BUY47CECC [ETC]
NPN ; NPN\n
ETC 
BUY47
BUY48
MECHANICAL DATA
Dimensions in mm (inches)
HIGH VOLTAGE, HIGH CURRENT
SILICON EXPITAXIAL PLANAR
NPN TRANSISTOR
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
0.89
(0.035)
max.
12.70
(0.500)
min.
APPLICATIONS
0.41 (0.016)
0.53 (0.021)
dia.
Intended for High Voltage, High Current,
Switching Applications up to 7A.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO–39 PACKAGE (TO-205AD)
Underside View
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
BUY47
150V
BUY48
200V
V
V
V
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
(I = 0)
E
CBO
CEO
EBO
120V
170V
(I = 0)
B
6V
7A
(I = 0)
C
I
I
C
10A
1W
10W
Peak Collector Current (repetitive)
Total Power Dissipation
CM
P
@T
= 25°C
= 25°C
tot
amb
@T
case
–65 to +200°C
200°C
T
T
Storage Temperature Range
STG
Maximum Operating Junction Temperature
Thermal Resistance Junction - Air
J
175 °C/W
15°C/W
R
R
θJA
θJC
Thermal Resistance Junction - Case
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3088
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BUY47
BUY48
ELECTRICAL CHARACTERISTICS
(T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min. Typ. Max. Unit
V
= 80V
BUY47
10
µA
mA
µA
CB
I = 0
T = 125°C
1
E
C
I
Collector Cut-off Current
CBO
V
= 100V
BUY48
10
1
CB
I = 0
T = 125°C
mA
E
C
I = 1mA
BUY47
BUY48
BUY47
BUY48
150
200
120
170
6
C
V
Collector – Base Breakdown Voltage
V
(BR)CBO*
I = 0
E
I = 20mA
C
V
V
Collector – Emitter Sustaining Voltage
Emitter – Base Voltage
V
V
CEO(sus)*
I = 0
B
I = 1mA
I = 0
C
EBO*
E
I = 0.5A
I = 50mA
0.05
0.8
C
B
V
V
Collector – Emitter Saturation Voltage I = 2A
I = 0.2A
0.45
1
V
V
CE(sat)*
BE(sat)*
C
B
I = 5A
I = 0.5A
B
C
I = 0.5A
I = 50mA
B
C
Base – Emitter Saturation Voltage
I = 2A
I = 0.2A
1.1
1.5
C
B
I = 5A
I = 0.5A
B
C
I = 50mA
V
V
V
V
V
V
= 5V
= 5V
= 5V
= 5V
= 10V
= 50V
130
150
130
45
C
CE
CE
CE
CE
CE
CB
I = 0.5A
40
40
15
C
h
DC Current Gain
—
FE*
I = 2A
C
I = 5A
C
f
Transition Frequency
I = 100mA
90
MHz
pF
T
C
I = 0
E
C
Collector – Base Capacitance
45
80
CBO
f = 1MHz
t
t
Turn–On Time
I = 5A
V
= 40V
1
2
on
C
CC
µs
Fall Time
I
= –I = 0.5A
off
B1 B2
NOTES
* Pulse Test: t = 300µs, δ = 1.5%
p
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3088
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
相关型号：
BUY47LEADFREE
Small Signal Bipolar Transistor, 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CENTRAL
BUY48LEADFREE
Small Signal Bipolar Transistor, 170V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明