CMLT3946 [ETC]
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 200MA I(C) | SOT-363VAR ; 晶体管| BJT | PAIR |辅食| 40V V（ BR ） CEO | 200MA I（C ） | SOT- 363VAR\n
| 型号： | CMLT3946 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 200MA I(C) | SOT-363VAR
|
| 文件： | 总2页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMLT3904 NPN
CMLT3906 PNP
Central
Semiconductor Corp.
CMLT3946 NPN/PNP
FEATURES:
DUAL SMALL SIGNAL
• SPACE SAVING
SWITCHING TRANSISTOR
• TWO NPN OR TWO PNP TRANSISTORS IN
A SINGLE PACKAGE
• COMPLEMENTARY, ONE NPN AND ONE
PNP TRANSISTOR IN A SINGLE PACKAGE
Marking Codes:
CMLT3904
CMLT3906
CMLT3946
L04
L06
L46
SOT-563
DESCRIPTION:
The Central Semiconductor CMLT3904 (two single NPN), CMLT3906 (two single PNP), and CMLT3946
(one each NPN and PNP complementary) are combinations of transistors in a space saving SOT-563
package, designed for small signal general purpose amplifier and switching applications.
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
NPN
PNP
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
60
40
V
CBO
CEO
EBO
V
V
40
40
V
6.0
5.0
V
I
200
350
mA
mW
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
stg
-65 to +150
357
°C
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
NPN
PNP
SYMBOL
CEV
BL
TEST CONDITIONS
MIN
MAX
MIN
MAX UNIT
I
I
V
V
=30V, V =3.0V
50
50
nA
nA
V
CE
EB
=30V, V =3.0V
50
CE
EB
BV
BV
BV
I =10µA
60
40
6.0
40
40
5.0
CBO
CEO
C
I =1.0mA
V
C
I =10µA
V
EBO
E
V
V
V
V
I =10mA, I =1.0mA
0.20
0.30
0.85
0.95
0.25
0.40
0.85
0.95
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =50mA, I =5.0mA
V
C
B
I =10mA, I =1.0mA
0.65
0.65
V
C
B
I =50mA, I =5.0mA
V
C
B
h
h
h
h
h
V
=1.0V, I =0.1mA
40
70
60
80
CE
CE
CE
CE
CE
C
V
V
V
V
=1.0V, I =1.0mA
FE
C
=1.0V, I =10mA
100
60
30
300
100
60
300
FE
C
=1.0V, I =50mA
FE
C
=1.0V, I =100mA
30
FE
C
R0 ( 11-February 2002)
CMLT3904 NPN
CMLT3906 PNP
TM
Central
CMLT3946 NPN/PNP
Semiconductor Corp.
DUAL SMALL SIGNAL
SWITCHING TRANSISTOR
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX UNIT
f
V
V
V
V
V
V
V
V
=20V, I =10mA, f=100MHz
300
250
MHz
T
CE
CB
BE
CE
CE
CE
CE
CE
C
C
C
=5.0V, I =0, f=1.0MHz
4.0
8.0
10
8.0
400
40
4.5
10
pF
pF
kΩ
ob
ib
E
=0.5V, I =0, f=1.0MHz
C
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
1.0
0.5
100
1.0
2.0
0.1
100
3.0
12
ie
C
-4
=10V, I =1.0mA, f=1.0kHz
10
x10
re
fe
C
=10V, I =1.0mA, f=1.0kHz
400
60
C
=10V, I =1.0mA, f=1.0kHz
µmhos
oe
C
NF
=5.0V, I =100µA, R =1.0kΩ
C S
f=10Hz to 15.7kHz
5.0
35
35
200
50
4.0
35
dB
ns
ns
ns
ns
t
t
t
t
V
V
V
V
=3.0V, V =0.5V, I =10mA, I =1.0mA
d
r
s
f
CC
CC
CC
CC
BE B1
C
C
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
35
=3.0V, I =10mA, I =I =1.0mA
B1 B2
225
75
C
C
=3.0V, I =10mA, I =I =1.0mA
B1 B2
SOT-563 - MECHANICAL OUTLINE
D
E
E
A
6
5
4
B
G
F
1
2
3
C
H
R0
LEAD CODE
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
CMLT3904
Marking Codes: L04
CMLT3946
Marking Codes: L46
CMLT3906
Marking Codes: L06
R0 ( 11-February 2002)
相关型号：
CMLT3946EBK
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PICOMINI-6
CENTRAL
CMLT3946EGTR
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, PICOMINI-6
CENTRAL
CMLT3946ETR
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PICOMINI-6
CENTRAL
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