EM620FT16GS-45LF
更新时间:2024-09-18 08:27:41
品牌:ETC
描述:128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
EM620FT16GS-45LF 概述
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM 128K X16位低功耗和低电压全CMOS静态RAM
EM620FT16GS-45LF 数据手册
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PDF下载EM620FV16B Series
Low Power, 128Kx16 SRAM
Document Title
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
History
Draft Date
Remark
0.0
Initial Draft
June 7, 2007
0.1
0.2
0.1 Revision
0.2 Revision
Remove BYTE option information
June 15, 2007
July 2, 2007
Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns),
tOE-55(30ns to 25ns), tWP-55(45ns to 40ns),
tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns),
ICC(2mA to 3mA), ICC1(2mA to 3mA)
0.3
0.3 Revision
VIH level change from 2.0V to 2.2V
Aug. 16, 2007
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM620FV16B Series
Low Power, 128Kx16 SRAM
128K x16 Bit Low Power and Low Voltage CMOS Static RAM
FEATURES
- Process Technology : 0.15µm Full CMOS
- Organization :128K x16
29
56
- Power Supply Voltage
=> EM620FV16B : 2.7~3.6V
- Low Data Retention Voltage : 1.5V
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
EM620FV16B (Dual C/S)
GENERAL PHYSICAL SPECIFICATIONS
- Backside die surface of polished bare silicon
- Typical Die Thickness = 725um +/-15um
- Typical top-level metallization :
+
(0.0)
=> Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms
- Topside Passivation :
=> Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms
EMLSI LOGO
- Wafer diameter : 8 inch
1
28
OPTIONS
y
- C1/W1 : DC Probed Die/Wafer @ Hot Temp
- C2/W2 : DC/AC Probed Die/Wafer @ Hot Temp
x
Pre-charge Circuit
A
A
A
A
A
A
A
A
A
A
V
0
1
2
3
4
5
6
7
8
9
CC
V
SS
Memory Array
1024 x 2048
PAD DESCRIPTIONS
Name
CS1,CS2
OE
Function
Name Function
Chip select inputs
Output Enable input
Write Enable input
Vcc
Vss
UB
Power Supply
Data
Cont
I/O0 ~ I/O7
I/O Circuit
Ground
Data
Cont
I/O8 ~ I/O15
Column Select
Upper Byte (I/O8~15
)
WE
Lower Byte (I/O0~7
No Connection
)
A0~A16
Address Inputs
LB
NC
A
A
A
A
A
A
A
13 14 15
16
11
10
12
I/O0~I/O15 Data Inputs/Outputs
WE
OE
UB
LB
Control Logic
CS1
CS2
BONDING INSTRUCTIONS
The 2M full CMOS SRAM die has total 56pads. Refer to the bond pad location and identification table for X, Y coordinates.
EMLSI recommends using a bond wire on back side of die onto Vss bond pad for improved noise immunity.
2
EM620FV16B Series
Low Power, 128Kx16 SRAM
FUNCTIONAL SPECIFICATIONS
There are 3 classifications for EMLSI die and wafers products, which are C1 and C2 for die and W1 and W2 for wafer, respectively.
Each die and wafer support dedicated characteristics and probe the electrical parameters within their specifications. Followings are
brief information for die and wafer classifications. Please refer to packaged specifications for more information but these parameters
are not guaranteed at bare die and wafer.
− C1 LEVEL DIE OR W1 LEVEL WAFER
The DC parameters are measured by specification for C1 level die or W1 level wafer. The DC parameters measured at 70°C tem-
perature, which called ‘Hot DC Sorting’ Other parameters are not guaranteed and warranted including device reliability. Please refer
to qualification report for device reliability and package level datasheets for electrical parameters.
