DEMO-ATF5X14-3A [ETC]
Evaluation board for the ATF-54143 and ATF-55143 ; 评估板为ATF - 54143和ATF- 55143\n
| 型号： | DEMO-ATF5X14-3A |
| 厂家： | 
ETC |
| 描述： | Evaluation board for the ATF-54143 and ATF-55143
|
| 文件： | 总16页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent ATF-54143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Features
• High linearity performance
• Enhancement Mode Technology[1]
• Low noise figure
• Excellent uniformity in product
specifications
• 800 micron gate width
Surface Mount Package
Description
SOT-343
Agilent Technologies’s ATF-54143
is a high dynamic range, low
noise, E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface
mount plastic package.
• Low cost surface mount small
plastic package SOT-343 (4 lead
SC-70)
• Tape-and-Reel packaging option
available
The combination of high gain,
high linearity and low noise
makes the ATF-54143 ideal for
cellular/PCS base stations,
MMDS, and other systems in the
450 MHz to 6 GHz frequency
range.
Specifications
2 GHz; 3 V, 60 mA (Typ.)
Pin Connections and
• 36.2 dBm output 3rd order intercept
Package Marking
• 20.4 dBm output power at 1 dB
gain compression
DRAIN
SOURCE
• 0.5 dB noise figure
SOURCE
GATE
• 16.6 dB associated gain
Note:
Applications
• Low noise amplifier for cellular/
PCS base stations
Top View. Package marking provides orientation
and identification
“4F” = Device Code
• LNA for WLAN, WLL/RLL and
MMDS applications
“x” = Date code character
identifies month of manufacture.
• General purpose discrete E-PHEMT
for other ultra low noise applications
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
ATF-54143 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
Symbol
Parameter
Units
Maximum
VDS
VGS
VGD
IDS
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
V
5
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
6.2 mW/°C for TL > 33°C.
V
-5 to 1
5
V
4. Thermal resistance measured using
mA
mW
dBm
mA
°C
120
150°C Liquid Crystal Measurement method.
5. The device can handle +10 dBm RF Input
Power provided IGS is limited to 2 mA. IGS at
P1dB drive level is bias circuit dependent. See
application section for additional information.
Pdiss
Pin max.
IGS
Total Power Dissipation[3]
RF Input Power
725
10[5]
2[5]
Gate Source Current
Channel Temperature
Storage Temperature
Thermal Resistance[4]
TCH
TSTG
θjc
150
°C
-65 to 150
162
°C/W
120
100
80
0.7V
0.6V
60
0.5V
40
20
0.4V
0.3V
0
0
1
2
3
4
5
6
7
V
(V)
DS
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
Product Consistency Distribution Charts[6, 7]
160
160
120
80
40
0
200
160
120
80
Cpk = 0.77
Cpk = 1.67
Cpk = 1.35
Stdev = 0.4
Stdev = 1.41
Stdev = 0.073
120
+3 Std
-3 Std
+3 Std
-3 Std
80
40
0
40
0
30
32
34
36
38
40
42
14
15
16
17
18
19
0.25
0.45
0.65
0.85
1.05
GAIN (dB)
OIP3 (dBm)
NF (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circuit losses have been de-embedded from actual measurements.
2
ATF-54143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.[2]
Max.
Vgs
Vth
Idss
Gm
Operational Gate Voltage
Threshold Voltage
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 4 mA
Vds = 3V, Vgs = 0V
V
0.4
0.59
0.38
1
0.75
0.52
5
V
0.18
—
Saturated Drain Current
Transconductance
µA
Vds = 3V, gm = ∆Idss/∆Vgs;
∆Vgs = 0.75-0.7 = 0.05V
mmho
230
410
560
Igss
NF
Gate Leakage Current
Vgd = Vgs = -3V
µA
—
—
200
Noise Figure[1]
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dB
dB
—
—
0.5
0.3
0.9
—
Ga
Associated Gain [1]
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dB
dB
15
—
16.6
23.4
18.5
—
OIP3
P1dB
Notes:
Output 3rd Order
Intercept Point[1]
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
dBm
33
—
36.2
35.5
—
—
1dB Compressed
Output Power[1]
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
dBm
—
—
20.4
18.4
—
—
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
50 Ohm
Input
Output
50 Ohm
Input
Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Matching Circuit
Γ_mag = 0.30
Γ_ang = 150°
(0.3 dB loss)
Matching Circuit
Γ_mag = 0.035
Γ_ang = -71°
(0.4 dB loss)
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
DUT
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit repre-
sents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from
actual measurements.
