FMMT560A [ETC]
;型号: | FMMT560A |
厂家: | ETC |
描述: |
|
文件: | 总247页 (文件大小:2448K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FMB1020.pdf
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FMBA56.pdf
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FMS2701.pdf
PRELIMINARY
August 1999
FM24C256
256 KBit 2-Wire Bus Interface
Serial EEPROM with Write Protect
General Description
Features
The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS
nonvolatile electrically erasable memory. These devices offer the
designer different low voltage and low power options. They
conform to all requirements in the Extended I2C™ 2-wire protocol.
Furthermore, they are designed to minimize device pin count and
simplify PC board layout requirements.
I Extended Operating Voltages
— C256: 4.5V - 5.5V
— C256L: 2.7V - 5.5V
— C256LZ: 2.7V - 5.5V
I Low Power CMOS
— 1mA active current typical
— C256/C256L: 10µA standby current typical
— C256LZ: less than 1µA standby current
I 2-wire I2C serial interface
The entire memory array can be disabled (Write Protection) by
connecting the WP pin to VCC
.
Functional address lines allow up to eight devices on the same
bus, for up to a total of 2 Mbit address space.
I 64 byte page write mode
I Max write cycle time of 6ms byte/page
I 40 years data retention
The I2C communication protocol uses CLOCK (SCL) and DATA
I/O (SDA) lines to synchronously clock data between the master
(forexampleamicroprocessor)andtheslaveEEPROMdevice(s).
I Endurance: 100,000 data changes
I Hardware write protect for entire array
I Schmitt trigger inputs for noise suppression
I Electrostatic discharge protection > 4000V
I 8-pin DIP and 8-pin SO (150 mil) packages
Fairchild EEPROMs are designed and tested for applications
requiring high endurance, high reliability, and low power con-
sumption.
Block Diagram
WRITE
LOCKOUT
V
CC
H.V. GENERATION
TIMING &CONTROL
WP
START CYCLE
START
STOP
SDA
LOGIC
CONTROL
LOGIC
SLAVE ADDRESS
REGISTER &
COMPARATOR
2
E
PROM
ARRAY
XDEC
SCL
LOAD
INC
A2
A1
A0
WORD
ADDRESS
COUNTER
R/W
YDEC
CK
D
OUT
DATA REGISTER
D
IN
DS800023-1
1
www.fairchildsemi.com
© 1999 Fairchild Semiconductor Corporation
FM24C256 rev. A.2
Connection Diagram
Dual-In-Line Package (N)
and 8-Pin SO Package (M8)
A0
A1
A2
1
2
3
4
8
7
6
5
V
CC
WP
FM24C256
FM24C256L
FM24C256LZ
SCL
SDA
V
SS
DS800023-2
Top View
See Package Number N08E and M08A
Pin Names
A0, A1, A2
VSS
Device Address Input
Ground
SDA
Data I/O
SCL
Clock Input
WP
Write Protect
Power Supply
VCC
Ordering Information
FM
24
C
XX
F
LZ
E
XX
Letter Description
Package
N
M8
8-pin DIP
8-pin SO8
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
SCL Clock Frequency
Density
Blank
F
100KHz
400KHz
256
C
256K with write protect
CMOS
Interface
24
IIC - 2 Wire
FM
Fairchild Non-Volatile
Memory
2
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FM24C256 rev. A.2
Absolute Maximum Ratings
Operating Conditions
Ambient Storage Temperature
–65°C to +150°C
Ambient Operating Temperature
FM24C256
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
FM24C256E
FM24C256V
6.5V to –0.3V
Lead Temperature
Positive Power Supply
FM24C256
(Soldering, 10 seconds)
+300°C
4.5V to 5.5V
2.7V to 5.5V
2.7V to 5.5V
FM24C256L
FM24C256LZ
ESD Rating
4000V min.
Standard VCC (4.5V to 5.5V) DC Electrical Characteristics
Symbol
Parameter
Test Conditions
Limits
Typ
Units
Min
Max
ICCA
Active Power Supply Current
fSCL = 100 kHz
fSCL = 400 kHz
0.5
1.0
mA
ISB
ILI
Standby Current
VIN = GND or VCC
VIN = GND to VCC
VOUT = GND to VCC
10
0.1
0.1
50
µA
µA
µA
V
Input Leakage Current
Output Leakage Current
Input Low Voltage
1
1
ILO
VIL
VIH
VOL
–0.3
VCC x 0.3
VCC + 0.5
0.4
Input High Voltage
Output Low Voltage
VCC x 0.7
V
IOL = 2.1 mA
V
Low VCC (2.7V to 5.5V) DC Electrical Characteristics
Symbol
Parameter
Test Conditions
Limits
Typ
Units
mA
Min
Max
ICCA
Active Power Supply Current
fSCL = 100 kHz
0.5
1.0
fSCL = 400 kHz
ISB
(Note 1)
Standby Current for L
Standby Current for LZ
VIN = GND or VCC = 4.5V - 5.5V
VIN = GND or VCC = 2.7V - 4.5V
VIN = GND or VCC = 4.5V - 5.5V
VIN = GND or VCC = 2.7V - 4.5V
10
1
10
0.1
50
10
50
1
µA
ILI
ILO
Input Leakage Current
Output Leakage Current
Input Low Voltage
VIN = GND to VCC
0.1
0.1
1
1
µA
µA
V
VOUT = GND to VCC
VIL
VIH
VOL
–0.3
VCC x 0.3
VCC + 0.5
0.4
Input High Voltage
VCC x 0.7
V
Output Low Voltage
IOL = 2.1 mA
V
Capacitance TA = +25°C, f = 1.0 MHz, VCC = 5V
Symbol
CI/O
Test
Conditions
VI/O = 0V
Max Units
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL)
8
6
pF
pF
CIN
VIN = 0V
Note 1: Typical values are for T = 25°C and nominal supply voltage (5V).
A
3
www.fairchildsemi.com
FM24C256 rev. A.2
AC Conditions of Test
Input Pulse Levels
VCC x 0.1 to VCC x 0.9
10 ns
Input Rise and Fall Times
Input & Output Timing Levels VCC x 0.5
Output Load
1 TTL Gate and CL = 100 pF
Read and Write Cycle Limits (Standard and Low VCC Range - 2.7V-5.5V)
Symbol
Parameter
100 kHz
Max
400 kHz
Max
Units
kHz
Min
Min
fSCL
TI
SCL Clock Frequency
100
100
3.5
400
Noise Suppression Time Constant at
SCL, SDA Inputs (Minimum VIN
Pulse width)
50
ns
tAA
SCL Low to SDA Data Out Valid
0.3
4.7
0.3
1.3
1.2
µs
µs
tBUF
Time the Bus Must Be Free before
a New Transmission Can Start
tHD:STA
tLOW
Start Condition Hold Time
Clock Low Period
4.0
4.7
4.0
4.7
0.6
1.5
0.6
0.6
µs
µs
µs
µs
tHIGH
Clock High Period
tSU:STA
Start Condition Setup Time
(for a Repeated Start Condition)
tHD:DAT
tSU:DAT
tR
Data in Hold Time
0
0
µs
ns
µs
ns
µs
ns
ms
Data in Setup Time
250
100
SDA and SCL Rise Time
SDA and SCL Fall Time
Stop Condition Setup Time
Data Out Hold Time
1
0.3
tF
300
300
tSU:STO
tDH
4.7
0.6
100
100
tWR
(Note 2)
Write Cycle Time - FM24C256
- FM24C256L, FM24C256LZ
6
6
6
6
Note 2: The write cycle time (tWR) is the time from a valid stop condition of a write sequence to the end of the internal erase/program cycle. During the write cycle, the
FM24C256 bus interface circuits are disabled, SDA is allowed to remain high per the bus-level pull-up resistor, and the device does not respond to its slave address
4
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FM24C256 rev. A.2
Bus Timing
t
t
R
F
t
HIGH
t
t
LOW
LOW
SCL
t
SU:STO
t
t
t
SU:DAT
SU:STA
HD:DAT
t
HD:STA
SDA
IN
t
BUF
t
AA
t
DH
SDA
OUT
Note 3: SCL = Serial Clock Data
DS800023-3
SDA = Serial Data I/O
BACKGROUND INFORMATION (I2C Bus)
SERIAL DATA (SDA)
As mentioned, the I2C bus allows synchronous bidirectional com-
munication between Transmitter/Receiver using the SCL (clock)
and SDA (Data I/O) lines. All communication must be started with a
valid START condition, concluded with a STOP condition and
acknowledgedbytheReceiverwithanACKNOWLEDGEcondition.
SDA is a bidirectional pin used to transfer data to and from the
device. It is an open drain output and may be wire-ORed with any
number of open drain or open collector outputs.
Device Address Inputs (A0, A1, A2)
In addition, since the I2C bus is designed to support other devices
such as RAM, EPROM, etc., the device type identifier string, or
control byte, must follow the START condition. For EEPROMs, the
first 4-bit of the control byte is 1010 binary for READ and WRITE
operations. This is then followed by the device selection bits A2, A1
and A0, and acts as the three most significant bits of the word
address.The final bit in the control byte determines the type of
operation performed (READ/WRITE). A "1" signifies a READ while
a"0"signifiesaWRITE.Thecontrolbyteisthenfollowedbytwobytes
that define the word address, which is then followed by the data byte.
The EEPROMs on the I2C bus may be configured in any manner
required, providing the total memory addressed does not exceed
512Kbits(64Kbytes). EEPROMmemoryaddressingiscontrolled
by hardware configuring the A2, A1, and A0 pins (Device Address
pins) with pull-up or pull-down resistors. ALL UNUSED PINS
MUST BE GROUNDED (tied to VSS).
Device address pins A0, A1, and A2 are connected to VCC or VSS
to configure the EEPROM address for multiple device configura-
tion. A total of eight different devices can be attached to the same
SDA bus.
Write Protection (WP)
If WP is tied to VCC, program WRITE operations onto the entire
array of the memory will not be executed. READ operations are
always available.
If WP is tied to VSS, normal memory operation is enabled for
READ/WRITE over the entire 256K bit memory array.
Thisfeatureallowstheusertoassigntheentirearrayofthememory
as ROM, which can be protected against accidental programming
writes. When WRITE is disabled, slave address and word address
will be acknowledged but data will not be acknowledged.
Addressing an EEPROM memory location involves sending a
command string with the following information:
Device Operation
The FM24C256xxx supports a bidirectional bus oriented protocol.
The protocol defines any device that sends data onto the bus as a
transmitter and the receiving devices as the receiver. The device
controlling the transfer is the master and the device that is con-
trolledistheslave.Themasterwillalwaysinitiatedatatransfersand
provide the clock for both transmit and receive operations. There-
fore, the FM24C256xxx is considered a slave in all applications.
[DEVICE TYPE]-[DEVICE ADDRESS]-[PAGE BLOCK AD-
DRESS]-[BYTE ADDRESS]
Pin Description
SERIAL CLOCK (SCL)
Definitions
CLOCK AND DATA CONVENTIONS
Data states on the SDA line can change only during SCL LOW.
SDA state changes during SCL HIGH and are reserved for
indication of start and stop conditions. Refer to Figures 1 and 2.
Word
Page
8 bits (byte) of data
64 sequential addresses (one byte each) that
may be programmed during a "Page Write"
programming cycle.
START CONDITION
All commands are preceded by the start condition, which is a
HIGH to LOW transition of SDA when SCL is HIGH. The
FM24C256xxx continuously monitors the SDA and SCL lines for
the start condition and will not respond to any command until this
condition has been met.
Master
Any I2C device CONTROLLING the transfer of
data (such as a microcontroller).
Slave
Device being controlled (EEPROMS are
always considered Slaves).
Transmitter
Receiver
Device currently SENDING data on the bus
(may be either a Master or Slave).
STOP CONDITION
All communications are terminated by a stop condition, which is a
LOW to HIGH transition of SDA when SCL is HIGH. The stop
condition is also used by the FM24C256xxx to place the device in
the standby power mode.
Device currently receiving data on the bus
(Master or Slave).
The SCL input is used to clock all data into and out of the device.
5
www.fairchildsemi.com
FM24C256 rev. A.2
both the device and a WRITE operation have been selected, the
FM24C256xxx will respond with an acknowledge after the receipt
of each subsequent eight bit word.
Write Cycle Timing
ACKNOWLEDGE
ACK (acknowledge) is a software convention used to indicate
successful data transfers. The transmitting device, either master or
slave,willreleasethebusaftertransmittingeightbits.Duringtheninth
clock cycle the receiver will pull the SDA line LOW to acknowledge
that it received the eight bits of data. Refer to Figure 3.
In the READ mode the FM24C256xxx slave will transmit eight bits
of data, release the SDA line and monitor the line for an acknowl-
edge. If an acknowledge is detected and no stop condition is
generated by the master, the slave will continue to transmit data.
If an acknowledge is not detected, the slave will terminate further
data transmissions and await the stop condition to return to the
standby power mode.
The FM24C256xxx device will always respond with an acknowl-
edge after recognition of a start condition and its slave address. If
Write Cycle Timing:
SCL
SDA
8th BIT
WORD n
ACK
t
WR
STOP
CONDITION
START
CONDITION
DS800023-4
Data Validity (Figure 1)
SCL
SDA
DATA
CHANGE
DATA STABLE
DS800023-5
Definition of Start and Stop (Figure 2)
SCL
SDA
START CONDITION
STOP CONDITION
DS800023-6
Acknowledge Response from Receiver (Figure 3)
SCL FROM
MASTER
1
8
9
Data Output
from Transmitter
Data Output
from Receiver
START
ACKNOWLEDGE
DS800023-7
6
www.fairchildsemi.com
FM24C256 rev. A.2
transfer by generating a stop condition, at which time the
FM24C256xxx begins the internal write cycle to the nonvolatile
memory. While the internal write cycle is in progress, the device's
inputsaredisabledandthedevicewillnotrespondtoanyrequests
from the master. Refer to Figure 5 for the address, acknowledge
and data transfer sequence.
DEVICE ADDRESSING
Following a start condition the master must output the address of
the slave it is accessing. The most significant four bits of the slave
address are those of the device type identifier. This is fixed as
1010 for all different FM24C256xxx devices.
The next three bits identify the device address. Address from 000
to 111 are acceptable thus allowing up to eight devices to be
connected to the I2C bus.
PAGE WRITE
The FM24C256xxx is capable of 64 byte page write operation. It
is initiated in the same manner as the byte write operation; but
instead of termination the write cycle after the first data word is
transfered, themastercantransmitupto63morewords. Afterthe
receipt of each word, the device responds with an acknowledge.
The last bit of the slave address defines whether a write or read
condition is requested by the master. A "1" indicates that a READ
operation is to be executed and a "0" initiates the WRITE mode.
A simple review: After the FM24C256xxx recognizes the start
condition, the device interfaced to the I2C bus waits for a slave
address to be transmitted over the SDA line. If the transmitted
slave address matches an address of one of the devices, the
designated slave pulls the line LOW with an acknowledge signal
and awaits further transmissions.
After the receipt of each word, the internal address counter
increments to the next address and the next SDA data is ac-
cepted. If the master should transmit more than 64 words prior to
generating the stop condition, the address counter will "roll over"
and the previous written data will be overwritten. As with the byte
write operation, all inputs are disabled until completion of the
internal write cycle. Refer to Figure 6 for the address, acknowl-
edge and data transfer sequence.
Write Operations
BYTE WRITE
For a WRITE operation, two additional address fields are required
afterthecontrolbyteacknowledge.Thesearethewordaddresses
and are comprised of fifteen bits to provide access to any one of
the 32K words. The first byte indicates the high-order byte of the
wordaddress. Onlythesevenleastsignicantbitscanbechanged,
themostsignificantbitispre-assignedthevalue"0". Followingthe
acknowledgement from the first word address, the next byte
indicates the low-order byte of the word address. Upon receipt of
the word address, the FM24C256xxx responds with another
acknowledge and waits for the next eight bits of data, again,
responding with an acknowledge. The master then terminates the
Acknowledge Polling
Once the stop condition is isssued to indicate the end of the host's
write operation, the FM24C256xxx initiates the internal write
cycle. ACK polling can be initiated immediately. This involves
issuingthestartconditionfollowedbytheslaveaddressforawrite
operation. If the FM24C256xxx is still busy with the write opera-
tion, noACKwillbereturned. Ifthedevicehascompletedthewrite
operation, an ACK will be returned and the host can then proceed
with the next read or write operation.
Byte Write (Figure 5)
S
S
SLAVE
ADDRESS
WORD
ADDRESS (1)
WORD
ADDRESS (0)
DATA
T
A
R
T
T
O
P
Bus Activity:
Master
1
0
1 0
0
SDA Line
A
C
K
A
C
K
A
C
K
A
C
K
Bus Activity
DS800023-8
7
www.fairchildsemi.com
FM24C256 rev. A.2
withtheR/Wbitsetto"1", themastermustfirstperforma"dummy"
write operation. The master issues a start condition, a slave
address, and then the word address to be read. After the word
address acknowledge, the master immediately reissues the start
conditionandtheslaveaddresswiththeR/Wbitsetto"1". Thiswill
be followed by an acknowledge from the FM24C256xxx and then
by theeightbit word. The master willnotacknowledge the transfer
but does generate the stop condition, and therefore the
FM24C256xxx discontinues transmission. Refer to Figure 8 for
the address, acknowledge, and data transfer sequence.
Write Protection
Programming of the memory array will not take place if the WP pin
is connected to VCC. The device will accept control and word
addresses; but if the memory accessed is write protected by the
WPpin, theFM24C256xxxwillnotgenerateanacknowledgeafter
the first byte of data has been received, and thus the program
cycle will not be started when the stop condition is asserted.
Read Operation
Read operations are initiated in the same manner as write
operations,withtheexceptionthattheR/Wbitoftheslaveaddress
is set to "1". There are three basic read operations: current
address read, random read and sequential read.
SEQUENTIAL READ
Sequential reads can be initiated as either a current address read
or random access read. The first word is transmitted in the same
manner as the other read modes; however, the master now
responds with an acknowledge, indicating it requires additional
data. The FM24C256xxx continues to output data for each ac-
knowledge received. The read operation is terminated by the
master not responding with an acknowledge or by generating a
stop condition.
CURRENT ADDRESS READ
Internally the FM24C256xxx contains an address counter that
maintains the address of the last word accessed, incremented by
one. Therefore, if the last access (either a read or write) was to
address n, the next read operation would access data from
address n+1. Upon receipt of the slave address with R/W set to
"1," the FM24C256xxx issues an acknowledge and transmits the
eight bit word. The master will not acknowledge the transfer but
does generate a stop condition, and therefore discontinues trans-
mission. Refer to Figure 7 for the sequence of address, acknowl-
edge and data transfer.
The data output is sequential, with the data from address n,
followedbythedatan+1. Theaddresscounterforreadoperations
increments all word address bits, allowing the entire memory
contents to be serially read during one operation. After the entire
memory has been read, the counter "rolls over" and the
FM24C256xxx continues to output data for each acknowledge
received. Refer to Figure 9 for the address, acknowledge, and
data transfer sequence.
RANDOM READ
Random read operations allow the master to access any memory
location in a random manner. Prior to issuing the slave address
Page Write (Figure 6)
S
S
SLAVE
ADDRESS
WORD
ADDRESS (1)
WORD
ADDRESS (0)
DATA n
DATA n+31
T
A
R
T
T
O
P
Bus Activity:
Master
1
0
1 0
0
SDA Line
A
C
K
A
C
K
A
C
K
A
C
K
Bus Activity
DS800023-9
8
www.fairchildsemi.com
FM24C256 rev. A.2
Current Address Read (Figure 7)
S
T
A
R
T
S
T
O
P
SLAVE ADDRESS
1 0 1 0
DATA
A
C
K
NO
DS800023-10
A
C
K
Random Read (Figure 8)
S
T
A
S
T
A
R
T
S
T
O
P
SLAVE
WORD
ADDRESS (1)
WORD
ADDRESS (0)
SLAVE
ADDRESS
Bus Activity:
R
DATA n
ADDRESS
Master
T
1
0
1 0
0
1 0 1 0
1 0
SDA Line
A
C
K
A
C
K
A
C
K
A
C
K
NO
A
C
K
Bus Activity
DS800023-11
Sequential Read (Figure 9)
S
T
A
R
T
S
T
O
P
SLAVE
ADDRESS
DATA n
DATA n + 1
DATA n + x
Bus Activity:
Master
1
0 1 0
SDA Line
A
C
K
A
C
K
A
C
K
A
C
K
NO
A
C
Bus Activity
K
DS800023-12
9
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FM24C256 rev. A.2
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
3
5
4
0.228 - 0.244
(5.791 - 6.198)
1
2
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Out-Line Package (M8)
Order Number FM24C256xxxM8 or FM24C256xxxEM8
Package Number M08A
10
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FM24C256 rev. A.2
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
0.009 - 0.015
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
(0.508)
Min
(0.229 - 0.381)
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Order Number FM24C256xxxN or FM24C256xxxEN
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
Deutsch
English
Français
Italiano
+49 (0) 8141-6102-0
+44 (0) 1793-856856
+33 (0) 1-6930-3696
+39 (0) 2-249111-1
2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
11
www.fairchildsemi.com
FM24C256 rev. A.2
December 1999
FM93C06
256-Bit Serial CMOS EEPROM
(MICROWIRE™ Bus Interface)
General Description
Features
The FM93C06 device is 256 bits of CMOS non-volatile electrically
erasable memory organized as 16x16 bit array. They are fabri-
cated using Fairchild Semiconductor's floating-gate CMOS pro-
cess for high reliability, high endurance and low power consump-
tion. These memory devices are available in an 8-pin SOIC or 8-
pin TSSOP package for small space considerations.
I Device status during programming mode
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I No erase required before write
I Reliable CMOS floating gate technology
I 2.7V to 5.5V operation in all modes
I MICROWIRE compatible serial l/O
I Self-timed programming cycle
I 40 years data retention
FM93C06 is compatible with MICROWIRE serial interface, which
offers simple interface to standard microcontrollers and micropro-
cessors. There are 7 instructions which control this device: Read,
WriteEnable, Erase, EraseAll, Write, WriteAll, andWriteDisable.
The ready/busy status is available on the DO pin to indicate the
completion of a programming cycle.
I Endurance: 1,000,000 data changes
I Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
I Schmitt Trigger inputs and VCC lockout to prevent data
corruption
Block Diagram
VCC
CS
SK
INSTRUCTION
DECODER
CONTROL LOGIC,
AND CLOCK
GENERATORS
INSTRUCTION
REGISTER
DI
HIGH VOLTAGE
GENERATOR
AND
ADDRESS
REGISTER
PROGRAM
TIMER
VPP
DECODER
1 OF 16
EEPROM ARRAY
16
READ/WRITE AMPS
16
VSS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
DS800024-1
1
© 1999 Fairchild Semiconductor Corporation
FM93C06
www.fairchildsemi.com
Connection Diagrams
Dual-In-Line Package (N),
8-Pin SO (M8) and 8-Pin TSSOP (MT8)
1
2
3
4
8
7
6
5
CS
SK
DI
VCC
NC
NC
DO
GND
DS800024-2
Top View
See Package Number
N08E, M08A and MTC08
Pin Names
CS
Chip Select
SK
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
GND
VCC
Power Supply
Ordering Information
FM
93
C
XX LZ
E
XX
Letter Description
Package
N
8-Pin DIP
M8
MT8
8-Pin SO8
8-Pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Density
06
256 bit
C
CMOS
CS
Data protect and sequential
read
Interface
93
MICROWIRE
FM
Fairchild Non-Volatile
Memory
2
www.fairchildsemi.com
FM93C06
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Storage Temperature
–65°C to +150°C
Ambient Operating Temperature
FM93C06
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
FM93C06E
FM93C06V
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
4.5V to 5.5V
2000V
DC and AC Electrical Characteristics 4.5V ≤ VCC ≤ 5.5V
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
Standby Current
CS = VIH, SK = 1MHz
CS = VIL
1
50
1
mA
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
2
0.8
VCC +1
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL = 2.1mA
IOH = -400 µA
0.4
0.2
1
V
V
2.4
VOL2
VOH2
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
V
V
VCC -0.2
0
fSK
SK Clock Frequency
SK High Time
(Note 3)
MHz
ns
tSKH
FM93C06
FM93C06E/V
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
tCS
Minimum CS
Low Time
(Note 4)
250
ns
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
50
70
ns
ns
ns
tDIS
FM93C06
FM93C06E/V
100
200
tCSH
tDIH
tPD
CS Hold Time
0
ns
ns
ns
ns
ns
ms
DI Hold Time
20
Output Delay
500
500
100
10
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
tWP
3
www.fairchildsemi.com
FM93C06
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Operating Temperature
Ambient Storage Temperature
–65°C to +150°C
FM93C06L/LZ
FM93C06LE/LZE
FM93C06LV/LZV
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
2.7V to 5.5V
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
CS = VIH, SK = 250KHz
CS = VIL
1
mA
Standby Current
L
LZ
10
1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8 VCC
0.15 VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
0.1 VCC
V
V
0.9 VCC
fSK
SK Clock Frequency
SK High Time
(Note 3)
0
1
250
KHz
µs
tSKH
tSKL
tSKS
SK Low Time
1
µs
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
0.2
µs
tCS
Minimum CS
Low Time
(Note 4)
1
µs
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
CS Hold Time
DI Hold Time
0.2
70
0.4
0
µs
ns
µs
ns
µs
µs
µs
µs
ms
tDIS
tCSH
tDIH
tPD
0.4
Output Delay
2
1
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
0.4
15
tWP
Note 1: Stressabovethoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditionsabovethoseindicatedintheoperationalsectionsofthespecificationisnotimplied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz (Note 5)
Note 2: Typical leakage values are in the 20nA range.
Symbol
COUT
Test
Typ Max Units
Note 3: TheshortestallowableSKclockperiod=1/fSK (asshownunderthefSK parameter). Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not
allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
Output Capacitance
Input Capacitance
5
5
pF
pF
CIN
Note 4: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all internal
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
.03V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
(Extended Voltage Levels)
1.0V
10µA
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93C06
Write (WRITE):
Functional Description
TheWRITEinstructionisfollowedbytheaddressand16bitsofdata
to be written into the specified address. After the last bit of data is
put in the data-in (DI) pin, CS must be brought low before the next
rising edge of the SK clock. This falling edge of the CS initiates the
self-timed programming cycle. The D0 pin indicates the READY/
The FM93C06device has7 instructionsas describedbelow. Note
that the MSB of any instruction is a “1” and is viewed as a start bit
in the interface sequence. The next 8 bits carry the op code and
the 6-bit address for register selection.
Read (READ):
BUSYstatusofthechipifCSisbroughthighafteraminimumoft
.
