CSD20030 [ETC]
ZERO RECOVERY RECTIFIER; ZERO恢复整流型号: | CSD20030 |
厂家: | ETC |
描述: | ZERO RECOVERY RECTIFIER |
文件: | 总4页 (文件大小:228K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
CSD20030D
Zero Recovery㈢ RectifiersWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
16
CREE
CSD20060
ZERO RECOVERY RECTIFIERWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
31
ETC
CSD20060D
Zero Recovery㈢ RectifiersWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
50
CREE
CSD20120
RECTIFIERWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
46
ETC
CSD20120D
RECTIFIERWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
58
ETC
CSD20L45CT-A
Super Low Barrier High Voltage Power RectifierWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
CITC
CSD22202W15
P-Channel NexFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
49
TI
CSD22204W
采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
CSD22204WT
采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YZF | 9 | -55 to 150Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
CSD22205L
采用 1.2mm x 1.2mm LGA 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
CSD22205LT
采用 1.2mm x 1.2mm LGA 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YMG | 4 | -55 to 150Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
CSD22206W
采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、5.7mΩ、-8V、P 沟道 NexFET™ 功率 MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
CSD22206WT
采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、5.7mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YZF | 9 | -55 to 150Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
CSD23201W10
P-Channel NexFET⢠Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
61
TI
CSD23201W10_16
P-Channel NexFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
TI
CSD23202W10
采用 1mm x 1mm WLP 封装、具有栅极 ESD 保护的单路、53mΩ、-12V、P 沟道 NexFET™ 功率 MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
2
TI
CSD23202W10T
采用 1mm x 1mm WLP 封装、具有栅极 ESD 保护的单路、53mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET | YZB | 4 | -55 to 150Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
CSD23203W
采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、19.4mΩ、-8V、P 沟道 NexFET™ 功率 MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
CSD23203WT
采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、19.4mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YZC | 6 | -55 to 150Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
CSD23280F3
采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、116mΩ、-12V、P 沟道 NexFET™ 功率 MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
TI
©2020 ICPDF网 联系我们和版权申明