CSC2690AO [ETC]
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.2A I(C) | TO-126 ; 晶体管| BJT | NPN | 160V V（ BR ） CEO | 1.2AI （ C） | TO- 126\n
| 型号： | CSC2690AO |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.2A I(C) | TO-126
|
| 文件： | 总3页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
CSC2690, CSC2690A
TO-126 (SOT-32) Plastic Package
CSC2690, 2690A
NPN PLASTIC POWER TRANSISTORS
Complementary CSA1220, 1220A
Audio frequency, High Frequency and Power Amplifier
PIN
1. E
2. C
3. B
1
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
2690
2690A
160 V
160 V
A
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
V
V
max. 120
max. 120
max.
CBO
CEO
I
1.2
20
C
Total power dissipation up to T = 25°C
P
max.
W
C
tot
Junction temperature
T
j
max.
150
°C
Collector-emitter saturation voltage
I
C
= 1A; I = 0.2 A
V
CEsat
max.
0.7
V
B
D.C. current gain
I
C
= 0.3 A; V
= 5 V
h
FE
min.
60
CE
max.
320
RATINGS (at T =25°C unless otherwise specified)
A
Limiting values
2690
max. 120
max. 120
2690A
160 V
160 V
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
V
V
CBO
CEO
Continental Device India Limited
Data Sheet
Page 1 of 3
CSC2690, CSC2690A
Emitter-base voltage (open collector)
Collector current (DC)
Collector current (Pulse) (1)
Base current (DC)
V
max.
max.
max.
max.
max.
max.
max.
5.0
1.2
2.5
0.3
1.2
20
V
A
A
A
W
W
ºC
EBO
I
I
I
C
C
B
Total power dissipation up to T = 25°C
P
P
A
tot
tot
Total power dissipation up to T = 25°C
C
Junction temperature
T
j
150
Storage temperature
T
–65 to +150 ºC
stg
CHARACTERISTICS
T
= 25°C unless otherwise specified
amb
2690
2690A
Collector cutoff current
= 0; V = 120V
I
I
I
max.
max.
1.0
1.0
µA
µA
160 V
E
CB
Emitter cut-off current
= 0; V = 3V
CBO
EBO
I
C
EB
Breakdown voltages
I
I
I
= 1 mA; I = 0
V
V
V
min. 120
min. 120
min.
C
C
E
B
CEO
CBO
EBO
= 1 mA; I = 0
160 V
V
E
= 1 mA; I = 0
5.0
C
Saturation voltages
= 1 A; I = 0.2 A
I
V
V
*
*
max.
max.
0.7
1.3
V
V
C
B
CEsat
BEsat
D.C. current gain
I
I
= 5 mA; V
CE
= 0.3 A; V = 5 V**
CE
= 5 V
h
h
*
FE
*
FE
min.
min.
max.
35
60
320
C
C
Output capacitance at f = 1MHz
= 0, V = 10V
I
C
o
typ.
typ.
19
pF
MHz
E
CB
Transition frequency
= 0.2 A; V
I
= 5 V
f
T
155
C
CE
* Pulse test: pulse width ≤ 350 µs; duty cycle ≤ 2%. Pulsed.
(1) P ≤ 10 ms, duty cycle ≤ 50%.
W
** h
classification: R: 60-120 O: 100-200 Y: 160-320
FE
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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