BUK9Y58-75B,115 [ETC]
MOSFET N-CH 75V 20.73A LFPAK;
| 型号： | BUK9Y58-75B,115 |
| 厂家： | 
ETC |
| 描述： | MOSFET N-CH 75V 20.73A LFPAK |
| 文件： | 总14页 (文件大小：814K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK9Y58-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
Suitable for logic level gate drive
on-state resistance
sources
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
General purpose power switching
solenoid drives
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source
voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
-
-
-
-
75
V
ID
drain current
VGS = 5 V; Tmb = 25 °C;
20.7
3
A
see Figure 1; see Figure 4
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
60.4
W
Static characteristics
RDSon drain-source
VGS = 5 V; ID = 10 A;
Tj = 25 °C; see Figure 13
-
-
52
47
58
53
mΩ
mΩ
on-state
resistance
VGS = 10 V; ID = 10 A;
Tj = 25 °C
BUK9Y58-75B
Nexperia
N-channel TrenchMOS logic level FET
Table 1.
Symbol
Quick reference data …continued
Parameter Conditions
Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
ID = 20.73 A; Vsup ≤ 75 V;
RGS = 50 Ω; VGS = 5 V;
-
-
34
mJ
avalanche energy Tj(init) = 25 °C; unclamped
Dynamic characteristics
QGD gate-drain charge VGS = 5 V; ID = 10 A;
DS = 60 V; Tj = 25 °C;
-
5
-
nC
V
see Figure 14
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
mb
D
S
2
3
G
4
mbb076
mb
mounting base; connected to
drain
1
2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK9Y58-75B
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
BUK9Y58-75B
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 7 April 2010
2 of 14
BUK9Y58-75B
Nexperia
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
75
Unit
V
drain-source voltage
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
-
-
VDGR
RGS = 20 kΩ; Tmb ≥ 25 °C;
75
V
T
mb ≤ 175 °C
VGS
ID
gate-source voltage
drain current
-15
-
-
-
15
V
A
Tmb = 25 °C; VGS = 5 V; see Figure 1;
see Figure 4
20.73
T
mb = 100 °C; VGS = 5 V; see Figure 1
-
-
-
-
14.66
82.9
A
A
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
see Figure 4
Ptot
Tstg
Tj
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
-
-
-
60.4
175
175
W
-55
-55
°C
°C
junction temperature
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
-
-
20.73
82.9
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive
ID = 20.73 A; Vsup ≤ 75 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
-
-
-
-
34
-
mJ
J
drain-source
avalanche energy
[1][2][3]
EDS(AL)R
repetitive drain-source see Figure 3
avalanche energy
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
BUK9Y58-75B
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 7 April 2010
3 of 14
BUK9Y58-75B
Nexperia
N-channel TrenchMOS logic level FET
003aac522
03na19
120
30
ID
P
der
(A)
(%)
80
20
10
40
0
0
0
0
50
100
150
200
50
100
150
200
Tmb (°C)
T
mb
(°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac501
102
IAL
(A)
10
1
(1)
(2)
(3)
10-1
10-2
10-3
10-2
10-1
1
10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK9Y58-75B
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 7 April 2010
4 of 14
BUK9Y58-75B
Nexperia
N-channel TrenchMOS logic level FET
003aac622
103
ID
(A)
102
Limit RDSon = VDS / ID
10μs
10
1
100μs
DC
1ms
10ms
100ms
10-1
1
10
102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance
from junction to
mounting base
see Figure 5
-
-
2.53
K/W
003aac483
10
Zth (j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
t
p
0.05
0.02
P
10-1
δ =
T
single shot
t
t
p
T
10-2
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
BUK9Y58-75B
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 7 April 2010
5 of 14
BUK9Y58-75B
Nexperia
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
75
70
0.5
-
-
-
-
-
-
V
V
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
see Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
1.25
-
1.65
-
2.15
2.45
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10; see Figure 11
IDSS
drain leakage current
gate leakage current
VDS = 75 V; VGS = 0 V; Tj = 175 °C
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = +15 V; Tj = 25 °C
VDS = 0 V; VGS = -15 V; Tj = 25 °C
VGS = 4.5 V; ID = 10 A; Tj = 25 °C
-
-
-
-
-
-
-
500
1
µA
µA
nA
0.02
IGSS
2
2
-
100
100
61
nA
RDSon
drain-source on-state
resistance
mΩ
mΩ
VGS = 5 V; ID = 10 A; Tj = 175 °C;
see Figure 12
-
145
VGS = 5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
-
-
52
47
58
53
mΩ
mΩ
VGS = 10 V; ID = 10 A; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 10 A; VDS = 60 V; VGS = 5 V;
Tj = 25 °C; see Figure 14
-
-
-
