C2D05120 [ETC]

Silicon Carbide Schottky Diode; 碳化硅肖特基二极管
C2D05120
型号: C2D05120
厂家: ETC    ETC
描述:

Silicon Carbide Schottky Diode
碳化硅肖特基二极管

肖特基二极管
文件: 总5页 (文件大小:465K)
中文:  中文翻译
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C2D05ꢀ20–Silicon Carbide Schottky Diode  
Zero recovery® RectifieR  
VRRM=1200 V  
IF =5 A  
Qc =28 nC  
Features  
Package  
1200-Volt Schottky Rectifier  
Zero Reverse Recovery  
Zero Forward Recovery  
High-Frequency Operation  
Temperature-Independent Switching Behavior  
Extremely Fast Swtitching  
Positive Temperature Coefficient on VF  
TO-220-2  
Benefits  
Replace Bipolar with Unipolar Rectifiers  
Essentially No Switching Losses  
Higher Efficiency  
Reduction of Heat Sink Requirements  
Parallel Devices Without Thermal Runaway  
Applications  
Part Number  
Package  
Marking  
Switch Mode Power Supplies  
Power Factor Correction  
Motor Drives  
C2D05120A  
TO-220-2  
C2D05120  
High Voltage Multipliers  
Maximum Ratings  
Symbol  
Parameter  
Value Unit  
Test Conditions  
Note  
VRRM  
VRSM  
Repetitive Peak Reverse Voltage  
Surge Peak Reverse Voltage  
DC Blocking Voltage  
1200  
1200  
1200  
V
V
VDC  
V
5
10  
TC=160˚C, DC  
TC=125˚C, DC  
IF(AVG)  
IF(PEAK)  
IFRM  
Average Forward Current  
A
Peak Forward Current  
15  
30  
A
TC=125˚C, TREP<1mS, Duty=0.5  
Repetitive Peak Forward Surge Current  
Non-Repetitive Peak Forward Surge Current  
Power Dissipation  
A
TC=25˚C, tP=8.3 ms, Half Sine Wave  
TC=25˚C, tP=10 µs, Pulse  
IFSM  
100  
A
136  
45  
TC=25˚C  
TC=125˚C  
Ptot  
W
˚C  
-55 to  
+175  
TJ , Tstg  
Operating Junction and Storage Temperature  
Subject to change without notice.  
www.cree.com/power  
Electrical Characteristics  
Symbol  
Parameter  
Forward Voltage  
Typ.  
Max.  
Unit  
V
Test Conditions  
IF = 5 A TJ=25°C  
Note  
1.6  
2.6  
1.8  
3.0  
VF  
IF = 5 A TJ=175°C  
50  
100  
200  
1000  
VR = 1200 V TJ=25°C  
VR = 1200 V TJ=175°C  
IR  
Reverse Current  
μA  
VR = 1200 V, IF = 5 A  
di/dt = 500 A/μs  
TJ = 25°C  
QC  
C
Total Capacitive Charge  
28  
nC  
455  
45  
33  
VR = 0 V, TJ = 25°C, f = 1 MHz  
VR = 200 V, TJ = 25˚C, f = 1 MHz  
VR = 400 V, TJ = 25˚C, f = 1 MHz  
Total Capacitance  
pF  
Note:  
1. This is a majority carrier diode, so there is no reverse recovery charge.  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Unit  
Test Conditions  
Note  
Thermal Resistance from Junction  
to Case  
RθJC  
1.1  
°C/W  
Typical Performance  
200  
180  
160  
140  
120  
100  
80  
10  
9
TJ = 25°C  
TJ = 75°C  
8
TJ = 125°C  
TJ = 175°C  
7
6
5
4
3
2
1
0
TJ = 25°C  
TJ = 75°C  
TJ = 125°C  
TJ = 175°C  
60  
40  
20  
0
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
0
500  
1000  
1500  
VF Forward Voltage (V)  
VR Reverse Voltage (V)  
Figure 1. Forward Characteristics  
Figure 2. Reverse Characteristics  
2
C2D05120 Rev. -  
Typical Performance  
20  
400  
350  
300  
250  
200  
150  
100  
50  
15  
10  
5
0
0
25  
50  
75  
100  
125  
150  
175  
200  
1
10  
100  
1000  
VR Reverse Voltage (V)  
TC Case Temperature (°C)  
Figure 3. Current Derating  
Figure 4. Capacitance vs. Reverse Voltage  
1.00E+01  
1.00E+00  
1.00E-01  
1.00E-02  
1.00E-03  
1.00E-07  
1.00E-06  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
1.00E-01  
1.00E+00  
time [s]  
Figure 5. Transient Thermal Impedance  
C2D05120 Rev. -  
Package Dimensions  
Package TO-220-2  
Inches  
Millimeters  
Min  
POS  
Min  
.381  
.235  
.100  
.223  
.590  
.143  
Max  
.410  
.255  
.120  
.337  
.615  
.153  
1.147  
.550  
Max  
10.414  
6.477  
3.048  
8.560  
15.621  
3.886  
29.134  
13.970  
A
B
C
D
E
9.677  
5.969  
2.540  
5.664  
14.986  
3.632  
28.067  
12.700  
P
A
F
Q
J
C
B
X
F
D
S
T
G
H
J
1.105  
.500  
E
H
Y
1 2  
R 0.197  
R 0.197  
G
U
L
.025  
.045  
.195  
.165  
.048  
3°  
.036  
.055  
.205  
.185  
.054  
6°  
.635  
1.143  
4.953  
4.191  
1.219  
3°  
.914  
1.397  
5.207  
4.699  
1.372  
6°  
Z
M
N
P
V
Q
S
T
L
W
M
N
3°  
6°  
3°  
6°  
U
V
W
X
Y
3°  
6°  
3°  
6°  
.094  
.014  
3°  
.110  
.025  
5.5°  
.410  
.150  
2.388  
.356  
3°  
2.794  
.635  
5.5°  
.385  
.130  
9.779  
3.302  
10.414  
3.810  
z
NOTE:  
1. Dimension L, M, W apply for Solder Dip  
Finish  
C2D05120 Rev. -  
Recommended Solder Pad Layout  
TO-220-2  
Part Number  
Package  
Marking  
C2D05120A  
TO-220-2  
C2D05120  
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body  
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited  
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical  
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5451  
www.cree.com/power  
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the  
Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.  
5
C2D05120 Rev. -  

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