CSC4217D [ETC]
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 ; 晶体管| BJT | NPN | 300V V( BR ) CEO | 200MA I(C ) | TO- 126\n型号: | CSC4217D |
厂家: | ETC |
描述: | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126
|
文件: | 总3页 (文件大小:28K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
CSC4217
TO-126 (SOT-32) Plastic Package
CSC4217
NPN PLASTIC POWER TRANSISTOR
Colour TV Output, Sound Output, B/ W TV Video Output and
Sound Output Applications
PIN
1. E
2. C
3. B
1
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
V
V
max.
max.
max.
max.
max.
300 V
300 V
200 mA
10 W
CBO
CEO
I
C
Total power dissipation up to T = 25°C
P
C
C
Junction temperature
T
j
150 °C
Collector-emitter saturation voltage
I
C
= 20 mA; I = 2 mA
V
CEsat
max.
0.6 V
B
D.C. current gain
I
C
= 10 mA; V
= 10 V
h
FE
D
min.
60
CE
max.
120
RATINGS (at T =25°C unless otherwise specified)
A
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
V
V
V
max.
max.
max.
max.
300 V
300 V
6.0 V
CBO
CEO
EBO
I
200 mA
C
Continental Device India Limited
Data Sheet
Page 1 of 3
CSC4217
Collector current (pulse)
Total power dissipation up to T = 25°C
I
P
P
T
T
max.
max.
max.
max.
400 mA
1.5 W
10 W
CP
A
C
C
Total power dissipation up to T = 25°C
C
Junction temperature
Storage temperature
150 ºC
j
–65 to +150 ºC
stg
CHARACTERISTICS
T
= 25°C unless otherwise specified
amb
Collector cutoff current
I
= 0; V = 200 V
I
CBO
max.
max.
0.1 µA
0.1 µA
E
CB
Emitter cut-off current
= 0; V = 5 V
I
I
EBO
C
EB
Saturation voltages
= 20 mA; I = 2 mA
I
V
CEsat
max.
max.
0.6 V
1.0 V
C
B
V
BEsat
D.C. current gain
= 10 mA; V
I
= 10 V
= 10 V
h
FE
D
min.
max.
60
120
C
CE
Transition frequency
= 10 mA; V
I
f
T
typ.
typ.
70 MHz
3.5 pF
C
CE
Output capacitance
V
= 50 V; I = 0; f = 1 MHz
C
ob
CB
E
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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