off)

VIN = 0

)

--

12

Operating current ⁹⁾, V_IN= 5V, _Tj=-40...+150°C

I_GND

--

2

8

3

12

mA

I_GND= I_GND1/2+ I_GND3/4

,

one channel on:

four channels on:

Protection Functions

Initial peak short circuit current limit, (see timing

615)

diagrams, page 13)

each channel, _Tj=-40°C: I_L(SCp)

_Tj=25°C:

11

9

5

18

14

8

25

22

14

A

_Tj=+150°C:

two parallel channels

four parallel channels

twice the current of one channel

four times the current of one channel

Repetitive short circuit current limit,

T_j= T_jt

each channel I_L(SCr)

two parallel channels

four parallel channels

--

8

--

A

615)

(see timing diagrams, page 13)

Initial short circuit shutdown time

T_j,start=-40°C: t_off(SC)

_j,start= 25°C:

--

3.8

3

--

ms

V

T

615 and timing diagrams on page 615)

(see page 12 and timing diagrams on page 13)

Output clamp (inductive load switch off)¹⁰⁾

at V_ON(CL)= V_bb- V_OUT

V_ON(CL)

--

47

--

Thermal overload trip temperature

Thermal hysteresis

T_jt

150

--

°C

∆T_jt

10

K

Reverse Battery

Reverse battery voltage ¹¹⁾

-V_bb

--

32

V

Drain-source diode voltage (V > V

)

-V_ON

610

-- mV

out

bb

_IL=-2.9A, Tj =+150°C

9

)

Add I , if I > 0

ST

10

)

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest

V

ON(CL)

11

Requires a 150

Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal

operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature

protection is not active during reverse current operation! Input and Status currents have to be limited (see

max. ratings page 630a6nadncdirccuirictupiat gpeag9e).611).

Data Book

608

01.07.97

PROFET^®BTS 721 L1

Parameter and Conditions, each of the four channels Symbol

Values

Unit

at T

j

= 25 °C, V = 12 V unless otherwise specified

bb

min

typ

max

Diagnostic Characteristics

Open load detection current, (on-condition)

20

--

400 mA

300

each channel, T_j= -40°C: I _{L (OL)}

1

T_j= 25°C:

T_j= 150°C:

twice the current of one channel

four times the current of one channel

two parallel channels

four parallel channels

Open load detection voltage¹²⁾

T_j=-40..+150°C: V_OUT(OL)

2

3

4

V

Internal output pull down

(OUT to GND), V

=5V

T_j=-40..+150°C: R_O

4

10

30

kΩ

OUT

)

Input and Status Feedback¹³

Input resistance

R_I

2.5

1.7

1.5

3.5

--

6

3.5

--

kΩ

V

611)

(see circuit page 9)

T_j=-40..+150°C:

Input turn-on threshold voltage

Input turn-off threshold voltage

Input threshold hysteresis

V_IN(T+)

T_j=-40..+150°C:

V_IN(T-)

--

V

T_j=-40..+150°C:

∆ V_IN(T)

--

1

0.5

--

V

Off state input current

T_j=-40..+150°C:

V_IN= 0.4 V: I_IN(off)

50

µA

On state input current

V_IN= 5 V: I_IN(on)

20

50

90

µA

µs

T_j=-40..+150°C:

Delay time for status with open load after switch

off (other channel in off state)

616),

(see timing diagrams, page 14),

t_{d(ST OL4)}

t_{d(ST OL5)}

t_d(ST)

100

320

800

T_j=-40..+150°C:

Delay time for status with open load after switch

off (other channel in on state)

616),

(see timing diagrams, page 14),

--

5

20

µs

T_j=-40..+150°C:

Status invalid after positive input slope

200

600

(open load)

T_j=-40..+150°C:

Status output (open drain)

Zener limit voltage T_j=-40...+150°C, I_ST= +1.6 mA: V_ST(high)

5.4

--

6.1

--

0.4

0.6

V

ST low voltage

T_j=-40...+25°C, I_ST= +1.6 mA: V_ST(low)

T_j= +150°C, I_ST= +1.6 mA:

12)

External pull up resistor required for open load detection in off state.

