DFM200PXM33-A [ETC]
Fast Recovery Diode Modules - Series Diode Pair ; 快恢复二极管模块 - 系列二极管对\n型号: | DFM200PXM33-A |
厂家: | ETC |
描述: | Fast Recovery Diode Modules - Series Diode Pair
|
文件: | 总7页 (文件大小:170K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DFM200PXM33-A000
Fast Recovery Diode Module
DS5496-1.3 September 2001
FEATURES
KEY PARAMETERS
VRRM
VF
IF
3300V
2.5V
200A
400A
■ Low Reverse Recovery Charge
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base
(typ)
(max)
(max)
IFM
■ MMC Baseplate With AlN Substrates
APPLICATIONS
■ Chopper Diodes
■ Boost and Buck Converters
■ Free-wheel Circuits
■ Snubber Circuits
2(K2)
1(A2/K1)
3(A1)
■ Resonant Converters
■ Induction Heating
■ Multi-level Switch Inverters
The DFM200PXM33-A000 module houses a series
connected pair of 3300 volt, fast recovery diodes (FRDs).
Designed for low power loss, the module is suitable for a
variety of high voltage applications in motor drives and
power conversion.
Fig. 1 Circuit diagram
Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
ORDERING INFORMATION
Order As:
DFM200PXM33-A000
Note: When ordering, please use the complete part number.
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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DFM200PXM33-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
VRRM
IF
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
Test Conditions
Max. Units
Tvj = 125˚C
3300
200
400
20
V
A
DC, Tcase = 70˚C
Tcase = 115˚C, tp = 1ms
IFM
A
I2t
I2t value fuse current rating
Maximum power dissipation
Isolation voltage
VR = 0, tp = 10ms, Tvj = 125˚C
kA2s
W
Pmax
Visol
Tcase = 25˚C, Tvj = 125˚C
925
6.0
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS
kV
pC
Qpd
Partial discharge
10
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Creepage distance:
Clearance:
AlN
AlSiC
20mm
10mm
CTI (Critical Tracking Index): 175
Min.
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
Typ.
Symbol
Parameter
Max. Units
-
-
Rth(j-c)
Thermal resistance - diode (per arm)
108 ˚C/kW
-
Rth(c-h)
Thermal resistance - case to heatsink
(per module)
-
16
˚C/kW
-
Tj
Tstg
-
Junction temperature
Storage temperature range
Screw torque
-
-
-
-
125
125
5
˚C
˚C
–40
-
-
-
Mounting - M6
Nm
Nm
Electrical connections - M5
4
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DFM200PXM33-A000
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25˚C unless stated otherwise.
Parameter
Peak reverse current
Test Conditions
VR = 3300V, Tvj = 125˚C
IF = 200A
Min.
Typ.
-
Max. Units
Symbol
IRM
-
-
-
-
15
-
mA
V
Forward voltage
2.5
2.5
30
VF
IF = 200A, Tvj = 125˚C
-
-
V
L
Inductance
-
nH
DYNAMIC ELECTRICAL CHARACTERISTICS
Tvj = 25˚C unless stated otherwise.
Typ.
165
115
130
Symbol
Parameter
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Test Conditions
IF = 200A,
Min.
Max. Units
-
-
-
-
-
-
A
Irr
Qrr
Erec
dIF/dt = 1100A/µs,
VR = 1800V
µC
mJ
Tvj = 125˚C unless stated otherwise.
Min.
Typ.
185
190
220
Symbol
Parameter
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Test Conditions
IF = 200A,
Max. Units
-
-
-
-
-
-
A
Irr
Qrr
Erec
dIF/dt = 1000A/µs,
VR = 1800V
µC
mJ
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DFM200PXM33-A000
TYPICAL CHARACTERISTICS
400
1000
100
10
Tj = 25˚C
Tj = 125˚C
is measured at power busbars
and not the auxiliary terminals
350
300
250
200
150
100
50
V
F
Diode
1
2
3
4
Ri (˚C/KW)
2.9545 15.6459 22.2515 67.3233
0.0843 3.7205 33.2138 236.5275
τi (ms)
0
1
0
0.5
1.0
1.5
Forward voltage, VF - (V)
Fig. 2 Diode typical forward characteristics
2.0
2.5
3.0
3.5
4.0
10
0.001
0.01
0.1
Pulse width, tp - (s)
1
Fig. 4 Transient thermal impedance
1000
900
800
700
600
500
400
300
200
100
0
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Case temperature, Tcase - (°C)
Case temperature, Tcase - (°C)
Fig. 5 Power dissipation
Fig. 6DC current rating vs case temperature
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DFM200PXM33-A000
350
300
250
200
150
Tj = 125˚C
100
50
0
0
500
1000
1500
2000
2500
3000
3500
Reverse voltage, VR - (V)
Fig. 7 RBSOA
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DFM200PXM33-A000
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 550g
Module outline type code: P
6/7
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
Fax: +44-(0)1522-500550
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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