C30616ECER-07-FC [ETC]
Optoelectronic ; 光电\n型号: | C30616ECER-07-FC |
厂家: | ETC |
描述: | Optoelectronic
|
文件: | 总6页 (文件大小:285K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
High-Speed InGaAs PIN
Photodiodes
Description
EVERYTHING
IN A
High-speed InGaAs photodiodes from
PerkinElmer Optoelectronics are
designed for use in OEM fiber optic
communications systems and high-
speed receiver applications including
trunk line, LAN, fiber-in-the-loop and
data communications. Ceramic
submount packages are available for
easy integration into high-speed
SONET, FDDI, or datalink receiver
modules, or as back-facet power
monitors in laser diode modules.
C30616, C30637, C30617, C30618
NEW
LIGHT.
Photodiodes are available in hermetic
TO-18 packages, or in connectorized
receptacle packages with industry
standard ST, FC or SC connectors.
These are designed for mating to either
single or multimode fibers. Photodiodes
are also available in a fibered package
with either single or multimode fiber
pigtail, which can be terminated with
either an ST, FC or SC connector.
Receptacled and fibered packages use
a ball-lens TO-18 package to maximize
coupling efficiency. All devices are
planar passivated and feature proven
high reliability mounting and contacting.
An MTTF of >109 hours (approximate-
ly 105 years) at 50oC has been
demonstrated with an extended high temperature burn-
in at 200oC for 168 hours (VR = 10V), ensuring an
MTTF > 107 hours at 50oC (E = 0.7eV). Finally, all
A
production devices are screened with a 16 hour, 200oC
burn-in (VR = 10V) and tested to meet responsivity,
spectral noise and dark current specifications.
Features
demonstrated to date from standard
production samples.
• 50, 75, 100, 350 µm diameters
• High responsivity at 1300 and 1550nm
• Low capacitance for high bandwidths (to 3.5GHz)
• Available in various package options
Quality and Reliability
PerkinElmer Optoelectronics is
committed to supplying the highest
quality product to our customers, and
we are certified to meet ISO-9001 and
operate to MIL-Q-9858A and AQAP-1
quality standards. Process control is
maintained through annual re-
Applications
• High-speed communications
• SONET/ATM, FDDI
• Datalinks & LANs
qualification of production units and
includes extensive electrical, thermal
and mechanical stress as well as an
extended lifetest. In addition, every
wafer lot is individually qualified to meet
responsivity, capacitance and dark
current specifications, and reliability is
• Fiber optic sensors
Performance Specifications (at V = V
typical), 22°C
R
OP
Parameter
C30616
Typ
C30637
Typ
Min
Max
Min
Max
Units
Operating Voltage
1
5
10
1
5
10
V
Breakdown Voltage
Active Diameter
25
100
50
25
100
75
V
µm
Responsivity at 1300 nm
Ceramic (D1)
Responsivity at 1550 nm
Ceramic (D1)
0.80
0.85
0.90
0.80
0.85
0.90
A/W
0.95
< 1.0
< 0.02
0.95
< 1.0
< 0.02
A/W
nA
pA/√Hz
Dark Current
2.0
0.15
2.0
0.15
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance at VR = VOP (typ)
Ceramic (D1)
0.35
0.07
3.5
0.55
0.5
0.40
0.07
3.5
0.60
0.5
pF
ns
GHz
Rise/Fall Time (10% to 90%)
Bandwidth (-3 dB, R = 50Ω)
L
Available Package Types
D1
D1
Maximum Ratings
Maximum Forward Current
Power Dissipation
Storage Temperature
Operating Temperature
10
10
mA
mW
°C
100
125
125
100
125
125
-60
-40
-60
-40
°C
Figure 1: Typical spectral responsivity vs wavelength.
Dotted line shows response in D2 package (silicon window)
Figure 2: Typical capacitance vs operating voltage.
Note 1: Ceramic submount.
Specifications (at V = V
typical), 22°C
C30617
R
OP
Parameter
C30618
Typ
Min
Typ
Max
Min
Max
Units
Operating Voltage
1
5
10
1
5
10
V
Breakdown Voltage
Active Diameter
25
100
100
25
80
350
V
µm
Responsivity at 1300 nm
Ceramic (D1)/TO-18 (D2)
Fiber (D6)/FC (D4)/ST (D3)/SC (D5)1
Responsivity at 1550 nm
Ceramic (D1)/TO-18 (D2)
Fiber (D6)/FC (D4)/ST (D3)/SC (D5)1
Dark Current
0.80
0.65
0.90
0.75
0.80
0.65
0.90
0.75
A/W
A/W
0.85
0.70
0.95
0.80
< 1.0
< 0.02
0.85
0.70
0.95
0.80
2.0
2.0
0.15
5.0
0.20
nA
pA/√Hz
Spectral Noise Current (10 kHz, 1.0 Hz)
0.02
Capacitance at V = V
(typ)
R
OP
(D1),(D6),(D3),(D5)
TO-18 (D2)
0.6
0.8
0.8
1.0
0.5
4.0
4.0
6.0
6.0
1.0
pF
Rise/Fall Time (10% to 90%)
0.07
3.5
0.5
ns
GHz
-
Bandwidth (-3 dB, R = 50 Ω)
0.75
L
Available Package Types
D1, D2, D3, D4, D5, D6,
D1, D2, D3, D4, D21
Maximum Ratings
Maximum Forward Current
Power Dissipation
Storage Temperature 2
Operating Temperature 2
10
100
125
125
10
100
125
125
mA
mW
°C
-60
-40
-60
-40
°C
Note 1. Coupled from 62.5 Fm, 0.28 NA graded index multi-mode fiber using 1300 nm SLED source.
Note 2. Maximum storage and operating temperature for connectorized and fibered devices is +85°C.
C30618
C30617
C30637
C30616
Figure 3: Typical dark current vs. voltage
Figure 4: Typical dark current vs. temperature
at V = -5V.
OP
Standard Packages
Figure 5:
Package D1: Ceramic Submount
Figure 6:
Package D2: TO-18 low profile
Figure 8:
Package D4: FC detector module
Figure 7:
Package D3: ST receptacle module
Figure 9:
Package D5: SC receptacle module Figure 10:
Package D6: Fibered
detector module
Standard Packages
Figure 11:
Termination D8: ST connector
Figure 12: Termination D9: FC connector
Figure 13: Termination D10: SC connector
Figure 14: Package D21: TO-18 ball-lens
package
Ordering Guide
C30 # # # L M M M - X X - N N
Fiber
Termination FC:
ST:
Connector
Connector
Connector
SC:
Fiber Type
(Core/cladding/jacket in µm, NA)
04:
07:
62.5/125/900,0.29
9/125/900,0.10
Package
Type
ST:
FC:
SC:
Receptacle
Receptacle
Receptacle
QC: Fibered -XX-NN
CER: Ceramic
Flat window, ceramic
Lens
Type
E:
B:
submount
Ball lens, TO-18, stand alone
or with fiber / connector
Chip Type
616, 637, 617, 618
Note: Specific package types available for each photodiode are listed in the
table of specifications.
For more information e-mail us at opto@perkinelmer.com or visit our web site at www.perkinelmer.com/opto
PerkinElmer Optoelectronics
22001 Dumberry Road
Vaudreuil (QC) Canada
J7V 8P7
All values are nominal; specifications subject to change without notice.
Phone: (450) 424-3300
Fax: (450) 424-3411
©2000 PerkinElmer, Inc.
All rights reserved.
0400
is a registered trademark of PerkinElmer, Inc.
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