D44VH/D [ETC]

Complementary Silicon Power Transistors ; 互补硅功率晶体管\n


型号：	D44VH/D
厂家：	ETC
描述：	Complementary Silicon Power Transistors 互补硅功率晶体管\n 晶体晶体管
文件：	总4页 (文件大小：42K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ON Semiconductort

NPN

D44VH

Complementary Silicon Power

Transistors

PNP

D45VH

These complementary silicon power transistors are designed for

high–speed switching applications, such as switching regulators and

high frequency inverters. The devices are also well–suited for drivers

for high power switching circuits.

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 VOLTS

• Fast Switching —

t = 90 ns (Max)

• Key Parameters Specified @ 100_C

83 WATTS

• Low Collector–Emitter Saturation Voltage —

CE(sat)

= 1.0 V (Max) @ 8.0 A

• Complementary Pairs Simplify Circuit Designs

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Emitter Base Voltage

Symbol

Value

Unit

Vdc

Adc

CEO

CEV

100

7.0

CASE 221A–09

TO–220AB

Collector Current — Continuous

— Peak (1)

Total Power Dissipation @ T = 25_C

Watts

Derate above 25_C

0.67

W/_C

T , T

–55 to 150

Operating and Storage Junction

stg

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.5

Unit

_C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

62.5

275

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(2) Pulse Width v 6.0 ms, Duty Cycle v 50%.

NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 2

D44VH/D

D44VH D45VH

ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (2)

(I = 25 mAdc, I = 0)

—

Vdc

CEO(sus)

µAdc

Collector–Emitter Cutoff Current

CEV

(V = Rated V

, V

= 4.0 Vdc)

—

CEV BE(off)

(V = Rated V

, V

= 4.0 Vdc, T = 100_C)

100

CEV BE(off)

—

µAdc

Emitter Base Cutoff Current

(V = 7.0 Vdc, I = 0)

EBO

ON CHARACTERISTICS (2)

—

DC Current Gain

(I = 2.0 Adc, V = 1.0 Vdc)

—

(I = 4.0 Adc, V = 1.0 Vdc)

Vdc

Collector–Emitter Saturation Voltage

(I = 8.0 Adc, I = 0.4 Adc)

CE(sat)

D44VH10

D45VH10

D44VH10

D45VH10

—

0.4

1.0

0.8

1.5

(I = 8.0 Adc, I = 0.8 Adc)

(I = 15 Adc, I = 3.0 Adc, T = 100_C)

Vdc

Base–Emitter Saturation Voltage

(I = 8.0 Adc, I = 0.4 Adc)

BE(sat)

D44VH10

D45VH10

D44VH10

D45VH10

—

1.2

1.0

1.1

1.5

(I = 8.0 Adc, I = 0.8 Adc)

(I = 8.0 Adc, I = 0.4 Adc, T = 100_C)

(I = 8.0 Adc, I = 0.8 Adc, T = 100_C)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product

(I = 0.1 Adc, V = 10 Vdc, f = 20 MHz)

—

MHz

Output Capacitance

(V = 10 Vdc, I = 0, f = 1.0 MHz)

test

D44VH10

D45VH10

—

120

275

—

SWITCHING CHARACTERISTICS

Delay Time

—

250

700

Rise Time

Storage Time

Fall Time

(V = 20 Vdc, I = 8.0 Adc,

= I = 0.8 Adc)

(2) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

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D44VH D45VH

PACKAGE DIMENSIONS

TO–220AB

CASE 221A–09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEATING

PLANE

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

0.080

2.04

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D44VH D45VH

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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For additional information, please contact your local

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D44VH/D

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D44VH/D [ETC]

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