首页 |元器件品牌

FF6R12K4 [ETC]

IGBT Module ; IGBT模块\n
FF6R12K4
型号： FF6R12K4
厂家： ETC    ETC
描述：

IGBT Module
IGBT模块\n

双极性晶体管
文件： 总4页 (文件大小：187K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
European Power-  
Semiconductor and  
Electronics Company  
GmbH + Co. KG  
Marketing Information  
FF 600 R 12 KF 4  
55,2  
11,85  
M8  
screwing depth  
max. 8  
130  
31,5  
114  
E1  
C2  
C1  
E2  
E2  
G2  
E1  
C1  
C2  
G1  
16 18  
7
M4  
40  
53  
44  
57  
28  
2,5 deep  
2,5 deep  
screwing depth  
max. 8  
E1  
C2  
E1  
C2  
G2  
E2  
G1  
C1  
E2  
C1  
A13/97 Mod-E/ 13.Jan 1998 G.Schulze  
FF 600 R 12 KF 4  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
Kollektor-Dauergleichstrom  
Periodischer Kollektor Spitzenstrom  
Gesamt-Verlustleistung  
collector-emitter voltage  
VCES  
IC  
1200 V  
600 A  
DC-collector current  
repetitive peak collctor current  
total power dissipation  
gate-emitter peak voltage  
DC forward current  
tp=1 ms  
ICRM  
Ptot  
VGE  
IF  
1200 A  
3900 W  
± 20 V  
600 A  
tC=25°C, Transistor /transistor  
Gate-Emitter-Spitzenspannung  
Dauergleichstrom  
Periodischer Spitzenstrom  
Isolations-Prüfspannung  
repetitive peak forw. current  
insulation test voltage  
tp=1ms  
IFRM  
VISOL  
1200 A  
2,5 kV  
RMS, f=50 Hz, t= 1 min.  
Charakteristische Werte / Characteristic values: Transistor  
min.  
typ.  
2,7  
3,3  
5,5  
45  
max.  
3,2 V  
3,9 V  
6,5 V  
- nF  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
iC=600A, vGE=15V, tvj=25°C  
iC=600A, vGE=15V, tvj=125°C  
iC=24mA, vCE=vGE, tvj=25°C  
fO=1MHz,tvj=25°C,vCE=25V, vGE=0V  
vCE=1200V, vGE=0V, tvj=25°C  
vCE=1200V, vGE=0V, tvj=125°C  
vCE=0V, vGE=20V, tvj=25°C  
vCE=0V, vEG=20V, tvj=25°C  
vCE sat  
-
-
Gate-Schwellenspannung  
Eingangskapazität  
gate threshold voltage  
input capacity  
vGE(th)  
Cies  
4,5  
-
-
-
-
-
-
-
-
-
-
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
iCES  
8
- mA  
- mA  
400 nA  
400 nA  
- µs  
50  
Gate-Emitter Reststrom  
Emitter-Gate Reststrom  
Einschaltzeit (induktive Last)  
gate leakage current  
iGES  
iEGS  
-
gate leakage current  
-
turn-on time (inductive load)  
iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj= 25°C ton  
iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj=125°C  
iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj= 25°C ts  
iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj=125°C  
iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj= 25°C tf  
iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj=125°C  
0,7  
0,8  
0,9  
1,0  
0,10  
0,15  
- µs  
Speicherzeit (induktive Last)  
Fallzeit (induktive Last)  
storage time (inductive load)  
fall time (inductive load)  
- µs  
- µs  
- µs  
- µs  
Einschaltverlustenergie pro puls  
Abschaltverlustenergie pro Puls  
turn-on energie per pulse  
turn-off energie loss per pulse  
iC=600A, vCE=600V, Ls=70nH  
vL=±15V, RG=1,6 , tvj=125°C  
iC=600A, vCE=600V, Ls=70nH  
vL=±15V, RG=1,6 , tvj=125°C  
Eon  
-
-
90  
90  
- mWs  
- mWs  
Eoff  
Charakteristische Werte / Characteristic values  
Inversdiode / Inverse diode  
Durchlaßspannung  
Rückstromspitze  
forward voltage  
iF=600A, vGE=0V, tvj=25°C  
vF  
-
-
2,2  
2,0  
2,7 V  
iF=600A, vGE=0V, tvj=125°C  
iF=600A, vRM=600V, vEG = 10V  
-diF/dt = 3,0 kA/µs, tvj = 25°C  
-diF/dt = 3,0 kA/µs, tvj = 125°C  
iF=600A, vRM=600V, vEG = 10V  
-diF/dt = 3,0 kA/µs, tvj = 25°C  
-diF/dt = 3,0 kA/µs, tvj = 125°C  
2,5 V  
peak reverse recovery current  
recovered charge  
IRM  
-
-
200  
350  
- A  
- A  
Sperrverzögerungsladung  
Qr  
-
-
25  
75  
- µAs  
- µAs  
Thermische Eigenschaften / Thermal properties  
Innerer Wärmewiderstand  
thermal resistance, junction to case Transistor / transistor, DC  
RthJC  
0,016 °C/W  
0,032 °C/W  
0,032 °C/W  
0,064 °C/W  
0,008 °C/W  
0,016 °C/W  
150 °C  