13)

If ground resistors R

are used, add the voltage drop across these resistors.

GND

Data Book

609

01.07.97

PROFET^®BTS 721 L1

Truth Table

Channel 1 and 2

Channel 3 and 4

IN1

IN3

IN2

IN4

OUT1

OUT3

OUT2

OUT4

ST1/2

ST3/4

Chip 1

Chip 2

(equivalent to channel 1 and 2)

BTS 721L1

Normal operation

Open load

L

H

L

H

L

H

L

H

L

H

Z

H

L

H

L

H

L

H

14)

Channel 1 (3)

H(L

)

H

X

H

X

H

L

14)

Channel 2 (4)

Channel 1 (3)

L

H

X

L

H

L

H

L

H

X

L

H

X

H

Z

H

L

H

X

H(L

H

L

15)

Short circuit to V

Overtemperature

bb

L

H

16)

15)

H(L

L

)

Channel 2 (4)

both channel

L

H

X

L

X

H

L

H

X

L

H

L

H

X

L

H

X

L

H

X

L

X

L

H

L

X

L

H

16)

H(L

H

L

H

L

H

L

H

Channel 1 (3)

Channel 2 (4)

Undervoltage/ Overvoltage

L = "Low" Level

H = "High" Level

X = don't care

Z = high impedance, potential depends on external circuit

Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and

outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4

have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms

I

bb

V

ON1

ON3

V

Leadframe

bb

V

ON2

ON4

I

IN1

IN2

IN3

IN4

V

bb

3

5

7

9

I

IN1

IN3

L1

L3

18

17

14

13

OUT1

OUT2

OUT3

OUT4

PROFET

Chip 1

PROFET

Chip 2

IN2

IN4

L2

L4

I

ST3/4

ST1/2

4

8

ST1/2

ST3/4

V

GND1/2

2

GND3/4

6

V

IN4

IN1

IN3

IN2

ST1/2

V

ST3/4

V

OUT1

OUT3

V

OUT4

I

OUT2

GND1/2

GND3/4

R

GND1/2

GND3/4

Leadframe (V ) is connected to pin 1,10,11,12,15,16,19,20

bb

External R

optional; two resistors R

,R

=150 Ω or a single resistor R

=75 Ω for

GND

GND1/2

GND3/4

GND

reverse battery protection up to the max. operating voltage.

14)

15)

With additional external pull up resistor

An external short of output to V_bbin the off state causes an internal current from output to ground. If R_GNDis

used, an offset voltage at the GND and ST pins will occur and the V_{ST low}signal may be errorious.

16)

Low resistance to V may be detected by no-load-detection

bb

Data Book

610

01.07.97

PROFET^®BTS 721 L1

Input circuit (ESD protection), IN1...4

Overvoltage protection of logic part

GND1/2 or GND3/4

R

+ V

bb

I

IN

V

Z2

R

I

IN

ESD-ZD_I

I

IN

Logic

GND

ST

R

ST

V

Z1

ESD zener diodes are not to be used as voltage clamp at

DC conditions. Operation in this mode may result in a drift of

the zener voltage (increase of up to 1 V).

GND

R

GND

Signal GND

Status output, ST1/2 or ST3/4

V

Z1

= 6.1 V typ., V = 47 V typ., R = 3.5 kΩ typ.,

Z2

I

R

GND

= 150 Ω

+5V

R

ST(ON)

ST

Reverse battery protection

5V

V

bb

-

ESD-

ZD

R_ST

Logic

GND

R_I

IN

ST

OUT

ESD-Zener diode: 6.1 V typ., max 5.0 mA; R

< 380 Ω

at 1.6 mA, ESD zener diodes are not to be used as voltage

ST(ON)

Power

Inverse

Diode

clamp at DC conditions. Operation in this mode may resul

a drift of the zener voltage (increase of up to 1 V).

t in

GND

R_L

R

GND

Inductive and overvoltage output clamp,

OUT1...4

Power GND

Signal GND

R

GND

= 150 Ω, R = 3.5 kΩ typ,

I

+V

bb

Temperature protection is not active during inverse current

operation.

