ESAB33-02CS [ETC]
FAST RECOVERY DIODE; 快恢复二极管
| 型号： | ESAB33-02CS |
| 厂家： | 
ETC |
| 描述： | FAST RECOVERY DIODE |
| 文件： | 总3页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESAB33(CS) (5A)
(200V / 5A)
Outline drawings, mm
FAST RECOVERY DIODE
4.5±0.2
10+0.5
Ø3.6±0.2
0
1.32
2
1
3
1.2
0.4
0.8
2.54
2.7
5.08
J EDEC
EIAJ
TO-220AB
SC-46
Features
Soft recovery, low noise
High reliability
Connection diagram
Applications
High speed power switching
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings
Rating
Item
Symbol
VRRM
VRSM
IO
Conditions
Unit
V
-02
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current
200
200
V
5*
Square wave duty=1/2, Tc=110°C
Sine wave 10ms
A
IFSM
Tj
30
A
Operating junction temperature
Storage temperature
-40 to +150
-40 to +150
°C
°C
Tstg
*Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
VFM
Conditions
IFM=2.5A
Unit
V
Max.
1.4
Forward voltage drop
Reverse current
IRRM
VR=VRRM
µA
100
100
45
IF=0.1A, IR=0.1A
Reverse recovery time
Thermal resistance
trr
ns
IF=0.1A, IR=0.2A, Irec=0.05A
Rth(j-c)
junction to case
°C/W
5.0
ESAB33(CS)(5A)
(200V / 5A )
Characteristics
Reverse characteristics
Forward characteristics
100
10
10
5
3
IR
IF
[µA]
[A]
1
1.0
0.5
0.1
0.05
0.1
0
100
200
VR [V]
300
0
0.4
0.8 1.2 1.6 2.0
VF [V]
2.4 2.8
Forward power dissipation
Output current-case temperature
7
6
5
4
3
2
1
0
160
140
120
100
80
Tc
WF
[°C]
[W]
60
40
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Io [A]
Io [A]
Junction capacitance characteristics
Surge capability
100
30
10
50
30
Cj
IFSM
[A]
[pF]
5
3
10
5
3
1
1
3
5
10
30
5
10
30
50
100
200
VR [V]
[time] (at 50Hz)
ESAB33(CS)(5A)
(200V / 5A )
Transient thermal impedance
101
[°C/W]
100
10-1
10-3
10-2
10-1
100
101
102
t [sec.]
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