3
ATF-54143 Typical Performance Curves
0.7
19
18
17
16
15
14
13
12
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6
0.5
0.4
3V
4V
0.3
3V
4V
3V
4V
0.2
0
20
40
I
60
80
100
0
20
40
I
60
(mA)
80
100
0
20
40
I
60
80
100
(mA)
(mA)
d
ds
d
Figure 6. Fmin vs. I and V Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 8. Gain vs. I and V Tuned for
Max OIP3 and Fmin at 2 GHz.
ds
ds
Figure 7. Fmin vs. I and V Tuned for
ds ds
Max OIP3 and Min NF at 900 MHz.
ds
ds
42
37
32
27
22
17
12
25
24
23
22
21
20
19
18
40
35
30
25
20
15
3V
4V
3V
4V
3V
4V
0
20
40
60
(mA)
80
100
0
20
40
60
(mA)
80
100
0
20
40
60
(mA)
80
100
I
I
ds
I
ds
ds
Figure 10. OIP3 vs. I and V Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 11. OIP3 vs. I and V Tuned for
Max OIP3 and Fmin at 900 MHz.
Figure 9. Gain vs. I and V Tuned for
Max OIP3 and Fmin at 900 MHz.
ds
ds
ds
ds
ds
ds
24
22
20
18
16
14
12
23
22
21
20
19
18
17
16
15
35
30
25
20
15
10
5
25°C
-40°C
85°C
3V
4V
3V
4V
0
20
40
60
80
100
0
20
40
60
80
100
0
1
2
3
4
5
6
[1]
[1]
I
dq
(mA)
I
dq
(mA)
FREQUENCY (GHz)
Figure 12. P1dB vs. I and V Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Figure 13. P1dB vs. I and V Tuned for
Max OIP3 and Fmin at 900 MHz.
dq
ds
dq
ds
Notes:
1. Idq represents the quiescent drain current
without RF drive applied. Under low values of
Ids, the application of RF drive will cause Id to
increase substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
4
ATF-54143 Typical Performance Curves, continued
45
40
35
30
25
20
15
10
21
20.5
20
2
1.5
1.0
0.5
0
25°C
-40°C
85°C
19.5
19
18.5
18
25°C
-40°C
85°C
25°C
-40°C
85°C
17.5
17
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. Fmin[2] vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Figure 16. OIP3 vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Figure 17. P1dB vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
1.4
1.2
1.0
0.8
0.6
0.4
60 mA
40 mA
80 mA
0.2
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
[1]
Figure 18. Fmin vs. Frequency and I
at 3V.
ds
Note:
ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3,
VDS = 3V, IDS = 60 mA
1. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
Freq
(GHz)
ΓOut_Mag.[1]
ΓOut_Ang.[1]
OIP3
(dBm)
P1dB
(dBm)
(Mag)
(Degrees)
0.9
2.0
3.9
5.8
0.017
0.026
0.013
0.025
115
-85
35.54
36.23
37.54
35.75
18.4
20.38
20.28
18.09
173
102
Note:
1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
5
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 40 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.99
0.83
0.72
0.70
0.65
0.63
0.62
0.61
0.61
0.63
0.66
0.69
0.71
0.72
0.76
0.83
0.85
0.88
0.89
0.87
0.88
0.87
0.87
0.92
-17.6
-76.9
-114
27.99
25.47
22.52
21.86
19.09
17.38
17.00
15.33
13.91
11.59
9.65
25.09
18.77
13.37
12.39
9.01
7.40
7.08
5.84
4.96
3.80
3.04
2.51
2.15
1.86
1.62
1.39
1.18
1.03
0.91
0.78
0.64
0.52
0.44
0.38
168.5
130.1
108
0.009
0.036
0.047
0.049
0.057
0.063
0.065
0.072
0.080
0.094
0.106
0.118
0.128
0.134
0.145
0.150
0.149
0.150
0.149
0.143
0.132
0.121
0.116
0.109
80.2
52.4
40.4
38.7
33.3
30.4
29.8
26.6
22.9
14
0.59
0.44
0.33
0.31
0.24
0.20
0.19
0.15
0.12
0.10
0.14
0.17
0.20
0.22
0.27
0.37
0.45
0.51
0.54
0.61
0.65
0.70
0.73
0.76
-12.8
-54.6
-78.7
-83.2
-99.5
-108.6
-110.9
-122.6
-137.5
176.5
138.4
117.6
98.6
34.45
27.17
24.54
24.03
21.99
20.70
20.37
19.09
17.92
15.33
12.99
11.50
10.24
8.83
0.5
0.9
1.0
-120.6
-146.5
-162.1
-165.6
178.5
164.2
