BUL45D2/D [ETC]
High Speed， High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network ; 高速，高增益双极NPN功率晶体管，集成集电极发射二极管和内置高效抗饱和网络\n
| 型号： | BUL45D2/D |
| 厂家： | 
ETC |
| 描述： | High Speed， High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
| 文件： | 总12页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
BUL45D2
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
POWER TRANSISTORS
5 AMPERES
700 VOLTS
75 WATTS
The BUL45D2 is state–of–art High Speed High gain BIPolar
transistor (H2BIP). High dynamic characteristics and lot to lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an
h
FE
window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ I = 100 mA
C
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V
CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter
Spreads
It’s characteristics make it also suitable for PFC application.
CASE 221A–09
TO–220AB
MAXIMUM RATINGS
Rating
Symbol
Value
400
700
700
12
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
CES
V
EBO
Collector Current — Continuous
— Peak (1)
I
C
5
10
I
CM
Base Current — Continuous
Base Current — Peak (1)
I
2
4
Adc
B
I
BM
*Total Device Dissipation @ T = 25_C
P
75
0.6
Watt
W/_C
_C
C
D
*Derate above 25°C
Operating and Storage Temperature
T , T
J
–65 to 150
stg
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
_C/W
R
R
1.65
62.5
θ
JC
JA
θ
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
L
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 2
BUL45D2/D
BUL45D2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 100 mA, L = 25 mH)
C
V
400
700
12
450
910
14.1
Vdc
Vdc
CEO(sus)
Collector–Base Breakdown Voltage
V
V
CBO
EBO
CEO
(I
CBO
= 1 mA)
Emitter–Base Breakdown Voltage
(I = 1 mA)
Vdc
EBO
Collector Cutoff Current
(V = Rated V , I = 0)
I
100
µAdc
µAdc
CE
CEO
B
Collector Cutoff Current (V = Rated V
, V = 0)
EB
@ T = 25°C
I
100
500
100
CE
CES
C
CES
@ T = 125°C
C
Collector Cutoff Current (V = 500 V, V = 0)
@ T = 125°C
C
CE
EB
Emitter–Cutoff Current
(V = 10 Vdc, I = 0)
I
100
µAdc
EBO
EB
C
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(I = 0.8 Adc, I = 80 mAdc)
V
V
Vdc
BE(sat)
@ T = 25°C
0.8
0.7
1
0.9
C
B
C
@ T = 125°C
C
(I = 2 Adc, I = 0.4 Adc)
@ T = 25°C
0.89
0.79
1
0.9
C
B
C
@ T = 125°C
C
Collector–Emitter Saturation Voltage
(I = 0.8 Adc, I = 80 mAdc)
Vdc
CE(sat)
@ T = 25°C
0.28
0.32
0.4
0.5
C
B
C
@ T = 125°C
C
(I = 2 Adc, I = 0.4 Adc)
@ T = 25°C
0.32
0.38
0.5
0.6
C
B
C
@ T = 125°C
C
(I = 0.8 Adc, I = 40 mAdc)
@ T = 25°C
0.46
0.62
0.75
1
C
B
C
@ T = 125°C
C
DC Current Gain
(I = 0.8 Adc, V = 1 Vdc)
C
h
FE
—
@ T = 25°C
22
20
34
29
CE
C
@ T = 125°C
C
(I = 2 Adc, V = 1 Vdc)
@ T = 25°C
10
7
14
9.5
C
CE
C
@ T = 125°C
C
DIODE CHARACTERISTICS
Forward Diode Voltage
V
EC
V
(I = 1 Adc)
@ T = 25°C
1.04
0.7
1.5
1.6
1.2
EC
C
@ T = 125°C
C
(I = 2 Adc)
EC
@ T = 25°C
1.2
C
@ T = 125°C
C
(I = 0.4 Adc)
EC
@ T = 25°C
0.85
0.62
C
@ T = 125°C
C
Forward Recovery Time (see Figure 27)
T
fr
330
ns
(I = 1 Adc, di/dt = 10 A/µs)
