DS-11802D4-105Y [ETC]

Converter ; 变流器\n
DS-11802D4-105Y
型号: DS-11802D4-105Y
厂家: ETC    ETC
描述:

Converter
变流器\n

转换器 CD
文件: 总7页 (文件大小:227K)
中文:  中文翻译
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DS1200  
Serial RAM Chip  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
C 1024 Bits of Read/Write Memory  
C Low Data Retention Current for Battery  
Backup Applications  
C Four Million Bits/Second Data Rate  
C Single-Byte or Multiple-Byte Data Transfer  
Capability  
C No Restrictions on the Number of Write  
Cycles  
16-Pin SO (300mil)  
C Low-Power CMOS Circuitry  
See Mech. Drawings Section  
APPLICATIONS  
C Software Authorization  
C Computer Identification  
C System Access Control  
C Secure Personnel Areas  
C Calibration  
PIN DESCRIPTION  
VCC  
- +5V  
RST  
- Reset  
C Automatic System Setup  
C Traveling Work Record  
DQ  
- Data Input/Output  
- Clock  
CLK  
GND  
VBAT  
NC  
- Ground  
- Battery (+)  
- No Connection  
DESCRIPTION  
The DS1200 serial RAM chip is a miniature read/write memory that can randomly access individual  
8-bit strings (bytes) or sequentially access the entire 1024-bit contents (burst). Interface cost to a  
microprocessor is minimized by on-chip circuitry, which permits data transfers with only three signals:  
CLK, RST , and DQ.  
Nonvolatility can be achieved by connecting a battery of 2V to 4V at the battery input VBAT. A load of  
0.5ꢀꢁꢂshould be used to size the external battery for the required data retention time. If nonvolatility is  
not required the VBAT pin should be grounded.  
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092702  
DS1200  
Figure 1. ELECTRONIC TAG BLOCK DIAGRAM  
Figure 2. ADDRESS/COMMAND  
OPERATION  
The block diagram (Figure 1) illustrates the main elements of the device: shift register, control logic,  
NV RAM, and power switch. To initiate a memory cycle, RST is taken high and 24 bits are loaded into  
the shift register, providing both address and command information. Each bit is input serially on the  
rising edge of the CLK input. Seven address bits specify one of the 128 RAM locations. The remaining  
command bits specify read/write and byte/burst mode. After the first 24 clocks, which load the shift  
register, additional clocks will output data for a read or input data for a write. The number of clock pulses  
equal 24 plus 8 for byte mode or 24 plus 1024 for burst mode.  
For hardwired applications, active power is supplied by the VCC pin. Alternatively, for user-insertable  
applications, power can be supplied by the RST pin.  
2 of 7  
DS1200  
ADDRESS/COMMAND  
Each memory transfer consists of a 3-byte input called the address/command. The address/command is  
shown in Figure 2. As defined, the first byte of the address/command specifies whether the memory is  
written or read. If any one of the bits of the first byte of the address/command fail to meet the exact  
pattern of read or write, the cycle is aborted and all future inputs to the tag are ignored until RST is  
brought low and then high again to begin a new cycle. The 8-bit pattern for read is 10011101. The second  
byte of the address/command describes address inputs A0 in bit 0 through A6 in bit 6. Bit 7 of the second  
byte of the address/command word must be set to logic 0. If bit 7 does not equal logic 0, the cycle is  
aborted and all future inputs to the tag are ignored until RST is brought low and then high again to begin  
a new cycle. The third byte of the address/command (bits 0 through 6) must be set to logic 0 or the cycle  
is aborted and all future inputs are ignored until RST is brought low and then high again to begin a new  
cycle. Bit 7 of byte 3 of the address/command is used along with address bits A0 through A6 to define  
burst mode. When A0 through A6 equals logic 0 and bit 7 of byte 3 of the address command equals logic  
1, the tag will enter the burst mode after the address/command sequence is complete.  
BURST MODE  
Burst mode is when all address bits (A0 to A6) of the address/command are set to logic 0 and bit 7 of byte  
3 to logic 1. The burst mode causes 128 consecutive bytes to be read or written. Burst mode terminates  
when the RST input is driven low.  
RESET AND CLOCK CONTROL  
All data transfers are initiated by driving the RST input high. The RST input serves three functions.  
First, RST turns on the control logic, which allows access to the shift register for the address/command  
sequence. Second, the RST signal provides a power source for the cycle to follow. To meet this  
requirement, a drive source for RST of 2mA at 3.8V is required. However if the VCC pin is connected to  
a 5V source within nominal limits, then the RST pin is not used as a source of power and input levels  
revert to normal VIH and VIL inputs with a drive current requirement of 500ꢀꢁ. Finally, the RST signal  
provides a method of terminating either single byte or multiple byte data transfers. A clock cycle is a  