138.4
116.5
97.9
103.9
87.4
1.5
1.9
76.6
2.0
74.2
2.5
62.6
3.0
51.5
4.0
31
5.0
11.6
4.2
6.0
8.01
-6.7
-6.1
7.0
80.8
6.64
-24.5
-42.5
-60.8
-79.8
-96.9
-112.4
-129.7
-148
-164.8
-178.4
170.1
156.1
-17.6
-29.3
-40.6
-56.1
-69.3
-81.6
-95.7
-110.3
-124
-134.6
-144.1
-157.4
8.0
62.6
5.38
73.4
9.0
45.2
4.20
52.8
8.17
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
28.2
2.84
38.3
8.57
13.9
1.42
25.8
7.47
-0.5
0.23
12.7
7.50
-15.1
-31.6
-46.1
-54.8
-62.8
-73.6
-0.86
-2.18
-3.85
-5.61
-7.09
-8.34
-4.1
6.60
-20.1
-34.9
-45.6
-55.9
-68.7
4.57
3.47
2.04
1.05
1.90
Typical Noise Parameters, VDS = 3V, IDS = 40 mA
40
35
30
25
20
15
10
5
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
0.17
0.22
0.24
0.42
0.45
0.51
0.59
0.69
0.90
1.14
1.17
1.24
1.57
1.64
0.34
0.32
0.32
0.29
0.29
0.30
0.32
0.34
0.45
0.50
0.52
0.58
0.60
0.69
34.80
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.09
0.16
0.18
0.33
0.56
0.87
27.83
23.57
22.93
18.35
17.91
16.39
15.40
13.26
11.89
10.95
10.64
9.61
53.00
MAG
60.50
108.10
111.10
136.00
169.90
-151.60
-119.50
-101.60
-99.60
-79.50
-57.90
-39.70
S
21
0
-5
10
-15
0
5
10
15
20
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 3V, 40 mA.
8.36
7.77
10.0
1.8
0.80
-22.20
1.34
7.68
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
6
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.99
0.81
0.71
0.69
0.64
0.62
0.62
0.60
0.60
0.62
0.66
0.69
0.70
0.72
0.76
0.83
0.85
0.88
0.89
0.88
0.88
0.88
0.88
0.92
-18.9
-80.8
-117.9
-124.4
-149.8
-164.9
-168.3
176.2
162.3
137.1
115.5
97.2
28.84
26.04
22.93
22.24
19.40
17.66
17.28
15.58
14.15
11.81
9.87
27.66
20.05
14.01
12.94
9.34
7.64
7.31
6.01
5.10
3.90
3.11
2.58
2.20
1.90
1.66
1.42
1.20
1.05
0.93
0.80
0.66
0.54
0.46
0.40
167.6
128.0
106.2
102.2
86.1
0.01
0.03
0.04
0.05
0.05
0.06
0.06
0.07
0.08
0.09
0.11
0.12
0.13
0.14
0.15
0.15
0.15
0.15
0.15
0.14
0.13
0.12
0.12
0.11
80.0
0.54
0.40
0.29
0.27
0.21
0.17
0.17
0.13
0.11
0.10
0.14
0.18
0.20
0.23
0.29
0.38
0.46
0.51
0.55
0.61
0.66
0.70
0.73
0.76
-14.0
-58.8
-83.8
-88.5
-105.2
-114.7
-117.0
-129.7
-146.5
165.2
131.5
112.4
94.3
34.42
28.25
25.44
24.13
22.71
21.05
20.86
19.34
18. 04
1 4.87
13.27
11.72
10.22
9.02
0.5
52.4
0.9
41.8
1.0
40.4
1.5
36.1
1.9
75.6
33.8
2.0
73.3
33.3
2.5
61.8
30.1
3.0
51.0
26.5
4.0
30.8
17.1
5.0
11.7
6.8
6.0
8.22
-6.4
-3.9
7.0
80.2
6.85
-24.0
-41.8
-59.9
-78.7
-95.8
-111.1
-128.0
-146.1
-162.7
-176.6
171.9
157.9
-15.8
-28.0
-39.6
-55.1
-68.6
-80.9
-94.9
-109.3
-122.9
-133.7
-143.2
-156.3
8.0
62.2
5.58
70.1
9.0
45.0
4.40
50.6
8.38
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
28.4
3.06
36.8
8.71
13.9
1.60
24.4
7.55
-0.2
0.43
11.3
7.55
-14.6
-30.6
-45.0
-54.5
-62.5
-73.4
-0.65
-1.98
-3.62
-5.37
-6.83
-8.01
-5.2
6.70
-20.8
-35.0
-45.8
-56.1
-68.4
5.01
3.73
2.54
1.57
2.22
Typical Noise Parameters, VDS = 3V, IDS = 60 mA
40
35
30
25
20
15
10
5
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.15
0.20
0.22
0.42
0.45
0.52
0.59
0.70
0.93
1.16
1.19
1.26
1.63
1.69
1.73
0.34
0.32
0.32
0.27
0.27
0.26
0.29
0.36
0.47
0.52
0.55
0.60
0.62
0.70
0.79
42.3
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.10
0.18
0.20
0.37
0.62
0.95
1.45
28.50
24.18
23.47
18.67
18.29
16.65
15.56
13.53
12.13
11.10
10.95
9.73
62.8
MAG
67.6
116.3
120.1
145.8
178.0
-145.4
-116.0
-98.9
-96.5
-77.1
-56.1
-38.5
-21.5
S
21
0
-5
10
-15
0
5
10
15
20
FREQUENCY (GHz)
Figure 20. MSG/MAG and |S21|2 vs.
