FLM0910-12F [ETC]

X-Band Internally Matched FET; X波段内部匹配型场效应管


型号：	FLM0910-12F
厂家：	ETC
描述：	X-Band Internally Matched FET X波段内部匹配型场效应管晶体晶体管 CD 放大器局域网
文件：	总5页 (文件大小：183K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FLM0910-12F

X-Band Internally Matched FET

FEATURES

・High Output Power: P1dB=40.5dBm(Typ.)

・High Gain: G1dB=7.0dB(Typ.)

・High PAE: ηadd=25%(Typ.)

・Broad Band: 9.5~10.5GHz

・Impedance Matched Zin/Zout = 50Ω

・Hermetically Sealed Package

DESCRIPTION

The FLM0910-12F is a power GaAs FET that is internally matched

for standard communication and radar bands to provide optimum

power and gain in a 50Ω system.

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^°C)

Item

Symbol

Rating

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

VGS

PTot

Tstg

Tch

-5

57.6

-65 to +175

175

^oC

RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^°C)

Item

Symbol

VDS

Unit

Condition

Limit

≤10

DC Input Voltage

Gate Current

RG=50Ω

IGS

≤32.0

≥-5.6

IGR

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^°C)

Limit

Typ.

6.0

5000

-1.5

Test Conditions

Item

Symbol

Unit

Max.

9.0

Min.

VDS=5V, VGS=0V

Drain Current

Transconductance

Pinch-off Voltage

Gate-Source Breakdown Voltage

IDSS

VDS=5V, IDS=3.6A

VDS=5V, IDS=300mA

IGS=-340uA

-0.5

-5.0

39.5

-3.0

VGSO

P1dB

Output Power at 1dB G.C.P.

40.5

7.0

dBm

VDS=10V

G1dB

Idsr

Power Gain at 1dB G.C.P.

Drain Current

6.0

f=9.5 - 10.5 GHz

IDS=0.5Idss (typ.)

Zs=ZL=50Ω

3.5

4.5

Power-added Efficiency

Gain Flatness

ηadd

∆G

1.2

Thermal Resistance

Channel Temperature Rise

CASE STYLE: IB

C/W

Channel to Case

10V X Idsr X Rth

2.3

2.6

Rth

∆Tch

G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level

Note:RF-Test is measured with Vgs-Constant Circuit.

ESD

Class Ⅲ

2000Vꢀ~

Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)

Edition 1.2

September 2004

FLM0910-12F

X-Band Internally Matched FET

OUTPUT POWER , POWER ADDED EFFICIENCY

vs. INPUT POWER

POWER DERATING CURVE

Vds=10V, Ids=0.5IDSS

Pout

P.A.E.

100

150

200

Case Temperature [degree C]

20 22 24 26 28 30 32 34 36

Input power [dBm]

OUTPUT POWER vs. INPUT POWER

Vds=10V, Ids=0.5IDSS

Pin=35dBm

Pin=33dBm

Pin=30dBm

Pin=26dBm

Pin=22dBm

9.5

10.5

Input power[dBm]

P1dB

FLM0910-12F

X-Band Internally Matched FET

■ S-PARAMETER

+90°

+50j

+100j

+25j

10.5

9.5GHz

+250j

+10j

10.5

9.5GHz

±180°

0°

∞

9.5GHz

Scale for |S₂₁|

10.5

9.5GHz

10.5

-250j

-10j

0.2

-25j

-100j

0.4

-90°

S11

S22

S12

S21

-50j

VDS=10V, IDS=0.5Idss

S21

Freq

[GHz]

S11

S12

S22

MAG

ANG

MAG

2.54

ANG

MAG

0.02

ANG

MAG

ANG

36.41

9.0

0.66

133.64

121.51

109.11

96.79

84.51

71.65

59.03

46.37

32.92

19.89

4.99

-104.76

-116.04

-127.33

-138.32

-149.10

-160.11

-171.12

177.84

166.32

154.59

142.31

130.18

117.31

104.11

90.66

-117.97

-137.79

-150.61

-165.52

-175.45

173.89

162.66

153.39

141.50

130.54

119.17

107.91

95.66

0.25

9.1

9.2

0.62

0.59

0.56

0.54

0.52

0.50

0.48

0.45

0.43

0.40

0.38

0.34

0.30

0.28

2.53

2.52

2.51

2.52

2.54

2.56

2.59

2.61

2.63

2.65

2.61

2.57

2.49

2.40

2.28

2.14

2.00

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0.09

0.08

0.28

0.30

0.33

0.36

0.37

0.38

0.37

0.34

0.31

0.26

0.21

0.16

0.10

30.66

24.58

18.45

13.07

8.38

9.3

9.4

9.5

9.6

2.25

9.7

-4.55

9.8

-11.38

-17.87

-24.57

-32.73

-42.86

-55.55

-68.18

-84.69

9.9

10.1

10.2

10.3

10.4

10.5

10.6

10.7

10.8

10.9

-11.34

-30.15

-51.96

-77.26

84.09

70.62

0.28 -106.09

0.30 -133.91

0.35 -159.52

77.15

57.05

63.18

45.22

0.04 -134.34

49.45

31.57

0.08

0.14

0.20

0.25

134.77

113.53

100.70

85.90

0.41

0.47

0.53

179.35

162.12

147.13

35.59

20.35

21.90

6.54

8.89

-4.01

FLM0910-12F

X-Band Internally Matched FET

■ Package Out Line

Case Style : IB

Unit : mm

PIN ASSIGMENT

1 : GATE

2 : SOURCE

3 : DRAIN

4 : SOURCE

FLM0910-12F

X-Band Internally Matched FET

For further information please contact :

CAUTION

Eudyna Devices Inc. products contain gallium arsenide

(GaAs) which can be hazardous to the human body and the

environment. For safety, observe the following procedures:

Eudyna Devices USA Inc.

2355 Zanker Rd.

San Jose, CA 95131-1138, U.S.A.

TEL: (408) 232-9500

・Do not put these products into the mouth.

FAX: (408) 428-9111

・Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by-

products are dangerous to the human body if inhaled, ingested, or

swallowed.

www.us.eudyna.com

Eudyna Devices Europe Ltd.

Network House

・Observe government laws and company regulations when

discarding this product. This product must be discarded in

accordance with methods specified by applicable hazardous waste

procedures.

Norreys Drive

Maidenhead, Berkshire SL6 4FJ

United Kingdom

TEL: +44 (0) 1628 504800

FAX: +44 (0) 1628 504888

Eudyna Devices Inc. reserves the right to change products and

specifications without notice.The information does not convey any

license under rights of Eudyna Devices Inc. or others.

Eudyna Devices Asia Pte. Ltd.

Hong Kong Branch

Printed in U.S.A.

Rm.1101,Ocean Centre, 5 Canton Road

Tsim Sha Tsui, Kowloon, Hong Kong

TEL: +852-2377-0227

FAX: +852-2377-3921

Eudyna Devices Inc.

1000 Kamisukiahara, showa-cho

Nakakomagun, Yamanashi

409-3883, Japan

(Kokubo Industrial Park)

TEL +81-55-275-4411

FAX +81-55-275-9461

Sales Division

1, Kanai-cho, Sakae-ku

Yokohama,244-0845,Japan

TEL +81-45-853-8156

FAX +81-45-853-8170

相关型号：