BZT03-C8V2/A52R [ETC]
ZENER DIODE 3.0W 8.2V ; 稳压二极管8.2V 3.0W\n
| 型号： | BZT03-C8V2/A52R |
| 厂家： | 
ETC |
| 描述： | ZENER DIODE 3.0W 8.2V
|
| 文件： | 总9页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZT03 series
Voltage regulator diodes
1996 Jun 11
Product specification
Supersedes data of April 1992
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
construction. This package is
FEATURES
DESCRIPTION
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
• Glass passivated
Rugged glass SOD57 package, using
a high temperature alloyed
• High maximum operating
temperature
• Low leakage current
• Excellent stability
k
a
• Zener working voltage range:
7.5 to 270 V for 38 types
MAM204
• Transient suppressor stand-off
voltage range:
6.2 to 430 V for 45 types
Fig.1 Simplified outline (SOD57) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
3.25
1.30
UNIT
Ptot
total power dissipation
Ttp = 25 °C; lead length 10 mm; see Fig.2
−
−
W
T
amb = 45 °C; see Fig.2;
PCB mounted (see Fig.6)
W
W
W
W
PZRM
PZSM
PRSM
repetitive peak reverse power
dissipation
−
−
−
10
600
300
non-repetitive peak reverse
power dissipation
tp = 100 µs; square pulse;
Tj = 25 °C prior to surge; see Fig.3
non-repetitive peak reverse
power dissipation
10/1000 µs exponential pulse (see Fig.4);
Tj = 25 °C prior to surge
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
1996 Jun 11
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 0.5 A; see Fig.5
MAX.
UNIT
VF
1.2
V
Per type when used as voltage regulator diodes
Tj = 25 °C unless otherwise specified.
DIFFERENTIAL TEMPERATURE
TEST
REVERSE CURRENT
WORKING VOLTAGE
VZ (V) at IZ
TYPE
No.
RESISTANCE
COEFFICIENT CURRENT at REVERSE VOLTAGE
SUFFIX
rdif (Ω) at IZ
SZ (%/K) at IZ
IR (µA)
(1)
IZ (mA)
VR (V)
MIN.
NOM.
MAX.
TYP.
MAX.
MIN.
MAX.
MAX.
C7V5
C8V2
C9V1
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
C51
C56
C62
C68
C75
C82
C91
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
7.5
8.2
9.1
10
11
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
1
1
2
2
0.00
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
750
600
20
10
4
5.6
6.2
6.8
7.5
8.2
9.1
10
11
2
4
2
4
4
7
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
4
7
3
5
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
2
5
1
6
1
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
6
1
6
1
6
1
7
1
7
1
8
1
31
35
8
1
34
38
21
21
24
24
25
25
25
25
30
30
60
1
37
41
1
40
46
1
44
50
1
48
54
1
52
60
1
58
66
1
64
72
1
70
79
1
77
87
1
85
96
1
1996 Jun 11
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
DIFFERENTIAL TEMPERATURE
TEST
REVERSE CURRENT
WORKING VOLTAGE
VZ (V) at IZ
TYPE
No.
RESISTANCE
COEFFICIENT CURRENT at REVERSE VOLTAGE
SUFFIX
rdif (Ω) at IZ
SZ (%/K) at IZ
IR (µA)
(1)
IZ (mA)
VR (V)
MIN.
NOM.
100
110
120
130
150
160
180
200
220
240
270
MAX.
106
116
127
141
156
171
191
212
233
256
289
TYP.
60
MAX.
200
250
250
300
300
350
400
500
750
850
1000
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
MAX.
94
5
5
5
5
5
5
5
5
2
2
2
1
1
1
1
1
1
1
1
1
1
1
75
82
C100
C110
C120
C130
C150
C160
C180
C200
C220
C240
C270
104
80
114
124
138
153
168
188
208
228
251
80
91
110
130
150
180
200
350
400
450
100
110
120
130
150
160
180
200
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZT03-C100.
1996 Jun 11
4
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
Per type when used as transient suppressor diodes
Tj = 25 °C unless otherwise specified.
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
REVERSE
TEMPERATURE
BREAKDOWN
COEFFICIENT
VOLTAGE
TEST
CURRENT
CLAMPING
VOLTAGE
TYPE
NUMBER
V
(BR)R (V)
at Itest
at IRSM
(A)
note 1
SZ (%/K) at Itest
V(CL)R (V)
MAX.