Frequency at 3V, 60 mA.
8.56
7.97
7.76
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
7
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 80 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.98
0.80
0.72
0.70
0.66
0.65
0.64
0.64
0.63
0.66
0.69
0.72
0.73
0.74
0.78
0.84
0.86
0.88
0.89
0.87
0.87
0.86
0.86
0.91
-20.4
-85.9
-123.4
-129.9
-154.6
-169.5
-172.8
172.1
158.5
133.8
112.5
94.3
28.32
25.32
22.10
21.40
18.55
16.81
16.42
14.69
13.24
10.81
8.74
26.05
18.45
12.73
11.75
8.46
6.92
6.62
5.42
4.59
3.47
2.74
2.25
1.91
1.63
1.41
1.19
1.00
0.88
0.78
0.67
0.56
0.47
0.40
0.36
167.1
126.8
105.2
101.3
85.4
0.01
0.04
0.05
0.05
0.06
0.07
0.07
0.09
0.10
0.12
0.13
0.14
0.15
0.16
0.17
0.16
0.16
0.16
0.15
0.14
0.13
0.12
0.11
0.10
79.4
0.26
0.29
0.30
0.30
0.30
0.29
0.29
0.29
0.29
0.33
0.39
0.42
0.44
0.47
0.52
0.59
0.64
0.68
0.70
0.73
0.76
0.78
0.79
0.81
-27.6
-104.9
-138.8
-144.3
-165.0
-177.6
179.4
164.4
150.2
126.1
107.8
91.8
34.16
26.64
24.06
23.71
21.49
19.95
19.76
17.80
16.62
14.61
12.03
10.52
9.12
0.5
53.3
0.9
43.9
1.0
42.7
1.5
38.6
1.9
74.9
35.7
2.0
72.6
35.0
2.5
61.1
30.6
3.0
50.1
25.5
4.0
29.9
13.4
5.0
11.1
1.2
6.0
7.03
-6.5
-11.3
-24.5
-38.1
-51.1
-66.8
-79.8
-91.7
-105.6
-119.5
-132.3
-141.7
-150.4
-163.0
7.0
77.4
5.63
-23.5
-41.1
-58.7
-76.4
-92.0
-105.9
-121.7
-138.7
-153.9
-165.9
-175.9
171.2
75.5
8.0
59.4
4.26
55.5
7.78
9.0
42.1
2.98
37.8
7.12
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
25.6
1.51
24.0
6.96
11.4
0.00
11.8
6.11
-2.6
-1.15
-2.18
-3.48
-5.02
-6.65
-7.92
-8.92
-0.8
5.67
-17.0
-33.3
-47.3
-55.6
-63.4
-74.2
-16.7
-31.7
-44.9
-54.9
-64.2
-76.2
5.08
3.67
2.65
1.48
0.49
1.29
Typical Noise Parameters, VDS = 3V, IDS = 80 mA
40
35
30
25
20
15
10
5
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.19
0.24
0.25
0.43
0.42
0.51
0.61
0.70
0.94
1.20
1.26
1.34
1.74
1.82
1.94
0.23
0.24
0.25
0.28
0.29
0.30
0.35
0.41
0.52
0.56
0.58
0.62
0.63
0.71
0.79
66.9
0.04
0.04
0.04
0.04
0.04
0.03
0.03
0.06
0.13
0.23
0.26
0.46
0.76
1.17
1.74
27.93
24.13
23.30
18.55
18.15
16.44
15.13
12.97
11.42
10.48
10.11
8.86
84.3
MAG
87.3
S
21
134.8
138.8
159.5
-173
0
-5
10
-15
-141.6
-113.5
-97.1
-94.8
-75.8
-55.5
-37.7
-20.8
0
5
10
15
20
FREQUENCY (GHz)
Figure 21. MSG/MAG and |S21|2 vs.
Frequency at 3V, 80 mA.
