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FF100R10KN [ETC]

TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 ; 晶体管| IGBT | N -CHAN |双| 1KV V（ BR ） CES | 100A I（C ） | M ： HL093HW048\n
FF100R10KN
元器件型号： FF100R10KN
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
晶体管| IGBT | N -CHAN |双| 1KV V（ BR ） CES | 100A I（C ） | M ： HL093HW048\n

晶体 晶体管 双极性晶体管
PDF文件： 总1页 (文件大小：53K)
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型号参数：FF100R10KN参数
 查看货源

FF100R12KF

 TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048

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57 ETC

FF100R12KF2

 TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048

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21 ETC

FF100R12KL

 TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048

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13 ETC

FF100R12KS4

 IGBT 100A 1200V

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372 EUPEC

FF100R12KS4

 62mm C-Series module with the fast IGBT2 for high-frequency switching

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188 INFINEON

FF100R12KS4HOSA1

 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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1 INFINEON

FF100R12MT4

 EconoDUAL?2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

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71 INFINEON

FF100R12MT4BOMA1

 Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel, MODULE-10

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0 INFINEON

FF100R12RT4

 34mm Module with fast Trench/Feldstopp IGBT4 and Emitter Controlled 4 diode

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288 INFINEON

FF100R12YT3

 IGBT-modules

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40 EUPEC

FF100R12YT3_B60

 Insulated Gate Bipolar Transistor,

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1 INFINEON

FF-1069A-3B

 Operating voltage = 125 / 250 Vac Operating current = 3 Amps

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15 JMK

FF-10Z

 General Purpose

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38 PREMO

FF-1135-1

 Operating Voltage= 100 Vdc OperatingCurrentMax= 1,2,3,5 & 10amps

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44 JMK

FF-1135-10

 Operating Voltage= 100 Vdc OperatingCurrentMax= 1,2,3,5 & 10amps

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13 JMK
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