DBFS75R12KE3B320 [ETC]
IGBT Module ; IGBT模块\n
| 型号： | DBFS75R12KE3B320 |
| 厂家： | 
ETC |
| 描述： | IGBT Module
|
| 文件： | 总7页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Technische Information / technical information
IGBT-Module
IGBT-modules
FS75R12KE3_B3
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C
T† = 25°C
I† ÒÓÑ
I†
75
100
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
150
355
A
W
V
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 75 A, V•Š = 15 V, TÝÎ = 25°C
I† = 75 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
1,70 2,15
2,00
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 3,00 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
5,0
5,8
0,70
10
6,5
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
5,30
0,20
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 75 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,26
0,29
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 75 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 125°C
0,03
0,05
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 75 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,42
0,52
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 75 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 125°C
0,07
0,09
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 75 A, V†Š = 600 V, L» = 50 nH
V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 4,7 Â, TÝÎ = 125°C
EÓÒ
EÓËË
4,70
6,75
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 75 A, V†Š = 600 V, L» = 50 nH
V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 125°C
6,20
10,0
mJ
mJ
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
300
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
0,35 K/W
prepared by: Christian Wolf
approved by: Robert Severin
date of publication: 2003-7-31
revision: 2.0
1
Technische Information / technical information
IGBT-Module
IGBT-modules
FS75R12KE3_B3
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒ
1200
75
V
A
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
t« = 1 ms
IŒç¢
I²t
150
1200
A
repetitive peak forward current
Grenzlastintegral
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
I²t - value
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 75 A, V•Š = 0 V, TÝÎ = 25°C
IŒ = 75 A, V•Š = 0 V, TÝÎ = 125°C
VŒ
Iç¢
QØ
1,65 2,15
1,65
V
V
Rückstromspitze
peak reverse recovery current
IŒ = 75 A, - diŒ/dt = 2000 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
90,0
100
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 75 A, -diŒ/dt = 2000 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
7,00
14,0
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 75 A, -diŒ/dt = 2000 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
EØþÊ
3,00
6,00
mJ
mJ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
0,58 K/W
Strommesswiderstand / shunt
Nennwiderstand
rated resistance
min. typ. max.
TÊ = 20°C
Rèå
2,40
<30
mÂ
ÔÔÑõŸ
W
Temperaturkoeffizient
temperature coefficient (tcr)
20°C-60°C
TÊ = 80°C
Belastbarkeit pro Shunt-Widerstand
load capacity per shunt-resistor
P
20
Betriebstemperatur Shunt-Widerstand
operation temperatur shunt-resistor
TÚÝÎÓÔ
RÚÌœ†
140
°C
Innerer Wärmewiderstand; DC
thermal resistance; junktion to case
2,9 K/W
prepared by: Christian Wolf
approved by: Robert Severin
date of publication: 2003-7-31
revision: 2.0
2
Technische Information / technical information
IGBT-Module
IGBT-modules
FS75R12KE3_B3
Vorläufige Daten
preliminary data
Modul / module
Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 min.
insulation test voltage
Vš»¥¡
2,5
Cu
kV
Material Modulgrundplatte
material of module baseplate
Material für innere Isolation
material for internal insulation
Alè0é
10,0
Kriechstrecke
creepage distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
mm
mm
Luftstrecke
clearance distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
7,50
Vergleichszahl der Kriechwegbildung
comparative tracking index
CTI
> 225
min. typ. max.