F
@ T = 25°C
C
(I = 2 Adc, di/dt = 10 A/µs)
@ T = 25°C
360
320
F
C
(I = 0.4 Adc, di/dt = 10 A/µs)
F
@ T = 25°C
C
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2
BUL45D2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
f
13
50
MHz
pF
T
(I = 0.5 Adc, V = 10 Vdc, f = 1 MHz)
C
CE
Output Capacitance
C
75
ob
(V = 10 Vdc, I = 0, f = 1 MHz)
CB
E
Input Capacitance
C
340
500
pF
ib
(V = 8 Vdc)
EB
DYNAMIC SATURATION VOLTAGE
@ 1 µs
@ 3 µs
@ 1 µs
@ 3 µs
@ T = 25°C
V
3.7
9.4
V
V
V
V
C
CE(dsat)
I
= 1 A
= 100 mA
= 300 V
@ T = 125°C
C
C
Dynamic Saturation
Voltage:
Determined 1 µs and
3 µs respectively
I
V
B1
@ T = 25°C
0.35
2.7
C
CC
@ T = 125°C
C
@ T = 25°C
3.9
12
C
after rising I
B1
I
C
= 2 A
= 0.8 A
= 300 V
@ T = 125°C
C
reaches 90% of final
I
B1
I
B1
@ T = 25°C
0.4
1.5
C
V
CC
@ T = 125°C
C
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–on Time
Turn–off Time
Turn–on Time
Turn–off Time
@ T = 25°C
t
on
t
off
t
on
t
off
90
105
150
1.3
150
2.4
ns
µs
ns
µs
C
I
= 2 Adc, I = 0.4 Adc
B1
@ T = 125°C
C
C
C
I
B2
= 1 Adc
@ T = 25°C
1.15
1.5
C
V
CC
= 300 Vdc
@ T = 125°C
C
@ T = 25°C
90
110
C
I
= 2 Adc, I = 0.4 Adc
@ T = 125°C
B1
C
I
= 0.4 Adc
= 300 Vdc
B2
@ T = 25°C
2.1
C
V
CC
@ T = 125°C
3.1
C
SWITCHING CHARACTERISTICS: Inductive Load (V
= 300 V, V = 15 V, L = 200 µH)
CC
clamp
Fall Time
@ T = 25°C
t
90
93
150
0.9
ns
µs
ns
ns
µs
ns
C
f
@ T = 125°C
C
I
= 1 Adc
= 100 mAdc
= 500 mAdc
C
Storage Time
Crossover Time
Fall Time
@ T = 25°C
t
s
t
c
0.72
1.05
C
I
I
B1
B2
@ T = 125°C
C
@ T = 25°C
95
95
150
150
2.25
300
C
@ T = 125°C
C
@ T = 25°C
t
f
80
105
C
@ T = 125°C
C
I
C
= 2 Adc
= 0.4 Adc
= 0.4 Adc
Storage Time
Crossover Time
@ T = 25°C
t
t
1.95
C
s
I
I
B1
B2
@ T = 125°C
2.9
C
@ T = 25°C
225
450
C
c
@ T = 125°C
C
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3
BUL45D2
TYPICAL STATIC CHARACTERISTICS
100
80
60
40
20
0
100
V
CE
= 1 V
V
CE
= 5 V
T = 125°C
T = 125°C
J
80
60
40
20
0
J
T = 25°C
J
T = 25°C
J
T = -ā20°C
J
T = -ā20°C
J
0.001
0.01
0.1
1
10
10
10
0.001
0.01
0.1
1
10
10
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volt
4
3
2
10
T = 25°C
J
I /I = 5
C B
T = 25°C
J
1
T = 125°C
J
5 A
3 A
1
0
2 A
4 A
T = -ā20°C
J
1 A
I = 500 mA
C
0.1
0.001
0.001
0.01
0.1
I , BASE CURRENT (AMPS)
1
0.01
0.1
1
I , COLLECTOR CURRENT (AMPS)
C
B
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
10
10
I /I = 10
C B
I /I = 20
C B
1
1
T = 125°C
J
T = 25°C
J
T = -ā20°C
T = -ā20°C
J
J
T = 125°C
J
T = 25°C
J
0.1
0.001
0.1
0.001
0.01
0.1
1
0.01
0.1
1
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 5. Collector–Emitter Saturation Voltage
Figure 6. Collector–Emitter Saturation Voltage
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4
BUL45D2
TYPICAL STATIC CHARACTERISTICS
10
10
I /I = 5
C B
I /I = 10
C B
T = 25°C
J
T = -ā20°C
J
1
1
T = -ā20°C
J
T = 125°C
J
T = 125°C
J
T = 25°C
J
0.1
0.1
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. Base–Emitter Saturation Region