− C2 LEVEL DIE OR W2 LEVEL WAFER
The DC parameters and selected AC parameters are measured with for C2 level die or W2 level wafer. The DC characteristics of C2
die and W2 wafer is tested based on DC specifications of C1 level die and W1 level wafer. The DC and specified AC parameters are
tested at 70°C temperature, which called ‘Hot DC & Selective AC Sorting’. Other parameters are not guaranteed and warranted
including device reliability. Please refer to qualification report for device reliability and package level datasheets for electrical param-
eters.
C2 level die and W2 level wafer probe following AC parameter.
− tRC, tAA, tCO
− tWC, tCW
PACKAGING
Individual device will be packed in anti-static trays.
− Chip Trays : A 2-inch square waffle style carrier for die with separate compartments for each die. Commonly referred to as a waffle
pack, each tray has a cavity size selected for the device that allows for easy loading and unloading and prevents
rotation. The tray itself is made of conductive material to reduce the danger of damage to the die from electrostatic
discharge. The chip carriers will be labeled with the following information :
− EMLSI wafer lot number
− EMLSI part number
− Quantity
− Jar Packing : Jar packing is made by EMLSI and used by many customers that we deliver the requested die as wafer. The pack is
consisted of clean paper to wrap the wafer, high cushioned sponge between wafers and hardly fragile plastic box with sponge. Each
pack has typically 24 wafers and then several packs are put into larger box depending on amounts of wafers.
Bond Pad #1 at Top
Die orientation in chip carriers
STORAGE AND HANDLING
EMLSI recommends the die stored in a controlled environment with filtered nitrogen. The carrier must be opened at ESD safe
environment when inspection and assembly.
3
EM620FV16B Series
Low Power, 128Kx16 SRAM
ABSOLUTE MAXIMUM RATINGS *
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Symbol
VIN, VOUT
VCC
Minimum
-0.2 to 4.0V
-0.2 to 4.0V
1.0
Unit
V
V
PD
W
oC
Operating Temperature
TA
-40 to 85
*
Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper-
ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
FUNCTIONAL DESCRIPTION
CS1
CS2
OE
WE
LB
UB
I/O0-7
I/O8-15
Mode
Power
H
X
X
L
L
L
L
L
L
L
L
X
L
X
X
X
H
H
L
X
X
X
H
H
H
H
H
L
X
X
H
L
X
X
H
X
L
High-Z
High-Z
High-Z
High-Z
High-Z
Data Out
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Deselected
Deselected
Stand by
Stand by
Stand by
Active
X
H
H
H
H
H
H
H
H
Deselected
Output Disabled
Output Disabled
Lower Byte Read
X
L
Active
H
L
Active
L
H
L
Data Out Upper Byte Read
Active
L
L
Data Out Data Out
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Active
X
X
X
L
H
L
Data In
High-Z
Data In
High-Z
Data In
Data In
Active
L
H
L
Active
L
L
Active
Note: X means don’t care. (Must be low or high state)
4
EM620FV16B Series
Low Power, 128Kx16 SRAM
1)
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Supply voltage
Symbol
Min
2.7
0
Typ
3.3
0
Max
3.6
0
Unit
VCC
V
Ground
VSS
VIH
V
V
VCC + 0.22)
0.6
Input high voltage
2.2
-
-
-0.23)
Input low voltage
VIL
V
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested
.