V

Z

V_ON

OUT

PROFET

Power GND

V

ON

clamped to V = 47 V typ.

ON(CL)

Data Book

611

01.07.97

PROFET^®BTS 721 L1

Open-load detection, OUT1...4

ON-state diagnostic condition:

GND disconnect with GND pull up

(channel 1/2 or 3/4)

V

ON

< R_ON·I_L(OL); IN high

V

+ V

bb

IN1

OUT1

OUT2

V

IN1

PROFET

IN2

ST

V

IN2

V_ON

GND

ON

OUT

V

Open load

detection

V

GND

Logic

unit

ST

V

bb

Any kind of load. If V

> V - V

device stays off

IN(T+)

GND

IN

Due to V

> 0, no V = low signal available.

ST

GND

OFF-state diagnostic condition:

V

disconnect with energized inductive

bb

V

OUT

> 3 V typ.; IN low

load

R

V

EXT

V

bb

IN1

OUT1

high

OFF

PROFET

IN2

ST

OUT2

OUT

GND

Open load

detection

Logic

unit

R

O

V

bb

Signal GND

For an inductive load current up to the limit defined by E

AS

and diagram on page 11) each

(max. ratings see page 3

switch is protected against loss of V

606

613)

.

bb

GND disconnect

(channel 1/2 or 3/4)

Consider at your PCB layout that in the case of Vbb dis-

connection with energized inductive load the whole load

current flows through the GND connection.

I

bb

V

bb

V

bb

IN1

IN2

ST

OUT1

PROFET

OUT2

GND

V

IN2

IN1

GND

ST

Any kind of load. In case of IN=high is V

OUT

≈ V -V .

IN IN(T+)

Due to V

> 0, no V = low signal available.

ST

GND

Data Book

612

01.07.97

PROFET^®BTS 721 L1

Inductive load switch-off energy

dissipation

E

bb

E

AS

E

Load

V

bb

IN

OUT

PROFET

L

=

ST

L

GND

Z

L

{

E

R

L

Energy stored in load inductance:

2

1

E = / ·L·I

2

L

While demagnetizing load inductance, the energy

dissipated in PROFET is

E = E_bb+ E_L- E_R=

AS

V

·i (t) dt,

ON(CL) L

with an approximate solution for R

> 0Ω:

L

I

2

·

R

L

I ·R

L L

OUT(CL)

L

·

E =

AS

(V

+|V |) ln (1+

OUT(CL)

)

bb

|V

|

L

Maximum allowable load inductance for

5)

a single switch off (one channel)

L = f (I );

T

= 150°C, V = 12 V, R = 0

Ω

L

j,start

bb

L

L [mH]

10000

1000

100

10

1

2

3

4

5

6

7

8

I

[A]

L

Data Book

613

01.07.97

PROFET^®BTS 721 L1

Typ. on-state resistance

Typ. standby current

R

= f (V ,T ); I = 2 A, IN = high

I

= f (T ); V = 9...34 V, IN

= low

1...4

ON

L

bb(off)

j

bb

bb j

R

[mOhm]

I

[µA]

ON

bb(off)

300

250

200

150

100

50

60

50

40

30

20

10

Tj = 150°C

85°C

25°C

-40°C

0

10

20

3

0

40

[V]

-50

0

50

100

150

200

V

bb

T [°C]

j

Typ. open load detection current

Typ. initial short circuit shutdown time

I

= f (V ,T ); IN = high

t

= f (T

)

; V =12 V

bb

L(OL)

off(SC)

bb j

j,start

I

[mA]

t

[msec]

