FF200R12KF2 [ETC]

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HD5.6 ; 晶体管| IGBT | N -CHAN |双| 1.2KV V（ BR ） CES | 200A I（C ） | M ： HL093HD5.6\n

FF200R12KF2


型号：	FF200R12KF2
厂家：	ETC
描述：	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1.2KV V(BR)CES \| 200A I(C) \| M:HL093HD5.6 晶体管\| IGBT \| N -CHAN \|双\| 1.2KV V（ BR ） CES \| 200A I（C ） \| M ： HL093HD5.6\n 晶体晶体管双极性晶体管局域网
文件：	总2页 (文件大小：96K)
下载：	下载PDF数据表文档文件

FF200R12KL

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048

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27 ETC

FF200R12KS4

62mm C-Series module with the fast IGBT2 for high-frequency switching

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314 INFINEON

FF200R12KS4

Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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31 INFINEON

FF200R12KS4HOSA1

Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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1 INFINEON

FF200R12KT4

Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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58 INFINEON

FF200R12KT4HOSA1

Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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8 INFINEON

FF200R17KE3

62mm C-series module with trench/fieldstop IGBT and EmCon diode

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107 EUPEC

FF200R17KE3

IGBT-Modules

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229 EUPEC

FF200R17KE3_07

62mm C-series module with trench/fieldstop IGBT and EmCon diode

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12 EUPEC

FF200R17KE3HOSA1

Insulated Gate Bipolar Transistor, 390A I(C), 1700V V(BR)CES, N-Channel, MODULE-7

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3 INFINEON

FF200R17KE4

62mm C-Series module with fast trench/fieldstop IGBT4 and Emitter Controlled 4 diode

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99 INFINEON

FF200R17KE4HOSA1

Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7

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0 INFINEON

FF200R33KF2C

IGBT-inverter

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247 EUPEC

FF200R33KF2CNOSA1

Insulated Gate Bipolar Transistor, 330A I(C), 3300V V(BR)CES, N-Channel, MODULE-8

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25 INFINEON

FF200R33KF2V

IGBT Module

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122 ETC

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