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CSD20030 [ETC]

ZERO RECOVERY RECTIFIER; ZERO恢复整流
CSD20030
型号: CSD20030
厂家: ETC    ETC
描述:

ZERO RECOVERY RECTIFIER
ZERO恢复整流

文件: 总4页 (文件大小:228K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

CSD20030D

Zero Recovery㈢ Rectifiers

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16 CREE

CSD20060

ZERO RECOVERY RECTIFIER

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31 ETC

CSD20060D

Zero Recovery㈢ Rectifiers

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50 CREE

CSD20120

RECTIFIER

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46 ETC

CSD20120D

RECTIFIER

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58 ETC

CSD20L45CT-A

Super Low Barrier High Voltage Power Rectifier

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1 CITC

CSD22202W15

P-Channel NexFET Power MOSFET

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49 TI

CSD22204W

采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET

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1 TI

CSD22204WT

采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YZF | 9 | -55 to 150

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1 TI

CSD22205L

采用 1.2mm x 1.2mm LGA 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET

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1 TI

CSD22205LT

采用 1.2mm x 1.2mm LGA 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YMG | 4 | -55 to 150

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1 TI

CSD22206W

采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、5.7mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET

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1 TI

CSD22206WT

采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、5.7mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YZF | 9 | -55 to 150

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1 TI

CSD23201W10

P-Channel NexFET™ Power MOSFET

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61 TI

CSD23201W10_16

P-Channel NexFET Power MOSFET

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0 TI

CSD23202W10

采用 1mm x 1mm WLP 封装、具有栅极 ESD 保护的单路、53mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET

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2 TI

CSD23202W10T

采用 1mm x 1mm WLP 封装、具有栅极 ESD 保护的单路、53mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET | YZB | 4 | -55 to 150

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1 TI

CSD23203W

采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、19.4mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET

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1 TI

CSD23203WT

采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、19.4mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YZC | 6 | -55 to 150

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1 TI

CSD23280F3

采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、116mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET

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1 TI