1)
o
CAPACITANCE (f =1MHz, T =25 C)
A
Item
Input capacitance
Symbol
Test Condition
Min
Max
Unit
CIN
CIO
VIN=0V
-
8
pF
Input/Ouput capacitance
VIO=0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
ILI
V
=V to V
SS CC
Input leakage current
-1
-1
-
-
-
-
1
1
3
uA
IN
CS1=V or CS2=V or OE=V or WE=V or LB=UB=V
IH
IL
IH
IL
IH
ILO
ICC
Output leakage current
Operating power supply
uA
V
=V to V
SS CC
IO
I
=0mA, CS1=V , CS2=WE=V , V =V or V
IL
mA
IO
IL
IH
IN
IH
Cycle time=1µs, 100% duty, I =0mA,
IO
ICC1
CS1<0.2V, LB<0.2V or/and UB<0.2V, CS2>V -0.2V,
CC
-
-
3
mA
mA
V
<0.2V or V >V -0.2V
IN CC
IN
45ns
55ns
70ns
-
-
-
-
-
-
-
-
35
30
25
0.4
Average operating current
Cycle time = Min, I =0mA, 100% duty,
IO
ICC2
CS1=V , CS2=V LB=V or/and UB=V
IL ,
IL
IH,
IL
V
I
=V or V
IN
IL
IH
VOL
VOH
ISB
= 2.1mA
Output low voltage
Output high voltage
Standby Current (TTL)
V
V
OL
I
= -1.0mA
2.4
-
-
-
-
OH
CS1=V , CS2=V , Other inputs=V or V
IL
0.3
mA
IH
IL
IH
CS1>V -0.2V, CS2>V -0.2V (CS1 controlled)
CC
CC
or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0~V
CC
11)
ISB1
Standby Current (CMOS)
LF
-
10
uA
o
(Typ. condition : V =3.3V @ 25 C)
CC
o
(Max. condition : V =3.6V @ 85 C)
CC
NOTES
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
5
EM620FV16B Series
Low Power, 128Kx16 SRAM
3)
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
VTM
2)
R1
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL1) = 100pF + 1 TTL
CL1) = 30pF + 1 TTL (only 45ns part)
1. Including scope and Jig capacitance
2)
R2
CL1)
2. R1=3070 ohm
3. VTM=2.8V
,
R2=3150 ohm
o
o
READ CYCLE (V =3.0 to 3.6V, Gnd = 0V, T = -40 C to +85 C)
cc
A
45ns
55ns
70ns
Max
Symbol
Parameter
Unit
Min
Max
Min
Max
Min
Read cycle time
tRC
tAA
tCO1, tCO2
tOE
45
-
55
-
70
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
-
-
-
45
45
25
45
-
-
-
-
55
55
25
55
-
-
-
-
70
70
35
70
-
Chip select to output
Output enable to valid output
UB, LB access time
tBA
Chip select to low-Z output
UB, LB enable to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
UB, LB disable to high-Z output
Output disable to high-Z output
Output hold from address change
t
LZ1, tLZ2
tBLZ
10
5
10
10
5
10
10
5
-
-
-
tOLZ
5
-
-
-
tHZ1, tHZ2
tBHZ
0
20
15
15
-
0
20
20
20
-
0
25
25
25
-
0
0
0
tOHZ
0
0
0
tOH
10
10
10
o
o
WRITE CYCLE (V =3.0 to 3.6V, Gnd = 0V, T = -40 C to +85 C)
cc
Parameter
Write cycle time
A
45ns
55ns
70ns
Unit
Symbol
Min
Max
Min
Max
Min
Max
tWC
tCW1, tCW2
tAS
45
-
-
55
-
-
70
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip select to end of write
Address setup time
45
0
45
0
60
0
-
-
-
-
Address valid to end of write
UB, LB valid to end of write
Write pulse width
tAW
45
45
35
0
-
45
45
40
0
-
60
60
50
0
-
tBW
-
-
-
tWP
-
-
-
Write recovery time
tWR
-
-
-
Write to ouput high-Z
tWHZ
tDW
0
15
0
20
0
20
Data to write time overlap
Data hold from write time
End write to output low-Z
25
0
25
0
30
0
tDH
-
-
-
-
-
-
tOW
5
5
5
6
EM620FV16B Series
Low Power, 128Kx16 SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1). (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL
)
tRC
Address
tAA
tOH
Previous Data Valid
Data Valid
Data Out
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
tRC
Address
tAA
tOH
tCO
CS1
CS2
tHZ
tBA
UB,LB
tBHZ
tOE
OE
tOHZ
tOLZ
High-Z
Data Out
Data Valid
tBLZ
tLZ
tWHZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
7
EM620FV16B Series
Low Power, 128Kx16 SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
tWC
Address
tCW(2)
tWR(4)
CS1
CS2
tAW
tBW
UB,LB
tWP(1)