Figure 8. Base–Emitter Saturation Region
10
10
I /I = 20
C B
25°C
1
1
T = -ā20°C
J
125°C
T = 125°C
J
T = 25°C
J
0.1
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
REVERSE EMITTER-COLLECTOR CURRENT (AMPS)
Figure 9. Base–Emitter Saturation Region
Figure 10. Forward Diode Voltage
1000
100
1000
900
800
700
600
T = 25°C
T = 25°C
J
J
C
ib
(pF)
BVCER @ 10 mA
f
= 1 MHz
(test)
C
ob
(pF)
10
1
BVCER(sus) @ 200 mA
500
400
1
10
100
10
100
(Ω)
1000
V , REVERSE VOLTAGE (VOLTS)
R
R
BE
Figure 11. Capacitance
Figure 12. BVCER = f(ICER)
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5
BUL45D2
TYPICAL SWITCHING CHARACTERISTICS
5
1000
800
600
400
I = I
Bon Boff
I
= I
T = 125°C
T = 25°C
J
Bon Boff
J
V
CC
= 300 V
V
= 300 V
I /I = 10
C B
CC
4
3
2
PW = 20 µs
PW = 20 µs
I /I = 10
C B
I /I = 5
C B
I /I = 5
C B
1
0
T = 125°C
T = 25°C
J
J
200
0
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
4
4
4
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 14. Resistive Switch Time, toff
Figure 13. Resistive Switch Time, ton
5
4
3
2
4
3
2
I
= I
Bon Boff
= 15 V
I
= I
Bon Boff
= 15 V
I /I = 5
C B
V
CC
V
CC
V = 300 V
Z
V = 300 V
Z
L = 200 µH
C
L = 200 µH
C
1
0
1
0
T = 125°C
J
T = 125°C
J
T = 25°C
J
T = 25°C
J
0
1
2
3
4
0
1
2
3
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 16. Inductive Storage Time,
Figure 15. Inductive Storage Time,
tsi @ IC/IB = 5
t
si @ IC/IB = 10
600
500
400
300
200
400
300
200
I
= I
Bon Boff
= 15 V
T = 125°C
J
I
= I
Boff Bon
= 15 V
V
CC
T = 25°C
J
V
CC
V = 300 V
Z
V = 300 V
Z
L = 200 µH
C
t
c
L = 200 µH
C
100
0
100
0
T = 125°C
J
T = 25°C
J
t
fi
0
1
2
3
0
1
2
3
4
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 17. Inductive Switching,
tc & tfi @ IC/IB = 5
Figure 18. Inductive Switching,
tfi @ IC/IB = 10
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6
BUL45D2
TYPICAL SWITCHING CHARACTERISTICS
1500
1000
5
I
= I
Bon Boff
= 15 V
T = 125°C
T = 25°C
J
I
= I
Boff Bon
= 15 V
T = 125°C
T = 25°C
J
J
J
V
CC
V
CC
V = 300 V
Z
V = 300 V
Z
I = 1 A
C
L = 200 µH
C
L = 200 µH
C
4
500
3
2
I = 2 A
C
0
0
1
2
3
4
0
5
10
15
20
I , COLLECTOR CURRENT (AMPS)
C
h
FE
, FORCED GAIN
Figure 19. Inductive Switching,
tc @ IC/IB = 10
Figure 20. Inductive Storage Time
450
350
250
1400
1200
1000
800
I
= I
Boff Bon
= 15 V
T = 125°C
T = 25°C
J
I
= I
Bon Boff
= 15 V
T = 125°C
T = 25°C
J
J
J
V
CC
V
CC
V = 300 V
Z
V = 300 V
Z
I = 1 A
C
L = 200 µH
C
L = 200 µH
C
I = 2 A
C
600
400
150
50
200
0
I = 2 A
C
I = 1 A
C
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
h , FORCED GAIN
FE
12
14
16
18
20
h
FE
, FORCED GAIN
Figure 21. Inductive Fall Time
Figure 22. Inductive Crossover Time
3000
2000
360
340
I = I
B1 B2
I
= I
Bon Boff
= 15 V
V
dI/dt = 10 A/µs
T = 25°C
C
CC
V = 300 V
Z
L = 200 µH
C
I = 50 mA
B
I = 100 mA
B
1000
320
300
I = 200 mA
B
I = 500 mA
B
I = 1 A
B
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
I , COLLECTOR CURRENT (AMPS)
C
I , FORWARD CURRENT (AMP)
F
Figure 23. Inductive Storage Time, tsi