7.59
6.97
6.65
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
8
ATF-54143 Typical Scattering Parameters, VDS = 4V, IDS = 60 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.99
0.81
0.71
0.69
0.64
0.62
0.61
0.60
0.60
0.62
0.65
0.68
0.70
0.72
0.76
0.83
0.86
0.88
0.90
0.87
0.88
0.88
0.87
0.92
-18.6
-80.2
-117.3
-123.8
-149.2
-164.5
-167.8
176.6
162.6
137.4
115.9
97.6
28.88
26.11
23.01
22.33
19.49
17.75
17.36
15.66
14.23
11.91
10.00
8.36
27.80
20.22
14.15
13.07
9.43
7.72
7.38
6.07
5.15
3.94
3.16
2.62
2.24
1.94
1.70
1.46
1.24
1.08
0.96
0.82
0.68
0.55
0.46
0.40
167.8
128.3
106.4
102.4
86.2
0.01
0.03
0.04
0.04
0.05
0.06
0.06
0.07
0.07
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.15
0.15
0.15
0.15
0.14
0.13
0.12
0.11
80.1
0.58
0.42
0.31
0.29
0.22
0.18
0.18
0.14
0.11
0.07
0.09
0.12
0.15
0.17
0.23
0.32
0.41
0.47
0.51
0.58
0.63
0.69
0.72
0.75
-12.6
-52.3
-73.3
-76.9
-89.4
-95.5
-97.0
-104.0
-113.4
-154.7
152.5
127.9
106.9
78.9
34.44
28.29
25.49
25.14
22.76
21.09
20.90
19.38
18.67
15.46
13.20
11.73
10.47
9.31
0.5
52.4
0.9
41.7
1.0
40.2
1.5
36.1
1.9
75.7
34.0
2.0
73.3
33.5
2.5
61.9
30.7
3.0
51.1
27.3
4.0
30.9
18.7
5.0
11.7
9.0
6.0
-6.6
-1.4
7.0
80.6
7.01
-24.3
-42.3
-60.5
-79.6
-97.0
-112.8
-130.2
-148.8
-166.0
179.8
168.4
154.3
-12.9
-24.7
-36.1
-51.8
-65.4
-78.0
-92.2
-107.3
-121.2
-132.2
-142.3
-155.6
8.0
62.6
5.76
9.0
45.4
4.60
56.8
8.69
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
28.5
3.28
42.1
9.88
14.1
1.87
29.4
9.17
-0.4
0.69
16.0
8.57
-14.9
-31.4
-46.0
-54.8
-62.8
-73.7
-0.39
-1.72
-3.38
-5.17
-6.73
-7.93
-1.1
8.06
-17.6
-32.6
-43.7
-54.2
-67.2
4.90
3.86
2.65
1.33
2.26
Typical Noise Parameters, VDS = 4V, IDS = 60 mA
40
35
30
25
20
15
10
5
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.17
0.25
0.27
0.45
0.49
0.56
0.63
0.73
0.96
1.20
1.23
1.33
1.66
1.71
1.85
0.33
0.31
0.31
0.27
0.27
0.26
0.28
0.35
0.47
0.52
0.54
0.60
0.63
0.71
0.82
34.30
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.11
0.19
0.21
0.38
0.64
0.99
1.51
28.02
24.12
23.43
18.72
18.35
16.71
15.58
13.62
12.25
11.23
11.02
9.94
60.30
MAG
MSG
68.10
S
MAG
21
115.00
119.80
143.50
176.80
-145.90
-116.20
-98.80
-96.90
-77.40
-56.20
-38.60
-21.30
0
-5
10
-15
0
5
10
FREQUENCY (GHz)
15
20
Figure 22. MSG/MAG and |S21|2 vs.
Frequency at 4V, 60 mA.
8.81
8.22
8.12
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
9
C4
OUTPUT
Whereas a depletion mode
C1
INPUT
ATF-54143 Applications
Information
Q1
L2
Zo
Zo
PHEMT pulls maximum drain
current when Vgs = 0V, an en-
hancement mode PHEMT pulls
only a small amount of leakage
current when Vgs=0V. Only when
Vgs is increased above Vto, the
device threshold voltage, will
drain current start to flow. At a
L1
L4
L3
Introduction
C2
C3
C5
R3
R4
R5
Agilent Technologies’s ATF-54143
is a low noise enhancement mode
PHEMT designed for use in low
cost commercial applications in
the VHF through 6 GHz frequency
range. As opposed to a typical
depletion mode PHEMT where the
gate must be made negative with
respect to the source for proper
operation, an enhancement mode
PHEMT requires that the gate be
made more positive than the
source for normal operation.
