DH72080_技术文档

TUNING VARACTOR

Selection guide

TUNING VARACTOR

Selection Guide

PAGE

SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR

1-32

HIGH Q SILICON ABRUPT J UNCTION TUNING VARACTOR

- VBR = 30 V

- VBR = 45 V

1-34

1-35

SILICON HYPERABRUPT J UNCTION TUNING VARACTOR

1-36

MICROWAVE SILICON HYPERABRUPT J UNCTION TUNING VARACTOR

1-39

A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the

sam e function as the fam iliar, bulky, air dielectric stacked capacitors featured in traditional broadcast

band receivers.

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TUNING VARACTOR

Plastic package Surface Mount Silicon abrupt tuning varactor

S OT2 3 S URFACE MOUNT S ILICON ABRUP T

TUNING VARACTOR

Description

This series of silicon tuning varactors have an epitaxial m esa design with a high tem perature

passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This fam ily

is designed for a low cost m edium to high volum e m arket that m ay be supplied in tape and reel

for autom ated pick and place assem bly on surface m ount circuit boards.

Applications

The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.

They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.

Typical applications include low noise narrow and m oderate frequency bandwidth applications

(VCO m ainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned

ﬁlters, phase shifters, delay line, etc.

NOTE: Variation of the junction capacitance versus reverse voltage follows this equation:

C (0 V)

j

C (V )

j

r

=

γ

1 + V

r

[

]

φ

V

:

Reverse voltage

r

φ

Built-in potential .7V for Si

.5 for abrupt tuning varactor

γ

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TUNING VARACTOR

Plastic package Surface Mount Silicon abrupt tuning varactor

Electrical characteristics at Ta = +25° C

Reverse breakdown voltage, Vb = @10 µA: 30 V m in.

Breakdow n

voltage

V_BR

J unction

capacitance

Tuning

ratio

Figure

of m erit

Q

Electrical

param eters

C

j

F = 1 MHz

V_R= 4 V

Test Conditions

Type

I_R= 10 µA

C

/ C

j0V j30V

F = 50 MHz

V

pF

(1)

typ.

m in.

DH71010

DH71016

DH71020

DH71030

DH71045

DH71067

DH71100

30

1.0 ± 20%

1.6 ± 20%

2.0 ± 20%

3.0 ± 20%

4.5 ± 20%

6.7 ± 10%

10 ± 10%

4.0

4.5

4.6

4.7

4.8

4.9

5.0

4300

4100

3900

3400

2200

2600

2200

(1)

Other tolerance on request

Tem perature ranges:

Operating junction (T ): -55° C to +125° C

j

Storage :

-65° C to +150° C

Packages

SOD323

SOT23

SOT143

Packages

DH71010

DH71016

DH71020

DH71030

DH71045

DH71067

DH71100

DH71010-60

DH71016-60

DH71020-60

DH71030-60

DH71045-60

DH71067-60

DH71100-60

DH71010-51

DH71016-51

DH71020-51

DH71030-51

DH71045-51

DH71067-51

DH71100-51

DH71010-53

DH71016-53

DH71020-53

DH71030-53

DH71045-53

DH71067-53

DH71100-53

DH71010-54

DH71016-54

DH71020-54

DH71030-54

DH71045-54

DH71067-54

DH71100-54

DH71010-70

DH71016-70

DH71020-70

DH71030-70

DH71045-70

DH71067-70

DH71100-70

(1) Other conﬁguration available on request.

How to order?

DH71010

-

51

T3

Diode type

Package

Conditioning

inform ation

51: single SOT23

53: dual com m on

cathode SOT23

54: dual com m on

anode SOT23

T3: 3000 pieces

tape & reel

T10: 10000 pieces

tape & reel

blank: bulk

60: single SOD323

70: dual SOT143

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TUNING VARACTOR

High Q silicon abrupt junction tuning varactor

HIGH Q S ILICON ABRUP T J UNCTION TUNING VARACTOR

V_BR3 0 V

Description

This series of high Q epi-junction m icrowave tuning varactors (30 V) incorporates a passivated m esa

technology. It is well suited for frequency tuning applications up to Ku band.

