CSD288Y [ETC]

TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 3A I(C) | TO-220AB ; 晶体管| BJT | NPN | 55V V( BR ) CEO | 3A I(C ) | TO- 220AB\n
CSD288Y
型号: CSD288Y
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 3A I(C) | TO-220AB
晶体管| BJT | NPN | 55V V( BR ) CEO | 3A I(C ) | TO- 220AB\n

晶体 晶体管 放大器 局域网
文件: 总3页 (文件大小:26K)
中文:  中文翻译
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IS/ISO 9002  
Lic# QSC/L- 000019.2  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
TO-220 Plastic Package  
CSA614, CSD288  
CSA614  
CSD288  
PNP PLASTIC POWER TRANSISTOR  
NPN PLASTIC POWER TRANSISTOR  
Low frequency Power Amplifier and Power Regulator  
PIN CONFIGURATION  
1. BASE  
4
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
1
2
3
C
DIM MIN.  
MAX.  
E
B
F
A
B
C
D
E
14.42  
9.63  
3.56  
16.51  
10.67  
4.83  
0.90  
1.40  
3.88  
2.79  
3.43  
0.56  
14.73  
4.07  
2.92  
31.24  
1.15  
3.75  
2.29  
2.54  
1
2
3
F
G
H
J
K
L
M
N
O
12.70  
2.80  
2.03  
J
D
G
M
DEG 7  
ABSOLUTE MAXIMUM RATINGS  
614  
288  
80 V  
55 V  
A
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
Collector current  
V
V
max. 80  
max. 55  
max.  
CBO  
CEO  
I
3.0  
25  
C
Total power dissipation up to T = 25°C  
C
P
max.  
W
tot  
Junction temperature  
T
j
max.  
150  
°C  
Collector-emitter saturation voltage  
I
C
= 1 A; I = 0.1 A  
V
CEsat  
max. 0.5  
1.0 V  
B
D.C. current gain  
= 0.5 A; V  
I
= 5 V  
h
FE  
min.  
40  
C
CE  
max.  
240  
RATINGS (at T =25°C unless otherwise specified)  
A
Limiting values  
614  
max. 80  
max. 55  
max.  
288  
80 V  
55 V  
V
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
Emitter-base voltage (open collector)  
V
CBO  
V
CEO  
V
EBO  
5.0  
Continental Device India Limited  
Data Sheet  
Page 1 of 3  
CSA614, CSD288  
Collector current  
Total power dissipation up to T = 25°C  
C
Junction temperature  
Storage temperature  
I
P
T
T
max.  
max.  
max.  
3.0  
25  
150  
A
W
ºC  
C
tot  
j
–65 to +150 ºC  
stg  
CHARACTERISTICS  
T
amb  
= 25°C unless otherwise specified  
614  
288  
Collector cutoff current  
= 0; V = 50V  
I
I
CBO  
max.  
50  
µA  
E
CB  
Breakdown voltages  
= 10 mA; I = 0  
I
C
V
min.  
min.  
min.  
55  
80  
5.0  
V
V
V
B
CEO  
CBO  
EBO  
I
C
= 500 µA; I = 0  
V
V
E
I
E
= 500 µA; I = 0  
C
Saturation voltage  
= 1 A; I = 0.1 A  
I
C
V
CEsat  
max. 0.5  
1.0 V  
B
D.C. current gain  
= 0.5A; V = 5V**  
I
C
h
FE  
min.  
40  
CE  
max.  
240  
** h  
classification: R: 40-80 O: 70-140 Y: 120-240  
FE  
Continental Device India Limited  
Data Sheet  
Page 2 of 3  
Notes  
Disclaimer  
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited  
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as  
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/  
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete  
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;  
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life  
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor  
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own  
risk and CDIL will not be responsible for any damages resulting from such sale(s).  
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.  
CDIL is a registered Trademark of  
Continental Device India Limited  
C-120 Naraina Industrial Area, New Delhi 110 028, India.  
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290  
e-mail sales@cdil.com  
www.cdil.com  
Continental Device India Limited  
Data Sheet  
Page 3 of 3  

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