Therefore a negative power
supply voltage is not required for
an enhancement mode device.
Biasing an enhancement mode
PHEMT is much like biasing the
typical bipolar junction transistor.
Instead of a 0.7V base to emitter
voltage, the ATF-54143 enhance-
ment mode PHEMT requires
about a 0.6V potential between
the gate and source for a nominal
drain current of 60 mA.
C6
R1
R2
Vds of 3V and a nominal Vgs of
Vdd
0.6V, the drain current Id will be
approximately 60 mA. The data
sheet suggests a minimum and
maximum Vgs over which the
desired amount of drain current
will be achieved. It is also impor-
tant to note that if the gate
terminal is left open circuited,
the device will pull some amount
of drain current due to leakage
current creating a voltage differ-
ential between the gate and
source terminals.
Figure 1. Typical ATF-54143 LNA with Passive
Biasing.
Capacitors C2 and C5 provide a
low impedance in-band RF
bypass for the matching net-
works. Resistors R3 and R4
provide a very important low
frequency termination for the
device. The resistive termination
improves low frequency stability.
Capacitors C3 and C6 provide
the low frequency RF bypass for
resistors R3 and R4. Their value
should be chosen carefully as C3
and C6 also provide a termina-
tion for low frequency mixing
products. These mixing products
are as a result of two or more in-
band signals mixing and produc-
ing third order in-band distortion
products. The low frequency or
difference mixing products are
bypassed by C3 and C6. For best
suppression of third order
Passive Biasing
Passive biasing of the ATF-54143
is accomplished by the use of a
voltage divider consisting of R1
and R2. The voltage for the
divider is derived from the drain
voltage which provides a form of
voltage feedback through the use
of R3 to help keep drain current
constant. Resistor R5 (approxi-
mately 10kΩ) provides current
limiting for the gate of enhance-
ment mode devices such as the
ATF-54143. This is especially
important when the device is
Matching Networks
The techniques for impedance
matching an enhancement mode
device are very similar to those
for matching a depletion mode
device. The only difference is in
the method of supplying gate
bias. S and Noise Parameters for
various bias conditions are listed
in this data sheet. The circuit
shown in Figure 1 shows a typical
LNA circuit normally used for
900 and 1900 MHz applications
(Consult the Agilent Technologies
website for application notes
covering specific applications).
High pass impedance matching
networks consisting of L1/C1 and
L4/C4 provide the appropriate
match for noise figure, gain, S11
and S22. The high pass structure
also provides low frequency gain
reduction which can be beneficial
from the standpoint of improving
out-of-band rejection at lower
frequencies.
distortion products based on the
CDMA 1.25 MHz signal spacing,
C3 and C6 should be 0.1 µF in
value. Smaller values of capaci-
tance will not suppress the
driven to P1dB or PSAT
.
generation of the 1.25 MHz
Resistor R3 is calculated based
on desired Vds, Ids and available
power supply voltage.
difference signal and as a result
will show up as poorer two tone
IP3 results.
VDD – Vds
Bias Networks
R3 =
(1)
p
Ids + IBB
One of the major advantages of
the enhancement mode technol-
ogy is that it allows the designer
to be able to dc ground the
source leads and then merely
apply a positive voltage on the
gate to set the desired amount of
quiescent drain current Id.
VDD is the power supply voltage.
Vds is the device drain to source
voltage.
Ids is the desired drain current.
IBB is the current flowing through
the R1/R2 resistor voltage
divider network.
10
C4
The values of resistors R1 and R2
are calculated with the following
formulas
OUTPUT
and rearranging equation (5)
provides the following formula
C1
INPUT
Q1
L2
Zo
Zo
L1
L4
L3
VDD
C2
C3
9
Vgs
R1 =
(5A)
C5
R4
R5
R6
R1 =
(2)
VDD – VB
p
p
IBB 1 +
IBB
(
)
VB
C7
Q2
C6
(Vds – Vgs) R1
Example Circuit
VDD = 5V
Vdd
R2 =
(3)
R7
R3
p
Vgs
R2
R1
Vds = 3V
Example Circuit
Ids = 60 mA
Figure 2. Typical ATF-54143 LNA with
Active Biasing.
R4 = 10Ω
VDD = 5V
Vds = 3V
Ids = 60 mA
Vgs = 0.59V
VBE = 0.7V
An active bias scheme is shown
in Figure 2. R1 and R2 provide a
constant voltage source at the
base of a PNP transistor at Q2.
The constant voltage at the base
of Q2 is raised by 0.7 volts at the
emitter. The constant emitter
voltage plus the regulated VDD
supply are present across resis-
tor R3. Constant voltage across
R3 provides a constant current
supply for the drain current.