-
-
-
10.7
2.3
5
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
853
106
52
1137
127
71
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 3 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
15
16
30
9
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
-
0.85
1.2
V
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
-
-
53
-
-
ns
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Qr
recovered charge
122
nC
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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BUK9Y58-75B
Nexperia
N-channel TrenchMOS logic level FET
003aac969
003aac973
50
ID
160
3
3.2
3.6
5 10
VGS (V) = 10
2.6
(A)
RDSon
(mΩ)
40
5
4
120
30
20
10
3.6
VGS (V) = 15
80
40
3.2
3
2.6
2.4
0
0
2
4
6
8
10
0
10
20
30
40
50
V
DS (V)
ID (A)
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
003aac974
003aac970
20
20
ID
gfs
(A)
(S)
15
10
5
15
10
5
Tj = 175 °C
Tj = 25 °C
0
0
0
10
20
30
0
1
2
3
4
ID (A)
VGS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values.
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
BUK9Y58-75B
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 7 April 2010
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BUK9Y58-75B
Nexperia
N-channel TrenchMOS logic level FET
003aad557
003aad565
2.5
10-1
ID
(A)
10-2
VGS(th)
(V)
max
2
1.5
1
typ
min
typ
max
10-3
10-4
10-5
10-6
min
0.5
0
-60
0
1
2
3
0
60
120
180
Tj (°C)
VGS (V)
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
03nq03
003aac972
3
100
RDSON
(mΩ)
a
2
80
60
40
1
0
-60
-20
20
60
100
140
180
0
4
8
12
16
VGS (V)
Tj (°C)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
BUK9Y58-75B
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 7 April 2010
8 of 14
BUK9Y58-75B
Nexperia
N-channel TrenchMOS logic level FET
003aac975
003aac968
5
VGS
(V)
104
C
(pF)
4
3
2
1
VDS = 14 V
103
102
10
VDS = 60 V
Ciss
Coss
Crss
0
0
4
8
12
10-1
1
10
102
Q
G (nC)
VDS (V)
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
003aac971
100
IS
(A)
80
60
40
Tj = 175 °C
20
Tj = 25 °C
0
0.2
0.6
1
1.4
V
SD (V)
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
BUK9Y58-75B
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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Nexperia
N-channel TrenchMOS logic level FET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
A
2
E
A
C
c
E
1
b
2
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2 e
A
(A )
3
C
A
1
θ
L
detail X
y
C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
D
(1)
D
(1)
(1)
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max
1.20 0.15 1.10
1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10
0.35 3.62 2.0 0.7 0.19 0.24 3.80
5.0 3.3
4.8 3.1
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
8°
0°
mm
0.25
4.20
1.27
0.25 0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-10-13
06-03-16
SOT669
MO-235
Fig 17. Package outline SOT669 (LFPAK)
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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Nexperia
N-channel TrenchMOS logic level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK9Y58-75B_4
Modifications:
20100407
Product data sheet
-
BUK9Y58-75B_3
• Status changed from objective to product.
20100216 Objective data sheet
BUK9Y58-75B_3
-
BUK9Y58-75B_2
BUK9Y58-75B
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 7 April 2010
11 of 14
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Nexperia
N-channel TrenchMOS logic level FET
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
9.2 Definitions
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of a Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia accepts no
liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the Nexperia product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. Nexperia does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in the
Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BUK9Y58-75B
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 7 April 2010
12 of 14
BUK9Y58-75B
Nexperia
N-channel TrenchMOS logic level FET
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
BUK9Y58-75B
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 04 — 7 April 2010
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Nexperia
N-channel TrenchMOS logic level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 07 April 2010
相关型号：
BUK9Y7R0-60EL
Single N-channel 60 V, 4.5 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technologyProduction
NEXPERIA
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