BUZ905D [ETC]
TRANSISTOR AUDIO NF LEISTUNGS MOSFET ; 晶体管音频NF LEISTUNGS MOSFET\n
| 型号： | BUZ905D |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR AUDIO NF LEISTUNGS MOSFET
|
| 文件： | 总4页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ905DP
BUZ906DP
MAGNA
TEC
MECHANICAL DATA
Dimensions in mm
P–CHANNEL
POWER MOSFET
20.0
5.0
3.3 Dia.
POWER MOSFETS FOR
AUDIO APPLICATIONS
FEATURES
• HIGH SPEED SWITCHING
1
2
3
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
2.0
3.4
1.0
2.0
0.6
2.8
1.2
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
5.45 5.45
• N–CHANNEL ALSO AVAILABLE AS
BUZ900DP & BUZ901DP
TO–3PBL
Pin 1 – Gate
Pin 2 – Source
Case is Source
Pin 3 – Drain
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C unless otherwise stated)
BUZ905DP
BUZ906DP
case
V
V
Drain – Source Voltage
-160V
-200V
DSX
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
±14V
GSS
I
I
-16A
-16A
D
D(PK)
P
Total Power Dissipation
Storage Temperature Range
@ T
= 25°C
250W
D
stg
j
case
T
T
–55 to 150°C
150°C
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
R
0.5°C/W
θJC
Prelim. 2/95
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
BUZ905DP
BUZ906DP
MAGNA
TEC
STATIC CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
V
= 10V
BUZ905DP
-160
GS
BV
BV
Drain – Source Breakdown Voltage
V
DSX
I = -10mA
BUZ906DP
-200
±14
-0.1
D
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
V
V
V
= 0
I = ±100µA
V
GSS
DS
DS
GD
G
V
V
= -10V
= 0
I = -100mA
-1.5
-12
V
V
GS(OFF)
D
*
I = -16A
D
DS(SAT)
V
= -160V
DS
-10
BUZ905DP
= -200V
I
Drain – Source Cut–Off Current
Forward Transfer Admittance
V
V
= 10V
mA
S
DSX
GS
DS
V
DS
-10
4
BUZ906DP
I = -3A
yfs*
= -10V
1.4
D
DYNAMIC CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
C
C
C
Input Capacitance
1900
iss
V
= 10V
DS
Output Capacitance
900
60
pF
oss
rss
f = 1MHz
Reverse Transfer Capacitance
Turn–on Time
t
t
V
= 20V
150
110
on
off
DS
ns
Turn-off Time
I = 7A
D
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.
Derating Chart
300
250
200
150
100
50
0
0
25
50
75
100
125
150
T
— CASE TEMPERATURE (˚C)
C
Prelim. 2/95
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
BUZ905DP
BUZ906DP
MAGNA
TEC
Typical Output Characteristics
Typical Output Characteristics
-22
-20
-18
-16
-14
-12
-10
- 8
-22
-20
-18
-16
-14
-12
-10
- 8
T
= 25˚C
T = 75˚C
C
C
-7V
-6V
-7V
-6V
-5V
-5V
-4V
-4V
-3V
-6
-6
-3V
-4
-4
-2V
-1V
-2V
-1V
-2
-2
0
0
0
-1
-1
-10
-20
-30
-40
-50
-60
-70
-1000
-9
0
-10
-20
-30
-40
-50
-60
-70
V
— DRAIN – SOURCE VOLTAGE (V)
V
— DRAIN – SOURCE VOLTAGE (V)
DS
DS
Forward Bias Safe Operating Area
Transconductance
-100
-10
-1
100
10
1
V
= 20V
DS
T
= 25˚C
C
T
= 25˚C
= 75˚C
C
T
C
BUZ905D
BUZ906D
-0.1
0.1
-10
-100
0
2
4
6
8
10
I — DRAIN CURRENT (A)
D
12
14
16
V
— DRAIN – SOURCE VOLTAGE (V)
DS
Drain – Source Voltage
vs
Gate – Source Voltage
Typical Transfer Characteristics
-16
-14
-12
-10
-8
-22
-20
-18
-16
-14
-12
-10
-8
T
= 25˚C
V
= -10V
C
DS
T
= 25˚C
C
T
= 75˚C
C
I
I
= -14A
D
T
= 100˚C
C
-6
= -9A
= -5A
D
-6
-4
I
I
-4
D
D
-2
-2
= -3A
-8
0
0
-2
-3
-4
-5
-6
-7
0
-1
-2
-3
V — GATE – SOURCE VOLTAGE (V)
GS
-4
-5
-6
-7
-8
-9
-10
-11
V
— GATE – SOURCE VOLTAGE (V)
GS
Prelim. 2/95
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
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