CS
D0 = logical 1 indicates that the register at the address specified in
theinstructionhasbeenwrittenwiththedatapatternspecifiedinthe
instruction and the part is ready for another instruction.
The READ instruction outputs serial data on the D0 pin. After a
READ instruction is received, the instruction and address are
decoded, followed by data transfer from the selected memory
register into a 16-bit serial-out shift register. A dummy bit (logical
0)precedesthe16-bitdataoutputstring. Outputdatachangesare
initiated by a low to high transition of the SK clock.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in
thememoryarrayandseteachbittothelogical“1”state.TheErase
All cycle is identical to the ERASE cycle except for the different op-
code. As in the ERASE mode, the DO pin indicates the READY/
BUSY status of the chip if CS is brought high after the tCS interval.
Write Enable (WEN):
When VCC is applied to the part, it 'powers-up' in the Write Disable
(WDS) state. Therefore, all programming modes must be pre-
ceded by a Write Enable (WEN) instruction. Once a Write Enable
instructionisexecuted,programmingremainsenableduntilaWrite
Disable (WDS) instruction is executed or VCC is removed from the
part.
Write All (WRALL):
The WRALL instruction will simultaneously program all registers
with the data pattern specified in the instruction. As in the WRITE
mode, the DO pin indicates the READY/BUSY status of the chip
Erase (ERASE):
if CS is brought high after the t interval.
CS
The ERASE instruction will program all bits in the specified
register to the logical “1” state. CS is brought low following the
loading of the last address bit. This falling edge of the CS pin
initiates the self-timed programming cycle.
Write Disable (WDS):
To protect against accidental data disturb, the WDS instruction
disables all programming modes and should follow all program-
ming operations. Execution of a READ instruction is independent
of both the WEN and WDS instructions.
The DO pin indicates the READY/BUSY status of the chip if CS is
broughthighafteraminimumtimeoftCS. DO=logical“0”indicates
that the register, at the address specified in the instruction, has
been erased, and the part is ready for another instruction.
Note: The Fairchild CMOS EEPROMs do not require an "ERASE" or "ERASE ALL"
operationpriortothe"WRITE"and"WRITEALL"instructions. The"ERASE"and"ERASE
ALL"instructionsareincludedtomaintaincompatibilitywithearliertechnologyEEPROMs.
Instruction Set for the FM93C06
Instruction
READ
SB
1
Op. Code
Address
00 A3 A2 A1 A0
11xxxx
Data
Comments
Reads data stored in memory, at specified address.
Write enable must precede all programming modes.
Erase selected register.
10
00
11
01
00
00
00
WEN
1
ERASE
WRITE
ERAL
1
00 A3 A2 A1 A0
1
00 A3 A2 A1 A0 D15-D0
10xxxx
Writes selected register.
1
Erases all registers.
WRALL
WDS
1
01xxxx
00xxxx
D15-D0
Writes all registers.
1
Disables all programming instructions.
Note:
Address bits A5 and A4 should be set to '0' for READ, ERASE and WRITE instructions.
x = Don't care
5
www.fairchildsemi.com
FM93C06
Timing Diagrams
Synchronous Data Timing
V
IH
CS
SK
V
t
IL
CSS
t
t
t
CSH
SKH
SKL
t
SKS
V
IH
V
IL
t
t
DIH
DIS
V
IH
DI
V
IL
t
PD
t
DF
t
DH
V
OH
DO (READ)
V
OL
t
SV
t
t
DF
DH
V
OH
DO (PROGRAM)
STATUS VALID
V
DS800024-4
OL
READ
CS
SK
DI
t
CS
. . .
1
1
0
0
0
A3
A0
. . .
DO
0
D15
D0
DS800024-5
WEN
CS
SK
DI
t
CS
. . .
1
0
0
1
1
X
X
DS800024-6
WDS
CS
SK
DI
tCS
. . .
1
0
0
0
0
X
X
DS800024-7
6
www.fairchildsemi.com
FM93C06
Timing Diagrams (Continued)
WRITE
CS
SK
t
CS
. . .
. . .
1
0
1
0
0
A3
A0
D15
D0
DI
DO
BUSY
READY
t
WP
DS800024-8
WRALL
CS
SK
DI
t
CS
. . .
1
0
0
0
1
DON'T CARE (4 BITS) D15
D0
DO
BUSY
READY
t
WP
DS800024-9
ERASE
t
CS
CS
SK
STANDBY
. . .
DI
1
1
1
0
0
A3
A0
HI-Z
HI-Z
DO
BUSY
READY
t
WP
DS800024-10
ERAL
t
CS
CS
STANDBY
SK
DI
1
0
0
1
0
DON'T CARE BITS (4 BITS)
HI-Z
HI-Z
DO
BUSY
READY
t
WP
DS800024-11
7
www.fairchildsemi.com
FM93C06
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Out-Line Package (M8)
Package Number M08A
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
8
www.fairchildsemi.com
FM93C06
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
3
5
4
0.092
(2.337)
Min
0.250 - 0.005
(6.35 0.127)
Pin #1 IDENT
+
Pin #1 IDENT
1
Option 1
1
2
Option 2
0.280
(7.112)
DIA
0.040
(1.016)
Typ.
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
Max.
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
+0.040
-0.015
NOM
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
Deutsch
English
Français
Italiano
+49 (0) 8141-6102-0
+44 (0) 1793-856856
+33 (0) 1-6930-3696
+39 (0) 2-249111-1
2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
9
www.fairchildsemi.com
FM93C06
December 1999
FM93C46
1K-Bit Serial CMOS EEPROM
(MICROWIRE™ Bus Interface)
General Description
Features
The FM93C46 device is 1024 bits of CMOS non-volatile electri-
cally erasable memory organized as 64x16 bit array. They are
fabricated using Fairchild Semiconductor's floating-gate CMOS
process for high reliability, high endurance and low power con-
sumption. These memory devices are available in an 8-pin SOIC
or 8-pin TSSOP package for small space considerations.
I Device status during programming mode
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I No erase required before write
I Reliable CMOS floating gate technology
I 2.7V to 5.5V operation in all modes
I MICROWIRE compatible serial l/O
I Self-timed programming cycle
I 40 years data retention
FM93C46 is compatible with MICROWIRE serial interface, which
offers simple interface to standard microcontrollers and micropro-
cessors. There are 7 instructions which control this device: Read,
WriteEnable, Erase, EraseAll, Write, WriteAll, andWriteDisable.
The ready/busy status is available on the DO pin to indicate the
completion of a programming cycle.
I Endurance: 1,000,000 data changes
I Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
I Schmitt Trigger inputs and VCC lockout to prevent data
corruption
Block Diagram
VCC
CS
SK
INSTRUCTION
DECODER
CONTROL LOGIC,
AND CLOCK
GENERATORS
INSTRUCTION
REGISTER
DI
HIGH VOLTAGE
GENERATOR
AND
ADDRESS
REGISTER
PROGRAM
TIMER
VPP
DECODER
1 OF 64
EEPROM ARRAY
READ/WRITE AMPS
VSS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
DS800025-1
1
© 1999 Fairchild Semiconductor Corporation
FM93C46
www.fairchildsemi.com
Connection Diagrams
Dual-In-Line Package (N),
8-Pin SO (M8) and 8-Pin TSSOP (MT8)
Rotated Die (93C46T)
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
CS
SK
DI
NC
VCC
NC
NC
GND
DO
DI
V
CC
NC
CS
DO
GND
SK
DS800025-2
DS800025-12
Top View
See Package Number N08E, M08A and MTC08
Pin Names
CS
Chip Select
SK
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
GND
VCC
Power Supply
Ordering Information
FM
93
C
XX
T
LZ
E
XX
Letter Description
Package
N
8-Pin DIP
M8
MT8
8-Pin SO8
8-Pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Blank
T
Normal Pin Out
Rotated Die Pin Out
Density
46
1K
C
CMOS
CS
Data protect and sequential
read
Interface
93
MICROWIRE
FM
Fairchild Non-Volatile
Memory
2
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FM93C46
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Storage Temperature
–65°C to +150°C
Ambient Operating Temperature
FM93C46
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
FM93C46E
FM93C46V
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
4.5V to 5.5V
2000V
Standard VCC (4.5V to 5.5V) DC and AC Electrical Characteristics
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
Standby Current
CS = VIH, SK = 1MHz
CS = VIL
1
50
1
mA
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
2
0.8
VCC +1
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL = 2.1mA
IOH = -400 µA
0.4
0.2
1
V
V
2.4
VOL2
VOH2
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
V
V
VCC -0.2
0
fSK
SK Clock Frequency
SK High Time
(Note 3)
MHz
ns
tSKH
FM93C46
FM93C46E/V
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
tCS
Minimum CS
Low Time
(Note 4)
250
ns
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
50
70
ns
ns
ns
tDIS
FM93C46
FM93C46E/V
100
200
tCSH
tDIH
tPD
CS Hold Time
0
ns
ns
ns
ns
ns
ms
DI Hold Time
20
Output Delay
500
500
100
10
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
tWP
3
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FM93C46
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Storage Temperature
–65°C to +150°C
Ambient Operating Temperature
FM93C46L/LZ
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
FM93C46LE/LZE
FM93C46LV/LZV
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
2.7V to 4.5V
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 4.5V unless otherwise specified
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
CS = VIH, SK = 250KHz
CS = VIL
1
mA
Standby Current
L
LZ
10
1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8 VCC
0.15 VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
0.1 VCC
V
V
0.9 VCC
fSK
SK Clock Frequency
SK High Time
(Note 3)
0
1
250
KHz
µs
tSKH
tSKL
tSKS
SK Low Time
1
µs
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
0.2
µs
tCS
Minimum CS
Low Time
(Note 4)
1
µs
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
CS Hold Time
DI Hold Time
0.2
70
0.4
0
µs
ns
µs
ns
µs
µs
µs
µs
ms
tDIS
tCSH
tDIH
tPD
0.4
Output Delay
2
1
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
0.4
15
tWP
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of the specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz (Note 5)
Note 2: Typical leakage values are in the 20nA range.
Symbol
COUT
Test
Typ Max Units
Note 3: The shortest allowable SK clock period = 1/fSK (as shown under the fSK parameter).
Maximum SK clock speed (minimum SK period) is determined by the interaction of several AC
parametersstatedinthedatasheet.WithinthisSKperiod,bothtSKH andtSKL limitsmustbeobserved.
Therefore,itisnotallowabletoset1/fSK =tSKHminimum +tSKLminimum forshorterSKcycletimeoperation.
Output Capacitance
Input Capacitance
5
5
pF
pF
CIN
Note 4: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all
internaldeviceregisters(devicereset)priortobeginninganotheropcodecycle. (Thisisshowninthe
opcode diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
.03V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
(Extended Voltage Levels)
1.0V
10µA
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93C46
Write (WRITE):
Functional Description
TheWRITEinstructionisfollowedbytheaddressand16bitsofdata
to be written into the specified address. After the last bit of data is
put in the data-in (DI) pin, CS must be brought low before the next
rising edge of the SK clock. This falling edge of the CS initiates the
self-timed programming cycle. The D0 pin indicates the READY/
The FM93C46device has7 instructionsas describedbelow. Note
that the MSB of any instruction is a “1” and is viewed as a start bit
in the interface sequence. The next 8 bits carry the op code and
the 6-bit address for register selection.
Read (READ):
BUSYstatusofthechipifCSisbroughthighafteraminimumoft
.
CS
D0 = logical 1 indicates that the register at the address specified in
theinstructionhasbeenwrittenwiththedatapatternspecifiedinthe
instruction and the part is ready for another instruction.
The READ instruction outputs serial data on the D0 pin. After a
READ instruction is received, the instruction and address are
decoded, followed by data transfer from the selected memory
register into a 16-bit serial-out shift register. A dummy bit (logical
0)precedesthe16-bitdataoutputstring. Outputdatachangesare
initiated by a low to high transition of the SK clock.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in
thememoryarrayandseteachbittothelogical“1”state.TheErase
All cycle is identical to the ERASE cycle except for the different op-
code. As in the ERASE mode, the DO pin indicates the READY/
BUSY status of the chip if CS is brought high after the tCS interval.
Write Enable (WEN):
When VCC is applied to the part, it 'powers-up' in the Write Disable
(WDS) state. Therefore, all programming modes must be pre-
ceded by a Write Enable (WEN) instruction. Once a Write Enable
instructionisexecuted,programmingremainsenableduntilaWrite
Disable (WDS) instruction is executed or VCC is removed from the
part.
Write All (WRALL):
The WRALL instruction will simultaneously program all registers
with the data pattern specified in the instruction. As in the WRITE
mode, the DO pin indicates the READY/BUSY status of the chip
Erase (ERASE):
if CS is brought high after the t interval.
CS
The ERASE instruction will program all bits in the specified
register to the logical “1” state. CS is brought low following the
loading of the last address bit. This falling edge of the CS pin
initiates the self-timed programming cycle.
Write Disable (WDS):
To protect against accidental data disturb, the WDS instruction
disables all programming modes and should follow all program-
ming operations. Execution of a READ instruction is independent
of both the WEN and WDS instructions.
The DO pin indicates the READY/BUSY status of the chip if CS is
broughthighafteraminimumtimeoftCS. DO=logical“0”indicates
that the register, at the address specified in the instruction, has
been erased, and the part is ready for another instruction.
Note: The Fairchild CMOS EEPROMs do not require an "ERASE" or "ERASE ALL"
operationpriortothe"WRITE"and"WRITEALL"instructions. The"ERASE"and"ERASE
ALL"instructionsareincludedtomaintaincompatibilitywithearliertechnologyEEPROMs.
Instruction Set for the FM93C46
Instruction
READ
SB
1
Op. Code
Address
A5-A0
Data
Comments
Reads data stored in memory, at specified address.
Write enable must precede all programming modes.
Erase selected register.
10
00
11
01
00
00
00
WEN
1
11xxxx
A5-A0
ERASE
WRITE
ERAL
1
1
A5-A0
D15-D0
D15-D0
Writes selected register.
1
10xxxx
01xxxx
00xxxx
Erases all registers.
WRALL
WDS
1
Writes all registers.
1
Disables all programming instructions.
x = Don't care.
5
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FM93C46
Timing Diagrams
Synchronous Data Timing
V
IH
CS
V
t
IL
CSS
t
t
t
CSH
SKH
SKL
t
SKS
V
IH
SK
V
IL
t
t
DIH
DIS
V
IH
DI
V
IL
t
PD
t
DF
t
DH
V
OH
DO (READ)
V
OL
t
SV
t
t
DF
DH
V
OH
DO (PROGRAM)
STATUS VALID
V
OL
DS800025-4
READ
CS
SK
DI
t
CS
. . .
1
1
0
A5
A0
. . .
DO
0
D15
D0
DS800025-5
WEN
CS
SK
DI
t
CS
. . .
1
0
0
1
1
X
X
DS800025-6
WDS
CS
SK
DI
tCS
. . .
1
0
0
0
0
X
X
DS800025-7
6
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FM93C46
Timing Diagrams (Continued)
WRITE
CS
SK
t
CS
. . .
1
0
1
A5
A0
D15
D0
DI
DO
BUSY
READY
t
WP
DS800025-8
WRALL
CS
SK
DI
t
CS
. . .
1
0
0
0
1
DON'T CARE (4 BITS) D15
D0
DO
BUSY
READY
t
WP
DS800025-9
ERASE
t
CS
CS
SK
STANDBY
. . .
DI
1
1
1
A5
A4
A3
A0
HI-Z
HI-Z
DO
BUSY
READY
t
WP
DS800025-10
ERAL
t
CS
CS
STANDBY
SK
DI
1
0
0
1
0
DON'T CARE BITS (4 BITS)
HI-Z
HI-Z
DO
BUSY
READY
t
WP
DS800025-11
7
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FM93C46
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Out-Line Package (M8)
Package Number M08A
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
8
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FM93C46
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
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Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
9
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FM93C46
January 2000
FM93C46A
1K-Bit Serial CMOS EEPROM
(MICROWIRE™ Synchronous Bus)
General Description
Features
The FM93C46A is 1024 bits of CMOS nonvolatile EEPROM
(Electrically Erasable Programmable Read Only Memory) with
MICROWIRE serial interface. FM93C46A can be configured for
either 64 x 16 bit or 128 x 8 bit array using an organization (ORG)
inputpin.ThisdeviceisfabricatedusingFairchildSemiconductor's
floating gate CMOS process for high reliability, high endurance
and low power consumption. This device is available in 8-pin DIP,
SO and TSSOP packages.
I 2.7V to 5.5V operation in all modes
I Typical active current 200µA
10 µA standby current typical
1 µA standby current typical (L)
0.1 µA standby current typical (LZ)
I Self-timed programming cycle
I Device status indication during programming mode
I No erase required before write
The MICROWIRE serial interface offered by this EEPROM en-
ables simple interface to a wide variety of microcontrollers and
microprocessors. There are 7 instructions that operate the
FM93C46A: Read, Erase/Write Enable, Erase, Write, Erase/
Write Disable, Write All and Erase All.
I Reliable CMOS floating gate technology
I MICROWIRE compatible serial I/O
I 40 years data retention
I Endurance: 1,000,000 data changes
I Packages available: 8-pin TSSOP, 8-pin SO, 8-pin DIP
I Schmitt Trigger inputs and VCC lockout to prevent data
corruption
Block Diagram
CS
V
CC
Instruction
Decoder
SK
Control Logic,
And Clock
Generators
Instruction
Register
DI
High Voltage
Generator
And
Address
Register
ORG
Program
Timer
V
PP
EEPROM Array
1024 Bits
(64x16) or (128x8)
Decoder
1 of 64
(or 128)
Read/Write Amps
Data In/Out Register
16 (or 8) Bits
GND
Data Out Buffer
DO
DS800028-1
1
© 1999 Fairchild Semiconductor Corporation
FM93C46A Rev. A
www.fairchildsemi.com
Connection Diagrams
Dual-In-Line Package (N),
8-Pin SO Package (M8)
Rotated Die
(93C46AT)
and 8-Pin TSSOP Package (MT8)
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
NC
CS
SK
DI
ORG
V
CC
V
V
NC
CC
CS
SS
FM93C46A
FM93C46A
DO
DI
ORG
SK
DO
V
SS
DS800028-2
Top View
See Package Number N08E, M08A and MTC08
Pin Names
CS
SK
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
VSS
ORG
NC
VCC
Memory Organizational Select
No Connect
Positive Power Supply
Ordering Information
FM 93 XX
C
A
T
LZ
E
XX
Letter Description
Package
N
8-Pin DIP
M8
MT8
8-Pin SO8
8-Pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Blank
T
Normal Pin Out
Rotated Die Pin Out
A
x8 or x16 Configuration
1K
Density
46
C
CMOS
CS
Data protect and sequential
read
Interface
93
MICROWIRE
FM
Fairchild Non-Volatile
Memory
2
www.fairchildsemi.com
FM93C46A Rev. A
Absolute Maximum Ratings (Note 1)
Ambient Storage Temperature
-65°C to +150°C
Operating Range
Ambient Operating Temperature
FM93C46A
All Input or Output Voltages:
with Respect to Ground
VCC +1 to -0.3V
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
FM93C46AE
FM93C46AV
Lead Temperature
(Soldering, 10 Seconds)
+300°C
Power Supply (VCC
)
4.5V to 5.5V
EDS Rating
2000V
Standard VCC (4.5V to 5.5V) DC and AC Electrical Characteristics
Symbol
ICCA
Parameter
Operating Current
Standby Current
Input Leakage
Part Number
Conditions
CS = VIH ,SK=1 MHz
Min
Max
Units
mA
1
50
1
ICCS
CS = 0V, ORG = VCC or NC
VIN = 0V to VCC (Note 2)
µA
IIL
-1
µA
IILO
Input Leakage
ORG Pin
ORG tied to VCC
ORG tied to VSS (Note 3)
-1
-2.5
1
2.5
µA
IOL
VIL
Output Leakage
VIN = 0V to VCC
-1
-0.1
2
1
0.8
µA
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
SK Clock Frequency
SK High Time
VIH
VCC +1
0.4
V
VOL1
VOH1
VOL2
VOH2
fSK
IOL = 2.1 mA
IOH = -400 µA
IOL = 10 µA
IOL = -10 µA
(Note 4)
V
2.4
V
0.2
1
V
VCC - 0.2
0
V
MHz
ns
tSKH
FM93C46A
FM93C46AE/V
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
tCS
tCSS
tDH
Minimum CS
(Note 5)
250
50
ns
ns
ns
ns
CS Setup Time
DO Hold Time
DI Setup Time
70
tDIS
FM93C46A
FM93C46AE/V
100
200
tCSH
tDIH
tPD
CS Hold Time
0
ns
ns
ns
ns
ns
ms
DI Hold Time
20
Output Delay
500
500
100
10
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
tWP
3
www.fairchildsemi.com
FM93C46A Rev. A
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Operating Temperature
Ambient Storage Temperature
–65°C to +150°C
FM93C46AL/LZ
FM93C46ALE/LZE
FM93C46A LV/LZV
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
2.7V to 5.5V
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
CS = VIH, SK = 250KHz
CS = VIL
1
mA
Standby Current
L
LZ
10
1
µA
µA
IIL
Input Leakage
VIN = 0V to VCC (Note 2)
1
µA
µA
IILO
Input Leakage
ORG Pin
ORG tied to VCC
ORG tied to VSS (Note 3)
-1
-2.5
1
2.5
IOL
Output Leakage
VIN = 0V to VCC
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8 VCC
0.15 VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
0.1 VCC
V
V
0.9 VCC
fSK
SK Clock Frequency
SK High Time
(Note 4)
0
1
250
KHz
µs
tSKH
tSKL
tSKS
SK Low Time
1
µs
SK Setup Time
SK must be at VIL for
tSKS before CS goes high
0.2
µs
tCS
Minimum CS
Low Time
(Note 5)
1
µs
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
CS Hold Time
DI Hold Time
0.2
70
0.4
0
µs
ns
µs
ns
µs
µs
µs
µs
ms
tDIS
tCSH
tDIH
tPD
0.4
Output Delay
2
1
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
0.4
15
tWP
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of the specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz
Symbol
Test
Typ Max Units
Note 2: Typical leakage values are in the 20 nA range.
Note 3: The ORG pin may draw > 1 µA when in the x8 mode ude to an internal pull-up transistor.
COUT
CIN
Output Capacitance
Input Capacitance
5
5
pF
pF
Note 4: The shortest allowable SK clock period = 1/fSK (as shown under the fSK fSK parameter).
Maximum SK clock speed (minimum SK period) is determined by the interaction of several AC
parameters stated in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed.
Therefore, it is not allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
Note 5: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all
internal device registers (device reset) prior to beginning another opcode cycle. (This is shown in
the opcode diagrams in the following pages.)
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
.03V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
(Extended Voltage Levels)
1.0V
10µA
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93C46A Rev. A
Serial Clock (SK):
MICROWIRE I/O Pin Description
This pin is the clock input (rising edge active) for clocking in all
opcodesanddataontheDIpinandclockingoutalldataontheDO
pin.However,thispinhasnoeffectontheasynchronousprogram-
ming cycle (see the CS pin section) as the BUSY/READY status
is a function of the CS pin only.
Chip Select (CS):
This pin enables and disables the MICROWIRE device and
performs 3 general functions:
1. When in the low state, the MICROWIRE device is disabled
and the output tri-stated (high impedance). If this pin is
brought high (rising edge active), all internal registers are
reset and the device is enabled, allowing MICROWIRE
communication via DI/DO pins. To restate, the CS pin must
be held high during all device communication and opcode
functions. If the CS pin is brought low, all functions will be
disabled and reset when CS is brought high again. The
exception to this is when a programming cycle is initiated
(see 2 and 3). Again, all activity on the CS, DI and DO pins
is ignored until CS is brought high.
Data-In (DI):
All serial communication into the device is performed using this
input pin (rising edge active). In order to avoid false Start Bits, or
related issues, it is advised to keep the DI pin in the low state
unless actually clocking in data bits (Start Bit, Opcode, Address or
incoming data bits to be programmed). Please note that the first
'1' clocked into the device (after CS is brought high) is seen as a
Start Bit and the beginning of a serial command string, so caution
must be observed when bringing CS high.
2. After entering all required opcode and address data, bringing
CS low initiates the (asynchronous) programming cycle.
Data-Out (DO):
All serial communication out of the device, Read Data ( during
normal reads) as well as READY/BUSY status indication ( during
programming ) are performed using this output pin. Note that,
during READ operations, the EEPROM device starts to drive the
DO output pin "active" after the last address bit (A0) is clocked in.
Hence in applications where 3-wire configuration is required (
whereDIandDOpinsaretiedtogether)cautionmustbeobserved
for correct operation. Please refer AN-758 for further information.
3. When programming is in progress, the Data-Out pin will
display the programming status as either BUSY (DO low) or
READY (DO high) when CS is brought high. (Again, the
output will be tri-stated when CS is low.) To restate, during
programming, the CS pin may be brought high and low any
number of times to view the programming status without
affect the programming operation. Once programming is
completed (Output in READY state), the output is 'cleared'
(returned to normal tri-state condition) by clocking in a Start
Bit. After the Start Bit is clocked in, the output will return to a
tri-stated condition. When clocked in, this Start Bit can be the
first bit in a command string, or CS can be brought low again
to reset all internal circuits.
Organization (ORG):
This pin controls the device architecture (8-bit data word vs. 16-bit
data word). If the ORG pin is brought to VCC, the device is
configured with a 16-bit data word and if the ORG pin is brought
to VSS (Ground), the device is configured with an 8-bit data word.
If the ORG pin is left floating, the device will default to a 16-bit data
word.
Instruction Set for the FM93C46A
ORG
Memory
Pin
Logic
Configuration
# of Address Bits
0
1
128 x 8
64 x 16
7 Bits
6 Bits
5
www.fairchildsemi.com
FM93C46A Rev. A
64 by 16-Bit Organization (FM93C46A when ORG = VCC or NC)
Instruction
SB
OP-Code
2 Bits
Address
6 Bits
Data
16 Bits
Comments
READ
EWEN
EWDS
ERASE
WRITE
ERAL
1
1
1
1
1
1
1
10
00
00
11
01
00
00
A5–A0
11XXXX
00XXXX
A5–A0
Read data stored in selected registers.
Enables programming modes.
Disables all programming modes.
Erases selected register.
A5–A0
D15–D0
D15–D0
Writes data pattern D15–D0 into selected register.
Erases all registers.
10XXXX
01XXXX
WRAL
Writes data pattern D15–D0 into all registers.
X = Don't care.