sequence of falling edge followed by a rising edge. For data inputs, the data must be valid during the  
rising edge of the clock cycle. Address/command bits and data bits are input on the rising edge of the  
clock and data bits are output on the falling edge of the clock. All data transfer terminates if the RST  
input is low and DQ pin goes to a high-impedance state. When data transfer to the serial RAM chip is  
terminated using, RST , the transition of RST must occur while the clock is at high level to avoid  
disturbing the last bit of data. Data transfer is illustrated in Figure 3.  
DATA INPUT  
Following the 24 clock cycles that input an address/command, a data byte is input on the rising edge of  
the next eight clock cycles, assuming that the read/write and write/read bits are properly set (for data  
input byte 1, bit 0 = 1; bit 1 = 0; bit 2 = 1; bit 3 = 1; bit 4 = 1; bit 5 = 0; bit 6 = 0; bit 7 = 1).  
DATA OUTPUT  
Following the 24 clock cycles that input the read mode, a data byte is output on the falling edge of the  
next eight clock cycles (for data output byte 1, bit 0 = 0; bit 1 = 1; bit 2 = 0; bit 3= 0; bit 4 = 0; bit 5 = 1;  
bit 6 = 1; bit 7 = 0).  
3 of 7  
DS1200  
Figure 3. DATA TRANSFER  
NOTES:  
1) Data input sampled on rising edge of clock cycle.  
2) Data output changes on falling edge of clock.  
4 of 7  
DS1200  
Figure 4. READ/WRITE DATA TRANSFER  
5 of 7  
DS1200  
ABSOLUTE MAXIMUM RATING*  
Voltage Range on Any Pin Relative to Ground  
Operating Temperature Range  
-1.0V to +7.0V  
0LC to +70LC  
-40LC to +70LC  
Storage Temperature Range  
* This is a stress rating only and functional operation of the device at these or any other conditions  
beyond those indicated in the operation sections of this specification is not implied. Exposure to  
absolute maximum rating conditions for extended periods of time can affect reliability.  
RECOMMENDED DC OPERATING CONDITIONS  
(0LC to +70LC)  
UNITS NOTES  
PARAMETER  
Logic 1  
SYMBOL  
VIH  
MIN  
2.0  
TYP  
MAX  
V
V
1, 2, 10  
1
Logic 0  
VIL  
-0.3  
3.8  
0.8  
VIHE  
1, 7, 11  
RST Logic 1  
Power Supply Voltage  
Battery Voltage  
VCC  
4.5  
2.0  
5.0  
5.5  
4.0  
V
V
1
1
VBAT  
DC ELECTRICAL CHARACTERISTICS  
(0LC to +70LC; VCC = 5V M 10%)  
PARAMETER  
Input Leakage  
SYMBOL  
MIN  
TYP  
MAX  
+500  
+500  
UNITS NOTES  
IL  
ILO  
µA  
µA  
mA  
mA  
k  
5
5
Output Leakage  
Output Current at 2.4V  
Output Current at 0.4V  
IOH  
IOL  
-1  
+2  
40  
ZRST  
10  
1
RST Input Resistance  
DQ Input Resistance  
CLK Input Resistance  
Active Current  
ZDQ  
ZCLK  
ICC1  
ICC2  
IRST  
10  
10  
40  
40  
6
kΩ  
kΩ  
1
1
mA  
mA  
mA  
8
8
Standby Current  
2.5  
2
7, 8, 13  
RST Current  
CAPACITANCE  
(TA = +25°C)  
UNITS NOTES  
PARAMETER  
SYMBOL  
CIN  
MIN  
TYP  
MAX  
Input Capacitance  
Output Capacitance  
5
7
pF  
pF  
COUT  
6 of 7  
DS1200  
AC ELECTRICAL CHARACTERISTICS  
(0ºC to +70ºC; VCC = 5V ± 10%)  
PARAMETER  
Data to CLK Setup  
SYMBOL  
MIN  
35  
TYP  
MAX  
UNITS NOTES  
tDC  
ns  
ns  
3, 9  
3, 9  
Data to CLK Hold  
Data to CLK Delay  
CLK Low Time  
CLK High Time  
CLK Frequency  
CLK Rise and Fall  
40  
tCDH  
tCDD  
tCL  
125  
ns  
3, 4, 6, 9  
3, 9  
125  
125  
DC  
ns  
tCH  
fCLK  
tR, tF  
tCC  
ns  
3, 9  
4.0  
MHz  
ns  
3, 9  
500  
9
1
µs  
3, 9  
RST to Clock Setup  
CLK to RST Hold  
tCCH  
40  
ns  
ns  
3, 9  
tCWH  
125  
3, 9, 14  
RST Inactive Time  
RST to I/O High-Z  
tCDZ  
50  
ns  
3, 9  
NOTES:  
1) All voltages and resistances are referenced to ground.  
2) Input levels apply to CLK, DQ, and RST while VCC is not connected to the tag, then RST input  
reverts to VIHE  
.
3) Measured at VIH = 2.0 or VIL = 0.8V and 10ns maximum rise and fall time.  
4) Measured at VOH = 2.4V and VOL = 0.4V.  
5) For CLK, DQ, RST , and VCC at 5V.  
6) Load capacitance = 50pF.  
7) Applies to RST when VCC < 3.8V.  
8) Measured with outputs open.  
9) Measured at VIH of RST greater than or equal to 3.8V when RST supplies power.  
10) Logic 1 maximum is VCC + 0.3V if the VCC pin supplies power and RST +0.3V if the RST pin  
supplies power.  
11) RST logic 1 maximum is VCC + 0.3V if the VCC pin supplies power and 5.5V maximum if RST  
supplies power.  
12) Each DS1200 is marked with a four-digit date code AABB. AA designates the year of manufacture.  
BB designates the week of manufacture. The expected tDR is defined as starting at the date of  
manufacture.  
13) Average AC RST current can be determined using the following formula:  
I
TOTAL = 2 + ILOAD DC + (4 x 10-3)(CL + 140)f  
I
TOTAL and ILOAD are in mA; CL is in pF; f is in MHz.  
Applying the above formula, a load capacitance of 50pF running at a frequency of 4.0MHz gives an  
TOTAL current of 5mA.  
I
14) When RST is supplying power, tCWH must be increased to 100ms.  
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