EM128L08N [ETC]
128Kx8 Bit Ultra-Low Power Asynchronous Static RAM; 128Kx8位超低功耗异步静态RAM
| 型号： | EM128L08N |
| 厂家： | 
ETC |
| 描述： | 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM |
| 文件： | 总7页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NanoAmp Solutions, Inc.
EM128L08
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
Advance Information
EM128L08 Family
128Kx8 Bit Ultra-Low Power Asynchronous Static RAM
Overview
Features
The EM128L08 is an integrated memory device
containing a low power 1 Mbit Static Random
Access Memory organized as 131,072 words by 8
bits. The device is fabricated using NanoAmp’s
advanced CMOS process and high-speed/low-
power circuit technology. This device is designed
for very low voltage operation making it quite suit-
•
Wide Voltage Range:
2.3 to 3.6 Volts
•
Extended Temperature Range:
o
-40 to +85 C
•
•
•
Fast Cycle Time:
TACC < 55 ns @ 3.0V
Very Low Operating Current:
ICC < 10 mA typical at 3V, 10 Mhz
able for battery powered devices.
It is also
designed for both very low operating and standby-
currents. The device pinout is compatible with
other standard 128Kx8 SRAMs.
Very Low Standby Current:
o
ISB < 10 mA @ 55 C
•
32-PinTSOP, STSOP, PackagesAvailable
FIGURE 1: Typical Operating Current Curves
12.5
10.0
3.6 Volts
7.5
5.0
2.5
0.0
2.3 Volts
0
2.5
5.0
7.5
10.0
12.5
15.0
Operating Frequency (Mhz)
Stock No. 23033-A
Advance Information - Subject to Change Without Notice
1
EM128L08
NanoAmp Solutions, Inc.
Advance Information
FIGURE 1: Pin Configuration
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
A11
A9
1
2
3
4
5
A8
CE
D7
D6
D5
D4
D3
VSS
D2
D1
D0
A0
A1
A2
A3
A13
WE
CE2
A15
VCC
NC
6
EM128L08
STSOP, TSOP
7
8
9
A16
A14
A12
A7
10
11
12
13
14
15
16
A6
A5
A4
FIGURE 2: Functional Block Diagram
Input/
Output
Mux
Data I/O
D0 - D7
Address
Decode
Logic
Address
Inputs
A0 - A16
128K x 8
RAM Array
and
Buffers
CE
WE
OE
Control
Logic
TABLE 1: Pin Description
Pin Name
Pin Function
Pin Name
Pin Function
A0-A16
D0-D7
CE
Address Inputs
WE
VCC
VSS
NC
Write Enable (Active Low)
Data Inputs/Outputs
Power
Ground
Chip Enable (Active Low)
Output Enable (Active Low)
OE
Not Connected (Do not connect signal)
TABLE 2: Functional Description
CE1
CE2
WE
OE
D0-D7
MODE
POWER
H
X
L
L
L
X
L
X
X
L
X
X
X
L
High Z
High Z
Standby
Standby
Write
Standby
Standby
H
H
H
Data In
Data Out
High Z
Active -> Standby*
Active -> Standby*
Standby*
H
H
Read
H
Active
*The device will consume active power in this mode whenever addresses are changed
Stock No. 23033-A
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2
EM128L08
NanoAmp Solutions, Inc.
