CSC4217D [ETC]

TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 ; 晶体管| BJT | NPN | 300V V( BR ) CEO | 200MA I(C ) | TO- 126\n
CSC4217D
型号: CSC4217D
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126
晶体管| BJT | NPN | 300V V( BR ) CEO | 200MA I(C ) | TO- 126\n

晶体 晶体管
文件: 总3页 (文件大小:28K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IS/ISO 9002  
Lic# QSC/L- 000019.2  
IS / IECQC 700000  
IS / IECQC 750100  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
CSC4217  
TO-126 (SOT-32) Plastic Package  
CSC4217  
NPN PLASTIC POWER TRANSISTOR  
Colour TV Output, Sound Output, B/ W TV Video Output and  
Sound Output Applications  
PIN
1. E
2. C
3. B
1
3
ALL DIMENSIONS IN MM  
ABSOLUTE MAXIMUM RATINGS  
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
Collector current  
V
V
max.  
max.  
max.  
max.  
max.  
300 V  
300 V  
200 mA  
10 W  
CBO  
CEO  
I
C
Total power dissipation up to T = 25°C  
P
C
C
Junction temperature  
T
j
150 °C  
Collector-emitter saturation voltage  
I
C
= 20 mA; I = 2 mA  
V
CEsat  
max.  
0.6 V  
B
D.C. current gain  
I
C
= 10 mA; V  
= 10 V  
h
FE  
D
min.  
60  
CE  
max.  
120  
RATINGS (at T =25°C unless otherwise specified)  
A
Limiting values  
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
Emitter-base voltage (open collector)  
Collector current  
V
V
V
max.  
max.  
max.  
max.  
300 V  
300 V  
6.0 V  
CBO  
CEO  
EBO  
I
200 mA  
C
Continental Device India Limited  
Data Sheet  
Page 1 of 3  
CSC4217  
Collector current (pulse)  
Total power dissipation up to T = 25°C  
I
P
P
T
T
max.  
max.  
max.  
max.  
400 mA  
1.5 W  
10 W  
CP  
A
C
C
Total power dissipation up to T = 25°C  
C
Junction temperature  
Storage temperature  
150 ºC  
j
–65 to +150 ºC  
stg  
CHARACTERISTICS  
T
= 25°C unless otherwise specified  
amb  
Collector cutoff current  
I
= 0; V = 200 V  
I
CBO  
max.  
max.  
0.1 µA  
0.1 µA  
E
CB  
Emitter cut-off current  
= 0; V = 5 V  
I
I
EBO  
C
EB  
Saturation voltages  
= 20 mA; I = 2 mA  
I
V
CEsat  
max.  
max.  
0.6 V  
1.0 V  
C
B
V
BEsat  
D.C. current gain  
= 10 mA; V  
I
= 10 V  
= 10 V  
h
FE  
D
min.  
max.  
60  
120  
C
CE  
Transition frequency  
= 10 mA; V  
I
f
T
typ.  
typ.  
70 MHz  
3.5 pF  
C
CE  
Output capacitance  
V
= 50 V; I = 0; f = 1 MHz  
C
ob  
CB  
E
Continental Device India Limited  
Data Sheet  
Page 2 of 3  
Notes  
Disclaimer  
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited  
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as  
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/  
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete  
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;  
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life  
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor  
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own  
risk and CDIL will not be responsible for any damages resulting from such sale(s).  
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.  
CDIL is a registered Trademark of  
Continental Device India Limited  
C-120 Naraina Industrial Area, New Delhi 110 028, India.  
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290  
e-mail sales@cdil.com  
www.cdil.com  
Continental Device India Limited  
Data Sheet  
Page 3 of 3  

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