CHIP DIODES

CHIP AND PACKAGED DIODES

PACKAGED DIODES (1)

V

_BR(10 µA) ≥ 30 V

junction Fig. of

capacitance merit

Standard cases

Other cases

Gold

dia

Ø

Tuning

ratio

Tuning

ratio

Characteristics at 25°C

Test Conditions

C

Q

C /C

30

TO T

30

T

j

TO

CASE

V = 4 V

R

CAPACITANCE

C

f = 1 MHZ f = 50 MHZ

b

Type

Case

µm

pF

Type

Case

typ.

± 20 % (2)

min.

C = 0.18 pF (3) min. C = 0.12 pF (3) min.

b

EH71004

EH71006

EH71008

EH71010

EH71012

EH71016

EH71020

EH71025

EH71030

EH71037

EH71045

EH71054

C2a

50

60

70

80

90

100

110

120

140

150

170

180

0.4

0.6

0.8

1.0

1.2

1.6

2.0

2.5

3.0

4500

4400

4300

4200

4100

3900

3600

3400

3200

3000

2800

DH71004

DH71006

DH71008

DH71010

DH71012

DH71016

DH71020

DH71025

DH71030

DH71037

DH71045

DH71054

F27d

3.0

3.4

3.7

4.0

4.3

4.5

4.6

4.7

4.8

M208

3.3

3.7

4.0

4.3

4.5

4.6

4.7

4.8

4.9

3.7

4.5

5.4

± 10 % (2)

C = 0.18 pF (3)

b

C = 0.2 pF (3)

b

EH71067

EH71080

EH71100

EH71120

EH71150

EH71180

EH71200

EH71220

EH71270

EH71330

EH71390

EH71470

EH71560

EH71680

EH71820

EH71999

C2a

C2b

C2c

C2d

200

220

250

270

300

330

350

370

410

450

500

540

590

650

720

800

6.7

8.0

2600

2400

2200

2000

1800

1700

1500

1400

1300

1200

950

DH71067

DH71080

DH71100

DH71120

DH71150

DH71180

DH71200

DH71220

DH71270

DH71330

DH71390

DH71470

DH71560

DH71680

DH71820

DH71999

F27d

4.9

5.0

5.1

5.2

BH142

4.9

5.0

5.1

5.2

10.0

12.0

15.0

18.0

20.0

22.0

27.0

33.0

39.0

47.0

56.0

68.0

82.0

100.0

750

650

500

400

300

(1) Custom cases available on request

(2) Closer capacitance tolerances available on request

Tem perature ranges:

Operating junction (T ) : -55° C to +150° C

j

(3) C = C + C

Storage

: -65° C to +175° C

T

j

b

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TUNING VARACTOR

High Q silicon abrupt junction tuning varactor

V_BR4 5 V

Description

This series of high Q epi-junction m icrowave tuning varactors (45 V) incorporates a passivated m esa

technology. It is well suited for frequency tuning applications up to X band.

Chip diodes

Chip and packaged diodes

_BR(10 µA) ≥ 45 V

Packaged diodes (1)

V

STANDARD CASES

OTHER CASES

GOLD

DIA

Ø

Junction

Capacitance

Fig. of

Merit

Q

Tuning

Ratio

Tuning

Ratio

C /C

45

TO T

Characteristics at 25° C

Test conditions

C

j

C /C

45

TO

T

Case

Capacitance

Case

Capacitance

V = 4 V

R

f = 1 MHZ f = 50 MHZ

C

b

Type

Case

µm

pF

Type

Case

typ.

± 20 % (2)

min.

C =0.18pF (3) min. C =0.12pF (3) min.

b

EH72004

EH72006

EH72008

EH72010

EH72012

EH72016

EH72020

EH72025

EH72030

EH72037

EH72045

EH72054

C2a

60

80

90

0.4

0.6

0.8

1.0

1.2

1.6

2.0

2.5

3.0

3000

2900

2800

2700

2600

2500

2400

2300

2200

2000

1900

DH72004

DH72006

DH72008

DH72010

DH72012

DH72016

DH72020

DH72025

DH72030

DH72037

DH72045

DH72054

F27d

3.5

3.9

4.2

4.5

4.7

5.0

5.2

5.4

5.5

5.6

5.7

5.8

M208

3.7

4.1

4.5

4.7

4.9

5.2

5.5

5.6

5.7

5.8

5.9

110

120

140

150

170

190

210

230

3.7

4.5

5.4

± 10 % (2)

