select brandShort,logo,brand from pdf_brand where id=2 limit 1 FD200R12KF-K_技术文档

FD200R12KF-K [ETC]

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048 ; 晶体管| IGBT | N -CHAN | 1.2KV V( BR ) CES | 200A I(C ) | M : HL093HW048\n
FD200R12KF-K
型号: FD200R12KF-K
厂家: ETC    ETC
描述:

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048
晶体管| IGBT | N -CHAN | 1.2KV V( BR ) CES | 200A I(C ) | M : HL093HW048\n

晶体 晶体管 双极性晶体管 斩波器 局域网
文件: 总1页 (文件大小:218K)
中文:  中文翻译
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相关型号:

FD200R12KL-K

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048

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ETC

FD200R12PT4B6BOSA1

Insulated Gate Bipolar Transistor

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INFINEON

FD200R12PT4_B6

Insulated Gate Bipolar Transistor

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INFINEON

FD200R65KF1-K

SCALE High Voltage IGBT Driver

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ETC

FD200R65KF1KNOSA1

Insulated Gate Bipolar Transistor, 400A I(C), 6300V V(BR)CES, N-Channel, MODULE-7

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INFINEON

FD200R65KF2-K

IGBT-Module

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INFINEON

FD200R65KF2KNOSA1

Insulated Gate Bipolar Transistor, 800A I(C), 6300V V(BR)CES, N-Channel, MODULE-9

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INFINEON

FD200S04A5B

Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2

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VISHAY

FD200S04A5F

Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2

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VISHAY

FD200S04A5P

Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2

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VISHAY

FD200S04A5R

Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2

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VISHAY

FD200S06A5B

Rectifier Diode, 1 Element, 600V V(RRM),

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VISHAY

FD200S06A5P

Rectifier Diode, 1 Element, 600V V(RRM),

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VISHAY

FD200S06A5R

Rectifier Diode, 1 Element, 600V V(RRM),

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VISHAY

FD2046

10 BASE-T, SIL FILTER (WITH 2 COMMON CHOKE)

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BOTHHAND

FD2046LF

10 BASE-T, SIL FILTER(WITH 2 COMMON CHOKE) APPLY TO GENERIC IC

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BOTHHAND

FD20C1

1.3mm /1.1mm Ceramic Surface Mount Crystals

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CALIBER

FD20C3

1.3mm /1.1mm Ceramic Surface Mount Crystals

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CALIBER

FD20C340.000MHZ

Parallel - 3Rd Overtone Quartz Crystal, 40MHz Nom,

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CALIBER

FD20C350.000MHZ

Parallel - 3Rd Overtone Quartz Crystal, 50MHz Nom

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CALIBER