DBF4100R12KS421 [ETC]
IGBT Module ; IGBT模块\n
| 型号： | DBF4100R12KS421 |
| 厂家： | 
ETC |
| 描述： | IGBT Module
|
| 文件： | 总7页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Technische Information / technical information
IGBT-Module
IGBT-modules
F4-100R12KS4
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 65°C
T† = 25°C
I† ÒÓÑ
I†
100
130
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 65°C
T† = 25°C
I†ç¢
PÚÓÚ
200
660
A
W
V
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 100 A, V•Š = 15 V, TÝÎ = 25°C
I† = 100 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
3,20 3,75
3,85
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 4,00 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
4,5
5,5
1,10
5,0
6,5
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
6,80
0,42
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 5,6 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 5,6 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,12
0,13
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 5,6 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 5,6 Â, TÝÎ = 125°C
0,05
0,06
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 5,6 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 5,6 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,31
0,36
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 100 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 5,6 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 5,6 Â, TÝÎ = 125°C
0,02
0,03
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 100 A, V†Š = 600 V, L» = 30 nH
V•Š = ±15 V, R•ÓÒ = 5,6 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 5,6 Â, TÝÎ = 125°C
EÓÒ
EÓËË
mJ
mJ
12,0
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 100 A, V†Š = 600 V, L» = 30 nH
V•Š = ±15 V, R•ÓËË = 5,6 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 5,6 Â, TÝÎ = 125°C
mJ
mJ
5,00
600
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
0,19 K/W
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2004-1-19
revision: 2.1
1
Technische Information / technical information
IGBT-Module
IGBT-modules
F4-100R12KS4
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒ
1200
100
V
A
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
t« = 1 ms
IŒç¢
I²t
200
A
repetitive peak forward current
Grenzlastintegral
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
I²t - value
4300
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 100 A, V•Š = 0 V, TÝÎ = 25°C
IŒ = 100 A, V•Š = 0 V, TÝÎ = 125°C
VŒ
Iç¢
QØ
2,00 2,55
1,70
V
V
Rückstromspitze
peak reverse recovery current
IŒ = 100 A, - diŒ/dt = 2300 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
56,0
82,0
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 100 A, -diŒ/dt = 2300 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
6,00
17,0
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 100 A, -diŒ/dt = 2300 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
EØþÊ
2,00
5,50
mJ
mJ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
0,32 K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Nennwiderstand
rated resistance
min. typ. max.
T† = 25°C
Rèë
ÆR/R
Pèë
5,00
kÂ
%
Abweichung von Ræåå
deviation of Ræåå
T† = 100°C, Ræåå = 493 Â
-5
5
Verlustleistung
power dissipation
T† = 25°C
20,0 mW
K
B-Wert
B-value
Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298,15 K))]
Bèëõëå
3375
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2004-1-19
revision: 2.1
2
Technische Information / technical information
IGBT-Module
IGBT-modules
F4-100R12KS4
Vorläufige Daten
preliminary data
Modul / module
Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 min.
insulation test voltage
Vš»¥¡
2,5
Cu
kV
Material Modulgrundplatte
material of module baseplate
Material für innere Isolation
material for internal insulation
Alè0é
10,0
Kriechstrecke
creepage distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
mm
mm
Luftstrecke
clearance distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
7,50
Vergleichszahl der Kriechwegbildung
comparative tracking index
CTI
> 225
min. typ. max.
