CDT100GK22 [ETC]
Thyristor-Diode Modules, Diode-Thyristor Modules; 晶闸管，二极管模块，二极管，晶闸管模块
| 型号： | CDT100GK22 |
| 厂家： | 
ETC |
| 描述： | Thyristor-Diode Modules, Diode-Thyristor Modules |
| 文件： | 总4页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTD100, CDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=300A; TVJ=25oC
15
mA
V
IRRM, IDRM
VT, VF
VTO
1.74
0.85
3.2
For power-loss calculations only (TVJ=TVJM)
V
m
rT
VD=6V;
VD=6V;
TVJ=25oC
TVJ=-40oC
1.5
1.6
V
VGT
IGT
TVJ=25oC
100
200
mA
TVJ=-40oC
TVJ=TVJM;
TVJ=TVJM;
VD=2/3VDRM
VD=2/3VDRM
0.25
10
V
VGD
IGD
mA
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
IL
IH
200
150
2
mA
mA
us
tgd
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
typ.
185
us
tq
TVJ=TVJM; IT, IF=50A; -di/dt=6A/us
170
45
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.22
0.11
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.42
0.21
Creeping distance on surface
Creepage distance in air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* DC motor control
* Space and weight savings
* Softstart AC motor controller
* Light, heat and temperature
control
* Simple mounting with two screws
* Improved temperature and power
cycling
* Planar passivated chips
* Isolation voltage 3600 V~
* UL registered, E 72873
* Gate-cathode twin pins for version 1
* Reduced protection circuits
DEECorp.
CTD100, CDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
10
1: IGT, TVJ = 125oC
2: IGT, TVJ
3: IGT, TVJ = -40oC
=
25oC
V
VG
3
2
6
1
5
1
4
4: PGAV = 0.5 W
5: PGM 5 W
6: PGM = 10 W
=
IGD, TVJ = 125oC
0.1
100
101
102
103
IG
104
mA
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
1000
TVJ = 25oC
s
tgd
typ.
Limit
100
10
3 x CTD/CDT100
1
10
mA
100
1000
IG
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
DEECorp.
CTD100, CDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x CTD/CDT100
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
0.22
0.23
0.25
0.27
0.28
180oC
120oC
60oC
30oC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.0066
0.0678
0.1456
0.0019
0.0477
0.344
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
0.42
0.43
0.45
0.47
0.48
180oC
120oC
60oC
30oC
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0066
0.0678
0.1456
0.2
0.0019
0.0477
0.344
1.32
DEECorp.
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