128 by 8-Bit Organization (FM93C46A when ORG = GND)
Instruction
SB
OP-Code
2 Bits
Address
7 Bits
Data
8 Bits
Comments
READ
EWEN
EWDS
ERASE
WRITE
ERAL
1
1
1
1
1
1
1
10
00
00
11
01
00
00
A6–A0
11XXXXX
00XXXXX
A6–A0
Read data stored in selected registers.
Enables programming modes.
Disables all programming modes.
Erases selected register.
A6–A0
D7–D0
D7–D0
Writes data pattern D7–D0 into selected register.
Erases all registers.
10XXXXX
01XXXXX
WRAL
Writes data pattern D7–D0 into all registers.
X = Don't care.
Functional Description
Programming:
Read (READ):
1. Programming is initiated by clocking in the Start Bit, Opcode
bits, Address bits and the 8/16 data bits (refer to the ORG
pin section).
The READ instruction outputs serial data on the DO pin. After a
READ instruction is received, the instruction and address are
decoded, followed by data transfer from the selected memory
register into a serial-out shift register. A dummy bit (logical 0)
precedes the serial data output string. Output data changes are
initiated by a low to high transition of SK after the last address bit
(A0) is clocked in.
2. Programming is started by bringing the CS pin low. Once the
programming cycle is started, it cannot be stopped. (Bringing
VCC low will stop any programming, but will also result in
data corruption.)
3. The status of the programming cycle (BUSY or READY) is
observed by bringing the CS pin high and observing the
output state. If the output is LOW, the device is still program-
ming (BUSY). If the output is HIGH, the programming cycle
has been completed and the device is ready for the next
operation. Note that the output will be tri-stated each time
CS is brought low and the READY/BUSY status will be
shown each time CS is brought high.
Erase/Write Enable (EWEN):
When VCC is applied to the part, it “powers up” in the Erase/Write
Disable (EWDS) state. Therefore, all programming modes must
be preceded by an Erase/Write Enable (EWEN) instruction. Once
an Erase/Write Enable instruction is executed, programming
remains enabled until an Erase/Write Disable (EWDS) instruction
is executed or VCC is removed from the part.
4. After programming, the READY state (output HIGH) can be
reset and the output tri-stated by clocking in a single Start
Bit. This Start Bit can be the first bit in a command string, or
CS can be brought low again to reset all internal circuits. In
any case, clocking in a '1' bit will tri-state the output.
6
www.fairchildsemi.com
FM93C46A Rev. A
Write (WRITE):
Functional Description (Continued)
The WRITE instruction is followed by 16 bits of data (or 8 bits of
data when using the FM93C46A in the x8 organization) to be
written into the specified address. Please refer to the Program-
ming section for details.
Erase/Write Disable (EWDS):
To protect against accidental data overwrites, the Erase/Write
Disable (EWDS) instruction disables all programming modes and
should follow all programming operations. Execution of a READ
instruction is independent of both the EVEN and EWDS instruc-
tions.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in
the memory array to the logical “1” state.
Erase (ERASE):
Write All (WRAL):
The ERASE instruction will program all bits in the specified
register to the logical “1” state. Please refer to the Programming
section for details.
The WRAL instruction will simultaneously program all registers
with the data pattern specified in the instruction.
Timing Diagrams for the FM93C46A
Synchronous Data Timing
V
IH
CS
SK
V
t
IL
CSS
t
t
t
CSH
SKH
SKL
t
SKS
V
IH
V
IL
t
t
DIH
DIS
V
IH
DI
V
IL
t
PD
t
DF
t
DH
V
OH
DO (READ)
V
OL
t
SV
t
t
DF
DH
V
OH
DO (PROGRAM)
STATUS VALID
V
OL
DS800028-4
7
www.fairchildsemi.com
FM93C46A Rev. A
Timing Diagrams for the FM93C46A (Continued)
Key for Timing Diagrams
Organization of Address and Data Fields for FM93C46A
ORG Pin
VCC or NC
VSS
Organization
64 x 16
AN
A5
A6
DN
D15
D7
128 x 8
READ
CS
SK
DI
tCS
. . .
1
1
0
AN
A0
. . .
DO
0
DN
D0
DS800028-5
EWEN
DO = HI-Z
tCS
CS
SK
DI
. . .
X
X
1
0
0
1
1
ORG = V , 4 X'S
CC
DS800028-6
ORG = V , 5 X'S
SS
EWDS
DO = HI-Z
tCS
CS
SK
DI
. . .
X
X
1
0
0
0
0
ORG = V , 4 X'S
CC
DS800028-7
ORG = V , 5 X'S
SS
ERASE
tCS
CS
SK
Standby
DI
. . .
AN
1
1
1
A0
HI-Z
HI-Z
Busy
Ready
DO
DS800028-8
tWP
8
www.fairchildsemi.com
FM93C46A Rev. A
Timing Diagrams for the FM93C46A (Continued)
WRITE
tCS
CS
SK
. . .
. . .
1
0
1
AN
A0 DN
D0
DI
Busy
tWP
Ready
DO
DS800028-9
ERAL
tCS
CS
STANDBY
SK
DI
. . .
1
0
0
1
0
X
X
ORG = VCC, 4 X's
ORG = VSS, 5 X's
READY
DO
BUSY
READY STATUS SIGNAL RESETS
TO HI-Z AFTER CLOCKING IN
ONE SK CYCLE WITH DI = 1
tWP
DS800028-10
WRAL
tCS
CS
STANDBY
SK
DI
. . .
. . .
D0
1
0
0
0
1
X
X
DN
ORG = VCC, 4 X's
ORG = VSS, 5 X's
READY
DO
BUSY
READY STATUS SIGNAL RESETS
TO HI-Z AFTER CLOCKING IN
ONE SK CYCLE WITH DI = 1
tWP
DS800028-11
9
www.fairchildsemi.com
FM93C46A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Outline Package (M8)
Package Number M08A
10
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FM93C46A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
11
www.fairchildsemi.com
FM93C46A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
Deutsch
English
Français
Italiano
+49 (0) 8141-6102-0
+44 (0) 1793-856856
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+39 (0) 2-249111-1
2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
12
www.fairchildsemi.com
FM93C46A Rev. A
December 1999
FM93C56
2K-Bit Serial CMOS EEPROM
(MICROWIRE™ Bus Interface)
General Description
Features
The FM93C56 device is 2048 bits of CMOS non-volatile electri-
cally erasable memory organized as 128x16 bit array. They are
fabricated using Fairchild Semiconductor's floating-gate CMOS
process for high reliability, high endurance and low power con-
sumption. These memory devices are available in an 8-pin SOIC
or 8-pin TSSOP package for small space considerations.
I Device status during programming mode
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I No erase required before write
I Reliable CMOS floating gate technology
I 2.7V to 5.5V operation in all modes
I MICROWIRE compatible serial l/O
I Self-timed programming cycle
I 40 years data retention
FM93C56 is compatible with MICROWIRE serial interface, which
offers simple interface to standard microcontrollers and micropro-
cessors. There are 7 instructions which control this device: Read,
WriteEnable, Erase, EraseAll, Write, WriteAll, andWriteDisable.
The ready/busy status is available on the DO pin to indicate the
completion of a programming cycle.
I Endurance: 1,000,000 data changes
I Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
I Schmitt Trigger inputs and VCC lockout to prevent data
corruption
Block Diagram
VCC
CS
SK
INSTRUCTION
DECODER
CONTROL LOGIC,
AND CLOCK
GENERATORS
INSTRUCTION
REGISTER
DI
HIGH VOLTAGE
GENERATOR
AND
ADDRESS
REGISTER
PROGRAM
TIMER
VPP
DECODER
1 OF 128
EEPROM ARRAY
16
READ/WRITE AMPS
16
VSS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
DS800026-1
1
© 1999 Fairchild Semiconductor Corporation
FM93C56
www.fairchildsemi.com
Connection Diagrams
Dual-In-Line Package (N),
8-Pin SO (M8) and 8-Pin TSSOP (MT8)
Rotated Die (93C56T)
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
CS
SK
DI
NC
VCC
NC
NC
GND
DO
DI
V
CC
NC
CS
DO
GND
SK
DS800026-2
DS800026-12
Top View
See Package Number
N08E, M08A and MTC08
Pin Names
CS
Chip Select
SK
Serial Data Clock
Serial Data Input
DI
DO
GND
VCC
Serial Data Output
Ground
Power Supply
Ordering Information
FM
93
C
XX
T
LZ
E
XX
Letter Description
Package
N
8-Pin DIP
M8
MT8
8-Pin SO8
8-Pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Blank
T
Normal Pin Out
Rotated Die Pin Out
Density
56
2K
C
CMOS
CS
Data protect and sequential
read
Interface
93
MICROWIRE
FM
Fairchild Non-Volatile
Memory
2
www.fairchildsemi.com
FM93C56
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Storage Temperature
–65°C to +150°C
Ambient Operating Temperature
FM93C56
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
FM93C56E
FM93C56V
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
4.5V to 5.5V
2000V
DC and AC Electrical Characteristics 4.5V ≤ VCC ≤ 5.5V
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
Standby Current
CS = VIH, SK = 1MHz
CS = VIL
1
50
1
mA
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
2
0.8
VCC +1
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL = 2.1mA
IOH = -400 µA
0.4
0.2
1
V
V
2.4
VOL2
VOH2
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
V
V
VCC -0.2
0
fSK
SK Clock Frequency
SK High Time
(Note 3)
MHz
ns
tSKH
FM93C56
FM93C56E/V
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
tCS
Minimum CS
Low Time
(Note 4)
250
ns
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
50
70
ns
ns
ns
tDIS
FM93C56
FM93C56E/V
100
200
tCSH
tDIH
tPD
CS Hold Time
0
ns
ns
ns
ns
ns
ms
DI Hold Time
20
Output Delay
500
500
100
10
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
tWP
3
www.fairchildsemi.com
FM93C56
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Storage Temperature
–65°C to +150°C
Ambient Operating Temperature
FM93C56L/LZ
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
FM93C56LE/LZE
FM93C56LV/LZV
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
2.7V to 5.5V
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
CS = VIH, SK = 250KHz
CS = VIL
1
mA
Standby Current
L
LZ
10
1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8 VCC
0.15 VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
0.1 VCC
V
V
0.9 VCC
fSK
SK Clock Frequency
SK High Time
(Note 3)
0
1
250
KHz
µs
tSKH
tSKL
tSKS
SK Low Time
1
µs
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
0.2
µs
tCS
Minimum CS
Low Time
(Note 4)
1
µs
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
CS Hold Time
DI Hold Time
0.2
70
0.4
0
µs
ns
µs
ns
µs
µs
µs
µs
ms
tDIS
tCSH
tDIH
tPD
0.4
Output Delay
2
1
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
0.4
15
tWP
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of the specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz (Note 5)
Symbol
Test
Typ Max Units
Note 2: Typical leakage values are in the 20nA range.
Note 3: The shortest allowable SK clock period = 1/fSK (as shown under the fSK parameter).
Maximum SK clock speed (minimum SK period) is determined by the interaction of several AC
parametersstatedinthedatasheet.WithinthisSKperiod,bothtSKH andtSKL limitsmustbeobserved.
Therefore,itisnotallowabletoset1/fSK =tSKHminimum +tSKLminimum forshorterSKcycletimeoperation.
COUT
CIN
Output Capacitance
Input Capacitance
5
5
pF
pF
Note 4: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all
internaldeviceregisters(devicereset)priortobeginninganotheropcodecycle. (Thisisshowninthe
opcode diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
.03V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
(Extended Voltage Levels)
1.0V
10µA
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93C56
Write (WRITE):
Functional Description
TheWRITEinstructionisfollowedbytheaddressand16bitsofdata
to be written into the specified address. After the last bit of data is
put in the data-in (DI) pin, CS must be brought low before the next
rising edge of the SK clock. This falling edge of the CS initiates the
self-timed programming cycle. The D0 pin indicates the READY/
The FM93C56device has7 instructionsas describedbelow. Note
that the MSB of any instruction is a “1” and is viewed as a start bit
in the interface sequence. The next 10 bits carry the op code and
the 8-bit address for register selection.
Read (READ):
BUSYstatusofthechipifCSisbroughthighafteraminimumoft
.
CS
D0 = logical 1 indicates that the register at the address specified in
theinstructionhasbeenwrittenwiththedatapatternspecifiedinthe
instruction and the part is ready for another instruction.
The READ instruction outputs serial data on the D0 pin. After a
READ instruction is received, the instruction and address are
decoded, followed by data transfer from the selected memory
register into a 16-bit serial-out shift register. A dummy bit (logical
0)precedesthe16-bitdataoutputstring. Outputdatachangesare
initiated by a low to high transition of the SK clock.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in
thememoryarrayandseteachbittothelogical“1”state.TheErase
All cycle is identical to the ERASE cycle except for the different op-
code. As in the ERASE mode, the DO pin indicates the READY/
BUSY status of the chip if CS is brought high after the tCS interval.
Write Enable (WEN):
When VCC is applied to the part, it 'powers-up' in the Write Disable
(WDS) state. Therefore, all programming modes must be pre-
ceded by a Write Enable (WEN) instruction. Once a Write Enable
instructionisexecuted,programmingremainsenableduntilaWrite
Disable (WDS) instruction is executed or VCC is removed from the
part.
Write All (WRALL):
The WRALL instruction will simultaneously program all registers
with the data pattern specified in the instruction. As in the WRITE
mode, the DO pin indicates the READY/BUSY status of the chip
Erase (ERASE):
if CS is brought high after the t interval.
CS
The ERASE instruction will program all bits in the specified
register to the logical “1” state. CS is brought low following the
loading of the last address bit. This falling edge of the CS pin
initiates the self-timed programming cycle.
Write Disable (WDS):
To protect against accidental data disturb, the WDS instruction
disables all programming modes and should follow all program-
ming operations. Execution of a READ instruction is independent
of both the WEN and WDS instructions.
The DO pin indicates the READY/BUSY status of the chip if CS is
broughthighafteraminimumtimeoftCS. DO=logical“0”indicates
that the register, at the address specified in the instruction, has
been erased, and the part is ready for another instruction.
Note: The Fairchild CMOS EEPROMs do not require an "ERASE" or "ERASE ALL"
operationpriortothe"WRITE"and"WRITEALL"instructions. The"ERASE"and"ERASE
ALL"instructionsareincludedtomaintaincompatibilitywithearliertechnologyEEPROMs.
Instruction Set for the FM93C56
Instruction
READ
SB
1
Op. Code
Address
A7-A0
Data
Comments
Reads data stored in memory, at specified address.
Write enable must precede all programming modes.
Erase selected register.
10
00
11
01
00
00
00
WEN
1
11xxxxxx
A7-A0
ERASE
WRITE
ERAL
1
1
A7-A0
D15-D0
D15-D0
Writes selected register.
1
10xxxxxx
01xxxxxx
00xxxxxx
Erases all registers.
WRALL
WDS
1
Writes all registers.
1
Disables all programming instructions.
Note:
Note:
A7 is "don't care" bit, but must be included in the address string.
x = Don't care.
5
www.fairchildsemi.com
FM93C56
Timing Diagrams
Synchronous Data Timing
V
IH
CS
V
t
IL
CSS
t
t
t
CSH
SKH
SKL
t
SKS
V
IH
SK
V
IL
t
t
DIH
DIS
V
IH
DI
V
IL
t
PD
t
DF
t
DH
V
OH
DO (READ)
V
OL
t
SV
t
t
DF
DH
V
OH
DO (PROGRAM)
STATUS VALID
V
OL
DS800026-4
READ
CS
SK
DI
t
CS
. . .
1
1
0
A7
A0
. . .
DO
0
D15
D0
DS800026-5
WEN
CS
SK
DI
t
CS
. . .
1
0
0
1
1
X
X
DS800026-6
WDS
CS
SK
DI
tCS
. . .
1
0
0
0
0
X
X
DS800026-7
6
www.fairchildsemi.com
FM93C56
Timing Diagrams (Continued)
WRITE
CS
SK
t
CS
. . .
1
0
1
A7
A0
D15
D0
DI
DO
BUSY
READY
t
WP
DS800026-8
WRALL
CS
SK
DI
t
CS
. . .
1
0
0
0
1
DON'T CARE (6 BITS) D15
D0
DO
BUSY
READY
t
WP
DS800026-9
ERASE
t
CS
CS
SK
STANDBY
. . .
DI
1
1
1
A7
A6
A5
A0
HI-Z
HI-Z
DO
BUSY
READY
t
WP
DS800026-10
ERAL
t
CS
CS
STANDBY
SK
DI
1
0
0
1
0
DON'T CARE BITS (6 BITS)
HI-Z
HI-Z
DO
BUSY
READY
t
WP
DS800026-11
7
www.fairchildsemi.com
FM93C56
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Out-Line Package (M8)
Package Number M08A
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
8
www.fairchildsemi.com
FM93C56
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
Deutsch
English
Français
Italiano
+49 (0) 8141-6102-0
+44 (0) 1793-856856
+33 (0) 1-6930-3696
+39 (0) 2-249111-1
2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
9
www.fairchildsemi.com
FM93C56
January 2000
FM93C56A
2K-Bit Serial CMOS EEPROM
(MICROWIRE™ Synchronous Bus)
General Description
Features
The FM93C56A is 2048 bits of CMOS nonvolatile EEPROM (
Electrically Erasable Programmable Read Only Memory) with
MICROWIRE serial interface. FM93C56A can be configured for
either 128 x 16 bit or 256 x 8 bit array using an organization (ORG)
inputpin.ThisdeviceisfabricatedusingFairchildSemiconductor's
floating gate CMOS process for high reliability, high endurance
and low power consumption. This device is available in 8-pin DIP,
SO and TSSOP packages.
I 2.7V to 5.5V operation in all modes
I Typical active current 200µA
10 µA standby current typical
1 µA standby current typical (L)
0.1 µA standby current typical (LZ)
I Self-timed programming cycle
I Device status indication during programming mode
I No erase required before write
The MICROWIRE serial interface offered by this EEPROM en-
ables simple interface to a wide variety of microcontrollers and
microprocessors. There are 7 instructions that operate the
FM93C56A: Read, Erase/Write Enable, Erase, Write, Erase/
Write Disable, Write All and Erase All.
I Reliable CMOS floating gate technology
I MICROWIRE compatible serial I/O
I 40 years data retention
I Endurance: 1,000,000 data changes
I Packages available: 8-Pin TSSOP, 8-pin SO, 8-pin DIP
I Schmitt Trigger inputs and VCC lockout to prevent data
corruption
Block Diagram
CS
V
CC
Instruction
Decoder
SK
Control Logic,
And Clock
Generators
Instruction
Register
DI
High Voltage
Generator
And
Address
Register
ORG
Program
Timer
V
PP
EEPROM Array
2048 Bits
(128x16) or (256x8)
Decoder
1 of 128
(or 256)
Read/Write Amps
Data In/Out Register
16 (or 8) Bits
GND
Data Out Buffer
DO
DS800029-1
1
© 1999 Fairchild Semiconductor Corporation
FM93C56A Rev. A
www.fairchildsemi.com
Connection Diagram
Rotated Die
(93C56AT)
Dual-In-Line Package (N)
8-Pin SO Package (M8)
and 8-Pin TSSOP Package (MT8)
1
8
NC
1
8
7
6
5
ORG
CS
SK
DI
V
CC
2 FM93C56A
7
V
V
2 FM93C56A
NC
CC
CS
SS
3
6
DO
DI
3
ORG
4
5
SK
4
DO
V
SS
DS800029-2
Top View
See Package Number N08E, M08A and MTC08
Pin Names
Pin
CS
Description
Chip Select
SK
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
VSS
ORG
NC
Memory Organization Select
No Connect
VCC
Positive Power Supply
Ordering Information
FM 93 XX
C
A
T
LZ
E
XX
Letter Description
Package
N
8-Pin DIP
M8
MT8
8-Pin SO8
8-Pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Blank
T
Normal Pin Out
Rotated Die Pin Out
A
x8 or x16 Configuration
2K
Density
56
C
CMOS
CS
Data protect and sequential
read
Interface
93
MICROWIRE
FM
Fairchild Non-Volatile
Memory
2
www.fairchildsemi.com
FM93C56A Rev. A
Absolute Maximum Ratings (Note 1)
Operating Conditions
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93C56A
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
FM93C56AE
FM93C56AV
VCC +1 to -0.3V
Lead Temperature
Power Supply (VCC) Range
4.5V to 5.5V
(Soldering, 10 seconds)
+300°C
ESD Rating
2000V
DC and AC Electrical Characteristics 4.5V ≤ VCC ≤ 5.5V
Symbol
ICCA
Parameter
Operating Current
Standby Current
Input Leakage
Part Number
Conditions
CS = VIH SK = 1 MHz
Min
Max
Units
mA
1
50
1
ICCS
CS = 0V ORG = VCC or NC
VIN = 0V to VCC (Note 2)
µA
IIL
-1
µA
IILO
Input Leakage
ORG Pin
ORG Tied to VCC
ORG Tied to VSS (Note 3)
-1
-2.5
1
2.5
µA
IOL
VIL
Output Leakage
VIN = 0V to VCC
-1
-0.1
2
1
0.8
µA
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
SK Clock Frequency
SK High Time
VIH
VCC +1
0.4
V
VOL1
VOH1
VOL2
VOH2
fSK
IOL = 2.1 mA
IOH = -400 µA
IOL = 10 µA
IOL = -10 µA
(Note 4)
V
2.4
V
0.2
1
V
VCC -0.2
0
V
MHz
ns
tSKH
FM93C56A
FM93C56AE
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
tCS
Minimum CS
Low Time
(Note 5)
250
ns
tCSS
tDH
CS Set-Up Time
D0 Hold Time
50
70
ns
ns
ns
tDIS
DI Set-Up Time
FM93C56A
FM93C56AE/V
100
200
tCSH
tDIH
tPD
tSV
CS Hold Time
0
ns
ns
ns
ns
ns
ms
DI Hold Time
20
Output Delay
500
500
100
10
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
tWP
3
www.fairchildsemi.com
FM93C56A Rev. A
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Operating Temperature
Ambient Storage Temperature
–65°C to +150°C
FM93C56AL/LZ
FM93C56ALE/LZE
FM93C56A LV/LZV
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
2.7V to 5.5V
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
CS = VIH, SK = 250KHz
CS = VIL
1
mA
Standby Current
L
LZ
10
1
µA
µA
IIL
Input Leakage
VIN = 0V to VCC (Note 2)
1
µA
µA
IILO
Input Leakage
ORG Pin
ORG tied to VCC
ORG tied to VSS (Note 3)
-1
-2.5
1
2.5
IOL
Output Leakage
VIN = 0V to VCC
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8 VCC
0.15 VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
0.1 VCC
V
V
0.9 VCC
fSK
SK Clock Frequency
SK High Time
(Note 4)
0
1
250
KHz
µs
tSKH
tSKL
tSKS
SK Low Time
1
µs
SK Setup Time
SK must be at VIL for
tSKS before CS goes high
0.2
µs
tCS
Minimum CS
Low Time
(Note 5)
1
µs
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
CS Hold Time
DI Hold Time
0.2
70
0.4
0
µs
ns
µs
ns
µs
µs
µs
µs
ms
tDIS
tCSH
tDIH
tPD
0.4
Output Delay
2
1
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
0.4
15
tWP
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of the specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz
Symbol
COUT
Test
Typ Max Units
Note 2: Typical leakage values are in the 20 nA range.
Note 3: The ORG pin may draw > 1 µA when in the x8 mode ude to an internal pull-up transistor.
Output Capacitance
Input Capacitance
5
5
pF
pF
Note 4: The shortest allowable SK clock period = 1/fSK (as shown under the fSK fSK parameter).
Maximum SK clock speed (minimum SK period) is determined by the interaction of several AC
parameters stated in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed.
Therefore, it is not allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
CIN
Note 5: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all
internal device registers (device reset) prior to beginning another opcode cycle. (This is shown in
the opcode diagrams in the following pages.)
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
.03V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
(Extended Voltage Levels)
1.0V
10µA
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93C56A Rev. A
Serial Clock (SK):
MICROWIRE I/O Pin Description
This pin is the clock input (rising edge active) for clocking in all
opcodesanddataontheDIpinandclockingoutalldataontheDO
pin.However,thispinhasnoeffectontheasynchronousprogram-
ming cycle (see the CS pin section) as the BUSY/READY status
is a function of the CS pin only.
Chip Select (CS):
This pin enables and disables the MICROWIRE device and
performs 3 general functions:
1. When in the low state, the MICROWIRE device is disabled
and the output tri-stated (high impedance). If this pin is
brought high (rising edge active), all internal registers are
reset and the device is enabled, allowing MICROWIRE
communication via DI/DO pins. To restate, the CS pin must
be held high during all device communication and opcode
functions. If the CS pin is brought low, all functions will be
disabled and reset when CS is brought high again. The
exception to this is when a programming cycle is initiated
(see 2 and 3). Again, all activity on the CS, DI and DO pins
is ignored until CS is brought high.
Data-In (DI):
All serial communication into the device is performed using this
input pin (rising edge active). In order to avoid false Start Bits, or
related issues, it is advised to keep the DI pin in the low state
unless actually clocking in data bits (Start Bit, Opcode, Address or
incoming data bits to be programmed). Please note that the first
'1' clocked into the device (after CS is brought high) is seen as a
Start Bit and the beginning of a serial command string, so caution
must be observed when bringing CS high.
2. After entering all required opcode and address data, bringing
CS low initiates the (asynchronous) programming cycle.
Data-Out (DO):
All serial communication out of the device, Read Data ( during
normal reads) as well as READY/BUSY status indication ( during
programming ) are performed using this output pin. Note that,
during READ operations, the EEPROM device starts to drive the
DO output pin "active" after the last address bit (A0) is clocked in.
Hence in applications where 3-wire configuration is required (
whereDIandDOpinsaretiedtogether)cautionmustbeobserved
for correct operation. Please refer AN-758 for further information.
3. When programming is in progress, the Data-Out pin will
display the programming status as either BUSY (DO low) or
READY (DO high) when CS is brought high. (Again, the
output will be tri-stated when CS is low.) To restate, during
programming, the CS pin may be brought high and low any
number of times to view the programming status without
affect the programming operation. Once programming is
completed (Output in READY state), the output is 'cleared'
(returned to normal tri-state condition) by clocking in a Start
Bit. After the Start Bit is clocked in, the output will return to a
tri-stated condition. When clocked in, this Start Bit can be the
first bit in a command string, or CS can be brought low again
to reset all internal circuits.
Organization (ORG):
This pin controls the device architecture (8-bit data word vs. 16-bit
data word). If the ORG pin is brought to VCC, the device is
configured wiht a 16-bit data word and if the ORG pin is brought
to VSS (Ground), the device is configured with an 8-bit data word.