0,009
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
RÚ̆™
LÙ†Š
K/W
nH
Modulinduktivität
stray inductance module
21
Modulleitungswiderstand,
Anschlüsse - Chip
module lead resistance,
terminals - chip
T† = 25°C, pro Schalter / per switch
R††óôŠŠó
2,60
mÂ
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
TÝÎ ÑÈà
TÝÎ ÓÔ
TÙÚÃ
M
150
°C
°C
°C
Temperatur im Schaltbetrieb
temperature under switching conditions
-40
-40
125
125
Lagertemperatur
storage temperature
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Schraube / screw M5
3,00
-
6,00 Nm
g
Gewicht
weight
G
300
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2004-1-19
revision: 2.1
3
Technische Information / technical information
IGBT-Module
IGBT-modules
F4-100R12KS4
Vorläufige Daten
preliminary data
Ausgangskennlinie IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
V•Š = 15 V
TÝÎ = 125°C
200
200
180
160
140
120
100
80
TÝÎ = 25°C
TÝÎ = 125°C
180
160
140
120
100
80
V•Š = 8V
V•Š = 9V
V•Š = 10V
V•Š = 12V
V•Š = 15V
V•Š = 20V
60
60
40
40
20
20
0
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
V†Š [V]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
V†Š [V]
Übertragungscharakteristik IGBT-Wechselr. (typisch)
transfer characteristic IGBT-inverter (typical)
I† = f (V•Š)
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-inverter (typical)
EÓÒ = f (I†), EÓËË = f (I†)
V†Š = 20 V
V•Š = ±15 V, R•ÓÒ = 5,6 Â, R•ÓËË = 5,6 Â, V†Š = 600 V,
TÝÎ = 125°C
200
35
180
160
140
120
100
80
TÝÎ = 25°C
TÝÎ = 125°C
EÓÒ
EÓËË
30
25
20
15
10
5
60
40
20
0
0
5
6
7
8 9
V•Š [V]
10
11
12
0
20 40 60 80 100 120 140 160 180 200
I† [A]
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2004-1-19
revision: 2.1
4
Technische Information / technical information
IGBT-Module
IGBT-modules
F4-100R12KS4
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 100 A, V†Š = 600 V, TÝÎ = 125°C
50
1
45
40
35
30
25
20
15
10
5
EÓÒ
EÓËË
ZÚÌœ† : IGBT
0,1
i:
rÍ[K/W]: 0,0036
1
2
3
4
0,01097 0,09564 0,07979
0,065
τÍ[s]:
0,0000119 0,00236 0,026
0
0,01
0,001
0
5
10 15 20 25 30 35 40 45 50 55
R• [Â]
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 5,6 Â, TÝÎ = 125°C
220
200
180
160
140
120
100
80
200
180
160
140
120
100
80
TÝÎ = 25°C
TÝÎ = 125°C
60
60
40
40
I†, Modul
I†, Chip
20
20
0
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6
VΠ[V]
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2004-1-19
revision: 2.1
5
Technische Information / technical information
IGBT-Module
IGBT-modules
F4-100R12KS4
Vorläufige Daten
preliminary data
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (IŒ)
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (R•)
R•ÓÒ = 5,6 Â, V†Š = 600 V, TÝÎ = 125°C
IŒ = 100 A, V†Š = 600 V, TÝÎ = 125°C
7
7
EØþÊ
EØþÊ
6
6
5
4
3
2
1
0
5
4
3
2
1
0
0
20 40 60 80 100 120 140 160 180 200
IΠ[A]
0
5
10 15 20 25 30 35 40 45 50 55
R• [Â]
Transienter Wärmewiderstand Diode-Wechselr.
transient thermal impedance diode-inverter
ZÚÌœ† = f (t)
NTC-Temperaturkennlinie (typisch)
NTC-temperature characteristic (typical)
R = f (T)
1
100000
ZÚÌœ† : Diode
RÚáÔ
10000
1000
100
0,1
i:
rÍ[K/W]: 0,00605
1
2
3
4
0,01817 0,16135 0,13443
0,065
τÍ[s]:
0,0000119 0,00236 0,026
0,01
0,001
0,01
0,1
t [s]
1
10
0
20
40
60
80
T† [°C]
100 120 140 160
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2004-1-19
revision: 2.1
6
Technische Information / technical information
IGBT-Module
IGBT-modules
F4-100R12KS4
Vorläufige Daten
preliminary data
Schaltplan / circuit diagram
ϑ
Gehäuseabmessungen / package outlines
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2004-1-19
revision: 2.1
7
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