C =0.18pF (3)

b

C = 0.2pF (3)

b

EH72067

EH72080

EH72100

EH72120

EH72150

EH72180

EH72200

EH72220

EH72270

EH72330

EH72390

C2b

C2c

250

280

310

340

380

420

440

470

520

570

620

6.7

8.0

10.0

12.0

15.0

18.0

20.0

22.0

27.0

1800

1700

1600

1500

1400

1300

1200

1100

1000

900

DH72067

DH72080

DH72100

DH72120

DH72150

DH72180

DH72200

DH72220

DH72270

DH72330

DH72390

F27d

5.9

6.0

BH142

6.0

33.0

39.0

800

± 10 % (2)

C =0.18pF (3)

b

EH72470

EH72560

EH72680

C2d

680

740

820

47.0

56.0

68.0

700

600

450

DH72470

DH72560

DH72680

BH28

6.0

± 10 % (2)

C =0.4pF (3)

b

EH72820

EH72999

C2g

900

1000

82.0

100.0

350

250

DH72820

DH72999

BH141

6.0

(1) Custom cases available on request

(2) Closer capacitance tolerances available on request

(3) = C + C

Tem perature ranges:

Operating junction (T ) : -55° C to +150° C

j

C

Storage

: -65° C to +175° C

T

j

b

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TUNING VARACTOR

Plastic package, Surface Mount hyperabrupt tuning varactor

P LASTIC PACKAGE, S URFACE MOUNT HYP ERABRUP T

TUNING VARACTOR

Description

This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate

a passivated m esa technology.This fam ily is designed for a low cost m edium to high volum e m arket that

m ay be supplied in tape and reel for autom ated pick and place assem bly on surface m ount circuit boards.

Application

The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of

capacitance range. They provide the highest Q factor (low reverse series resistance). Typical

applications include low noise narrow and m oderate frequency bandwidth applications (VCO m ainly)

from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned ﬁlters, phase

shifters, delay lines...

2 0 Vo lt hyp e ra b ru p t ju n c t io n va ra c t o rs

Characteristics @ Ta=+25° C

Reverse breakdown voltage, Vb = 20 V m in. @ 10 µA

Reverse Current, Ir = 200 nA @ 16 V

Tem perature ranges:

Operating junction (Tj) : -55° C to +125° C

Storage : -55° C to +150° C

Total capacitance (pF)

Ct

Tuning

ratio

Test

conditions

Type

f = 1 MHz

Vr = 1 V

typ

f = 1 MHz

Vr = 4 V

±20 %

f=1 MHz

Vr = 12 V

typ.

f = 1 MHz Ct1V/ Ct12V Ct1V/ Ct20V

Vr = 20 V

typ.

f = 1 MHz

typ.

f = 1 MHz

typ.

DH76010

DH76015

DH76022

DH76033

DH76047

DH76068

DH76100

DH76150

2.5

3.6

5.2

1.2

1.7

2.4

3.5

4.9

7.0

10.0

15.0

0.6

0.8

1.1

1.6

2.2

3.1

4.5

6.6

0.5

0.7

0.9

1.3

1.7

2.4

3.5

5.1

4.1

4.4

4.7

4.9

5.0

5.1

5.2

4.9

5.4

5.8

6.1

6.4

6.5

6.7

6.8

8.0

11.0

16.0

23.0

35.0

12 Vo lt hyp e ra b ru p t ju n c t io n va ra c t o rs

Characteristics @ Ta=+25° C

Reverse breakdown voltage, Vb = 12 V m in. @ 10 µA

Reverse Current, Ir = 200 nA @ 8 V

Tem perature ranges:

Operating junction (Tj) : -55° C to +125° C

Storage : -55° C to +150° C

Total capacitance (pF)

Ct

Tuning

ratio

Test

conditions

Type

f = 1 MHz

Vr = 1 V

typ

f = 1 MHz

Vr = 2.5 V

±20 %

f=1 MHz

Vr = 4 V

typ.

Ct1V/ Ct2.5V Ct1V/ Ct4V

f = 1 MHz

typ.

f = 1 MHz

typ.