If the ORG pin is left floating, the device will default to a 16-bit data
word.
Instruction Set for the FM93C56A
ORG
Memory
Pin
Logic
Configuration
# of Address Bits
0
1
256 x 8
9 Bits
8 Bits
128 x 16
Note:
Theleading(MSB)bitisa"don'tcare,"butmustbeincludedintheaddressstring.
5
www.fairchildsemi.com
FM93C56A Rev. A
128 by 16-Bit Organization (FM93C56A when ORG = VCC or NC)
Instruction
SB
OP-Code
2 Bits
Address
8 Bits
Data
16 Bits
Comments
READ
EWEN
EWDS
ERASE
WRITE
ERAL
1
1
1
1
1
1
1
10
00
00
11
01
00
00
A7–A0
11XXXXXX
00XXXXXX
A7–A0
Read data stored in selected registers.
Enables programming modes.
Disables all programming modes.
Erase selected register.
A7–A0
D15–D0
D15–D0
Writes data pattern D15–D0 into selected register.
Erases all registers.
10XXXXXX
01XXXXXX
WRAL
Writes data pattern D15–D0 into all registers.
Note: The A7 bit is a "don't care" bit, but must be entered in the Address string.
Note: X = Don't care.
256 by 8-Bit Organization (FM93C56A when ORG = GND)
Instruction
SB
OP-Code
2 Bits
Address
9 Bits
Data
8 Bits
Comments
READ
EWEN
EWDS
ERASE
WRITE
ERAL
1
1
1
1
1
1
1
10
00
00
11
01
00
00
A8–A0
11XXXXXXX
00XXXXXXX
A8–A0
Read data stored in selected registers.
Enables programming modes.
Disables all programming modes.
Erase selected register.
A8–A0
D7–D0
D7–D0
Writes data pattern D7–D0 into selected registers.
Erases all registers.
10XXXXXXX
01XXXXXXX
WRAL
Writes data pattern D7–D0 into all registers.
Note: The A8 bit is a "don't care" bit, but must be entered in the Address string.
Note: X = Don't care.
Read (READ)
Functional Description
The READ instruction outputs serial data on the DO pin. After a
READ instruction is received, the instruction and address are
decoded, followed by data transfer from the selected memory
register into a serial-out shift register. A dummy bit (logical 0)
precedes the serial data output string. Output data changes are
initiated by a low to high transition of SK after the last address bit
(A0) is clocked in.
Programming:
1. Programming is initiated by clocking in the Start Bit, Opcode
bits, Address bits and the 8/16 data bits (refer to the ORG
pin section).
2. Programming is started by bringing the CS pin low. Once the
programming cycle is started, it cannot be stopped. (Bringing
V
CC low will stop any programming, but will also result in
Erase/Write Enable (EWEN)
data corruption.)
When VCC is applied to the part, it “powers up” in the Erase/Write
Disable (EWDS) state. Therefore, all programming modes must
be preceded by an Erase/Write Enable (EWEN) instruction. Once
an Erase/Write Enable instruction is executed, programming
remains enabled until an Erase/Write Disable (EWDS) instruction
is executed or VCC is removed from the part.
3. The status of the programming cycle (BUSY or READY) is
observed by bringing the CS pin high and observing the
output state. If the output is LOW, the device is still program-
ming (BUSY). If the output is HIGH, the programming cycle
has been completed and the device is ready for the next
operation. Note that the output will be tri-stated each time
CS is brought low and the READY/BUSY status will be
shown each time CS is brought high.
4. After programming, the READY state (output HIGH) can be
reset and the output tri-stated by clocking in a single Start
Bit. This Start Bit can be the first bit in a command string, or
CS can be brought low again to reset all internal circuits. In
any case, clocking in a '1' bit will tri-state the output.
6
www.fairchildsemi.com
FM93C56A Rev. A
Write (WRITE):
Functional Description (Continued)
The WRITE instruction is followed by 16 bits of data (or 8 bits of
data when using the FM93C56A in the x8 organization) to be
written into the specified address. Please refer to the Program-
ming section for details.
Erase/Write Disable (EWDS):
To protect against accidental data overwrites, the Erase/Write
Disable (EWDS) instruction disables all programming modes and
should follow all programming operations. Execution of a READ
instruction is independent of both the EWEN and EWDS instruc-
tions.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in
the memory array to the logical “1” state.
Erase (ERASE):
Write All (WRAL):
The ERASE instruction will program all bits in the specified
register to the logical “1” state. Please refer to the Programming
section for details.
The WRAL instruction will simultaneously program all registers
with the data pattern specified in the instruction.
Timing Diagrams for the FM93C56A
Synchronous Data Timing
V
IH
CS
SK
V
t
IL
CSS
t
t
t
CSH
SKH
SKL
t
SKS
V
IH
V
IL
t
t
DIH
DIS
V
IH
DI
V
IL
t
PD
t
DF
t
DH
V
OH
DO (READ)
V
OL
t
t
t
DF
SV
DH
V
OH
DO (PROGRAM)
STATUS VALID
V
OL
DS800029-4
7
www.fairchildsemi.com
FM93C56A Rev. A
Timing Diagrams for the FM93C56A (Continued)
Key for Timing Diagrams
Organization of Address and Data Fields for FM93C56A
ORG Pin
VCC or NC
VSS
Organization
128 x 16
AN DN
A7
D15
256 x 8
A8
D7
Note:
The MSB is "don't care."
READ
CS
SK
DI
tCS
. . .
1
1
0
A
N
A0
. . .
DO
0
DN
D0
DS800029-5
EWEN
DO = HI-Z
t
CS
SK
DI
CS
. . .
X
X
1
0
0
1
1
ORG = V , 4 X'S
CC
DS800029-6
ORG = V , 5 X'S
SS
EWDS
DO = HI-Z
t
CS
SK
DI
CS
. . .
X
X
1
0
0
0
0
ORG = V , 4 X'S
CC
DS800029-7
ORG = V , 5 X'S
SS
ERASE
tCS
CS
SK
Standby
DI
. . .
AN
1
1
1
A0
HI-Z
HI-Z
Busy
Ready
DO
DS800029-8
tWP
8
www.fairchildsemi.com
FM93C56A Rev. A
Timing Diagrams for the FM93C56A (Continued)
WRITE
tCS
CS
SK
. . .
. . .
1
0
1
AN
A0 DN
D0
DI
Busy
tWP
Ready
DO
DS800029-9
ERAL
tCS
CS
STANDBY
SK
DI
. . .
1
0
0
1
0
X
X
ORG = VCC, 4 X's
ORG = VSS, 5 X's
READY
DO
BUSY
READY STATUS SIGNAL RESETS
TO HI-Z AFTER CLOCKING IN
ONE SK CYCLE WITH DI = 1
tWP
DS800029-10
WRAL
tCS
CS
SK
DI
STANDBY
. . .
. . .
D0
1
0
0
0
1
X
X
DN
ORG = VCC, 4 X's
ORG = VSS, 5 X's
READY
BUSY
DO
READY STATUS SIGNAL RESETS
TO HI-Z AFTER CLOCKING IN
ONE SK CYCLE WITH DI = 1
tWP
DS800029-11
9
www.fairchildsemi.com
FM93C56A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Outline Package (M8)
Package Number M08A
10
www.fairchildsemi.com
FM93C56A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
11
www.fairchildsemi.com
FM93C56A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
Deutsch
English
Français
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+49 (0) 8141-6102-0
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2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
12
www.fairchildsemi.com
FM93C56A Rev. A
December 1999
FM93C66
4K-Bit Serial CMOS EEPROM
(MICROWIRE™ Bus Interface)
General Description
Features
The FM93C66 device is 4096 bits of CMOS non-volatile electri-
cally erasable memory organized as 256x16 bit array. They are
fabricated using Fairchild Semiconductor's floating-gate CMOS
process for high reliability, high endurance and low power con-
sumption. These memory devices are available in an 8-pin SOIC
or 8-pin TSSOP package for small space considerations.
I Device status during programming mode
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I No erase required before write
I Reliable CMOS floating gate technology
I 2.7V to 5.5V operation in all modes
I MICROWIRE compatible serial l/O
I Self-timed programming cycle
I 40 years data retention
FM93C66 is compatible with MICROWIRE interface, which offers
simple interface to standard microcontrollers and microproces-
sors. There are 7 instructions which control this device: Read,
WriteEnable, Erase, EraseAll, Write, WriteAll, andWriteDisable.
The ready/busy status is available on the DO pin to indicate the
completion of a programming cycle.
I Endurance: 1,000,000 data changes
I Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
I Schmitt Trigger inputs and VCC lockout to prevent data
corruption
Block Diagram
VCC
CS
SK
INSTRUCTION
DECODER
CONTROL LOGIC,
AND CLOCK
GENERATORS
INSTRUCTION
REGISTER
DI
HIGH VOLTAGE
GENERATOR
AND
ADDRESS
REGISTER
PROGRAM
TIMER
VPP
DECODER
1 OF 256
EEPROM ARRAY
16
READ/WRITE AMPS
16
VSS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
DS800027-1
1
© 1999 Fairchild Semiconductor Corporation
FM93C66
www.fairchildsemi.com
Connection Diagrams
Dual-In-Line Package (N),
8-Pin SO (M8) and 8-Pin TSSOP (MT8)
1
2
3
4
8
7
6
5
CS
SK
DI
VCC
NC
NC
DO
GND
DS800027-2
Top View
See Package Number
N08E, M08A and MTC08
Pin Names
CS
Chip Select
SK
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
GND
VCC
Power Supply
Ordering Information
FM
93
C
XX LZ
E
XX
Letter Description
Package
N
8-Pin DIP
M8
MT8
8-Pin SO8
8-Pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Density
66
C
4K
CMOS
Interface
93
FM
MICROWIRE
Fairchild Non-Volatile
Memory
2
www.fairchildsemi.com
FM93C66
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Storage Temperature
–65°C to +150°C
Ambient Operating Temperature
FM93C66
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
FM93C66E
FM93C66V
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
4.5V to 5.5V
2000V
DC and AC Electrical Characteristics 4.5V ≤ VCC ≤ 5.5V
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
Standby Current
CS = VIH, SK = 1MHz
CS = VIL
1
50
1
mA
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
2
0.8
VCC +1
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL = 2.1mA
IOH = -400 µA
0.4
0.2
1
V
V
2.4
VOL2
VOH2
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
V
V
VCC -0.2
0
fSK
SK Clock Frequency
SK High Time
(Note 3)
MHz
ns
tSKH
FM93C66
FM93C66E/V
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
tCS
Minimum CS
Low Time
(Note 4)
250
ns
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
50
70
ns
ns
ns
tDIS
FM93C66
FM93C66E/V
100
200
tCSH
tDIH
tPD
CS Hold Time
0
ns
ns
ns
ns
ns
ms
DI Hold Time
20
Output Delay
500
500
100
10
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
tWP
3
www.fairchildsemi.com
FM93C66
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Storage Temperature
–65°C to +150°C
Ambient Operating Temperature
FM93C66L/LZ
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
FM93C66LE/LZE
FM93C66LV/LZV
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
2.7V to 5.5V
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
CS = VIH, SK = 250KHz
CS = VIL
1
mA
Standby Current
L
LZ
10
1
µA
µA
IIL
Input Leakage
VIN = 0V to VCC
1
µA
IOL
Output Leakage
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8 VCC
0.15 VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
0.1 VCC
V
V
0.9 VCC
fSK
SK Clock Frequency
SK High Time
(Note 3)
0
1
250
KHz
µs
tSKH
tSKL
tSKS
SK Low Time
1
µs
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
0.2
µs
tCS
Minimum CS
Low Time
(Note 4)
1
µs
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
CS Hold Time
DI Hold Time
0.2
70
0.4
0
µs
ns
µs
ns
µs
µs
µs
µs
ms
tDIS
tCSH
tDIH
tPD
0.4
Output Delay
2
1
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
0.4
15
tWP
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of the specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz (Note 5)
Symbol
Test
Typ Max Units
Note 2: Typical leakage values are in the 20nA range.
Note 3: TheshortestallowableSKclockperiod=1/fSK (asshownunderthefSK parameter).Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not
allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
COUT
CIN
Output Capacitance
Input Capacitance
5
5
pF
pF
Note 4: CS (Chip Select) must be brought low (to V ) for an interval of tCS in order to reset all internal
IL
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
.03V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
(Extended Voltage Levels)
1.0V
10µA
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93C66
Write (WRITE):
Functional Description
TheWRITEinstructionisfollowedbytheaddressand16bitsofdata
to be written into the specified address. After the last bit of data is
put in the data-in (DI) pin, CS must be brought low before the next
rising edge of the SK clock. This falling edge of the CS initiates the
self-timed programming cycle. The D0 pin indicates the READY/
The FM93C66device has7 instructionsas describedbelow. Note
that the MSB of any instruction is a “1” and is viewed as a start bit
in the interface sequence. The next 10 bits carry the op code and
the 8-bit address for register selection.
Read (READ):
BUSYstatusofthechipifCSisbroughthighafteraminimumoft
.
CS
D0 = logical 1 indicates that the register at the address specified in
theinstructionhasbeenwrittenwiththedatapatternspecifiedinthe
instruction and the part is ready for another instruction.
The READ instruction outputs serial data on the D0 pin. After a
READ instruction is received, the instruction and address are
decoded, followed by data transfer from the selected memory
register into a 16-bit serial-out shift register. A dummy bit (logical
0)precedesthe16-bitdataoutputstring. Outputdatachangesare
initiated by a low to high transition of the SK clock.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in
thememoryarrayandseteachbittothelogical“1”state.TheErase
All cycle is identical to the ERASE cycle except for the different op-
code. As in the ERASE mode, the DO pin indicates the READY/
BUSY status of the chip if CS is brought high after the tCS interval.
Write Enable (WEN):
When VCC is applied to the part, it 'powers-up' in the Write Disable
(WDS) state. Therefore, all programming modes must be pre-
ceded by a Write Enable (WEN) instruction. Once a Write Enable
instructionisexecuted,programmingremainsenableduntilaWrite
Disable (WDS) instruction is executed or VCC is removed from the
part.
Write All (WRALL):
The WRALL instruction will simultaneously program all registers
with the data pattern specified in the instruction. As in the WRITE
mode, the DO pin indicates the READY/BUSY status of the chip
Erase (ERASE):
if CS is brought high after the t interval.
CS
The ERASE instruction will program all bits in the specified
register to the logical “1” state. CS is brought low following the
loading of the last address bit. This falling edge of the CS pin
initiates the self-timed programming cycle.
Write Disable (WDS):
To protect against accidental data disturb, the WDS instruction
disables all programming modes and should follow all program-
ming operations. Execution of a READ instruction is independent
of both the WEN and WDS instructions.
The DO pin indicates the READY/BUSY status of the chip if CS is
broughthighafteraminimumtimeoftCS. DO=logical“0”indicates
that the register, at the address specified in the instruction, has
been erased, and the part is ready for another instruction.
Note: The Fairchild CMOS EEPROMs do not require an "ERASE" or "ERASE ALL"
operationpriortothe"WRITE"and"WRITEALL"instructions. The"ERASE"and"ERASE
ALL"instructionsareincludedtomaintaincompatibilitywithearliertechnologyEEPROMs.
Instruction Set for the FM93C66
Instruction
READ
SB
1
Op. Code
Address
A7-A0
Data
Comments
Reads data stored in memory, at specified address.
Write enable must precede all programming modes.
Erase selected register.
10
00
11
01
00
00
00
WEN
1
11xxxxxx
A7-A0
ERASE
WRITE
ERAL
1
1
A7-A0
D15-D0
D15-D0
Writes selected register.
1
10xxxxxx
01xxxxxx
00xxxxxx
Erases all registers.
WRALL
WDS
1
Writes all registers.
1
Disables all programming instructions.
X = Don't care.
5
www.fairchildsemi.com
FM93C66
Timing Diagrams
Synchronous Data Timing
V
IH
CS
SK
V
t
IL
CSS
t
t
t
CSH
SKH
SKL
t
SKS
V
IH
V
IL
t
t
DIH
DIS
V
IH
DI
V
IL
t
PD
t
DF
t
DH
V
OH
DO (READ)
V
OL
t
SV
t
t
DF
DH
V
OH
DO (PROGRAM)
STATUS VALID
V
OL
DS800027-4
READ
CS
SK
DI
t
CS
. . .
1
1
0
A7
A0
. . .
DO
0
D15
D0
DS800027-5
WEN
CS
SK
DI
t
CS
. . .
1
0
0
1
1
X
X
DS800027-6
WDS
CS
SK
DI
tCS
. . .
1
0
0
0
0
X
X
DS800027-7
6
www.fairchildsemi.com
FM93C66
Timing Diagrams (Continued)
WRITE
CS
SK
t
CS
. . .
1
0
1
A7
A0
D15
D0
DI
DO
BUSY
READY
t
WP
DS800027-8
WRALL
CS
SK
DI
t
CS
. . .
1
0
0
0
1
DON'T CARE (6 BITS) D15
D0
DO
BUSY
READY
t
WP
DS800027-9
ERASE
t
CS
CS
SK
STANDBY
. . .
DI
1
1
1
A7
A6
A5
A0
HI-Z
HI-Z
DO
BUSY
READY
t
WP
DS800027-10
ERAL
t
CS
CS
STANDBY
SK
DI
1
0
0
1
0
DON'T CARE BITS (6 BITS)
HI-Z
HI-Z
DO
BUSY
READY
t
WP
DS800027-11
7
www.fairchildsemi.com
FM93C66
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Out-Line Package (M8)
Package Number M08A
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
8
www.fairchildsemi.com
FM93C66
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
Deutsch
English
Français
Italiano
+49 (0) 8141-6102-0
+44 (0) 1793-856856
+33 (0) 1-6930-3696
+39 (0) 2-249111-1
2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
9
www.fairchildsemi.com
FM93C66
January 2000
FM93C66A
4K-Bit Serial CMOS EEPROM
(MICROWIRE™ Bus Interface)
General Description
Features
The FM93C66A is 4096 bits of CMOS nonvolatile EEPROM
(Electrically Erasable Programmable Read Only Memory) with
MICROWIRE serial interface. FM93C66A can be configured for
either 256 x 16 bit or 512 x 8 bit array using an organization (ORG)
inputpin.ThisdeviceisfabricatedusingFairchildSemiconductor's
floating gate CMOS process for high reliability, high endurance
and low power consumption. This device is available in 8-pin DIP,
SO and TSSOP packages.
I 2.7V to 5.5V operation in all modes
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I Self-timed programming cycle
I Device status indication during programming mode
I No erase required before write
The MICROWIRE serial interface offered by this EEPROM en-
ables simple interface to a wide variety of microcontrollers and
microprocessors. There are 7 instructions that operate the
FM93C66A: Read, Erase/Write Enable, Erase, Write, Erase/
Write Disable, Write All and Erase All.
I Reliable CMOS floating gate technology
I MICROWIRE compatible serial I/O
I 40 years data retention
I Endurance: 1,000,000 data changes
I Packages available: 8-pin TSSOP, 8-pin SO, 8-pin DIP
I Schmitt Trigger inputs and VCC lockout to prevent data
corruption
Block Diagram
CS
V
CC
Instruction
Decoder
SK
Control Logic,
And Clock
Generators
Instruction
Register
DI
High Voltage
Generator
And
Address
Register
ORG
Program
Timer
V
PP
EEPROM Array
2048 Bits
(256 x16) or (512 x8)
Decoder
1 of 256
(or 512)
Read/Write Amps
Data In/Out Register
16 (or 8) Bits
GND
Data Out Buffer
DO
DS800030-1
1
© 1999 Fairchild Semiconductor Corporation
FM93C66A Rev. A
www.fairchildsemi.com
Connection Diagram
Dual-In-Line Package (N)
8-Pin SO Package (M8)
and 8-Pin TSSOP Package (MT8)
1
2
3
4
8
7
6
5
CS
SK
DI
V
CC
NC
FM93C66A
Top View
ORG
DO
V
SS
DS800030-2
See Package Number
N08E, M08A and MTC08
Pin Names
Pin
Description
Chip Select
CS
SK
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
VSS
ORG
NC
VCC
Memory Organization Select
No Connect
Positive Power Supply
Ordering Information
FM
93
C
XX
A
LZ
E
XX
Letter Description
Package
N
8-Pin DIP
M8
MT8
8-Pin SO8
8-Pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
A
x8 or x16 Configuration
Density
66
C
4K
CMOS
Interface
93
FM
MICROWIRE
Fairchild Non-Volatile
Memory
2
www.fairchildsemi.com
FM93C66A Rev. A
Absolute Maximum Ratings (Note 1)
Ambient Storage Temperature
-65°C to +150°C
Operating Conditions
Ambient Operating Temperature
FM93C66A
All Input or Output Voltages
with Respect to Ground
VCC +1 to -0.3V
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
FM93C66AE
FM93C66AV
Lead Temperature
(Soldering, 10 seconds)
+300°C
Power Supply (VCC) Range
4.5V to 5.5V
ESD Rating
2000V
DC and AC Electrical Characteristics 4.5V ≤ VCC ≤ 5.5V
Symbol
Parameter
Part Number
Conditions
Min
Max
Units
ICCA
Operating Current
CS = VIH,SK=1 MHz
1
mA
ICCS
IIL
Standby Current
Input Leakage
CS = 0V ORG = VCC or NC
VIN = 0V to VCC (Note 2)
50
1
µA
µA
µA
-1
IILO
Input Leakage
ORG Pin
ORG Tied to VCC
ORG Tied to VSS
(Note 3)
-1
-2.5
1
2.5
IOL
VIL
Output Leakage
VIN = 0V to VCC
-1
-0.1
2
1
0.8
µA
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
SK Clock Frequency
SK High Time
VIH
VCC +1
0.4
V
VOL1
VOH1
VOL2
VOH2
fSK
IOL = 2.1 mA
IOH = -400 µA
IOL = 10 µA
IOL = -10 µA
(Note 4)
V
2.4
V
0.2
1
V
VCC - 0.2
0
V
MHz
ns
tSKH
FM93C66A
FM93C66AE
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
tCS
Minimum CS
Low Time
(Note 5)
250
ns
tCSS
tDH
CS Set-Up Time
DO Hold Time
DI Set-Up Time
50
70
ns
ns
ns
tDIS
FM93C66A
FM93C66AE/V
100
200
tCSH
tDIH
tPD
CS Hold Time
DI Hold Time
0
ns
ns
ns
ns
20
Output Delay
500
500
tSV
CS to Status Valid
tDF
CS to DO in Hi-Z
Write Cycle Time
100
10
ns
tWP
ms
3
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FM93C66A Rev. A
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Operating Temperature
Ambient Storage Temperature
–65°C to +150°C
FM93C66AL/LZ
FM93C66ALE/LZE
FM93C66ALV/LZV
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
2.7V to 5.5V
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
CS = VIH, SK = 250KHz
CS = VIL
1
mA
Standby Current
L
LZ
10
1
µA
µA
IIL
Input Leakage
VIN = 0V to VCC (Note 2)
1
µA
µA
IILO
Input Leakage
ORG Pin
ORG tied to VCC
ORG tied to VSS (Note 3)
-1
-2.5
1
2.5
IOL
Output Leakage
VIN = 0V to VCC
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8 VCC
0.15 VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
0.1 VCC
V
V
0.9 VCC
fSK
SK Clock Frequency
SK High Time
(Note 4)
0
1
250
KHz
µs
tSKH
tSKL
tSKS
SK Low Time
1
µs
SK Setup Time
SK must be at VIL for
tSKS before CS goes high
0.2
µs
tCS
Minimum CS
Low Time
(Note 5)
1
µs
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
CS Hold Time
DI Hold Time
0.2
70
0.4
0
µs
ns
µs
ns
µs
µs
µs
µs
ms
tDIS
tCSH
tDIH
tPD
0.4
Output Delay
2
1
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
0.4
15
tWP
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of the specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz
Symbol
Test
Typ Max Units
Note 2: Typical leakage values are in the 20 nA range.
Note 3: The ORG pin may draw > 1 µA when in the x8 mode ude to an internal pull-up transistor.
COUT
CIN
Output Capacitance
Input Capacitance
5
5
pF
pF
Note 4: The shortest allowable SK clock period = 1/fSK (as shown under the fSK fSK parameter).
Maximum SK clock speed (minimum SK period) is determined by the interaction of several AC
parameters stated in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed.
Therefore, it is not allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
Note 5: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all
internal device registers (device reset) prior to beginning another opcode cycle. (This is shown in
the opcode diagrams in the following pages.)
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
.03V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
(Extended Voltage Levels)
1.0V
10µA
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93C66A Rev. A
Serial Clock (SK):
MICROWIRE I/O Pin Description
This pin is the clock input (rising edge active) for clocking in all
opcodesanddataontheDIpinandclockingoutalldataontheDO
pin.However,thispinhasnoeffectontheasynchronousprogram-
ming cycle (see the CS pin section) as the READY/BUSY status
is a function of the CS pin only.
Chip Select (CS):
This pin enables and disables the MICROWIRE device and
performs 3 general functions:
1. When in the low state, the MICROWIRE device is disabled
and the output tri-stated (high impedance). If this pin is
brought high (rising edge active), all internal registers are
reset and the device is enabled, allowing MICROWIRE
communication via DI/DO pins. To restate, the CS pin must
be held high during all device communication and opcode
functions. If the CS pin is brought low, all functions will be
disabled and reset when CS is brought high again. The
exception to this is when a programming cycle is initiated
(see 2 and 3). Again, all activity on the CS, DI and DO pins
is ignored until CS is brought high.
Data-In (DI):
All serial communication into the device is performed using this
input pin (rising edge active). In order to avoid false Start Bits, or
related issues, it is advised to keep the DI pin in the low state
unless actually clocking in data bits (Start Bit, Opcode, Address or
incoming data bits to be programmed). Please note that the first
'1' clocked into the device (after CS is brought high) is seen as a
Start Bit and the beginning of a serial command string, so caution
must be observed when bringing CS high.
2. After entering all required opcode and address data, bringing
CS low initiates the (asynchronous) programming cycle.
Data-Out (DO):
All serial communication out of the device, Read Data ( during
normal reads) as well as READY/BUSY status indication ( during
programming ) are performed using this output pin. Note that,
during READ operations, the EEPROM device starts to drive the
DO output pin "active" after the last address bit (A0) is clocked in.
Hence in applications where 3-wire configuration is required (
whereDIandDOpinsaretiedtogether)cautionmustbeobserved
for correct operation. Please refer AN-758 for further information.