Figure 24. Forward Recovery Time tfr
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BUL45D2
TYPICAL SWITCHING CHARACTERISTICS
10
V
CE
9
I
C
90% I
C
dyn 1 µs
8
7
6
t
fi
t
si
dyn 3 µs
10% I
C
0 V
V
10% V
clamp
clamp
5
4
3
2
t
c
90% I
B
I
B
90% I
B1
1 µs
I
B
1
0
3 µs
0
1
2
3
4
5
6
8
7
TIME
TIME
Figure 25. Dynamic Saturation
Voltage Measurements
Figure 26. Inductive Switching Measurements
V
FRM
V
(1.1 V unless
F
otherwise specified)
FR
V
F
V
F
t
fr
0.1 V
F
0
I
F
10% I
F
0
2
4
6
8
10
Figure 27. tfr Measurements
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BUL45D2
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
I PEAK
C
100 µF
1 µF
100 Ω
3 W
MTP8P10
150 Ω
3 W
V
CE
PEAK
V
CE
MTP8P10
R
B1
MPF930
I 1
B
MUR105
MJE210
MPF930
I
+10 V
out
I
B
A
I 2
B
50 Ω
R
B2
COMMON
MTP12N10
150 Ω
3 W
V
(BR)CEO(sus)
L = 10 mH
Inductive Switching
L = 200 µH
RBSOA
L = 500 µH
500 µF
R
B2
CC
= ∞
= 20 Volts
= 100 mA
R
= 0
= 15 Volts
selected for
R
= 0
= 15 Volts
selected for
B2
B2
V
V
CC
V
CC
1 µF
I
R
B1
desired I
R
B1
C(pk)
-V
off
desired I
B1
B1
TYPICAL CHARACTERISTICS
100
6
T
≤ 125°C
C
5
GAIN ≥ 5
L = 2 mH
1 µs
10
1
C
10 µs
1 ms
4
3
2
5 ms
DC
-5 V
0.1
1
0
0 V
-1.5 V
600
0.01
10
100
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
200
300
400
500
700
800
V
CE
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 28. Forward Bias Safe Operating Area
Figure 29. Reverse Bias Safe Operating Area
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BUL45D2
TYPICAL CHARACTERISTICS
1
0.8
0.6
SECOND BREAKDOWN
DERATING
THERMAL DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
Figure 30. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
T
may be calculated from the data in Figure 31. At any
J(pk)
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 29). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
breakdown. Safe operating area curves indicate I –V
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 28 is
based on T = 25°C; T
is variable depending on power
C
J(pk)
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T > 25°C. Second
C
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 28 may be found at any case temperature by using the
appropriate curve on Figure 30.
TYPICAL THERMAL RESPONSE
1
0.5
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
θ
JC
= 2.5°C/W MAX
θ
JC
JC
0.1
0.05
θ
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
t
1
1
t
2
SINGLE PULSE
T
- T = P
C
R (t)
θ
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.1
1
10
100
1000
t, TIME (ms)
Figure 31. Typical Thermal Response (ZθJC(t)) for BUL45D2
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10
BUL45D2
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
K
Q
Z
A
B
C
D
F
G
H
J
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
2
3
U
H
K
L
L
R
J
N
Q
R
S
T
U
V
Z
V
G
D
N
0.080
2.04
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11
BUL45D2
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