Resistors R1 and R2 are used to
set the desired Vds. The com-
bined series value of these
Equation (1) calculates the
required voltage at the emitter of
the PNP transistor based on
desired Vds and Ids through
resistor R4 to be 3.6V. Equation
(2) calculates the value of resis-
tor R3 which determines the
drain current Ids. In the example
R3=23.3Ω. Equation (3) calcu-
lates the voltage required at the
junction of resistors R1 and R2.
This voltage plus the step-up of
the base emitter junction deter-
mines the regulated Vds. Equa-
tions (4) and (5) are solved
simultaneously to determine the
value of resistors R1 and R2. In
the example R1=1450Ω and
R2=1050Ω. R7 is chosen to be
1kΩ. This resistor keeps a small
amount of current flowing
Choose IBB to be at least 10X the
normal expected gate leakage
current. IBB was chosen to be
2 mA for this example. Using
equations (1), (2), and (3) the
resistors are calculated as
follows
R1 = 295Ω
R2 = 1205Ω
R3 = 32.3Ω
resistors also sets the amount of
extra current consumed by the
bias network. The equations that
describe the circuit’s operation
are as follows.
Active Biasing
Active biasing provides a means
of keeping the quiescent bias
point constant over temperature
and constant over lot to lot
variations in device dc perfor-
mance. The advantage of the
active biasing of an enhancement
mode PHEMT versus a depletion
mode PHEMT is that a negative
power source is not required. The
techniques of active biasing an
enhancement mode device are
very similar to those used to bias
a bipolar junction transistor.
VE = Vds + (Ids • R4)
(1)
through Q2 to help maintain bias
stability. R6 is chosen to be
10kΩ. This value of resistance is
necessary to limit Q1 gate
current in the presence of high
RF drive level (especially when
Q1 is driven to P1dB gain com-
pression point).
VDD – VE
R3 =
(2)
(3)
p
Ids
VB = VE – VBE
R1
VB =
VDD
(4)
(5)
p
R1 + R2
VDD = IBB (R1 + R2)
Rearranging equation (4)
provides the following formula
R1 (VDD – VB)
R2 =
(4A)
p
VB
11
ATF-54143 Die Model
Advanced_Curtice2_Model
MESFETM1
NFET=yes
PFET=no
Vto=0.3
Rf=
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.8
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Gscap=2
Cgs=1.73 pF
Cgd=0.255 pF
Gdcap=2
Beta=0.9
Lambda=82e-3
Alpha=13
Tau=
Fc=0.65
Rgd=0.25 Ohm
Rd=1.0125 Ohm
Rg=1.0 Ohm
Rs=0.3375 Ohm
Ld=
Lg=0.18 nH
Ls=
Cds=0.27 pF
Rc=250 Ohm
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.25 Ohm
Eg=
ATF-54143 curtice ADS Model
INSIDE Package
VAR
VAR1
K=5
Var
Egn
TLINP
TL1
TLINP
TL2
Z2=85
Z1=30
Z=Z2/2 Ohm
L=20 0 mil
K=K
Z=Z2/2 Ohm
L=20 0 mil
K=K
C
A=0.0000
F=1 GHz
TanD=0.001
A=0.0000
F=1 GHz
TanD=0.001
GaAsFET
C1
FET1
GATE
SOURCE
C=0.13 pF
Mode1=MESFETM1
Mode=Nonlinear
L
L6
L
L1
Port
G
Num=1
TLINP
TL7
TLINP
TL8
TLINP
TL4
TLINP
TL3
Z=Z1 Ohm Z=Z2 Ohm
Port
S2
L=0.175 nH
R=0.001
L=0.477 nH
R=0.001
Z=Z2/2 OhmZ=Z1 Ohm
L=5.0 mil L=15.0 mil
Num=4
L=15 mil
K=1
A=0.000
F=1 GHz
L=25 mil
K=K
A=0.000
F=1 GHz
K=K
K=1
C
C2
A=0.0000 A=0.0000
F=1 GHz F=1 GHz
TanD=0.001 TanD=0.001
C=0.159 pF
DRAIN
TanD=0.001 TanD=0.001
SOURCE
L
TLINP
TL5
TLINP
TL6
Port
D
Num=3
L7
L=0.746 nH
R=0.001
L
Port
TLINP
Z=Z2 Ohm Z=Z1 Ohm
L=26.0 mil L=15.0 mil
TLINP
L4
MSub
S1
TL9
TL10
L=0.4 nH
R=0.001
Num=2
Z=Z2 Ohm
L=10.0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
K=K
K=1
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
MSUB
MSub1
A=0.0000 A=0.0000
F=1 GHz F=1 GHz
TanD=0.001 TanD=0.001
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
12
Designing with S and Noise
eters and the simulated non-
Parameters and the Non-Linear Model linear model, be sure to include
The non-linear model describing
the ATF-54143 includes both the
die and associated package
the effect of the printed circuit
board to get an accurate compari-
son. This is shown schematically
in Figure 3.