3. When programming is in progress, the Data-Out pin will
display the programming status as either BUSY (DO low) or
READY (DO high) when CS is brought high. (Again, the
output will be tri-stated when CS is low.) To restate, during
programming, the CS pin may be brought high and low any
number of times to view the programming status without
affect the programming operation. Once programming is
completed (Output in READY state), the output is 'cleared'
(returned to normal tri-state condition) by clocking in a Start
Bit. After the Start Bit is clocked in, the output will return to a
tri-stated condition. When clocked in, this Start Bit can be the
first bit in a command string, or CS can be brought low again
to reset all internal circuits.
Organization (ORG):
This pin controls the device architecture (8-bit data word vs. 16-bit
data word). If the ORG pin is brought to VCC, the device is
configured with a 16-bit data word and if the ORG pin is brought
to VSS (Ground), the device is configured with an 8-bit data word.
If the ORG pin is left floating, the device will default to a 16-bit data
word.
Instruction Set for FM93C66A
ORG
Memory
Pin
Logic
Configuration
# of Address Bits
0
1
512 x 8
9 Bits
8 Bits
256 x 16
5
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FM93C66A Rev. A
256 by 16-Bit Organization (FM93C66A when ORG = VCC or NC)
Instruction
SB
OP-Code
2 Bits
Address
8 Bits
Data
16 Bits
Comments
READ
EWEN
EWDS
ERASE
WRITE
ERAL
1
1
1
1
1
1
1
10
00
00
11
01
00
00
A7–A0
11XXXXXX
00XXXXXX
A7–A0
Read data stored in selected registers.
Enables programming modes.
Disables all programming modes.
Erase selected register.
A7–A0
D15–D0
D15–D0
Writes data pattern D15–D0 into selected register.
Erases all registers.
10XXXXXX
01XXXXXX
WRAL
Writes data pattern D15–D0 into all registers.
X = Don't care.
512 by 8-Bit Organization (FM93C66A when ORG = GND)
Instruction
SB
OP-Code
2 Bits
Address
9 Bits
Data
8 Bits
Comments
READ
EWEN
EWDS
ERASE
WRITE
ERAL
1
1
1
1
1
1
1
10
00
00
11
01
00
00
A8–A0
11XXXXXXX
00XXXXXXX
A8–A0
Read data stored in selected registers.
Enables programming modes.
Disables all programming modes.
Erase selected register.
A8–A0
D7–D0
D7–D0
Writes data pattern D7–D0 into selected register.
Erases all registers.
10XXXXXXX
01XXXXXXX
WRAL
Writes data pattern D7–D0 into all registers.
X = Don't care.
Read (READ):
Functional Description
The READ instruction outputs serial data on the DO pin. After a
READ instruction is received, the instruction and address are
decoded, followed by data transfer from the selected memory
register into a serial-out shift register. A dummy bit (logical 0)
precedes the serial data output string. Output data changes are
initiated by a low to high transition of SK after the last address bit
(A0) is clocked in.
Programming:
1. Programming is initiated by clocking in the Start Bit, Opcode
bits, Address bits and the 8/16 data bits (refer to the ORG
pin section).
2. Programming is started by bringing the CS pin low. Once the
programming cycle is started, it cannot be stopped. (Bringing
VCC low will stop any programming, but will also result in
data corruption.)
Erase/Write Enable (EWEN):
When VCC is applied to the part, it “powers up” in the Erase/Write
Disable (EWDS) state. Therefore, all programming modes must
be preceded by an Erase/Write Enable (EWEN) instruction. Once
an Erase/Write Enable instruction is executed, programming
remains enabled until an Erase/Write Disable (EWDS) instruction
is executed or VCC is removed from the part.
3. The status of the programming cycle (BUSY or READY) is
observed by bringing the CS pin high and observing the
output state. If the output is LOW, the device is still program-
ming (BUSY). If the output is HIGH, the programming cycle
has been completed and the device is ready for the next
operation. Note that the output will be tri-stated each time
CS is brought low and the READY/BUSY status will be
shown each time CS is brought high.
4. After programming, the READY state (output HIGH) can be
reset and the output tri-stated by clocking in a single Start
Bit. This Start Bit can be the first bit in a command string, or
CS can be brought low again to reset all internal circuits. In
any case, clocking in a '1' bit will tri-state the output.
6
www.fairchildsemi.com
FM93C66A Rev. A
Write (WRITE):
Functional Description (Continued)
The WRITE instruction is followed by 16 bits of data (or 8 bits of
data when using the FM93C66A in the x8 organization) to be
written into the specified address. Please refer to the Program-
ming section for details.
Erase/Write Disable (EWDS):
To protect against accidental data overwrites, the Erase/Write
Disable (EWDS) instruction disables all programming modes and
should follow all programming operations. Execution of a READ
instruction is independent of both the EWEN and EWDS instruc-
tions.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in
the memory array to the logical “1” state.
Erase (ERASE):
Write All (WRAL):
The ERASE instruction will program all bits in the specified
register to the logical “1” state. Please refer to the Programming
section for details.
The WRAL instruction will simultaneously program all registers
with the data pattern specified in the instruction.
Timing Diagrams for the FM93C66A
Synchronous Data Timing
V
IH
CS
SK
V
t
IL
CSS
t
t
t
CSH
SKH
SKL
t
SKS
V
IH
V
IL
t
t
DIH
DIS
V
IH
DI
V
IL
t
PD
t
DF
t
DH
V
OH
DO (READ)
V
OL
t
SV
t
t
DF
DH
V
OH
DO (PROGRAM)
STATUS VALID
V
OL
DS800030-4
7
www.fairchildsemi.com
FM93C66A Rev. A
Timing Diagrams for the FM93C66A (Continued)
Key for Timing Diagrams
Organization of Address and Data Fields for the FM93C66A
ORG Pin
VCC or NC
VSS
Organization
256 x 16
AN DN
A7
A8
D15
D7
512 x 8
READ
CS
SK
DI
tCS
. . .
1
1
0
A
N
A0
. . .
DO
0
DN
D0
DS800030-5
EWEN
DO = HI-Z
t
CS
SK
DI
CS
. . .
X
X
1
0
0
1
1
ORG = V , 4 X'S
CC
DS800030-6
ORG = V , 5 X'S
SS
EWDS
DO = HI-Z
t
CS
SK
DI
CS
. . .
X
X
1
0
0
0
0
ORG = V , 4 X'S
CC
DS800030-7
ORG = V , 5 X'S
SS
8
www.fairchildsemi.com
FM93C66A Rev. A
Timing Diagrams for the FM93C66A (Continued)
ERASE
tCS
CS
SK
Standby
DI
. . .
AN
1
1
1
A0
HI-Z
HI-Z
Busy
Ready
DO
DS800030-8
tWP
WRITE
tCS
CS
SK
DI
. . .
. . .
1
0
1
AN
A0 DN
D0
Busy
tWP
Ready
DO
DS800030-9
ERAL
tCS
CS
SK
DI
STANDBY
. . .
1
0
0
1
0
X
X
ORG = VCC, 4 X's
ORG = VSS, 5 X's
READY
DO
BUSY
DS800030-10
READY STATUS SIGNAL RESETS
TO HI-Z AFTER CLOCKING IN
ONE SK CYCLE WITH DI = 1
tWP
WRAL
tCS
CS
SK
STANDBY
. . .
. . .
D0
1
0
0
0
1
X
X
DN
DI
ORG = VCC, 4 X's
ORG = VSS, 5 X's
READY
DO
BUSY
READY STATUS SIGNAL RESETS
TO HI-Z AFTER CLOCKING IN
ONE SK CYCLE WITH DI = 1
tWP
DS800030-11
9
www.fairchildsemi.com
FM93C66A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Outline Package (M8)
Package Number M08A
10
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FM93C66A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
11
www.fairchildsemi.com
FM93C66A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
Deutsch
English
Français
Italiano
+49 (0) 8141-6102-0
+44 (0) 1793-856856
+33 (0) 1-6930-3696
+39 (0) 2-249111-1
2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
12
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FM93C66A Rev. A
January 2000
FM93C86A
16K-Bit Serial EEPROM
(MICROWIRE™ Bus Interface)
General Description
Features
The FM93C86A is 16,384 bits of CMOS nonvolatile EEPROM
(Electrically Erasable Programmable Read Only Memory) with
MICROWIRE serial interface. FM93C86A can be configured for
either 1024 x 16 bit or 2048 x 8 bit array using an organization
(ORG) input pin. This device is fabricated using Fairchild
Semiconductor's floating gate CMOS process for high reliability,
high endurance and low power consumption. This device is
available in 8-pin DIP and SO packages.
I 2.7V to 5.5V operation in all modes
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I Device status indication during programming mode
I No erase required before write
I Reliable CMOS floating gate technology
I MICROWIRE™ compatible serial I/O
I Self-timed programming cycle
The MICROWIRE serial interface offered by this EEPROM en-
ables simple interface to a wide variety of microcontrollers and
microprocessors. There are 7 instructions that operate the
FM93C86A: Read, Erase/Write Enable, Erase, Write, Erase/
Write Disable, Write All and Erase All.
I 40 years data retention
I Endurance: 1,000,000 data changes
I Packages available: 8-pin SO, 8-pin DIP
I Schmitt Trigger inputs and VCC lockout to prevent data
corruption
Block Diagram
CS
V
CC
Instruction
Decoder
SK
Control Logic,
And Clock
Generators
Instruction
Register
DI
High Voltage
Generator
And
Address
Register
ORG
Program
Timer
V
PP
EEPROM Array
16384 Bits
(1024x16) or (2048x8)
Decoder
1 of 1024
(or 2048)
Read/Write Amps
Data In/Out Register
16 (or 8) Bits
GND
Data Out Buffer
DO
DS800031-12
1
© 1999 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FM93C86A Rev. A
Connection Diagram
Dual-In-Line Package (N)
and 8-Pin SO Package (M8)
CS
SK
DI
1
2
3
4
8
7
6
5
VCC
NC
NM93C86A
ORG
VSS
DO
DS800031-14
Top View
See Package Number
N08E and M08A
Pin Names
Pin
Description
CS
SK
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
VSS
ORG
NC
Memory Organization Select
No Connect
VCC
Positive Power Supply
Ordering Information
FM
93
C
XX
A
LZ
E
XX
Letter Description
Package
N
M8
8-Pin DIP
8-Pin SO8
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
A
x8 or x16 Configuration
16K
Density
86
C
CMOS
Interface
93
FM
MICROWIRE
Fairchild Non-Volatile
Memory
2
www.fairchildsemi.com
FM93C86A Rev. A
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93C86A
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
FM93C86AE
FM93C86AV
VCC + 1 to -0.3V
Lead Temperature
Power Supply (VCC) Range
4.5V to 5.5V
(Soldering, 10 seconds)
+300°C
ESD Rating
2000V
DC and AC Electrical Characteristics 4.5V ≤ VCC ≤ 5.5V
Symbol
Parameter
Part Number
Conditions
Min
Max
Units
ICCA
Operating Current
CS = VIH, SK=1 MHz
1
mA
ICCS
IIL
Standby Current
Input Leakage
CS = 0V ORG = VCC or NC
VIN = 0V to VCC (Note 2)
50
1
µA
µA
-1
IILO
Input Leakage ORG Pin
ORG tied to VCC
ORG tied to VSS
(Note 3)
-1
-2.5
1
2.5
µA
IOL
VIL
Output Leakage
VIN = 0V to VCC
-1
-0.1
2
1
0.8
µA
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
SK Clock Frequency
SK High Time
VIH
VCC +1
0.4
V
VOL1
VOH1
VOL2
VOH2
fSK
IOL = 2.1 mA
IOH = -400 µA
IOL = 10 µA
IOL = -10 µA
(Note 4)
V
2.4
V
0.2
1
V
VCC - 0.2
0
V
MHz
ns
tSKH
FM93C86A
FM93C86AE/V
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
SK must be at VIL for
tSKS before CS goes
high
tCS
Minimum CS Low Time
(Note 5)
250
ns
tCSS
tDH
CS Set-up Time
DO Hold Time
50
70
ns
ns
tDIS
DI Set-up Time
FM93C86A
FM93C86AE/V
100
200
ns
tCSH
tDIH
tPD
tSV
CS Hold Time
DI Hold Time
0
ns
ns
20
Output Delay
500
500
ns
ns
CS to Status Valid
tDF
CS to DO in Hi-Z
Write Cycle Time
100
10
ns
tWP
ms
3
www.fairchildsemi.com
FM93C86A Rev. A
Absolute Maximum Ratings (Note 1)
Operating Range
Ambient Operating Temperature
Ambient Storage Temperature
–65°C to +150°C
FM93C86AL/LZ
FM93C86ALE/LZE
FM93C86ALV/LZV
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltage
with Respect to Ground
+6.5V to -0.3V
Lead Temperature (Soldering, 10 sec.)
ESD Rating
+300°C
Power Supply (VCC
)
2.7V to 5.5V
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol
Parameter
Part Number
Conditions
Min.
Max.
Units
ICCA
ICCS
Operating Current
CS = VIH, SK = 250KHz
CS = VIL
1
mA
Standby Current
L
LZ
10
1
µA
µA
IIL
Input Leakage
VIN = 0V to VCC (Note 2)
1
µA
µA
IILO
Input Leakage
ORG Pin
ORG tied to VCC
ORG tied to VSS (Note 3)
-1
-2.5
1
2.5
IOL
Output Leakage
VIN = 0V to VCC
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8 VCC
0.15 VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10 µA
IOH = -10 µA
0.1 VCC
V
V
0.9 VCC
fSK
SK Clock Frequency
SK High Time
(Note 4)
0
1
250
KHz
µs
tSKH
tSKL
tSKS
SK Low Time
1
µs
SK Setup Time
SK must be at VIL for
tSKS before CS goes high
0.2
µs
tCS
Minimum CS
Low Time
(Note 5)
1
µs
tCSS
tDH
CS Setup Time
DO Hold Time
DI Setup Time
CS Hold Time
DI Hold Time
0.2
70
0.4
0
µs
ns
µs
ns
µs
µs
µs
µs
ms
tDIS
tCSH
tDIH
tPD
0.4
Output Delay
2
1
tSV
CS to Status Valid
CS to DO in Hi-Z
Write Cycle Time
tDF
CS = VIL
0.4
15
tWP
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of the specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz
Symbol
Test
Typ Max Units
Note 2: Typical leakage values are in the 20 nA range.
Note 3: The ORG pin may draw > 1 µA when in the x8 mode ude to an internal pull-up transistor.
COUT
CIN
Output Capacitance
Input Capacitance
5
5
pF
pF
Note 4: The shortest allowable SK clock period = 1/fSK (as shown under the fSK fSK parameter).
Maximum SK clock speed (minimum SK period) is determined by the interaction of several AC
parameters stated in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed.
Therefore, it is not allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
Note 5: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all
internal device registers (device reset) prior to beginning another opcode cycle. (This is shown in
the opcode diagrams in the following pages.)
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
.03V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
(Extended Voltage Levels)
1.0V
10µA
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93C86A Rev. A
Serial Clock (SK):
MICROWIRE I/O Pin Description
This pin is the clock input (rising edge active) for clocking in all
opcodesanddataontheDIpinandclockingoutalldataontheDO
pin.However,thispinhasnoeffectontheasynchronousprogram-
ming cycle (see the CS pin section) as the BUSY/READY status
is a function of the CS pin only.
Chip Select (CS):
This pin enables and disables the MICROWIRE device and
performs 2 general functions:
1. When in the low state, the MICROWIRE device is disabled
and the output tri-stated (high impedance). If this pin is
brought high (rising edge active), all internal registers are
reset and the device is enabled, allowing MICROWIRE
communication via DI/DO pins. To restate, the CS pin must
be held high during all device communication and opcode
functions. If the CS pin is brought low, all functions will be
disabled and reset when CS is brought high again. The
exception to this is when a programming cycle is initiated.
Again, all activity on the CS, DI and DO pins is ignored until
CS is brought high.
Data-In (DI):
All serial communication into the device is performed using this
input pin (rising edge active). In order to avoid false Start Bits, or
related issues, it is advised to keep the DI pin in the low state
unless actually clocking in data bits (Start Bit, Opcode, Address or
incoming data bits to be programmed). Please note that the first
'1' clocked into the device (after CS is brought high) is seen as a
Start Bit and the beginning of a serial command string, so caution
must be observed when bringing CS high.
2. When programming is in progress, the Data-Out pin will
display the programming status as either BUSY (DO low) or
READY (DO high) when CS is brought high. (Again, the
output will be tri-stated when CS is low.) To restate, during
programming, the CS pin may be brought high and low any
number of times to view the programming status without
affect the programming operation. Once programming is
completed (Output in READY state), the output is 'cleared'
(returned to normal tri-state condition) by clocking in a Start
Bit. After the Start Bit is clocked in, the output will return to a
tri-stated condition. When clocked in, this Start Bit can be the
first bit in a command string, or CS can be brought low again
to reset all internal circuits.
Data-Out (DO):
All serial communication out of the device, Read Data ( during
normal reads) as well as READY/BUSY status indication ( during
programming ) are performed using this output pin. Note that,
during READ operations, the EEPROM device starts to drive the
DO output pin "active" after the last address bit (A0) is clocked in.
Hence in applications where 3-wire configuration is required (
whereDIandDOpinsaretiedtogether)cautionmustbeobserved
for correct operation. Please refer AN-758 for further information.
Organization (ORG):
This pin controls the device architecture (8-bit data word vs. 16-bit
data word). If the ORG pin is brought to VCC, the device is
configured with a 16-bit data word and if the ORG pin is brought
to VSS (Ground), the device is configured with an 8-bit data word.
If the ORG pin is left floating, the device will default to a 16-bit data
word.
Unlike the lower density members of the Microwire product
family (FM93C06, FM93C46, FM93C56, FM93C66)
programming is not initiated by bringing CS low but initiated
as soon as the last bit of information (address bit or data bit
depending on the instruction type) is clocked in. Refer the
section on Programming for further detail.
Instruction Set for the FM93C86A
ORG
Memory
Pin
Logic
Configuration
# of Address Bits
0
1
2048 x 8
11 Bits
10 Bits
1024 x 16
5
www.fairchildsemi.com
FM93C86A Rev. A
1024 by 16-Bit Organization (FM93C86A when ORG = VCC or NC)
Instruction SB Op Code Address
Data
Function
2 Bits
10
10 Bits
16 Bits
READ
EWEN
EWDS
ERASE
WRITE
ERAL
1
1
1
1
1
1
1
A9–A0
Read data stored in selected registers.
Enables programming modes.
00
11XXXXXXXX
00XXXXXXXX
A9–A0
00
Disables all programming modes.
Erases selected register.
11
01
A9–A0
D15–D0
D15–D0
Writes data pattern D15–D0 into selected register.
Erases all registers.
00
10XXXXXXXX
01XXXXXXXX
WRAL
00
Writes data pattern D15–D0 into all registers.
X = Don't care.
2048 by 8-Bit Organization (FM93C86A when ORG = GND)
Instruction SB Op Code Address
Data
Function
2 Bits
10
11 Bits
8 Bits
READ
EWEN
EWDS
ERASE
WRITE
ERAL
1
1
1
1
1
1
1
A10–A0
Read data stored in selected registers.
Enables programming modes.
00
11XXXXXXXXX
00XXXXXXXXX
A10–A0
00
Disables all programming modes.
Erases selected register.
11
01
A10–A0
D7–D0
D7–D0
Writes data pattern D7–D0 into selected register.
Erases all registers.
00
10XXXXXXXXX
01XXXXXXXXX
WRAL
00
Writes data pattern D7–D0 into all registers.
X = Don't care.
BUSYstatusofthedevice.DO=logical“0”indicatesthatprogram-
ming is still in progress and no other instruction can be executed.
DO = logical “1” indicates that the device is READY for another
instruction. If CS is forced “low” the DO pin will return to the high
impedance state. After the programming cycle has been com-
pleted and DO = logical “1”, the DO pin can be reset back to the
high impedance state by clocking a logical “1” into the DI pin. (This
is also performed with the start bit on all op codes, thus clocking
an instruction has the same effect.)
Functional Description
Programming
The programming cycle is automatically started after entering the
LAST bit of the programming instruction string (unlike other
Microwire family members which use the falling edge of CS to
initiate programming). This feature, counting the number of in-
struction bits, decreases the likelihood of inadvertent program-
ming and allows the programming to be cancelled before sending
out the last bit in the string (by bringing CS low).
Read (READ)
The READ instruction outputs serial data on the DO pin. After a
READ instruction is received, the instruction and address are
decoded, followed by data transfer from the selected memory
register into a serial-out shift register. A dummy bit (logical 0)
precedes the serial data output string. Output data changes are
initiatedbyalowtohightransitionofSKclockafterthelastaddress
bit (A0) is clocked in.
Programming Instruction Last Bit in String
WRITE
WRAL
ERASE
ERAL
D0
D0
A0
A0
Erase/Write Enable (EWEN)
Note that, in the ERASE/ERAL instructions, the A0 bit is the last
bit in the string and clocking in that bit will initiate programming. In
order to maintain compatibility, CS may be brought low after
clocking in the last bit, but it is not necessary.
When VCC is applied to the part, it “powers up” in the Erase/Write
Disable (EWDS) state. Therefore, all programming modes must
be preceded by an Erase/Write Enable (EWEN) instruction. Once
an Erase/Write Enable instruction is executed, programming
remains enabled until an Erase/Write Disable (EWDS) instruction
is executed or VCC is removed from the part.
In all programming modes the READY/BUSY status of the device
can be determined by polling the DO pin. After clocking in the last
bit of the instruction sequence and with the CS held “high”, the DO
pin will exit the high impedance state and indicate the READY/
6
www.fairchildsemi.com
FM93C86A Rev. A
instruction will be aborted. The self-timed programming cycle is
initiated on the rising edge of the SK clock as the last data bit (D0)
is clocked in. At this point, CS, SK and DI become don’t care
states. No separate ERASE cycle is required before a WRITE
instruction.
Functional Description (Continued)
Erase/Write Disable (EWDS)
To protect against accidental data overwrites, the Erase/Write
Disable (EWDS) instruction disables all programming modes and
should follow all programming operations. Execution of a READ
instruction is independent of both the EWEN and EWDS instruc-
tions.
As in the ERASE instruction, after starting a WRITE cycle, the DO
pin indicates the READY/BUSY status of the chip if CS is held
“high”. DO = logical “0” indicates that programming is still in
progress. DO = logical “1” indicates that the register, at the
address specified in the instruction, has been written and that the
part is ready for another instruction.
Erase (ERASE)
The ERASE instruction will program all bits in the specified
register to the logical “1” state. The self-timed programming cycle
is initiated on the rising edge of the SK clock as the last address
bit(A0)isclockedin.AtthispointCS,SKandDIbecomedon’tcare
states. After starting an Erase cycle the DO pin indicates the
READY/BUSY status of the chip if CS is held “high”. DO = logical
“0” indicates that programming is still in progress. DO = logical “1”
indicates that the register, at the address specified in the instruc-
tion, has been erased.
Erase All (ERAL)
The ERAL instruction will simultaneously program all registers in
the memory array to the logical “1” state.
Write All (WRAL)
The WRAL instruction will simultaneously program all registers
with the data pattern specified in the instruction.
Write (WRITE)
The WRITE instruction is followed by 16 bits of data (or 8 bits of
data when using the FM93C86A in the x8 organization) to be
written into the specified address. Note that if the CS is brought
“low” before clocking in all of the data bits, then the WRITE
Timing Diagrams for the FM93C86A
Synchronous Data Timing
V
IH
CS
SK
V
t
IL
CSS
t
t
t
CSH
SKH
SKL
t
SKS
V
IH
V
IL
t
t
DIH
DIS
V
IH
DI
V
IL
t
PD
t
DF
t
DH
V
OH
DO (READ)
V
OL
t
SV
t
t
DF
DH
V
OH
DO (PROGRAM)
STATUS VALID
V
OL
DS800031-3
7
www.fairchildsemi.com
FM93C86A Rev. A
Timing Diagrams for the FM93C86A (Continued)
Key for Timing Diagrams
Organization of Address and Data Fields for the FM93C86A
ORG
VCC or NC
VSS
Organization
1024 x 16
AN
A9
DN
D15
D7
2048 x 8
A10
READ
CS
SK
DI
t
CS
. . .
1
1
0
AN
A
0
. . .
DO
0
D
D
0
N
DS800031-4
DS800031-5
DS800031-6
EWEN
DO = HI-Z
t
CS
CS
SK
DI
. . .
X
X
1
0
0
1
1
ORG = V , 4 X’S
CC
ORG = V , 5 X’S
SS
EWDS
DO = HI-Z
tCS
CS
SK
DI
. . .
X
X
1
0
0
0
0
ORG = V , 4 X’S
CC
ORG = V , 5 X’S
SS
ERASE
tCS
CS
SK
Standby
DI
. . .
A0
AN
1
1
1
HI-Z
HI-Z
Busy
Ready
DO
tWP
DS800031-7
8
www.fairchildsemi.com
FM93C86A Rev. A
Timing Diagrams for the FM93C86A (Continued)
WRITE
tCS
CS
SK
. . .
. . .
1
0
1
AN
A0 DN
D0
DI
Busy
Ready
DO
tWP
DS800031-8
ERAL
tCS
CS
STANDBY
SK
DI
. . .
1
0
0
1
0
X
X
ORG = VCC, 4 X's
ORG = VSS, 5 X's
READY
DO
BUSY
READY STATUS SIGNAL RESETS
TO HI-Z AFTER CLOCKING IN
ONE SK CYCLE WITH DI = 1
tWP
DS800031-9
WRAL
tCS
CS
SK
DI
STANDBY
. . .
. . .
D0
1
0
0
0
1
X
X
DN
ORG = VCC, 4 X's
ORG = VSS, 5 X's
READY
BUSY
DO
READY STATUS SIGNAL RESETS
TO HI-Z AFTER CLOCKING IN
ONE SK CYCLE WITH DI = 1
tWP
DS800031-10
9
www.fairchildsemi.com
FM93C86A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Small Outline Package (M8)
Package Number M08A
10
www.fairchildsemi.com
FM93C86A Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-in-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
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Kowloon. Hong Kong
Tel; +852-2722-8338
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Deutsch
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+49 (0) 8141-6102-0
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Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
11
www.fairchildsemi.com
FM93C86A Rev. A
February 2000
FM93CS06
(MICROWIRE™ Bus Interface) 256-Bit Serial EEPROM
with Data Protect and Sequential Read
General Description
Features
FM93CS06 is a 256-bit CMOS non-volatile EEPROM organized
as 16 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat-
ible to many of standard Microcontrollers and Microprocessors.