DH77033

DH77047

DH77068

DH77100

DH77150

6.0

8.5

12.0

18.0

27.0

3.5

4.9

7.0

10.0

15.0

1.9

2.7

3.8

5.5

8.1

1.7

1.8

3.1

3.2

3.3

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TUNING VARACTOR

Plastic package, Surface Mount hyperabrupt tuning varactor

Typical junction capacitance versus reverse voltage

Profils in Cj

100.00

10.00

76010

76015

76022

76033

76047

76068

76100

76150

1.00

0.01

10

100

0.1

0.10

VR (V)

100

10

DH77033

DH77047

DH77068

DH77100

DH77150

1

0.1

10

V (V)

1-37

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TUNING VARACTOR

Plastic package, Surface Mount hyperabrupt tuning varactor

Packages

SOD323

SOT23

SOT143

Packages

DH76010

DH76015

DH76022

DH76033

DH76047

DH76068

DH76100

DH76150

DH77033

DH77047

DH77068

DH77100

DH77150

DH76010-60

DH76015-60

DH76022-60

DH76033-60

DH76047-60

DH76068-60

DH76100-60

DH76150-60

DH77033-60

DH77047-60

DH77068-60

DH77100-60

DH77150-60

DH76010-51

DH76015-51

DH76022-51

DH76033-51

DH76047-51

DH76068-51

DH76100-51

DH76150-51

DH77033-51

DH77047-51

DH77068-51

DH77100-51

DH77150-51

DH76010-53

DH76015-53

DH76022-53

DH76033-53

DH76047-53

DH76068-53

DH76100-53

DH76150-53

DH77033-53

DH77047-53

DH77068-53

DH77100-53

DH77150-53

DH76010-54

DH76015-54

DH76022-54

DH76033-54

DH76047-54

DH76068-54

DH76100-54

DH76150-54

DH77033-54

DH77047-54

DH77068-54

DH77100-54

DH77150-54

DH76010-70

DH76015-70

DH76022-70

DH76033-70

DH76047-70

DH76068-70

DH76100-70

DH76150-70

DH77033-70

DH77047-70

DH77068-70

DH77100-70

DH77150-70

(1) Other conﬁguration available on request.

How to order?

DH76150

-

51

T3

Diode type

Package

Conditioning

inform ation

51: single SOT23

53: dual com m on

cathode SOT23

54: dual com m on

anode SOT23

T3: 3000 pieces

tape & reel

T10: 10000 pieces

tape & reel

blank: bulk

60: single SOD323

70: dual SOT143

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TUNING VARACTOR

High Q silicon hyperabrupt junction tuning varactor

HIGH Q S ILICON HYP ERABRUP T J UNCTION TUNING VARACTOR

Description

This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate

a passivated m esa technology. Packaged or chip devices are available for linear electronic tuning from

VHF up to Ku band.

Characteristics @ Ta = +25° C

Reverse breakdown voltage, Vb = @ 10 µA: 20 V m in.

Reverse current,

Ir @ 16 V:

200 nA

Figure of

merit (Q)

Total capacitance (pF)

Ct

Tuning

ratio

Test

f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz Ct1V/Ct12V Ct1V/CT20V

conditions

Vr = 4 V Vr = 1 V Vr = 4 V Vr = 12 V Vr = 20 V f = 1 MHz

f = 1 MHz

typ.

4.9

(1)

Type

Case

typ.

2200

2000

1700

1400

1000

700

typ.

2.5

3.6

5.2

7.7

11

±20%

1.2

1.7

2.4

3.5

typ.

0.6

0.8

1.1

typ.

0.5

0.7

0.9

1.3

typ.

4.1

4.4

4.7

4.9

5.0

5.1

5.2

Chip

DH76010 F27d

DH76015 F27d

DH76022 F27d

DH76033 F27d

DH76047 F27d

DH76068 F27d

DH76100 F27d

DH76150 F27d

EH76010

EH76015

EH76022

EH76033

EH76047

EH76068

EH76100

EH76150

5.4

5.8

6.1

6.4

6.5

6.7

6.8

1.6

4.9

6.9

2.2

3.0

4.5

6.6

1.7

16

2.4

3.5

5.1

400

140

23

34

10.2

15.2

(1)

Custom cases available on request

Tem perature ranges:

Operating junction (T ) : -55° C to +150° C

j

Storage

: -65° C to +150° C

Typical junction capacitance reverse voltage

Profils in Cj

100.00

10.00

76010

76015

76022

76033

76047

76068

76100

76150

1.00

0.01

0.1

10

100

0.10

VR (V)

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型号：	DH72080
厂家：	ETC
描述：	TUNING VARACTOR 调谐变容二极管二极管变容二极管
文件：	总9页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DH72080 [ETC]

相关型号：

DH72100

DH72120

DH72150

DH72180

DH72200

DH72220

DH72270

DH72330

DH72390

DH72470

DH72560

DH72680