Transistor,DC,pro Zweig/per arm  
Diode, DC, pro Modul/per module  
Diode, DC, pro Zweig/per arm  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink pro Modul / per Module  
pro Zweig / per arm  
RthCK  
Höchstzul. Sperrschichttemperatur  
Betriebstemperatur  
max. junction temperature  
operating temperature  
storage temperature  
pro Modul / per Module  
Transistor / transistor  
tvj max  
tc op  
tstg  
-40...+150 °C  
-40...+125 °C  
Lagertemperatur  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
internal insulation  
Seite / page  
1
AI2O3  
Innere Isolation  
Anzugsdrehmoment f. mech. Befestigung  
Anzugsdrehmoment f. elektr. Anschlüsse  
mounting torque  
terminals M6 / tolerance +/-15%  
terminals M4 / tolerance +/-15%  
terminals M8  
M1  
M2  
5 Nm  
terminal connection torque  
2 Nm  
8...10 Nm  
ca. 1500 g  
Gewicht  
weight  
G
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection  
tfg = 10 µs  
VCC = 750 V  
vL = ±15 V  
RGF = RGR = 1,6  
tvj = 125°C  
vCEM = 900 V  
iCMK1 5000 A  
iCMK2 4000 A  
v CEM  
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions  
= VCES - 20nH x |di /dt|  
c
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den  
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in  
combination with the belonging technical notes.  
FF 600 R12 KF4  
1200  
1000  
1200  
1000  
V
= 20 V  
GE  
15 V  
12 V  
i
i
C
C
[
]
[ ]  
A
A
10 V  
800  
600  
800  
600  
9 V  
8 V  
400  
200  
0
400  
200  
0
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
v
4.5  
5.0  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
[
]
V
[ ]  
V
CE  
v
FF600R12KF4  
FF600R12KF4  
CE  
Bild/Fig. 1  
Bild/Fig. 2  
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)  
Collector-emitter-voltage in saturation region (typical)  
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)  
Collector-emitter-voltage in saturation region (typical)  
V
= 15V  
t = 125 °C  
vj  
GE  
-----T = 25 °C  
vj  
___  
Tvj = 125 °C  
1400  
1200  
1200  
1000  
t
=
vj  
125 °C  
25 °C  
i
i
[
C
C
A
]
[
]
A
1000  
800  
600  
400  
200  
800  
600  
400  
200  
0
0
400  
600  
800  
5
6
7
8
9
10  
11  
12  
0
200  
1000  
v
1200  
1400  
[
V
]
[ ]  
V
CE  
v
FF600R12KF4  
FF600R12KF4  
GE  
Bild/Fig. 3  
Bild/Fig. 4  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
Rückwärts-Arbeitsbereich  
Reverse biased safe operating area  
t = 125 °C, v = v = 15 V, R = 1,6  
vj  
V
= 20 V  
CE  
LF LR  
G
FF 600 R12 KF4  
-1  
10  
1200  
1000  
Diode  
IGBT  
6
Z
(th)JC  
[°C/W]  
i
F
[
]
A
3
800  
600  
400  
2
-2  
10  
5
3
2
200  
0
-3  
10  
-3  
-2  
-1  
0
1
10  
2
4
10  
2
4
10  
2
4
10  
2
4
10  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
[ ]  
s
[
]
V
t
v
FF600R12KF4  
FF600R12KF4  
F
Bild/Fig. 5  
Bild/Fig. 6  
Transienter innerer Wärmewiderstand je Zweig (DC)  
Transient thermal impedance per arm (DC)  
Durchlaßkennlinie der Inversdiode (typisch)  
Forward characteristic of the inverse diode (typical)  
t
t
=
25 °C  
vj  
vj  
= 125 °C  

相关型号：

FF6R16KF

 IGBT Module
ETC

FF6S

 Surface Mount Glass Passivated Fast Recovery Rectifier
GOOD-ARK

FF7

 Surface Mount Glass Passivated Fast Recovery Rectifier
GOOD-ARK

FF7-25A-R15

 Card Edge Connector
DDK

FF750R12ME7_B11

 PressFIT
INFINEON

FF750R17ME7D_B11

 PressFIT
INFINEON

FF75R06KF

 TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 75A I(C) | M:HL080HD5.3
ETC

FF75R06KF2

 TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 75A I(C) | M:HL080HD5.3
ETC

FF75R06KF3

 TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 75A I(C) | M:HL080HD5.3
ETC

FF75R06KL2

 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 75A I(C)
ETC

FF75R10K

 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | MODULE-S
ETC

FF75R10KF2

 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL080HD5.3
ETC
©2020 ICPDF网 联系我们和版权申明