FM93CS06 offers programmable write protection to the memory
array using a special register called Protect Register. Selected
memory locations can be protected against write by programming
this Protect Register with the address of the first memory location
to be protected (all locations greater than or equal to this first
addressarethenprotectedfromfurtherchange). Additionally, this
address can be “permanently locked” into the device, making all
future attempts to change data impossible. In addition this device
features “sequential read”, by which, entire memory can be read
in one cycle instead of multiple single byte read cycles. There are
10 instructions implemented on the FM93CS06, 5 of which are for
memory operations and the remaining 5 are for Protect Register
operations. This device is fabricated using Fairchild Semiconduc-
torfloating-gateCMOSprocessforhighreliability,highendurance
and low power consumption.
I Wide VCC 2.7V - 5.5V
I Programmable write protection
I Sequential register read
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I No Erase instruction required before Write instruction
I Self timed write cycle
I Device status during programming cycles
I 40 year data retention
I Endurance: 1,000,000 data changes
I Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
“LZ” and “L” versions of FM93CS06 offer very low standby current
makingthemsuitableforlowpowerapplications.Thisdeviceisoffered
in both SO and TSSOP packages for small space considerations.
Functional Diagram
VCC
CS
SK
INSTRUCTION
DECODER
CONTROL LOGIC
AND CLOCK
PRE
PE
INSTRUCTION
REGISTER
DI
GENERATORS
COMPARATOR
AND
WRITE ENABLE
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
ADDRESS
REGISTER
PROTECT
REGISTER
DECODER
EEPROM ARRAY
16
READ/WRITE AMPS
16
VSS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
1
© 1999 Fairchild Semiconductor Corporation
FM93CS06 Rev. A
www.fairchildsemi.com
Connection Diagram
Dual-In-Line Package (N)
8–Pin SO (M8) and 8–Pin TSSOP (MT8)
1
2
3
4
8
7
6
5
CS
SK
DI
VCC
PRE
PE
DO
GND
Top View
Package Number
N08E, M08A and MTC08
Pin Names
CS
SK
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
GND
PE
Program Enable
Protect Register Enable
Power Supply
PRE
VCC
Ordering Information
FM
93
CS XX LZ
E
XXX
Letter Description
Package
N
8-pin DIP
M8
MT8
8-pin SO
8-pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Density
06
256 bits
C
CMOS
CS
Data protect and sequential
read
Interface
93
MICROWIRE
Fairchild Memory Prefix
2
www.fairchildsemi.com
FM93CS06 Rev. A
Absolute Maximum Ratings (Note 1)
Operating Conditions
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93CS06
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
+6.5V to -0.3V
FM93CS06E
FM93CS06V
Lead Temperature
(Soldering, 10 sec.)
+300°C
Power Supply (VCC
)
4.5V to 5.5V
ESD rating
2000V
DC and AC Electrical Characteristics VCC = 4.5V to 5.5V unless otherwise specified
SymbolParameter
Conditions
Min
Max
Units
ICCA
Operating Current
CS = VIH, SK=1.0 MHz
1
mA
ICCS
Standby Current
CS = VIL
50
-1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
2
0.8
VCC +1
V
V
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL = 2.1 mA
IOH = -400 µA
IOL = 10 µA
IOH = -10 µA
(Note 3)
0.4
0.2
1
2.4
VOL2
VOH2
Output Low Voltage
Output High Voltage
VCC - 0.2
fSK
SK Clock Frequency
SK High Time
MHz
ns
tSKH
0°C to +70°C
-40°C to +125°C
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
tCS
Minimum CS Low Time
(Note 4)
250
ns
tCSS
tPRES
tDH
CS Setup Time
PRE Setup Time
DO Hold Time
PE Setup Time
DI Setup Time
100
50
ns
ns
ns
ns
ns
70
tPES
tDIS
50
100
tCSH
tPEH
tPREH
tDIH
CS Hold Time
PE Hold Time
PRE Hold Time
DI Hold Time
Output Delay
0
ns
ns
ns
ns
ns
250
50
20
tPD
500
500
tSV
CS to Status Valid
ns
tDF
CS to DO in Hi-Z
Write Cycle Time
CS = VIL
100
10
ns
tWP
ms
3
www.fairchildsemi.com
FM93CS06 Rev. A
Absolute Maximum Ratings (Note 1)
Operating Conditions
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93CS06L/LZ
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
+6.5V to -0.3V
FM93CS06LE/LZE
FM93CS06LV/LZV
Lead Temperature
(Soldering, 10 sec.)
+300°C
Power Supply (VCC
)
2.7V to 5.5V
ESD rating
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
SymbolParameter
Conditions
Min
Max
Units
ICCA
Operating Current
CS = VIH, SK=1.0 MHz
1
mA
ICCS
Standby Current
L
CS = VIL
10
1
µA
µA
LZ (2.7V to 4.5V)
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8VCC
0.15VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10µA
IOH = -10µA
0.1VCC
V
0.9VCC
fSK
SK Clock Frequency
SK High Time
(Note 3)
0
1
250
KHz
µs
µs
tSKH
tSKL
tSKS
SK Low Time
1
SK Setup Time
0.2
µs
tCS
Minimum CS Low Time
(Note 4)
1
µs
tCSS
tPRES
tDH
CS Setup Time
PRE Setup Time
DO Hold Time
PE Setup Time
DI Setup Time
0.2
50
70
50
0.4
µs
ns
ns
ns
µs
tPES
tDIS
tCSH
tPEH
tPREH
tDIH
CS Hold Time
PE Hold Time
PRE Hold Time
DI Hold Time
Output Delay
0
ns
ns
ns
µs
µs
250
50
0.4
tPD
2
1
tSV
CS to Status Valid
µs
tDF
CS to DO in Hi-Z
Write Cycle Time
CS = VIL
0.4
15
µs
ms
tWP
Note 1: Stressabovethoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditionsabovethoseindicatedintheoperationalsectionsofthespecificationisnotimplied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz (Note 5)
Note 2: Typical leakage values are in the 20nA range.
SymbolTest
Typ Max Units
Note 3: TheshortestallowableSKclockperiod=1/fSK (asshownunderthefSK parameter). Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not
allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
COUT
CIN
Output Capacitance
Input Capacitance
5
pF
pF
5
Note 4: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all internal
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
0.3V/1.8V
VIL/VIH
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
Timing Level
2.7V ≤ VCC ≤ 5.5V
1.0V
10µA
(Extended Voltage Levels)
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93CS06 Rev. A
Program Enable (PE)
Pin Description
This is an active high input pin to the device and is used to enable
operations, that are write in nature, to the memory array and to the
Protect register. When this pin is held high, operations that are
“write” in nature are enabled. When this pin is held low, operations
that are “write” in nature are disabled. This pin operates in
conjunctionwithPREpin. ReferTable1forfunctionalmatrixofthis
pin for various operations.
Chip Select (CS)
ThisisanactivehighinputpintoFM93CS06EEPROM(thedevice)
and is generated by a master that is controlling the device. A high
level on this pin selects the device and a low level deselects the
device. All serial communications with the device is enabled only
when this pin is held high. However this pin cannot be permanently
tied high, as a rising edge on this signal is required to reset the
internal state-machine to accept a new cycle and a falling edge to
initiateaninternalprogrammingafterawritecycle.Allactivityonthe
SK, DI and DO pins are ignored while CS is held low.
Microwire Interface
AtypicalcommunicationontheMicrowirebusismadethroughthe
CS, SK, DI and DO signals. To facilitate various operations on the
Memory array and on the Protect Register, a set of 10 instructions
are implemented on FM93CS06. The format of each instruction is
listed in Table 1.
Serial Clock (SK)
Thisisaninputpintothedeviceandisgeneratedbythemasterthat
is controlling the device. This is a clock signal that synchronizes the
communicationbetweenamasterandthedevice. Allinputinforma-
tion(DI)tothedeviceislatchedontherisingedgeofthisclockinput,
whileoutputdata(DO)fromthedeviceisdrivenfromtherisingedge
of this clock input. This pin is gated by CS signal.
Instruction
Each of the above 10 instructions is explained under individual
instruction descriptions.
Start Bit
Serial Input (DI)
This is a 1-bit field and is the first bit that is clocked into the device
whenaMicrowirecyclestarts.Thisbithastobe“1”foravalidcycle
to begin. Any number of preceding “0” can be clocked into the
device before clocking a “1”.
This is an input pin to the device and is generated by the master
that is controlling the device. The master transfers Input informa-
tion (Start bit, Opcode bits, Array addresses and Data) serially via
this pin into the device. This Input information is latched on the
rising edge of the SCK. This pin is gated by CS signal.
Opcode
Serial Output (DO)
This is a 2-bit field and should immediately follow the start bit.
These two bits (along with PRE, PE signals and 2 MSB of address
field) select a particular instruction to be executed.
This is an output pin from the device and is used to transfer Output
data via this pin to the controlling master. Output data is serially
shifted out on this pin from the rising edge of the SCK. This pin is
active only when the device is selected.
Address Field
This is a 6-bit field and should immediately follow the Opcode bits.
In FM93CS06, only the LSB 4 bits are used for address decoding
during READ, WRITE and PRWRITE instructions. During these
instructions (READ, WRITE and PRWRITE), the MSB 2 bits are
"don't care" (can be 0 or 1). During all other instructions (with the
exception of PRREAD), the MSB 2 bits are used to decode
instruction (along with Opcode bits, PRE and PE signals).
Protect Register Enable (PRE)
This is an active high input pin to the device and is used to
distinguish operations to memory array and operations to Protect
Register. When this pin is held low, operations to the memory
array are enabled. When this pin is held high, operations to the
Protect Register are enabled. This pin operates in conjunction
with PE pin. Refer Table1 for functional matrix of this pin for
various operations.
Data Field
This is a 16-bit field and should immediately follow the Address
bits. Only the WRITE and WRALL instructions require this field.
D15 (MSB) is clocked first and D0 (LSB) is clocked last (both
during writes as well as reads).
TABLE 1. Instruction set
Instruction
READ
Start Bit
Opcode Field
Address Field
Data Field PRE Pin
PE Pin
1
1
1
1
1
1
1
1
1
1
10
00
01
00
00
10
00
11
01
00
X
1
X
0
0
X
1
1
X
0
X
1
X
1
0
X
1
1
X
0
A3 A2 A1 A0
0
0
X
1
1
1
X
X
1
1
1
1
WEN
X
X
X
X
WRITE
WRALL
WDS
A3 A2 A1 A0
D15-D0
D15-D0
0
0
0
1
1
1
1
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
PRREAD
PREN
PRCLEAR
PRWRITE
PRDS
A3 A2 A1 A0
0
0
0
0
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FM93CS06 Rev. A
the part. Input information (Start bit, Opcode and Address) for this
WEN instruction should be issued as listed under Table1. The
device becomes write-enabled at the end of this cycle when the
CS signal is brought low. The PRE pin should be held low during
thiscycle.ExecutionofaREADinstructionisindependentofWEN
instruction. Refer Write Enable cycle diagram.
Functional Description
A typical Microwire cycle starts by first selecting the device
(bringing the CS signal high). Once the device is selected, a valid
Start bit (“1”) should be issued to properly recognize the cycle.
Following this, the 2-bit opcode of appropriate instruction should
be issued. After the opcode bits, the 6-bit address information
should be issued. For certain instructions, some (or all) of these
6 bits are don’t care values (can be “0” or “1”), but they should still
be issued. Following the address information, depending on the
instruction (WRITE and WRALL), 16-Bit data is issued. Other-
wise, depending on the instruction (READ and PRREAD), the
device starts to drive the output data on the DO line. Other
instructions perform certain control functions and do not deal with
data bits. The Microwire cycle ends when the CS signal is brought
low. However during certain instructions, falling edge of the CS
signal initiates an internal cycle (Programming), and the device
remains busy till the completion of the internal cycle. Each of the
10 instructions is explained in detail in the following sections.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in
the memory with a specified data. This instruction is valid only
when the following are true:
I Device is write-enabled (Refer WEN instruction)
I Address of the write location is not write-protected
I PE pin is held high during this cycle
I PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRITE instruction should be issued as listed under Table1. After
inputtingthelastbitofdata(D0bit), CSsignalmustbebroughtlow
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Memory Instructions
Following five instructions, READ, WEN, WRITE, WRALL and
WDS are specific to operations intended for memory array. The
PRE pin should be held low during these instructions.
1) Read and Sequential Read (READ)
The status of the internal programming cycle can be polled at any
time by bringing the CS signal high again, after tCS interval. When
CS signal is high, the DO pin indicates the READY/BUSY status
of the chip. DO = logical 0 indicates that the programming is still
in progress. DO = logical 1 indicates that the programming is
finished and the device is ready for another instruction. It is not
required to provide the SK clock during this status polling. While
the device is busy, it is recommended that no new instruction be
issued. Refer Write cycle diagram.
READ instruction allows data to be read from a selected location
in the memory array. Input information (Start bit, Opcode and
Address) for this instruction should be issued as listed under
Table1. Upon receiving a valid input information, decoding of the
opcode and the address is made, followed by data transfer from
the selected memory location into a 16-bit serial-out shift register.
This 16-bit data is then shifted out on the DO pin. D15 bit (MSB)
is shifted out first and D0 bit (LSB) is shifted out last. A dummy-bit
(logical 0) precedes this 16-bit data output string. Output data
changes are initiated on the rising edge of the SK clock. After
reading the 16-bit data, the CS signal can be brought low to end
the Read cycle. The PRE pin should be held low during this cycle.
Refer Read cycle diagram.
It is also recommended to follow this instruction (after the device
becomes READY) with a Write Disable (WDS) instruction to
safeguarddataagainstcorruptionduetospuriousnoise,inadvert-
ent writes etc.
4) Write All (WRALL)
This device also offers “sequential memory read” operation to
allowreadingofdatafromtheadditionalmemorylocationsinstead
ofjustonelocation.Itisstartedinthesamemannerasnormalread
but the cycle is continued to read further data (instead of terminat-
ing after reading the first 16-bit data). After providing 16-bit data,
the device automatically increments the address pointer to the
next location and continues to provide the data from that location.
Any number of locations can be read out in this manner, however,
after reading out from the last location, the address pointer points
back to the first location. If the cycle is continued further, data will
be read from this first location onward. In this mode of read, the
dummy-bit is present only when the very first data is read (like
normal read cycle) and is not present on subsequent data reads.
The PRE pin should be held low during this cycle. Refer Sequen-
tial Read cycle diagram.
Write all (WRALL) instruction is similar to the Write instruction
except that WRALL instruction will simultaneously program all
memorylocationswiththedatapatternspecifiedintheinstruction.
This instruction is valid only when the following are true:
I Protect Register has been cleared (Refer PRCLEAR
instruction)
I Device is write-enabled (Refer WEN instruction)
I PE pin is held high during this cycle
I PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRALL instruction should be issued as listed under Table1. After
inputtingthelastbitofdata(D0bit), CSsignalmustbebroughtlow
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. ReferWrite All
cycle diagram.
2) Write Enable (WEN)
When VCC is applied to the part, it “powers up” in the Write Disable
(WDS) state. Therefore, all programming operations (for both
memory array and Protect Register) must be preceded by a Write
Enable (WEN) instruction. Once a Write Enable instruction is
executed, programming remains enabled until a Write Disable
(WDS) instruction is executed or VCC is completely removed from
6
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FM93CS06 Rev. A
content of the Protect Register with a pattern of all 1s. However,
in this case, WRITE operation to the last memory address
(0x001111) is still enabled. PRCLEAR instruction is enabled
(valid) only when the following are true:
5) Write Disable (WDS)
Write Disable (WDS) instruction disables all programming opera-
tions and is recommended to follow all programming operations.
Executing this instruction after a valid write instruction would
protect against accidental data disturb due to spurious noise,
glitches,inadvertentwritesetc.Inputinformation(Startbit,Opcode
and Address) for this WDS instruction should be issued as listed
under Table1. The device becomes write-disabled at the end of
this cycle when the CS signal is brought low. Execution of a READ
instructionisindependentofWDSinstruction. ReferWriteDisable
cycle diagram.
I PREN instruction was executed immediately prior to
PRCLEAR instruction
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
Inputinformation(Startbit,OpcodeandAddress)forthisPRCLEAR
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed clear cycle. It takes tWP time (Refer
appropriate DC and AC Electrical Characteristics table) for the
internal clear cycle to finish. During this time, the device remains
busyandisnotreadyforanotherinstruction. Statusoftheinternal
programmingcanbepolledasdescribedunderWRITEinstruction
description. While the device is busy, it is recommended that no
new instruction be issued. Refer Protect Register Clear cycle
diagram.
Protect Register Instructions
Following five instructions, PRREAD, PREN, PRCLEAR,
PRWRITE and PRDS are specific to operations intended for
Protect Register. The PRE pin should be held high during these
instructions.
1) Protect Register Read (PRREAD)
This instruction reads the content of the internal Protect Register.
Content of this register is 6-bit wide and is the starting address of
the “write-protected” section of the memory array. All memory
locationsgreaterthanorequaltothisaddressarewrite-protected.
Inputinformation(Startbit,OpcodeandAddress)forthisPRREAD
instruction should be issued as listed under Table1. Upon receiv-
ing a valid input information, decoding of the opcode and the
address is made, followed by data transfer (address information)
from the Protect Register. This 6-bit data is then shifted out on the
DO pin with the MSB first and the LSB last. Like the READ
instruction a dummy-bit (logical 0) precedes this 6-bit data output
string. Output data changes are initiated on the rising edge of the
SK clock. After reading the 6-bit data, the CS signal can be
brought low to end the PRREAD cycle. The PRE pin should be
held high during this cycle. Refer Protect Register Read cycle
diagram.
4) Protect Register Write (PRWRITE)
Thisinstructionisusedtowritethestartingaddressofthememory
section to be write-protected into the Protect register. After the
execution of PRWRITE instruction, all memory locations greater
than or equal to this address are write-protected. PRWRITE
instruction is enabled (valid) only the following are true:
I PRCLEAR instruction was executed first (to clear the Protect
Register)
I PREN instruction was executed immediately prior to
PRWRITE instruction
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
Inputinformation(Startbit,OpcodeandAddress)forthisPRWRITE
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer Protect
Register Write cycle diagram.
Though the content of this register is 6-bit wide, only the last 4 bits
(LSB) are valid for FM93CS06 device.
2) Protect Register Enable (PREN)
This instruction is required to enable PRCLEAR, PRWRITE and
PRDS instructions and should be executed prior to executing
PRCLEAR, PRWRITE and PRDS instructions. However, this
PREN instruction is enabled (valid) only the following are true
I Device is write-enabled (Refer WEN instruction)
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
5) Protect Register Disable (PRDS)
Input information (Start bit, Opcode and Address) for this PREN
instruction should be issued as listed under Table1. The Protect
Register becomes enabled for PRCLEAR, PRWRITE and PRDS
instructions at the end of this cycle when the CS signal is brought
low. Note that this PREN instruction must immediately precede
a PRCLEAR, PRWRITE or PRDS instruction. In other words, no
other instruction should be executed between a PREN instruction
and a PRCLEAR, PRWRITE or PRDS instruction. Refer Protect
Register Enable cycle diagram.
Unlike all other instructions, this instruction is a one-time-only
instruction which when executed permanently write-protects
the Protect Register and renders it unalterable in the future. This
instruction is useful to safeguard vital data (typically read only
data) in the memory against any possible corruption. PRDS
instruction is enabled (valid) only the following are true:
I PREN instruction was executed immediately prior to PRDS
instruction
3) Protect Register Clear (PRCLEAR)
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
This instruction clears the content of the Protect register and
therefore enables write operations (WRITE or WRALL) to all
memory locations. Executing this instruction will program the
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FM93CS06 Rev. A
Input information (Start bit, Opcode and Address) for this PRDS
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. The Protect
Register is permanently write-protected at the end of this cycle.
Refer Protect Register Disable cycle diagram.
Clearing of Ready/Busy status
When programming is in progress, the Data-Out pin will display
the programming status as either BUSY (low) or READY (high)
when CS is brought high (DO output will be tri-stated when CS is
low). To restate, during programming, the CS pin may be brought
high and low any number of times to view the programming status
without affecting the programming operation. Once programming
is completed (Output in READY state), the output is ‘cleared’
(returned to normal tri-state condition) by clocking in a Start Bit.
After the Start Bit is clocked in, the output will return to a tri-stated
condition. When clocked in, this Start Bit can be the first bit in a
command string, or CS can be brought low again to reset all
internal circuits. Refer Clearing Ready Status diagram.
Related Document
Application Note: AN758 - Using Fairchild’s MICROWIRE™ EE-
PROM.
8
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FM93CS06 Rev. A
Timing Diagrams
SYNCHRONOUS DATA TIMING
CS
SK
PRE
PE
DI
t
t
t
t
t
CSH
SKS
CSS
SKH
SKL
t
t
PREH
PRES
t
t
PEH
PES
t
t
DIH
DIS
Valid
Input
Valid
Input
t
PD
t
t
DF
DF
t
t
PD
DH
Valid
Output
Valid
Output
DO (Data Read)
t
SV
Valid Status
DO (Status Read)
NORMAL READ CYCLE (READ)
PRE
PE
tCS
CS
SK
1
1
0
A5
A4
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
0
D15
D1
D0
DO
Dummy
Bit
93CS06:
Address bits pattern -> x-x-A3-A2-A1-A0; (x -> Don't Care, can be 0 or 1); (A3-A0 -> User defined)
SEQUENTIAL READ CYCLE (PRE = 0; PE = X)
PRE
t
CS
CS
SK
1
1
0
A5
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
0
D15
D0
D15
D0
D15
D0
DO
Dummy
Bit
Data(n)
Data(n+1)
Data(n+2)
93CS06:
Address bits pattern -> x-x-A3-A2-A1-A0; (x -> Don't Care, can be 0 or 1); (A3-A0 -> User defined)
9
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FM93CS06 Rev. A
Timing Diagrams (Continued)
WRITE ENABLE CYCLE (WEN)
PRE
PE
tCS
CS
SK
DI
1
0
0
A5
A4
A1
A0
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
DO
93CS06:
Address bits pattern -> 1-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE DISABLE CYCLE (WDS)
PRE
PE
t
CS
CS
SK
DI
1
0
0
A5
A4
A1
A0
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
DO
93CS06:
Address bits pattern -> 0-0-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE CYCLE (WRITE)
PRE
PE
t
CS
CS
SK
1
0
1
A5
A4
A1
A0
D15 D14
D1
D0
DI
t
WP
Start Opcode
Bit Bits(2)
Address
Bits(6)
Data
Bits(16)
High - Z
Ready
DO
Busy
93CS06:
Address bits pattern -> x-x-A3-A2-A1-A0; (x -> Don't Care, can be 0 or 1); (A3-A0 -> User defined)
Data bits pattern -> User defined
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FM93CS06 Rev. A
Timing Diagrams (Continued)
WRITE ALL CYCLE (WRALL)
PRE
PE
tCS
CS
SK
DI
1
0
0
A5
A4
A1
A0
D15 D14
D1
D0
tWP
Start Opcode
Bit Bits(2)
Address
Bits(6)
Data
Bits(16)
High - Z
Ready
DO
Busy
93CS06:
Address bits pattern -> 0-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
Data bits pattern -> User defined
PROTECT REGISTER READ CYCLE (PRREAD)
PRE
PE
tCS
CS
SK
1
1
0
A5
A4
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
0
D5
D1
D0
DO
Dummy
Bit
93CS06:
Address bits pattern -> x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
Of the 6-bit output data(D5-D0), only D3 to D0 are valid and they correspond to A3 to A0 respectively.
PROTECT REGISTER ENABLE CYCLE (PREN)
PRE
PE
tCS
CS
SK
1
0
0
A5
A4
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
DO
93CS06:
Address bits pattern -> 1-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
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FM93CS06 Rev. A
Timing Diagrams (Continued)
PROTECT REGISTER CLEAR CYCLE (PRCLEAR)
PRE
PE
tCS
CS
SK
DI
1
1
1
A5
A4
A1
A0
tWP
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
Ready
DO
Busy
93CS06:
Address bits pattern -> 1-1-1-1-1-1
PROTECT REGISTER WRITE CYCLE (PRWRITE)
PRE
PE
t
CS
CS
SK
DI
1
0
1
A5
A4
A1
A0
t
WP
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
Ready
DO
Busy
93CS06:
Address bits pattern -> x-x-A3-A2-A1-A0; (x -> Don't Care, can be 0 or 1); (A3-A0 -> User defined)
PROTECT REGISTER DISABLE CYCLE (PRDS)
PRE
PE
tCS
CS
SK
1
0
0
A5
A4
A1
A0
DI
tWP
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
Ready
DO
Busy
93CS06:
Address bits pattern -> 0-0-0-0-0-0
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FM93CS06 Rev. A
Timing Diagrams (Continued)
CLEARING READY STATUS
PRE
PE
CS
SK
DI
Start
Bit
High - Z
High - Z
Ready
DO
Busy
Note: This Start bit can also be part of a next instruction. Hence the cycle
can be continued(instead of getting terminated, as shown) as if a new
instruction is being issued.
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FM93CS06 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
3
5
4
0.228 - 0.244
(5.791 - 6.198)
1
2
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Package, Small Outline, 0.15 Wide, 8-Lead (M8)
Package Number M08A
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FM93CS06 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
Notes: Unless otherwise specified
1. Reference JEDEC registration MO153. Variation AA. Dated 7/93
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
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FM93CS06 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
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Americas
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Hong Kong
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Japan Ltd.
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Tel. 1-888-522-5372
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Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
16
www.fairchildsemi.com
FM93CS06 Rev. A
February 2000
FM93CS46
(MICROWIRE™ Bus Interface) 1024-Bit Serial EEPROM
with Data Protect and Sequential Read
General Description
Features
FM93CS46 is a 1024-bit CMOS non-volatile EEPROM organized
as 64 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat-
ible to many of standard Microcontrollers and Microprocessors.
FM93CS46 offers programmable write protection to the memory
array using a special register called Protect Register. Selected
memory locations can be protected against write by programming
this Protect Register with the address of the first memory location
to be protected (all locations greater than or equal to this first
addressarethenprotectedfromfurtherchange). Additionally, this
address can be “permanently locked” into the device, making all
future attempts to change data impossible. In addition this device
features “sequential read”, by which, entire memory can be read
in one cycle instead of multiple single byte read cycles. There are
10 instructions implemented on the FM93CS46, 5 of which are for
memory operations and the remaining 5 are for Protect Register
operations. This device is fabricated using Fairchild Semiconduc-
torfloating-gateCMOSprocessforhighreliability,highendurance
and low power consumption.
I Wide VCC 2.7V - 5.5V
I Programmable write protection
I Sequential register read
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I No Erase instruction required before Write instruction
I Self timed write cycle
I Device status during programming cycles
I 40 year data retention
I Endurance: 1,000,000 data changes
I Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
“LZ” and “L” versions of FM93CS46 offer very low standby current
makingthemsuitableforlowpowerapplications.Thisdeviceisoffered
in both SO and TSSOP packages for small space considerations.