Advance Information
TABLE 3: Absolute Maximum Ratings*
Item
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Symbol
VIN,OUT
VCC
Rating
Unit
–0.3 to VCC+0.3
–0.3 to 4.0
500
V
V
PD
mW
oC
oC
oC
Storage Temperature
TSTG
TA
–40 to 125
-40 to +85
Operating Temperature
260 oC, 10sec(Lead only)
Soldering Temperature and Time
TSOLDER
*
Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 4: Operating Characteristics (Over specified Temperature Range)
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
VCC
VDR
VIH
VIL
Supply Voltage
2.3
3.6
V
V
Data Retention Voltage
Input High Voltage
Chip Disabled (Note 3)
1.8
3.6
0.7VCC
VCC+0.5
V
0.3VCC
Input Low Voltage
–0.5
V
VOH
VOL
ILI
IOH = 0.2mA
IOL = -0.2mA
VCC –0.2
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
V
0.2
0.5
0.5
V
VIN = 0 to VCC
mA
mA
ILO
OE= VIH or Chip Disabled
VCC=3.6 V, VIN=VIH or V
Chip Enabled, IOL = 0
Read/Write Operating Supply Cur-
rent @ 1 mS Cycle Time
IL
ICC1
ICC2
3.0
mA
mA
VCC=3.6 V, VIN=VIH or V
Read/Write Operating Supply Cur-
rent @ 70 nS Cycle Time
IL
14.0
Chip Enabled, IOL = 0
VIN = VCC or 0V
Chip Enabled, IOL = 0 f = 0,
tA= 85oC, VCC = 3.3 V
Read/Write Quiescent Operating
Supply Current (Note 1)
ICC3
20
10
mA
mA
VIN = VCC or 0V
Chip Disabled
tA= 55oC, VCC = 3.3V
Operating Standby Current
(Note 1)
ISB1
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 3.3V
Maximum Standby Current
(Note 1)
ISB2
20
10
mA
mA
Vcc = 2.0V, VIN = VCC or 0
Maximum Data Retention Current
(Note 1)
IDR
Chip Disabled, t = 85oC
A
Note 1. This device assumes a standby mode if either CE1 is disabled (high) or CE2 is disabled (low). It will also automatically go
into a standby mode whenever all input signals are quiescent (not toggling) regardless of the state of CE1 or CE2. In order
to achieve low standby current in the enabled mode (CE1 low and CE2 high), all inputs must be within 0.2 volts of either
V
or V
.
CC
SS
Stock No. 23033-A
Advance Information - Subject to Change Without Notice
3
EM128L08
NanoAmp Solutions, Inc.
Advance Information
TABLE 5: Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF
-40 to +85oC
Operating Temperature
TABLE 6: Timing
2.3 - 3.6 V
3.0 - 3.6 V
Item
Symbol
Units
Min.
Max.
Min.
Max.
tRC
tAA
Read Cycle Time
Address Access Time
70
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
70
25
55
55
20
tCO
tOE
tLZ
Chip Enable to Valid Output
Output Enable to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
10
5
10
5
tOLZ
tHZ
tOHZ
tOH
0
20
20
0
15
15
0
0
10
70
50
50
40
0
10
55
45
45
35
0
tWC
tCW
tAW
tWP
tAS
Chip Enable to End of Write
Address Valid to End of Write
Write Pulse Width
Address Setup Time
tWR
tWHZ
tDW
tDH
Write Recovery Time
0
0
Write to High-Z Output
20
15
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
40
0
35
0
tOW
5
5
ns
Stock No. 23033-A
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4
EM128L08
NanoAmp Solutions, Inc.
Advance Information
FIGURE 3: Read Cycle Timing (WE = V )
IH
tRC
A0-A16
tAA
tHZ
tCE
CE1/CE2
Enable Valid
tLZ
tOHZ
tOE
OE
tOLZ
tOH
D0-D7
Data Valid
FIGURE 4: Write Cycle Timing (OE clock)
tWC
A0-A16
OE
tWR
tAW
tCW
Enable Valid
tWP
CE1/CE2
WE
tWHZ
tAS
tDH
tDW
Data
Data In
tOHZ
tOW
High-Z
Data Out
Stock No. 23033-A
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5
EM128L08
NanoAmp Solutions, Inc.
Advance Information
FIGURE 5: Write Cycle Timing (OE fixed)
tWC
A0-A16
tWR
tAW
tCW
CE1/CE2
Enable Valid
tWP
tOH
tAS
WE
tDH
tDW
Data Valid
Data In
tWHZ
tOW
High-Z
Data Out
Stock No. 23033-A
Advance Information - Subject to Change Without Notice
6
EM128L08
NanoAmp Solutions, Inc.
Advance Information
TABLE 7: Ordering Information
Temperature
Range
Voltage
Range
Part Number
Package
Speed
EM128L08T
EM128L08N
32 pin TSOP
-40 to +85oC
-40 to +85oC
2.3 to 3.6 V
2.3 to 3.6 V
55 ns @ 3.0 V
55 ns @ 3.0 V
32 pin STSOP
TABLE 8: Revision History
Revision #
A
Date
Change Description
Initial Advance Release
Jan. 2001
Stock No. 23033-A
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7
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