BYV72E-200/B [ETC]
DIODE ULTRA-FAST ; 二极管超快速\n
| 型号： | BYV72E-200/B |
| 厂家： | 
ETC |
| 描述： | DIODE ULTRA-FAST
|
| 文件： | 总6页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72E series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high efficiency
rugged dual rectifier diodes in a
plastic envelope, featuring low
forward voltage drop, ultra-fast
recovery times and soft recovery
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and ESD capability. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
SYMBOL
PARAMETER
MAX. MAX. MAX. UNIT
BYV72E-
100
100
150
150
200
200
VRRM
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode
V
VF
IO(AV)
0.90
30
0.90
30
0.90
30
V
A
trr
IRRM
28
0.2
28
0.2
28
0.2
ns
A
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
Anode 1 (a)
tab
a1
a2
2
Cathode (k)
Anode 2 (a)
3
k
tab Cathode (k)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
100
100
100
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Repetitive peak reverse voltage
-
-
-
V
V
V
Crest working reverse voltage
Continuous reverse voltage1
IO(AV)
Output current (both diodes
conducting)2
square wave
-
-
30
27
A
A
δ = 0.5; Tmb ≤ 104 ˚C
sinusoidal; a = 1.57;
Tmb ≤ 107 ˚C
IO(RMS)
IFRM
RMS forward current
-
-
43
30
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Tmb ≤ 104 ˚C
IFSM
Non-repetitive peak forward
current per diode
t = 10 ms
-
-
150
160
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
I2t
IRRM
I2t for fusing
t = 10 ms
-
-
112
0.2
A2s
A
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
IRSM
Non-repetitive peak reverse
current per diode
tp = 100 µs
-
0.2
A
Tstg
Tj
Storage temperature
-40
-
150
150
˚C
˚C
Operating junction temperature
1 Tmb ≤ 144˚C for thermal stability.
2 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
November 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72E series
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction to per diode
-
-
-
-
-
45
2.4
1.4
-
K/W
K/W
K/W
mounting base
both diodes conducting
Thermal resistance junction to in free air
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage (per diode)
IF = 15 A; Tj = 150˚C
IF = 15 A
-
-
-
-
-
0.83
0.95
1.00
0.5
0.90
1.05
1.20
1
V
V
IF = 30 A
V
IR
Reverse current (per diode)
VR = VRWM; Tj = 100 ˚C
VR = VRWM
mA
µA
10
100
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Qs
trr1
trr2
Vfr
Reverse recovery charge (per
diode)
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
-
-
-
6
20
13
1
15
28
22
-
nC
ns
ns
V
Reverse recovery time (per
diode)
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
Reverse recovery time (per
diode)
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs
diode)
November 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72E series
dI
0.5A
IF
I
F
F
dt
t
0A
rr
time
I
= 0.25A
rec
IR
Q
100%
10%
s
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
PF / W
I
Tmb(max) / C
D = 1.0
25
20
15
10
5
F
90
Vo = 0.7050 V
Rs = 0.0130 Ohms
102
0.5
114
126
0.2
0.1
time
V
F
t
p
t
p
I
D =
T
138
150
V
fr
t
T
V
F
0
0
5
10
IF(AV) / A
15
20
25
time
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Tmb(max) / C
a = 1.57
PF / W
R
20
15
10
5
102
114
1.9
2.2
D.U.T.
2.8
Voltage Pulse Source
4
126
Current
shunt
138
150
to ’scope
0
0
5
10
15
IF(AV) / A
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
November 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72E series
trr / ns
1000
Qs / nC
100
IF=20A
10A
5A
IF=20A
2A
100
10
1A
10
IF=1A
1.0
1
1
10
dIF/dt (A/us)
100
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Irrm / A
10
Zth (K/W)
10
IF=20A
1
1
IF=1A
0.1
0.1
P
t
p
D
t
0.01
0.01
10 us
10
100
1 ms
0.1
10 s
1
-dIF/dt (A/us)
tp / s
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
IF / A
50
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
max
1.0
0
0
0.5
1.5
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
November 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72E series
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
15.2
max
14
4.6
13.6
max
4.25
4.15
2 max
2
4.4
21
max
12.7
max
2.2 max
0.5
min
13.6
min
dimensions within
this zone are
uncontrolled
1
2
3
0.5
M
0.4
5.5
1.15
0.95
1.6
11
Fig.12. SOT93; pin 2 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
November 1994
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72E series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1994
6
Rev 1.100
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