Functional Diagram
VCC
CS
SK
INSTRUCTION
DECODER
CONTROL LOGIC
AND CLOCK
PRE
PE
INSTRUCTION
REGISTER
DI
GENERATORS
COMPARATOR
AND
WRITE ENABLE
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
ADDRESS
REGISTER
PROTECT
REGISTER
DECODER
EEPROM ARRAY
16
READ/WRITE AMPS
16
VSS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
1
© 1999 Fairchild Semiconductor Corporation
FM93CS46 Rev. A
www.fairchildsemi.com
Connection Diagram
Dual-In-Line Package (N)
8–Pin SO (M8) and 8–Pin TSSOP (MT8)
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
CS
SK
DI
PRE
VCC
PRE
PE
PE
V
CC
GND
DO
DI
Normal
Pinout
Rotated
Pinout
CS
SK
DO
GND
Top View
Package Number
N08E, M08A and MTC08
Pin Names
CS
SK
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
GND
PE
Program Enable
Protect Register Enable
Power Supply
PRE
VCC
Ordering Information
FM 93 CS XX
T
LZ
E
XXX
Letter Description
Package
N
8-pin DIP
M8
MT8
8-pin SO
8-pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Blank
T
Normal Pin Out
Rotated Pin Out
Density
46
1024 bits
C
CMOS
CS
Data protect and sequential
read
Interface
93
MICROWIRE
Fairchild Memory Prefix
2
www.fairchildsemi.com
FM93CS46 Rev. A
Absolute Maximum Ratings (Note 1)
Operating Conditions
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93CS46
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
+6.5V to -0.3V
FM93CS46E
FM93CS46V
Lead Temperature
(Soldering, 10 sec.)
+300°C
Power Supply (VCC
)
4.5V to 5.5V
ESD rating
2000V
DC and AC Electrical Characteristics VCC = 4.5V to 5.5V unless otherwise specified
SymbolParameter
Conditions
Min
Max
Units
ICCA
ICCS
Operating Current
CS = VIH, SK=1.0 MHz
1
mA
Standby Current
CS = VIL
50
-1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
2
0.8
VCC +1
V
V
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL = 2.1 mA
IOH = -400 µA
IOL = 10 µA
IOH = -10 µA
(Note 3)
0.4
0.2
1
2.4
VOL2
VOH2
Output Low Voltage
Output High Voltage
VCC - 0.2
fSK
SK Clock Frequency
SK High Time
MHz
ns
tSKH
0°C to +70°C
-40°C to +125°C
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
tCS
Minimum CS Low Time
(Note 4)
250
ns
tCSS
tPRES
tDH
CS Setup Time
PRE Setup Time
DO Hold Time
PE Setup Time
DI Setup Time
100
50
ns
ns
ns
ns
ns
70
tPES
tDIS
50
100
tCSH
tPEH
tPREH
tDIH
CS Hold Time
PE Hold Time
PRE Hold Time
DI Hold Time
Output Delay
0
ns
ns
ns
ns
ns
250
50
20
tPD
500
500
tSV
CS to Status Valid
ns
tDF
CS to DO in Hi-Z
Write Cycle Time
CS = VIL
100
10
ns
tWP
ms
3
www.fairchildsemi.com
FM93CS46 Rev. A
Absolute Maximum Ratings (Note 1)
Operating Conditions
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93CS46L/LZ
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
+6.5V to -0.3V
FM93CS46LE/LZE
FM93CS46LV/LZV
Lead Temperature
(Soldering, 10 sec.)
+300°C
Power Supply (VCC
)
2.7V to 5.5V
ESD rating
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
SymbolParameter
Conditions
Min
Max
Units
ICCA
ICCS
Operating Current
CS = VIH, SK=1.0 MHz
1
mA
Standby Current
L
LZ (2.7V to 4.5V)
CS = VIL
10
1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8VCC
0.15VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10µA
IOH = -10µA
0.1VCC
V
0.9VCC
fSK
SK Clock Frequency
SK High Time
(Note 3)
0
1
250
KHz
µs
µs
tSKH
tSKL
tSKS
SK Low Time
1
SK Setup Time
0.2
µs
tCS
Minimum CS Low Time
(Note 4)
1
µs
tCSS
tPRES
tDH
CS Setup Time
PRE Setup Time
DO Hold Time
PE Setup Time
DI Setup Time
0.2
50
70
50
0.4
µs
ns
ns
ns
µs
tPES
tDIS
tCSH
tPEH
tPREH
tDIH
CS Hold Time
PE Hold Time
PRE Hold Time
DI Hold Time
Output Delay
0
ns
ns
ns
µs
µs
250
50
0.4
tPD
2
1
tSV
CS to Status Valid
µs
tDF
CS to DO in Hi-Z
Write Cycle Time
CS = VIL
0.4
15
µs
ms
tWP
Note 1: Stressabovethoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditionsabovethoseindicatedintheoperationalsectionsofthespecificationisnotimplied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz (Note 5)
Note 2: Typical leakage values are in the 20nA range.
SymbolTest
Typ Max Units
Note 3: TheshortestallowableSKclockperiod=1/fSK (asshownunderthefSK parameter). Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not
allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
COUT
CIN
Output Capacitance
Input Capacitance
5
pF
pF
5
Note 4: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all internal
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
0.3V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
1.0V
10µA
(Extended Voltage Levels)
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
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FM93CS46 Rev. A
Program Enable (PE)
Pin Description
This is an active high input pin to the device and is used to enable
operations, that are write in nature, to the memory array and to the
Protect register. When this pin is held high, operations that are
“write” in nature are enabled. When this pin is held low, operations
that are “write” in nature are disabled. This pin operates in
conjunctionwithPREpin. ReferTable1forfunctionalmatrixofthis
pin for various operations.
Chip Select (CS)
ThisisanactivehighinputpintoFM93CS46EEPROM(thedevice)
and is generated by a master that is controlling the device. A high
level on this pin selects the device and a low level deselects the
device. All serial communications with the device is enabled only
when this pin is held high. However this pin cannot be permanently
tied high, as a rising edge on this signal is required to reset the
internal state-machine to accept a new cycle and a falling edge to
initiateaninternalprogrammingafterawritecycle.Allactivityonthe
SK, DI and DO pins are ignored while CS is held low.
Microwire Interface
AtypicalcommunicationontheMicrowirebusismadethroughthe
CS, SK, DI and DO signals. To facilitate various operations on the
Memory array and on the Protect Register, a set of 10 instructions
are implemented on FM93CS46. The format of each instruction is
listed in Table 1.
Serial Clock (SK)
Thisisaninputpintothedeviceandisgeneratedbythemasterthat
is controlling the device. This is a clock signal that synchronizes the
communicationbetweenamasterandthedevice. Allinputinforma-
tion(DI)tothedeviceislatchedontherisingedgeofthisclockinput,
whileoutputdata(DO)fromthedeviceisdrivenfromtherisingedge
of this clock input. This pin is gated by CS signal.
Instruction
Each of the above 10 instructions is explained under individual
instruction descriptions.
Start Bit
Serial Input (DI)
This is a 1-bit field and is the first bit that is clocked into the device
whenaMicrowirecyclestarts.Thisbithastobe“1”foravalidcycle
to begin. Any number of preceding “0” can be clocked into the
device before clocking a “1”.
This is an input pin to the device and is generated by the master
that is controlling the device. The master transfers Input informa-
tion (Start bit, Opcode bits, Array addresses and Data) serially via
this pin into the device. This Input information is latched on the
rising edge of the SCK. This pin is gated by CS signal.
Opcode
Serial Output (DO)
This is a 2-bit field and should immediately follow the start bit.
These two bits (along with PRE, PE signals and 2 MSB of address
field) select a particular instruction to be executed.
This is an output pin from the device and is used to transfer Output
data via this pin to the controlling master. Output data is serially
shifted out on this pin from the rising edge of the SCK. This pin is
active only when the device is selected.
Address Field
This is a 6-bit field and should immediately follow the Opcode bits.
In FM93CS46, all 6 bits are used for address decoding during
READ, WRITE and PRWRITE instructions. During all other in-
structions (with the exception of PRREAD), the MSB 2 bits are
used to decode instruction (along with Opcode bits, PRE and PE
signals).
Protect Register Enable (PRE)
This is an active high input pin to the device and is used to
distinguish operations to memory array and operations to Protect
Register. When this pin is held low, operations to the memory
array are enabled. When this pin is held high, operations to the
Protect Register are enabled. This pin operates in conjunction
with PE pin. Refer Table1 for functional matrix of this pin for
various operations.
Data Field
This is a 16-bit field and should immediately follow the Address
bits. Only the WRITE and WRALL instructions require this field.
D15 (MSB) is clocked first and D0 (LSB) is clocked last (both
during writes as well as reads).
TABLE 1. Instruction set
Instruction
READ
Start Bit
Opcode Field
Address Field
Data Field PRE Pin
PE Pin
1
1
1
1
1
1
1
1
1
1
10
00
01
00
00
10
00
11
01
00
A5 A4 A3 A2 A1 A0
0
0
X
1
1
1
X
X
1
1
1
1
WEN
1
1
X
X
X
X
WRITE
WRALL
WDS
A5 A4 A3 A2 A1 A0
D15-D0
D15-D0
0
0
0
1
1
1
1
1
0
0
X
1
1
1
0
X
1
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
PRREAD
PREN
PRCLEAR
PRWRITE
PRDS
A5 A4 A3 A2 A1 A0
0
0
0
0
0
0
5
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FM93CS46 Rev. A
the part. Input information (Start bit, Opcode and Address) for this
WEN instruction should be issued as listed under Table1. The
device becomes write-enabled at the end of this cycle when the
CS signal is brought low. The PRE pin should be held low during
thiscycle.ExecutionofaREADinstructionisindependentofWEN
instruction. Refer Write Enable cycle diagram.
Functional Description
A typical Microwire cycle starts by first selecting the device
(bringing the CS signal high). Once the device is selected, a valid
Start bit (“1”) should be issued to properly recognize the cycle.
Following this, the 2-bit opcode of appropriate instruction should
be issued. After the opcode bits, the 6-bit address information
should be issued. For certain instructions, some (or all) of these
6 bits are don’t care values (can be “0” or “1”), but they should still
be issued. Following the address information, depending on the
instruction (WRITE and WRALL), 16-Bit data is issued. Other-
wise, depending on the instruction (READ and PRREAD), the
device starts to drive the output data on the DO line. Other
instructions perform certain control functions and do not deal with
data bits. The Microwire cycle ends when the CS signal is brought
low. However during certain instructions, falling edge of the CS
signal initiates an internal cycle (Programming), and the device
remains busy till the completion of the internal cycle. Each of the
10 instructions is explained in detail in the following sections.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in
the memory with a specified data. This instruction is valid only
when the following are true:
I Device is write-enabled (Refer WEN instruction)
I Address of the write location is not write-protected
I PE pin is held high during this cycle
I PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRITE instruction should be issued as listed under Table1. After
inputtingthelastbitofdata(D0bit), CSsignalmustbebroughtlow
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Memory Instructions
Following five instructions, READ, WEN, WRITE, WRALL and
WDS are specific to operations intended for memory array. The
PRE pin should be held low during these instructions.
1) Read and Sequential Read (READ)
The status of the internal programming cycle can be polled at any
time by bringing the CS signal high again, after tCS interval. When
CS signal is high, the DO pin indicates the READY/BUSY status
of the chip. DO = logical 0 indicates that the programming is still
in progress. DO = logical 1 indicates that the programming is
finished and the device is ready for another instruction. It is not
required to provide the SK clock during this status polling. While
the device is busy, it is recommended that no new instruction be
issued. Refer Write cycle diagram.
READ instruction allows data to be read from a selected location
in the memory array. Input information (Start bit, Opcode and
Address) for this instruction should be issued as listed under
Table1. Upon receiving a valid input information, decoding of the
opcode and the address is made, followed by data transfer from
the selected memory location into a 16-bit serial-out shift register.
This 16-bit data is then shifted out on the DO pin. D15 bit (MSB)
is shifted out first and D0 bit (LSB) is shifted out last. A dummy-bit
(logical 0) precedes this 16-bit data output string. Output data
changes are initiated on the rising edge of the SK clock. After
reading the 16-bit data, the CS signal can be brought low to end
the Read cycle. The PRE pin should be held low during this cycle.
Refer Read cycle diagram.
It is also recommended to follow this instruction (after the device
becomes READY) with a Write Disable (WDS) instruction to
safeguarddataagainstcorruptionduetospuriousnoise,inadvert-
ent writes etc.
4) Write All (WRALL)
This device also offers “sequential memory read” operation to
allowreadingofdatafromtheadditionalmemorylocationsinstead
ofjustonelocation.Itisstartedinthesamemannerasnormalread
but the cycle is continued to read further data (instead of terminat-
ing after reading the first 16-bit data). After providing 16-bit data,
the device automatically increments the address pointer to the
next location and continues to provide the data from that location.
Any number of locations can be read out in this manner, however,
after reading out from the last location, the address pointer points
back to the first location. If the cycle is continued further, data will
be read from this first location onward. In this mode of read, the
dummy-bit is present only when the very first data is read (like
normal read cycle) and is not present on subsequent data reads.
The PRE pin should be held low during this cycle. Refer Sequen-
tial Read cycle diagram.
Write all (WRALL) instruction is similar to the Write instruction
except that WRALL instruction will simultaneously program all
memorylocationswiththedatapatternspecifiedintheinstruction.
This instruction is valid only when the following are true:
I Protect Register has been cleared (Refer PRCLEAR
instruction)
I Device is write-enabled (Refer WEN instruction)
I PE pin is held high during this cycle
I PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRALL instruction should be issued as listed under Table1. After
inputtingthelastbitofdata(D0bit), CSsignalmustbebroughtlow
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. ReferWrite All
cycle diagram.
2) Write Enable (WEN)
When VCC is applied to the part, it “powers up” in the Write Disable
(WDS) state. Therefore, all programming operations (for both
memory array and Protect Register) must be preceded by a Write
Enable (WEN) instruction. Once a Write Enable instruction is
executed, programming remains enabled until a Write Disable
(WDS) instruction is executed or VCC is completely removed from
6
www.fairchildsemi.com
FM93CS46 Rev. A
in this case, WRITE operation to the last memory address
(0x111111) is still enabled. PRCLEAR instruction is enabled
(valid) only when the following are true:
5) Write Disable (WDS)
Write Disable (WDS) instruction disables all programming opera-
tions and is recommended to follow all programming operations.
Executing this instruction after a valid write instruction would
protect against accidental data disturb due to spurious noise,
glitches,inadvertentwritesetc.Inputinformation(Startbit,Opcode
and Address) for this WDS instruction should be issued as listed
under Table1. The device becomes write-disabled at the end of
this cycle when the CS signal is brought low. Execution of a READ
instructionisindependentofWDSinstruction. ReferWriteDisable
cycle diagram.
I PREN instruction was executed immediately prior to
PRCLEAR instruction
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
Inputinformation(Startbit,OpcodeandAddress)forthisPRCLEAR
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed clear cycle. It takes tWP time (Refer
appropriate DC and AC Electrical Characteristics table) for the
internal clear cycle to finish. During this time, the device remains
busyandisnotreadyforanotherinstruction. Statusoftheinternal
programmingcanbepolledasdescribedunderWRITEinstruction
description. While the device is busy, it is recommended that no
new instruction be issued. Refer Protect Register Clear cycle
diagram.
Protect Register Instructions
Following five instructions, PRREAD, PREN, PRCLEAR,
PRWRITE and PRDS are specific to operations intended for
Protect Register. The PRE pin should be held high during these
instructions.
1) Protect Register Read (PRREAD)
This instruction reads the content of the internal Protect Register.
Content of this register is 6-bit wide and is the starting address of
the “write-protected” section of the memory array. All memory
locationsgreaterthanorequaltothisaddressarewrite-protected.
Inputinformation(Startbit,OpcodeandAddress)forthisPRREAD
instruction should be issued as listed under Table1. Upon receiv-
ing a valid input information, decoding of the opcode and the
address is made, followed by data transfer (address information)
from the Protect Register. This 6-bit data is then shifted out on the
DO pin with the MSB first and the LSB last. Like the READ
instruction a dummy-bit (logical 0) precedes this 6-bit data output
string. Output data changes are initiated on the rising edge of the
SK clock. After reading the 6-bit data, the CS signal can be
brought low to end the PRREAD cycle. The PRE pin should be
held high during this cycle. Refer Protect Register Read cycle
diagram.
4) Protect Register Write (PRWRITE)
Thisinstructionisusedtowritethestartingaddressofthememory
section to be write-protected into the Protect register. After the
execution of PRWRITE instruction, all memory locations greater
than or equal to this address are write-protected. PRWRITE
instruction is enabled (valid) only the following are true:
I PRCLEAR instruction was executed first (to clear the Protect
Register)
I PREN instruction was executed immediately prior to
PRWRITE instruction
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
Inputinformation(Startbit,OpcodeandAddress)forthisPRWRITE
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer Protect
Register Write cycle diagram.
2) Protect Register Enable (PREN)
This instruction is required to enable PRCLEAR, PRWRITE and
PRDS instructions and should be executed prior to executing
PRCLEAR, PRWRITE and PRDS instructions. However, this
PREN instruction is enabled (valid) only the following are true
I Device is write-enabled (Refer WEN instruction)
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
Input information (Start bit, Opcode and Address) for this PREN
instruction should be issued as listed under Table1. The Protect
Register becomes enabled for PRCLEAR, PRWRITE and PRDS
instructions at the end of this cycle when the CS signal is brought
low. Note that this PREN instruction must immediately precede
a PRCLEAR, PRWRITE or PRDS instruction. In other words, no
other instruction should be executed between a PREN instruction
and a PRCLEAR, PRWRITE or PRDS instruction. Refer Protect
Register Enable cycle diagram.
5) Protect Register Disable (PRDS)
Unlike all other instructions, this instruction is a one-time-only
instruction which when executed permanently write-protects
the Protect Register and renders it unalterable in the future. This
instruction is useful to safeguard vital data (typically read only
data) in the memory against any possible corruption. PRDS
instruction is enabled (valid) only the following are true:
I PREN instruction was executed immediately prior to PRDS
instruction
3) Protect Register Clear (PRCLEAR)
This instruction clears the content of the Protect register and
therefore enables write operations (WRITE or WRALL) to all
memory locations. Executing this instruction will program the
content of the Protect Register with a pattern of all 1s. However,
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
7
www.fairchildsemi.com
FM93CS46 Rev. A
Input information (Start bit, Opcode and Address) for this PRDS
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. The Protect
Register is permanently write-protected at the end of this cycle.
Refer Protect Register Disable cycle diagram.
Clearing of Ready/Busy status
When programming is in progress, the Data-Out pin will display
the programming status as either BUSY (low) or READY (high)
when CS is brought high (DO output will be tri-stated when CS is
low). To restate, during programming, the CS pin may be brought
high and low any number of times to view the programming status
without affecting the programming operation. Once programming
is completed (Output in READY state), the output is ‘cleared’
(returned to normal tri-state condition) by clocking in a Start Bit.
After the Start Bit is clocked in, the output will return to a tri-stated
condition. When clocked in, this Start Bit can be the first bit in a
command string, or CS can be brought low again to reset all
internal circuits. Refer Clearing Ready Status diagram.
Related Document
Application Note: AN758 - Using Fairchild’s MICROWIRE™ EE-
PROM.
8
www.fairchildsemi.com
FM93CS46 Rev. A
Timing Diagrams
SYNCHRONOUS DATA TIMING
CS
SK
PRE
PE
DI
t
t
t
t
t
CSH
SKS
CSS
SKH
SKL
t
t
PREH
PRES
t
t
PEH
PES
t
t
DIH
DIS
Valid
Input
Valid
Input
t
PD
t
t
DF
DF
t
t
PD
DH
Valid
Output
Valid
Output
DO (Data Read)
t
SV
Valid Status
DO (Status Read)
NORMAL READ CYCLE (READ)
PRE
PE
t
CS
CS
SK
1
1
0
A5
A4
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
0
D15
D1
D0
DO
Dummy
Bit
93CS46:
Address bits pattern -> User defined
SEQUENTIAL READ CYCLE (PRE = 0; PE = X)
PRE
t
CS
CS
SK
1
1
0
A5
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
0
D15
D0
D15
D0
D15
D0
DO
Dummy
Bit
Data(n)
Data(n+1)
Data(n+2)
93CS46:
Address bits pattern -> User defined
9
www.fairchildsemi.com
FM93CS46 Rev. A
Timing Diagrams (Continued)
WRITE ENABLE CYCLE (WEN)
PRE
PE
tCS
CS
SK
DI
1
0
0
A5
A4
A1
A0
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
DO
93CS46:
Address bits pattern -> 1-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE DISABLE CYCLE (WDS)
PRE
PE
t
CS
CS
SK
DI
1
0
0
A5
A4
A1
A0
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
DO
93CS46:
Address bits pattern -> 0-0-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE CYCLE (WRITE)
PRE
PE
tCS
CS
SK
1
0
1
A5
A4
A1
A0
D15 D14
D1
D0
DI
tWP
Start Opcode
Bit Bits(2)
Address
Bits(6)
Data
Bits(16)
High - Z
Ready
DO
Busy
93CS46:
Address bits pattern -> User defined
Data bits pattern -> User defined
10
www.fairchildsemi.com
FM93CS46 Rev. A
Timing Diagrams (Continued)
WRITE ALL CYCLE (WRALL)
PRE
PE
tCS
CS
SK
DI
1
0
0
A5
A4
A1
A0
D15 D14
D1
D0
tWP
Start Opcode
Bit Bits(2)
Address
Bits(6)
Data
Bits(16)
High - Z
Ready
DO
Busy
93CS46:
Address bits pattern -> 0-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
Data bits pattern -> User defined
PROTECT REGISTER READ CYCLE (PRREAD)
PRE
PE
t
CS
CS
SK
1
1
0
A5
A4
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
0
D5
D1
D0
DO
Dummy
Bit
93CS46:
Address bits pattern -> x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
PROTECT REGISTER ENABLE CYCLE (PREN)
PRE
PE
tCS
CS
SK
1
0
0
A5
A4
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
DO
93CS46:
Address bits pattern -> 1-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
11
www.fairchildsemi.com
FM93CS46 Rev. A
Timing Diagrams (Continued)
PROTECT REGISTER CLEAR CYCLE (PRCLEAR)
PRE
PE
tCS
CS
SK
DI
1
1
1
A5
A4
A1
A0
tWP
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
Ready
Ready
Ready
DO
Busy
93CS46:
Address bits pattern -> 1-1-1-1-1-1
PROTECT REGISTER WRITE CYCLE (PRWRITE)
PRE
PE
tCS
CS
SK
1
0
1
A5
A4
A1
A0
DI
tWP
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
DO
Busy
93CS46:
Address bits pattern -> User defined
PROTECT REGISTER DISABLE CYCLE (PRDS)
PRE
PE
tCS
CS
SK
1
0
0
A5
A4
A1
A0
DI
tWP
Start Opcode
Bit Bits(2)
Address
Bits(6)
High - Z
DO
Busy
93CS46:
Address bits pattern -> 0-0-0-0-0-0
12
www.fairchildsemi.com
FM93CS46 Rev. A
Timing Diagrams (Continued)
CLEARING READY STATUS
PRE
PE
CS
SK
DI
Start
Bit
High - Z
High - Z
Ready
DO
Busy
Note: This Start bit can also be part of a next instruction. Hence the cycle
can be continued(instead of getting terminated, as shown) as if a new
instruction is being issued.
13
www.fairchildsemi.com
FM93CS46 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Package, Small Outline, 0.15 Wide, 8-Lead (M8)
Package Number M08A
14
www.fairchildsemi.com
FM93CS46 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
Notes: Unless otherwise specified
1. Reference JEDEC registration MO153. Variation AA. Dated 7/93
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
15
www.fairchildsemi.com
FM93CS46 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
Deutsch
English
Français
Italiano
+49 (0) 8141-6102-0
+44 (0) 1793-856856
+33 (0) 1-6930-3696
+39 (0) 2-249111-1
2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
16
www.fairchildsemi.com
FM93CS46 Rev. A
February 2000
FM93CS56
(MICROWIRE™ Bus Interface) 2048-Bit Serial EEPROM
with Data Protect and Sequential Read
General Description
Features
FM93CS56 is a 2048-bit CMOS non-volatile EEPROM organized
as 128 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat-
ible to many of standard Microcontrollers and Microprocessors.
FM93CS56 offers programmable write protection to the memory
array using a special register called Protect Register. Selected
memory locations can be protected against write by programming
this Protect Register with the address of the first memory location
to be protected (all locations greater than or equal to this first
addressarethenprotectedfromfurtherchange). Additionally, this
address can be “permanently locked” into the device, making all
future attempts to change data impossible. In addition this device
features “sequential read”, by which, entire memory can be read
in one cycle instead of multiple single byte read cycles. There are
10 instructions implemented on the FM93CS56, 5 of which are for
memory operations and the remaining 5 are for Protect Register
operations. This device is fabricated using Fairchild Semiconduc-
torfloating-gateCMOSprocessforhighreliability,highendurance
and low power consumption.
I Wide VCC 2.7V - 5.5V
I Programmable write protection
I Sequential register read
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I No Erase instruction required before Write instruction
I Self timed write cycle
I Device status during programming cycles
I 40 year data retention
I Endurance: 1,000,000 data changes
I Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
“LZ” and “L” versions of FM93CS56 offer very low standby current
makingthemsuitableforlowpowerapplications.Thisdeviceisoffered
in both SO and TSSOP packages for small space considerations.
Functional Diagram
VCC
CS
SK
INSTRUCTION
DECODER
CONTROL LOGIC
AND CLOCK
PRE
PE
INSTRUCTION
REGISTER
DI
GENERATORS
COMPARATOR
AND
WRITE ENABLE
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
ADDRESS
REGISTER
PROTECT
REGISTER
DECODER
EEPROM ARRAY
16
READ/WRITE AMPS
16
VSS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
1
© 1999 Fairchild Semiconductor Corporation
FM93CS56 Rev. A
www.fairchildsemi.com
Connection Diagram
Dual-In-Line Package (N)
8–Pin SO (M8) and 8–Pin TSSOP (MT8)
1
2
3
4
8
7
6
5
CS
SK
DI
VCC
PRE
PE
DO
GND
Top View
Package Number
N08E, M08A and MTC08
Pin Names
CS
SK
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
GND
PE
Program Enable
Protect Register Enable
Power Supply
PRE
VCC
Ordering Information
FM
93
CS XX LZ
E
XXX
Letter Description
Package
N
8-pin DIP
M8
MT8
8-pin SO
8-pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Density
56
2048 bits
C
CMOS
CS
Data protect and sequential
read
Interface
93
MICROWIRE
Fairchild Memory Prefix
2
www.fairchildsemi.com
FM93CS56 Rev. A
Absolute Maximum Ratings (Note 1)
Operating Conditions
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93CS56
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
+6.5V to -0.3V
FM93CS56E
FM93CS56V
Lead Temperature
(Soldering, 10 sec.)