0,009
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
RÚ̆™
LÙ†Š
K/W
nH
Modulinduktivität
stray inductance module
25
Modulleitungswiderstand,
Anschlüsse - Chip
module lead resistance,
terminals - chip
T† = 25°C, pro Schalter / per switch
R††óôŠŠó
1,80
mÂ
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
TÝÎ ÑÈà
TÝÎ ÓÔ
TÙÚÃ
M
150
°C
°C
°C
Temperatur im Schaltbetrieb
temperature under switching conditions
-40
-40
125
125
Lagertemperatur
storage temperature
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Schraube / screw M5
3,00
-
6,00 Nm
g
Gewicht
weight
G
300
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
prepared by: Christian Wolf
approved by: Robert Severin
date of publication: 2003-7-31
revision: 2.0
3
Technische Information / technical information
IGBT-Module
IGBT-modules
FS75R12KE3_B3
Vorläufige Daten
preliminary data
Ausgangskennlinie IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
V•Š = 15 V
TÝÎ = 125°C
150
150
135
120
105
90
TÝÎ = 25°C
TÝÎ = 125°C
135
120
105
90
V•Š = 19V
V•Š = 17V
V•Š = 15V
V•Š = 13V
V•Š = 11V
V•Š = 9V
75
75
60
60
45
45
30
30
15
15
0
0
0,0
0,5
1,0
1,5 2,0
V†Š [V]
2,5
3,0
3,5
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
V†Š [V]
Übertragungscharakteristik IGBT-Wechselr. (typisch)
transfer characteristic IGBT-inverter (typical)
I† = f (V•Š)
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-inverter (typical)
EÓÒ = f (I†), EÓËË = f (I†)
V†Š = 20 V
V•Š = ±15 V, R•ÓÒ = 4,7 Â, R•ÓËË = 4,7 Â, V†Š = 600 V,
TÝÎ = 125°C
150
20
135
120
105
90
TÝÎ = 25°C
TÝÎ = 125°C
18
16
14
12
10
8
EÓÒ
EÓËË
75
60
45
6
30
4
15
2
0
0
5
6
7
8 9
V•Š [V]
10
11
12
0
25
50
75
I† [A]
100
125
150
prepared by: Christian Wolf
approved by: Robert Severin
date of publication: 2003-7-31
revision: 2.0
4
Technische Information / technical information
IGBT-Module
IGBT-modules
FS75R12KE3_B3
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 75 A, V†Š = 600 V, TÝÎ = 125°C
20
1
18
16
14
12
10
8
EÓÒ
EÓËË
ZÚÌœ† : IGBT
0,1
6
4
i:
rÍ[K/W]: 0,00663
τÍ[s]:
1
2
0,0202
0,0000119 0,002364 0,02601 0,06499
3
0,17619 0,14698
4
2
0
0,01
0,001
0
5
10
15
20 25
R• [Â]
30
35
40
45
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 4,7 Â, TÝÎ = 125°C
175
150
125
100
75
150
135
120
105
90
TÝÎ = 25°C
TÝÎ = 125°C
75
60
45
50
30
25
0
I†, Modul
I†, Chip
15
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VΠ[V]
prepared by: Christian Wolf
approved by: Robert Severin
date of publication: 2003-7-31
revision: 2.0
5
Technische Information / technical information
IGBT-Module
IGBT-modules
FS75R12KE3_B3
Vorläufige Daten
preliminary data
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (IŒ)
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (R•)
R•ÓÒ = 4,7 Â, V†Š = 600 V, TÝÎ = 125°C
IŒ = 75 A, V†Š = 600 V, TÝÎ = 125°C
10
8
9
8
7
6
5
4
3
2
1
0
EØþÊ
EØþÊ
7
6
5
4
3
2
1
0
0
25
50
75
IΠ[A]
100
125
150
0
5
10
15
20 25
R• [Â]
30
35
40
45
Transienter Wärmewiderstand Diode-Wechselr.
transient thermal impedance diode-inverter
ZÚÌœ† = f (t)
1
ZÚÌœ† : Diode
0,1
i:
rÍ[K/W]: 0,01097
τÍ[s]:
1
2
3
4
0,03294 0,29244 0,24365
0,0000119 0,002364 0,02601 0,06499
0,01
0,001
0,01
0,1
t [s]
1
10
prepared by: Christian Wolf
approved by: Robert Severin
date of publication: 2003-7-31
revision: 2.0
6
Technische Information / technical information
IGBT-Module
IGBT-modules
FS75R12KE3_B3
Vorläufige Daten
preliminary data
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
prepared by: Christian Wolf
approved by: Robert Severin
date of publication: 2003-7-31
revision: 2.0
7
相关型号：
©2020 ICPDF网 联系我们和版权申明