model. The package model
includes the effect of the pins but
does not include the effect of the
additional source inductance
associated with grounding the
source leads through the printed
circuit board. The device S and
Noise Parameters do include the
effect of 0.020 inch thickness
printed circuit board vias. When
comparing simulation results
between the measured S param-
For Further Information
The information presented here is
an introduction to the use of the
ATF-54143 enhancement mode
PHEMT. More detailed application
circuit information is available
from Agilent Technologies.
Consult the web page or your
local Agilent Technologies sales
representative.
VIA2
V3
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V1
D=20.0 mil
H=25.0 mil
T=0.15 mil
DRAIN
SOURCE
ATF-54143
Rho=1.0
W=40.0 mil
VIA2
V4
MSub
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
SOURCE
GATE
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
Rough=0 mil
Figure 3. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters.
13
Noise Parameter Applications
Information
If the reflection coefficient of the much higher than 50Ω is required
matching network is other than
Go, then the noise figure of the
device will be greater than Fmin
based on the following equation.
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms. Match-
ing to such a high impedance
requires very hi-Q components in
order to minimize circuit losses.
As an example at 900 MHz, when
airwwound coils (Q>100) are
used for matching networks, the
loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
Fmin values at 2 GHz and higher
are based on measurements
while the Fmins below 2 GHz have
been extrapolated. The Fmin
values are based on a set of
16 noise figure measurements
made at 16 different impedances
using an ATN NP5 test system.
From these measurements, a true
NF = Fmin + 4 Rn
|Γs – Γo | 2
Zo (|1 + Γo|2)(1- |Γs|2)
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
Fmin is calculated. Fmin repre-
sents the true minimum noise
figure of the device when the
device is presented with an
impedance matching network
that transforms the source
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss. Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower Γo as compared to
narrower gate width devices.
Typically for FETs, the higher Γo
usually infers that an impedance
impedance, typically 50Ω, to an
impedance represented by the
reflection coefficient Go. The
designer must design a matching
network that will present Go to
the device with minimal associ-
ated circuit losses. The noise
figure of the completed amplifier
is equal to the noise figure of the
device plus the losses of the
matching network preceding the
device. The noise figure of the
device is equal to Fmin only when
the device is presented with Go.
Fmin of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Agilent Application 1085.
14
Ordering Information
Part Number
No. of Devices
Container
ATF-54143-TR1
ATF-54143-TR2
ATF-54143-BLK
3000
10000
100
7” Reel
13”Reel
antistatic bag
Package Dimensions
Outline 43
SOT-343 (SC70 4-lead)
1.30 (0.051)
BSC
1.30 (.051) REF
2.60 (.102)
E
1.30 (.051)
E1
0.85 (.033)
0.55 (.021) TYP
1.15 (.045) BSC
e
1.15 (.045) REF
D
h
A
A1
b TYP
C TYP
L
θ
DIMENSIONS
MIN. MAX.
SYMBOL
A
A1
b
0.80 (0.031)
0 (0)
1.00 (0.039)
0.10 (0.004)
0.35 (0.014)
0.20 (0.008)
2.10 (0.083)
2.20 (0.087)
0.65 (0.025)
0.25 (0.010)
0.10 (0.004)
1.90 (0.075)
2.00 (0.079)
0.55 (0.022)
C
D
E
e
h
0.450 TYP (0.018)
E1
L
1.15 (0.045)
0.10 (0.004)
0
1.35 (0.053)
0.35 (0.014)
10
θ
DIMENSIONS ARE IN MILLIMETERS (INCHES)
15
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
CARRIER
TAPE
8 mm
71
71
71
71
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
For Outline 4T
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
0
8° MAX.
5° MAX.
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
2.24 0.10
2.34 0.10
1.22 0.10
4.00 0.10
1.00 + 0.25
0.088 0.004
0.092 0.004
0.048 0.004
0.157 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.55 0.05
4.00 0.10
1.75 0.10
0.061 0.002
0.157 0.004
0.069 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 0.30
0.315 0.012
t
0.255 0.013 0.010 0.0005
5.4 0.10 0.205 0.004
0.062 0.001 0.0025 0.00004
1
COVER TAPE
WIDTH
C
TAPE THICKNESS
T
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 0.05
0.079 0.002
For product information and a complete list of Agilent
contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com
Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
Obsoletes 5988-6275EN
December 2, 2002
5988-8408EN
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