L(OL)

off(SC)

220

4

200

180

160

140

120

100

80

-40°C

3.5

3

25°C

2.5

2

85°C

Tj = 150°C

1.5

1

60

40

0.5

20

0

5

10

15

20

25

30

-50

0

50

100

150

200

V

bb

[V]

T

[°C]

j,start

Data Book

614

01.07.97

PROFET^®BTS 721 L1

Timing diagrams

Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams

are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently

the diagrams are valid for each channel as well as for permuted channels

Figure 1a: V turn on:

Figure 2b: Switching an inductive load

bb

IN1

IN

IN2

t

d(ST)

ST

V

bb

*)

V

OUT1

OUT

V

OUT2

I

L

I

L(OL)

ST open drain

t

*) if the time constant of load is too large, open-load-status may

occur

Figure 2a: Switching a lamp:

Figure 3a: Turn on into short circuit:

shut down by overtemperature, restart by cooling

IN

other channel: normal

IN1

ST

I

L1

I

V

L(SCp)

OUT

I

L(SCr)

I

L

t

off(SC)

ST

t

The initial peak current should be limited by the lamp and not by

the initial short circuit current I_L(SCp)= 14 A typ. of the device.

Heating up of the chip may require several milliseconds, depending

614)

see page 12)

j,start

on external conditions (t

vs. T

off(SC)

Data Book

615

01.07.97

PROFET^®BTS 721 L1

Figure 3b: Turn on into short circuit:

Figure 5a: Open load: detection in ON-state, open

shut down by overtemperature, restart by cooling

(two parallel switched channels 1 and 2)

load occurs in on-state

IN1

IN1/2

IN2

channel 2: normal

I

+ I

L1

L2

I

L(SCp)

V

OUT1

I

L(SCr)

channel 1:

open

I

L1

open

load

normal

load

t

off(SC)

t

d(ST OL1)

t

ST1/2

t

d(ST OL1)

d(ST OL2)

ST

t

t_{d(ST OL1)}= 30 µs typ., t_{d(ST OL2)}= 20 µs typ

Figure 5b: Open load: detection in ON-state, turn

on/off to open load

Figure 4a: Overtemperature:

Reset if

T <T

j jt

IN1

IN

IN2

channel 2: normal operation

ST

V

OUT1

OUT

I

L1

channel 1: open load

T

J

t

d(ST)

d(ST OL4)

d(ST)

d(ST OL5)

ST

t

The status delay time td(STOL4) allows to distinguish between the

failure modes "open load in ON-state" and "overtemperature".

Data Book

616

01.07.97

PROFET^®BTS 721 L1

Figure 5c: Open load: detection in ON- and OFF-state

Figure 6b: Undervoltage restart of charge pump

(with R

), turn on/off to open load

EXT

V

ON(CL)

V

on

IN1

IN2

channel 2: normal operation

V

off-

state

on-

state

off-

state

OUT1

V

bb(over)

I_L1

V

channel 1: open

V

bb(o rst)

bb(u rst)

V

bb(u cp)

V

t

ST

t

bb(under)

t

d(ST OL5)

d(ST)

V

bb

t

IN = high, normal load conditions.

Charge pump starts at V_bb(ucp)= 5.6V typ.

t_{d(ST OL5)}depends on external circuitry because of high

impedance

Figure 7a: Overvoltage:

Figure 6a: Undervoltage:

IN

V

bb(over)

bb(o rst)

ON(CL)

bb

V

bb

V

bb(u cp)

bb(under)

V

bb(u rst)

V

OUT

V

OUT

ST

ST open drain

t

Data Book

617

01.07.97


型号：	BTS721-L1
厂家：	ETC
描述：	?5.0-34V. 100mΩ Limit(scr) 8A DSO-20-9? ？ 5.0-34V 。 100mΩ的限制（ SCR） 8A DSO- 20-9 ？\n
文件：	总14页 (文件大小：470K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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