WE
tDH
tAS(3)
tDW
High-Z
High-Z
Data in
Data Valid
tWHZ
tOW
Data out
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 CONTROLLED)
tWC
Address
t
AS(3)
tCW(2)
tWR(4)
CS1
CS2
tAW
tBW
UB,LB
tWP(1)
WE
tDH
tDW
Data in
Data Valid
High-Z
High-Z
Data out
8
EM620FV16B Series
Low Power, 128Kx16 SRAM
TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 CONTROLLED)
tWC
Address
tCW(2)
tWR(4)
CS1
t
AS(3)
CS2
WE
tAW
tWP(1)
tDH
tDW
Data in
Data Valid
High-Z
High-Z
Data out
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB CONTROLLED)
tWC
Address
tCW(2)
tWR(4)
CS1
CS2
tAW
tBW
UB,LB
tWP(1)
tAS(3)
WE
tDH
tDW
Data in
Data Valid
High-Z
High-Z
Data out
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS1 a high CS2 and low WE. A write begins at the lastest transition among CS1
goes low, CS2 goes high and WE goes low. A write ends at the earliest transition when CS1 goes high, CS2 goes high and WE
goes high. The tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the CS1 going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS1 or WE going high.
9
EM620FV16B Series
Low Power, 128Kx16 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
VCC for Data Retention
Symbol
VDR
Test Condition
Min
Typ2) Max
Unit
ISB1 Test Condition
(Chip Disabled) 1)
1.5
-
3.6
-
V
VCC=1.5V, ISB1 Test Condition
(Chip Disabled) 1)
IDR
Data Retention Current
-
0.5
µA
Chip Deselect to Data Retention Time
Operation Recovery Time
tSDR
tRDR
0
-
-
-
-
See data retention wave form
ns
tRC
NOTES
1. See the ISB1 measurement condition of data sheet page 5.
2. Typical value is measured at TA=25oC and not 100% tested.
DATA RETENTION WAVE FORM
tRDR
tSDR
Data Retention Mode
Vcc
3.0V
2.2V
VDR
CS1 > Vcc-0.2V
CS1
GND
Data Retention Mode
Vcc
3.0V
CS2
tRDR
tSDR
VDR
0.4V
CS2 < 0.2V
GND
10
EM620FV16B Series
Low Power, 128Kx16 SRAM
SRAM PART CODING SYSTEM
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
2. Product Type
3. Density
11. Power
10. Speed
4. Function
9. Package
8. Generation
7. Organization
5. Technology
6. Operating Voltage
1. Memory Component
7. Organization
EM --------------------- Memory
8 ---------------------- x8 bit
16 ---------------------- x16 bit
2. Product Type
6 ------------------------ SRAM
8. Generation
Blank ----------------- 1st generation
A ----------------------- 2nd generation
B ----------------------- 3rd generation
C ----------------------- 4th generation
D ----------------------- 5th generation
E ----------------------- 6th generation
F ----------------------- 7th generation
G ---------------------- 8th generation
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
4. Function
0 ----------------------- Dual CS
1 ----------------------- Single CS
9. Package
2 ----------------------- Multiplexed
Blank ---------------- KGD, 48&36FpBGA
S ---------------------- 32sTSOP1
T ---------------------- 32 TSOP1
U ---------------------- 44 TSOP2
3 ------------- Single CS / LBB, UBB(tBA=tOE)
4 ------------- Single CS / LBB, UBB(tBA=tCO)
5 ------------- Dual CS / LBB, UBB(tBA=tOE)
6 ------------- Dual CS / LBB, UBB(tBA=tCO)
10. Speed
5. Technology
F ------------------------- Full CMOS
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 ---------------------- 100ns
12 ---------------------- 120ns
6. Operating Voltage
T ------------------------- 5.0V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free & Green)
L ---------------------- Low Power
S ---------------------- Standard Power
11
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