IR (µA)
Itest
(mA)
at VR
(V)
MIN.
MIN.
MAX.
MAX.
BZT03-C7V5
BZT03-C8V2
BZT03-C9V1
BZT03-C10
BZT03-C11
BZT03-C12
BZT03-C13
BZT03-C15
BZT03-C16
BZT03-C18
BZT03-C20
BZT03-C22
BZT03-C24
BZT03-C27
BZT03-C30
BZT03-C33
BZT03-C36
BZT03-C39
BZT03-C43
BZT03-C47
BZT03-C51
BZT03-C56
BZT03-C62
BZT03-C68
BZT03-C75
BZT03-C82
BZT03-C91
BZT03-C100
BZT03-C110
BZT03-C120
BZT03-C130
BZT03-C150
BZT03-C160
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
0.00
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
11.3
12.3
13.3
14.8
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114.0
126
26.5
24.4
22.7
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
1500
1200
100
20
5
6.2
6.8
7.5
8.2
9.1
10
5
5
11
5
12
5
13
5
15
5
16
5
18
8.9
5
20
7.9
5
22
7.1
5
24
31
6.5
5
27
34
6.0
5
30
37
5.5
5
33
40
4.9
5
36
44
4.6
5
39
48
4.2
5
43
52
3.8
5
47
58
3.5
5
51
64
3.2
5
56
70
2.9
5
62
77
2.6
5
68
85
2.4
5
75
94
5
139
2.2
5
82
104
114
124
138
153
5
152
2.0
5
91
5
167
1.8
5
100
110
120
130
5
185
1.6
5
5
204
1.5
5
5
224
1.3
5
1996 Jun 11
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
TYPE
NUMBER
V(BR)R (V)
at Itest
at IRSM
(A)
note 1
SZ (%/K) at Itest
V(CL)R (V)
MAX.
IR (µA)
Itest
(mA)
at VR
(V)
MIN.
MIN.
MAX.
MAX.
168
188
208
228
251
280
310
340
370
400
440
480
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
5
2
2
2
2
2
2
2
2
2
2
249
276
305
336
380
419
459
498
537
603
655
707
1.2
5
5
5
5
5
5
5
5
5
5
5
5
150
160
180
200
220
240
270
300
330
360
390
430
BZT03-C180
BZT03-C200
BZT03-C220
BZT03-C240
BZT03-C270
BZT03-C300
BZT03-C330
BZT03-C360
BZT03-C390
BZT03-C430
BZT03-C470
BZT03-C510
1.1
1.0
0.9
0.8
0.72
0.65
0.60
0.56
0.50
0.45
0.42
Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
lead length = 10 mm
note 1
VALUE
46
UNIT
K/W
K/W
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Rth j-a
100
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.6.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 11
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
GRAPHICAL DATA
MBH534
MBH535
4
10
4
handbook, halfpage
handbook, halfpage
P
tot
P
(W)
ZSM
(W)
3
3
10
2
1
0
2
10
10
10
−2
−1
0
100
200
10
1
t (ms) 10
p
T (°C)
Solid line: tie-point temperature; lead length = 10 mm.
Tj = 25 °C prior to surge.
Dotted line: ambient temperature; PCB mounted as shown in Fig 6.
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.2 Maximum total power dissipation as a
function of temperature.
MBH536
I
3
handbook, halfpage
RSM
handbook, halfpage
(%)
I
F
100
90
(A)
2
50
1
0
10
t
t
1
0
1
2
V
(V)
t
MGD521
F
2
In accordance with “IEC 60-1, Section 8”.
t1 = 10 µs.
Tj = 25 °C.
t2 = 1000 µs.
Fig.4 Non-repetitivepeakreversecurrent
pulse definition.
Fig.5 Forward current as a function of forward
voltage; typical values.
1996 Jun 11
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
50
handbook, halfpage
25
7
50
2
3
MGA200
Dimensions in mm.
Fig.6 Device mounted on a printed-circuit board.
1996 Jun 11
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
PACKAGE OUTLINE
k
a
0.81
max
3.81
max
4.57
max
MBC880
28 min
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.7 SOD57.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 11
9
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