CSB649AC [ETC]
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 ; 晶体管| BJT | PNP | 160V V( BR ) CEO | 1.5AI ( C) | TO- 126\n型号: | CSB649AC |
厂家: | ETC |
描述: | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
|
文件: | 总3页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
CSB649, CSB649A
CSD669, CSD669A
TO-126 (SOT-32) Plastic Package
CSB649, 649A
CSD669, 669A
PNP PLASTIC POWER TRANSISTORS
NPN PLASTIC POWER TRANSISTORS
Low frequency Power Amplifier
PIN
1. E
2. C
3. B
1
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
6 4 9
6 6 9
max. 180
max. 120
max.
6 4 9 A
6 6 9 A
180 V
160 V
A
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
V
V
CBO
CEO
I
1.5
20
C
Total power dissipation up to T = 25
C
P
T
max.
max.
W
C
C
j
Junction temperature
150
C
Collector-emitter saturation voltage
I
C
= 0.5 A; I = 50 mA
V
CEsat
max.
1.0
V
B
D.C. current gain
= 150 mA; V
I
= 5 V
h
FE
min.
max. 320
60
60
200
C
CE
RATINGS (at T =25 C unless otherwise specified)
A
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
V
V
max. 180
max. 120
180 V
160 V
CBO
CEO
Continental Device India Limited
Data Sheet
Page 1 of 3
CSB649, CSB649A
CSD669, CSD669A
6 4 9
6 6 9
6
4
9
A
6 6 9 A
Emitter-base voltage (open collector)
Collector current
Collector current (peak)
V
max.
max.
max.
max.
max.
max.
5.0
1.5
3.0
1.0
20
V
A
mA
W
W
ÀC
ÀC
EBO
I
I
C
CP
Total power dissipation up to T = 25
C
C
P
P
T
T
A
C
C
j
Total power dissipation up to T = 25
C
Junction temperature
Storage temperature
150
65 to +150
stg
CHARACTERISTICS
T
= 25 C unless otherwise specified
amb
6 4 9
6 6 9
6 4 9 A
6 6 9 A
Collector cutoff current
= 0; V = 160 V
I
I
max.
10
øA
E
CB
CBO
Breakdown voltages
I
I
I
= 10 mA; I = 0
V
V
V
min. 120
min. 180
min.
160 V
180 V
V
C
C
E
B
CEO
CBO
EBO
= 1 mA; I = 0
E
= 1 mA; I = 0
5.0
1.0
1.5
C
Saturation voltage
= 500 mA; I = 50 mA
I
V *
CEsat
max.
max.
V
V
C
B
Base-emitter voltage
I
= 150 mA; V
= 5 V
= 5 V
V
BE(on)
*
C
CE
D.C. current gain
(1)
I
= 150 mA; V
h
h
*
min.
60
60
200
C
CE
FE
max. 320
I
= 500 mA; V
= 5 V
= 5 V
min.
30
C
CE
FE
Transition frequency
I
= 150 mA; V
f
T
typ.
140
MHz
C
CE
Output capacitance
V
= 10 V; I = 0; f = 1 MHz PNP
E
C
ob
C
ob
typ.
typ.
27
14
pF
pF
CB
NPN
(1)
*
-
h
classification:
A
Non-A
B 60 - 120, C 100 - 200, D 160
FE
320
B 60 - 120, C 100 - 200
* Pulse test
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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