+300°C
Power Supply (VCC
)
4.5V to 5.5V
ESD rating
2000V
DC and AC Electrical Characteristics VCC = 4.5V to 5.5V unless otherwise specified
Symbol
ICCA
Parameter
Conditions
CS = VIH, SK=1.0 MHz
CS = VIL
Min
Max
Units
Operating Current
1
mA
ICCS
Standby Current
50
-1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
2
0.8
VCC +1
V
V
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL = 2.1 mA
IOH = -400 µA
IOL = 10 µA
IOH = -10 µA
(Note 3)
0.4
0.2
1
2.4
VOL2
VOH2
Output Low Voltage
Output High Voltage
VCC - 0.2
fSK
SK Clock Frequency
SK High Time
MHz
ns
tSKH
0°C to +70°C
-40°C to +125°C
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
tCS
Minimum CS Low Time
(Note 4)
250
ns
tCSS
tPRES
tDH
CS Setup Time
PRE Setup Time
DO Hold Time
PE Setup Time
DI Setup Time
100
50
ns
ns
ns
ns
ns
70
tPES
tDIS
50
100
tCSH
tPEH
tPREH
tDIH
CS Hold Time
PE Hold Time
PRE Hold Time
DI Hold Time
Output Delay
0
ns
ns
ns
ns
ns
250
50
20
tPD
500
500
tSV
CS to Status Valid
ns
tDF
CS to DO in Hi-Z
Write Cycle Time
CS = VIL
100
10
ns
tWP
ms
3
www.fairchildsemi.com
FM93CS56 Rev. A
Absolute Maximum Ratings (Note 1)
Operating Conditions
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93CS56L/LZ
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
+6.5V to -0.3V
FM93CS56LE/LZE
FM93CS56LV/LZV
Lead Temperature
(Soldering, 10 sec.)
+300°C
Power Supply (VCC
)
2.7V to 5.5V
ESD rating
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol
ICCA
Parameter
Conditions
CS = VIH, SK=1.0 MHz
CS = VIL
Min
Max
Units
Operating Current
1
mA
ICCS
Standby Current
L
LZ (2.7V to 4.5V)
10
1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8VCC
0.15VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10µA
IOH = -10µA
0.1VCC
V
0.9VCC
fSK
SK Clock Frequency
SK High Time
(Note 3)
0
1
250
KHz
µs
µs
tSKH
tSKL
tSKS
SK Low Time
1
SK Setup Time
0.2
µs
tCS
Minimum CS Low Time
(Note 4)
1
µs
tCSS
tPRES
tDH
CS Setup Time
PRE Setup Time
DO Hold Time
PE Setup Time
DI Setup Time
0.2
50
70
50
0.4
µs
ns
ns
ns
µs
tPES
tDIS
tCSH
tPEH
tPREH
tDIH
CS Hold Time
PE Hold Time
PRE Hold Time
DI Hold Time
Output Delay
0
ns
ns
ns
µs
µs
250
50
0.4
tPD
2
1
tSV
CS to Status Valid
µs
tDF
CS to DO in Hi-Z
Write Cycle Time
CS = VIL
0.4
15
µs
ms
tWP
Note 1: Stressabovethoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditionsabovethoseindicatedintheoperationalsectionsofthespecificationisnotimplied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz (Note 5)
Note 2: Typical leakage values are in the 20nA range.
Symbol
Test
Typ Max Units
Note 3: TheshortestallowableSKclockperiod=1/fSK (asshownunderthefSK parameter). Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not
allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
COUT
CIN
Output Capacitance
Input Capacitance
5
5
pF
pF
Note 4: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all internal
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
0.3V/1.8V
VIL/VIH
Timing Level
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
2.7V ≤ VCC ≤ 5.5V
1.0V
10µA
(Extended Voltage Levels)
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
www.fairchildsemi.com
FM93CS56 Rev. A
Program Enable (PE)
Pin Description
This is an active high input pin to the device and is used to enable
operations, that are write in nature, to the memory array and to the
Protect register. When this pin is held high, operations that are
“write” in nature are enabled. When this pin is held low, operations
that are “write” in nature are disabled. This pin operates in
conjunctionwithPREpin. ReferTable1forfunctionalmatrixofthis
pin for various operations.
Chip Select (CS)
ThisisanactivehighinputpintoFM93CS56EEPROM(thedevice)
and is generated by a master that is controlling the device. A high
level on this pin selects the device and a low level deselects the
device. All serial communications with the device is enabled only
when this pin is held high. However this pin cannot be permanently
tied high, as a rising edge on this signal is required to reset the
internal state-machine to accept a new cycle and a falling edge to
initiateaninternalprogrammingafterawritecycle.Allactivityonthe
SK, DI and DO pins are ignored while CS is held low.
Microwire Interface
AtypicalcommunicationontheMicrowirebusismadethroughthe
CS, SK, DI and DO signals. To facilitate various operations on the
Memory array and on the Protect Register, a set of 10 instructions
are implemented on FM93CS56. The format of each instruction is
listed in Table 1.
Serial Clock (SK)
Thisisaninputpintothedeviceandisgeneratedbythemasterthat
is controlling the device. This is a clock signal that synchronizes the
communicationbetweenamasterandthedevice. Allinputinforma-
tion(DI)tothedeviceislatchedontherisingedgeofthisclockinput,
whileoutputdata(DO)fromthedeviceisdrivenfromtherisingedge
of this clock input. This pin is gated by CS signal.
Instruction
Each of the above 10 instructions is explained under individual
instruction descriptions.
Start Bit
Serial Input (DI)
This is a 1-bit field and is the first bit that is clocked into the device
whenaMicrowirecyclestarts.Thisbithastobe“1”foravalidcycle
to begin. Any number of preceding “0” can be clocked into the
device before clocking a “1”.
This is an input pin to the device and is generated by the master
that is controlling the device. The master transfers Input informa-
tion (Start bit, Opcode bits, Array addresses and Data) serially via
this pin into the device. This Input information is latched on the
rising edge of the SCK. This pin is gated by CS signal.
Opcode
Serial Output (DO)
This is a 2-bit field and should immediately follow the start bit.
These two bits (along with PRE, PE signals and 2 MSB of address
field) select a particular instruction to be executed.
This is an output pin from the device and is used to transfer Output
data via this pin to the controlling master. Output data is serially
shifted out on this pin from the rising edge of the SCK. This pin is
active only when the device is selected.
Address Field
This is a 8-bit field and should immediately follow the Opcode bits.
In FM93CS56, only the LSB 7 bits are used for address decoding
during READ, WRITE and PRWRITE instructions. During these
three instructions (READ, WRITE and PRWRITE), the MSB is
“don’t care” (can be 0 or 1). During all other instructions (with the
exception of PRREAD), the MSB 2 bits are used to decode
instruction (along with Opcode bits, PRE and PE signals).
Protect Register Enable (PRE)
This is an active high input pin to the device and is used to
distinguish operations to memory array and operations to Protect
Register. When this pin is held low, operations to the memory
array are enabled. When this pin is held high, operations to the
Protect Register are enabled. This pin operates in conjunction
with PE pin. Refer Table1 for functional matrix of this pin for
various operations.
Data Field
This is a 16-bit field and should immediately follow the Address
bits. Only the WRITE and WRALL instructions require this field.
D15 (MSB) is clocked first and D0 (LSB) is clocked last (both
during writes as well as reads).
TABLE 1. Instruction set
Instruction Start Bit Opcode Field
Address Field
Data Field PRE Pin
PE Pin
READ
WEN
1
1
1
1
1
1
1
1
1
1
10
00
01
00
00
10
00
11
01
00
X
1
X
0
0
X
1
1
X
0
A6 A5 A4 A3 A2 A1 A0
0
0
X
1
1
1
X
X
1
1
1
1
1
X
X
X
X
X
X
WRITE
WRALL
WDS
A6 A5 A4 A3 A2 A1 A0
D15-D0
D15-D0
0
0
0
1
1
1
1
1
1
0
X
1
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
PRREAD
PREN
PRCLEAR
PRWRITE
PRDS
A6 A5 A4 A3 A2 A1 A0
0
0
0
0
0
0
0
5
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FM93CS56 Rev. A
the part. Input information (Start bit, Opcode and Address) for this
WEN instruction should be issued as listed under Table1. The
device becomes write-enabled at the end of this cycle when the
CS signal is brought low. The PRE pin should be held low during
thiscycle.ExecutionofaREADinstructionisindependentofWEN
instruction. Refer Write Enable cycle diagram.
Functional Description
A typical Microwire cycle starts by first selecting the device
(bringing the CS signal high). Once the device is selected, a valid
Start bit (“1”) should be issued to properly recognize the cycle.
Following this, the 2-bit opcode of appropriate instruction should
be issued. After the opcode bits, the 8-bit address information
should be issued. For certain instructions, some (or all) of these
8 bits are don’t care values (can be “0” or “1”), but they should still
be issued. Following the address information, depending on the
instruction (WRITE and WRALL), 16-Bit data is issued. Other-
wise, depending on the instruction (READ and PRREAD), the
device starts to drive the output data on the DO line. Other
instructions perform certain control functions and do not deal with
data bits. The Microwire cycle ends when the CS signal is brought
low. However during certain instructions, falling edge of the CS
signal initiates an internal cycle (Programming), and the device
remains busy till the completion of the internal cycle. Each of the
10 instructions is explained in detail in the following sections.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in
the memory with a specified data. This instruction is valid only
when the following are true:
I Device is write-enabled (Refer WEN instruction)
I Address of the write location is not write-protected
I PE pin is held high during this cycle
I PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRITE instruction should be issued as listed under Table1. After
inputtingthelastbitofdata(D0bit), CSsignalmustbebroughtlow
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Memory Instructions
Following five instructions, READ, WEN, WRITE, WRALL and
WDS are specific to operations intended for memory array. The
PRE pin should be held low during these instructions.
1) Read and Sequential Read (READ)
The status of the internal programming cycle can be polled at any
time by bringing the CS signal high again, after tCS interval. When
CS signal is high, the DO pin indicates the READY/BUSY status
of the chip. DO = logical 0 indicates that the programming is still
in progress. DO = logical 1 indicates that the programming is
finished and the device is ready for another instruction. It is not
required to provide the SK clock during this status polling. While
the device is busy, it is recommended that no new instruction be
issued. Refer Write cycle diagram.
READ instruction allows data to be read from a selected location
in the memory array. Input information (Start bit, Opcode and
Address) for this instruction should be issued as listed under
Table1. Upon receiving a valid input information, decoding of the
opcode and the address is made, followed by data transfer from
the selected memory location into a 16-bit serial-out shift register.
This 16-bit data is then shifted out on the DO pin. D15 bit (MSB)
is shifted out first and D0 bit (LSB) is shifted out last. A dummy-bit
(logical 0) precedes this 16-bit data output string. Output data
changes are initiated on the rising edge of the SK clock. After
reading the 16-bit data, the CS signal can be brought low to end
the Read cycle. The PRE pin should be held low during this cycle.
Refer Read cycle diagram.
It is also recommended to follow this instruction (after the device
becomes READY) with a Write Disable (WDS) instruction to
safeguarddataagainstcorruptionduetospuriousnoise,inadvert-
ent writes etc.
4) Write All (WRALL)
This device also offers “sequential memory read” operation to
allowreadingofdatafromtheadditionalmemorylocationsinstead
ofjustonelocation.Itisstartedinthesamemannerasnormalread
but the cycle is continued to read further data (instead of terminat-
ing after reading the first 16-bit data). After providing 16-bit data,
the device automatically increments the address pointer to the
next location and continues to provide the data from that location.
Any number of locations can be read out in this manner, however,
after reading out from the last location, the address pointer points
back to the first location. If the cycle is continued further, data will
be read from this first location onward. In this mode of read, the
dummy-bit is present only when the very first data is read (like
normal read cycle) and is not present on subsequent data reads.
The PRE pin should be held low during this cycle. Refer Sequen-
tial Read cycle diagram.
Write all (WRALL) instruction is similar to the Write instruction
except that WRALL instruction will simultaneously program all
memorylocationswiththedatapatternspecifiedintheinstruction.
This instruction is valid only when the following are true:
I Protect Register has been cleared (Refer PRCLEAR
instruction)
I Device is write-enabled (Refer WEN instruction)
I PE pin is held high during this cycle
I PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRALL instruction should be issued as listed under Table1. After
inputtingthelastbitofdata(D0bit), CSsignalmustbebroughtlow
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. ReferWrite All
cycle diagram.
2) Write Enable (WEN)
When VCC is applied to the part, it “powers up” in the Write Disable
(WDS) state. Therefore, all programming operations (for both
memory array and Protect Register) must be preceded by a Write
Enable (WEN) instruction. Once a Write Enable instruction is
executed, programming remains enabled until a Write Disable
(WDS) instruction is executed or VCC is completely removed from
6
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FM93CS56 Rev. A
in this case, WRITE operation to the last memory address
(0x01111111) is still enabled. PRCLEAR instruction is enabled
(valid) only when the following are true:
5) Write Disable (WDS)
Write Disable (WDS) instruction disables all programming opera-
tions and is recommended to follow all programming operations.
Executing this instruction after a valid write instruction would
protect against accidental data disturb due to spurious noise,
glitches,inadvertentwritesetc.Inputinformation(Startbit,Opcode
and Address) for this WDS instruction should be issued as listed
under Table1. The device becomes write-disabled at the end of
this cycle when the CS signal is brought low. Execution of a READ
instructionisindependentofWDSinstruction. ReferWriteDisable
cycle diagram.
I PREN instruction was executed immediately prior to
PRCLEAR instruction
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
Inputinformation(Startbit,OpcodeandAddress)forthisPRCLEAR
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed clear cycle. It takes tWP time (Refer
appropriate DC and AC Electrical Characteristics table) for the
internal clear cycle to finish. During this time, the device remains
busy and is not ready for another instruction. Status of the internal
programmingcanbepolledasdescribedunderWRITEinstruction
description. While the device is busy, it is recommended that no
new instruction be issued. Refer Protect Register Clear cycle
diagram.
Protect Register Instructions
Following five instructions, PRREAD, PREN, PRCLEAR,
PRWRITE and PRDS are specific to operations intended for
Protect Register. The PRE pin should be held high during these
instructions.
1) Protect Register Read (PRREAD)
This instruction reads the content of the internal Protect Register.
Content of this register is 8-bit wide and is the starting address of
the “write-protected” section of the memory array. All memory
locationsgreaterthanorequaltothisaddressarewrite-protected.
Inputinformation(Startbit,OpcodeandAddress)forthisPRREAD
instruction should be issued as listed under Table 1. Upon
receivingavalidinputinformation,decodingoftheopcodeandthe
address is made, followed by data transfer (address information)
from the Protect Register. This 8-bit data is then shifted out on the
DO pin with the MSB first and the LSB last. Like the READ
instruction a dummy-bit (logical 0) precedes this 8-bit data output
string. Output data changes are initiated on the rising edge of the
SKclock.Afterreadingthe8-bitdata,theCSsignalcanbebrought
low to end the PRREAD cycle. The PRE pin should be held high
during this cycle. Refer Protect Register Read cycle diagram.
4) Protect Register Write (PRWRITE)
Thisinstructionisusedtowritethestartingaddressofthememory
section to be write-protected into the Protect register. After the
execution of PRWRITE instruction, all memory locations greater
than or equal to this address are write-protected. PRWRITE
instruction is enabled (valid) only the following are true:
I PRCLEAR instruction was executed first (to clear the Protect
Register)
I PREN instruction was executed immediately prior to
PRWRITE instruction
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
Inputinformation(Startbit,OpcodeandAddress)forthisPRWRITE
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer Protect
Register Write cycle diagram.
Though the content of this register is 8-bit wide, only the last 7 bits
(LSB) are valid for FM93CS56 device.
2) Protect Register Enable (PREN)
This instruction is required to enable PRCLEAR, PRWRITE and
PRDS instructions and should be executed prior to executing
PRCLEAR, PRWRITE and PRDS instructions. However, this
PREN instruction is enabled (valid) only the following are true
I Device is write-enabled (Refer WEN instruction)
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
5) Protect Register Disable (PRDS)
Input information (Start bit, Opcode and Address) for this PREN
instruction should be issued as listed under Table1. The Protect
Register becomes enabled for PRCLEAR, PRWRITE and PRDS
instructions at the end of this cycle when the CS signal is brought
low. Note that this PREN instruction must immediately precede
a PRCLEAR, PRWRITE or PRDS instruction. In other words, no
other instruction should be executed between a PREN instruction
and a PRCLEAR, PRWRITE or PRDS instruction. Refer Protect
Register Enable cycle diagram.
Unlike all other instructions, this instruction is a one-time-only
instruction which when executed permanently write-protects
the Protect Register and renders it unalterable in the future. This
instruction is useful to safeguard vital data (typically read only
data) in the memory against any possible corruption. PRDS
instruction is enabled (valid) only the following are true:
I PREN instruction was executed immediately prior to PRDS
instruction
3) Protect Register Clear (PRCLEAR)
I PE pin is held high during this cycle
This instruction clears the content of the Protect register and
therefore enables write operations (WRITE or WRALL) to all
memory locations. Executing this instruction will program the
content of the Protect Register with a pattern of all 1s. However,
I PRE pin is held high during this cycle
Input information (Start bit, Opcode and Address) for this PRDS
7
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FM93CS56 Rev. A
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. The Protect
Register is permanently write-protected at the end of this cycle.
Refer Protect Register Disable cycle diagram.
When programming is in progress, the Data-Out pin will display
the programming status as either BUSY (low) or READY (high)
when CS is brought high (DO output will be tri-stated when CS is
low). To restate, during programming, the CS pin may be brought
high and low any number of times to view the programming status
without affecting the programming operation. Once programming
is completed (Output in READY state), the output is ‘cleared’
(returned to normal tri-state condition) by clocking in a Start Bit.
After the Start Bit is clocked in, the output will return to a tri-stated
condition. When clocked in, this Start Bit can be the first bit in a
command string, or CS can be brought low again to reset all
internal circuits. Refer Clearing Ready Status diagram.
Clearing of Ready/Busy status
Related Document
Application Note: AN758 - Using Fairchild’s MICROWIRE™ EE-
PROM.
8
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FM93CS56 Rev. A
Timing Diagrams
SYNCHRONOUS DATA TIMING
CS
SK
PRE
PE
DI
t
t
t
t
t
CSH
SKS
CSS
SKH
SKL
t
t
PREH
PRES
t
t
PEH
PES
t
t
DIH
DIS
Valid
Input
Valid
Input
t
PD
t
t
DF
DF
t
t
PD
DH
Valid
Output
Valid
Output
DO (Data Read)
t
SV
Valid Status
DO (Status Read)
NORMAL READ CYCLE (READ)
PRE
PE
tCS
CS
SK
1
1
0
A7
A6
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
0
D15
D1
D0
0
DO
Dummy
Bit
93CS56:
Address bits pattern -> x-A6-A5-A4-A3-A2-A1-A0; (x -> Don't Care, can be
or 1); ( A6-A0 -> User defined )
SEQUENTIAL READ CYCLE (PRE = 0; PE = X)
PRE
t
CS
CS
SK
1
1
0
A7
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
0
D15
D0
D15
D0
D15
D0
DO
Dummy
Bit
Data(n)
Data(n+1)
Data(n+2)
93CS56:
Address bits pattern ->x-A6-A5-A4-A3-A2-A1-A0; (x -> Don't Care, can be 0 or 1); ( A6-A0 -> User defined )
9
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FM93CS56 Rev. A
Timing Diagrams (Continued)
WRITE ENABLE CYCLE (WEN)
PRE
PE
tCS
CS
SK
DI
1
0
0
A7
A6
A1
A0
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
DO
93CS56:
Address bits pattern -> 1-1-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE DISABLE CYCLE (WDS)
PRE
PE
t
CS
CS
SK
DI
1
0
0
A7
A6
A1
A0
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
DO
93CS56:
Address bits pattern -> 0-0-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE CYCLE (WRITE)
PRE
PE
tCS
CS
SK
1
0
1
A7
A6
A1
A0
D15 D14
D1
D0
DI
tWP
Start Opcode
Bit Bits(2)
Address
Bits(8)
Data
Bits(16)
High - Z
Ready
DO
Busy
93CS56:
Address bits pattern -> x-A6-A5-A4-A3-A2-A1-A0; (x -> Don't Care, can be 0 or 1); ( A6-A0 -> User defined )
Data bits pattern -> User defined
10
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FM93CS56 Rev. A
Timing Diagrams (Continued)
WRITE ALL CYCLE (WRALL)
PRE
PE
tCS
CS
SK
DI
1
0
0
A7
A6
A1
A0
D15 D14
D1
D0
tWP
Start Opcode
Bit Bits(2)
Address
Bits(8)
Data
Bits(16)
High - Z
Ready
DO
Busy
93CS56:
Address bits pattern -> 0-1-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
Data bits pattern -> User defined
PROTECT REGISTER READ CYCLE (PRREAD)
PRE
PE
t
CS
CS
SK
1
1
0
A7
A6
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
0
D7
D1
D0
DO
Dummy
Bit
93CS56:
Address bits pattern -> x-x-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
PROTECT REGISTER ENABLE CYCLE (PREN)
PRE
PE
tCS
CS
SK
1
0
0
A7
A6
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
DO
93CS56:
Address bits pattern -> 1-1-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
11
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FM93CS56 Rev. A
Timing Diagrams (Continued)
PROTECT REGISTER CLEAR CYCLE (PRCLEAR)
PRE
PE
tCS
CS
SK
DI
1
1
1
A7
A6
A1
A0
tWP
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
Ready
DO
Busy
93CS56:
Address bits pattern -> 1-1-1-1-1-1-1-1
PROTECT REGISTER WRITE CYCLE (PRWRITE)
PRE
PE
t
CS
CS
SK
DI
1
0
1
A7
A6
A1
A0
t
WP
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
Ready
DO
Busy
93CS56:
Address bits pattern -> x-A6-A5-A4-A3-A2-A1-A0; (x -> Don't Care, can be 0 or 1); ( A6-A0 -> User defined )
PROTECT REGISTER DISABLE CYCLE (PRDS)
PRE
PE
tCS
CS
SK
1
0
0
A7
A6
A1
A0
DI
tWP
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
Ready
DO
Busy
93CS56:
Address bits pattern -> 0-0-0-0-0-0-0-0
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FM93CS56 Rev. A
Timing Diagrams (Continued)
CLEARING READY STATUS
PRE
PE
CS
SK
DI
Start
Bit
High - Z
High - Z
Ready
DO
Busy
Note: This Start bit can also be part of a next instruction. Hence the cycle
can be continued(instead of getting terminated, as shown) as if a new
instruction is being issued.
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FM93CS56 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
5
0.228 - 0.244
(5.791 - 6.198)
1
2
3
4
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Package, Small Outline, 0.15 Wide, 8-Lead (M8)
Package Number M08A
14
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FM93CS56 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
Notes: Unless otherwise specified
1. Reference JEDEC registration MO153. Variation AA. Dated 7/93
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
15
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FM93CS56 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
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Tel: 81-3-3818-8840
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Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
16
www.fairchildsemi.com
FM93CS56 Rev. A
February 2000
FM93CS66
(MICROWIRE™ Bus Interface) 4096-Bit Serial EEPROM
with Data Protect and Sequential Read
General Description
Features
FM93CS66 is a 4096-bit CMOS non-volatile EEPROM organized
as 256 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat-
ible to many of standard Microcontrollers and Microprocessors.
FM93CS66 offers programmable write protection to the memory
array using a special register called Protect Register. Selected
memory locations can be protected against write by programming
this Protect Register with the address of the first memory location
to be protected (all locations greater than or equal to this first
addressarethenprotectedfromfurtherchange). Additionally, this
address can be “permanently locked” into the device, making all
future attempts to change data impossible. In addition this device
features “sequential read”, by which, entire memory can be read
in one cycle instead of multiple single byte read cycles. There are
10 instructions implemented on the FM93CS66, 5 of which are for
memory operations and the remaining 5 are for Protect Register
operations. This device is fabricated using Fairchild Semiconduc-
torfloating-gateCMOSprocessforhighreliability,highendurance
and low power consumption.
I Wide VCC 2.7V - 5.5V
I Programmable write protection
I Sequential register read
I Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I No Erase instruction required before Write instruction
I Self timed write cycle
I Device status during programming cycles
I 40 year data retention
I Endurance: 1,000,000 data changes
I Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
“LZ” and “L” versions of FM93CS66 offer very low standby current
makingthemsuitableforlowpowerapplications.Thisdeviceisoffered
in both SO and TSSOP packages for small space considerations.
Functional Diagram
VCC
CS
SK
INSTRUCTION
DECODER
CONTROL LOGIC
AND CLOCK
PRE
PE
INSTRUCTION
REGISTER
DI
GENERATORS
COMPARATOR
AND
WRITE ENABLE
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
ADDRESS
REGISTER
PROTECT
REGISTER
DECODER
EEPROM ARRAY
16
READ/WRITE AMPS
16
VSS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
1
© 1999 Fairchild Semiconductor Corporation
FM93CS66 Rev. A
www.fairchildsemi.com
Connection Diagram
Dual-In-Line Package (N)
8–Pin SO (M8) and 8–Pin TSSOP (MT8)
1
2
3
4
8
7
6
5
CS
SK
DI
VCC
PRE
PE
DO
GND
Top View
Package Number
N08E, M08A and MTC08
Pin Names
CS
SK
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
GND
PE
Program Enable
Protect Register Enable
Power Supply
PRE
VCC
Ordering Information
FM
93
CS XX LZ
E
XXX
Letter Description
Package
N
8-pin DIP
M8
MT8
8-pin SO
8-pin TSSOP
Temp. Range
None
0 to 70°C
V
E
-40 to +125°C
-40 to +85°C
Voltage Operating Range
Blank
L
4.5V to 5.5V
2.7V to 5.5V
LZ
2.7V to 5.5V and
<1µA Standby Current
Density
66
4096 bits
C
CMOS
CS
Data protect and sequential
read
Interface
93
MICROWIRE
Fairchild Memory Prefix
2
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FM93CS66 Rev. A
Absolute Maximum Ratings (Note 1)
Operating Conditions
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93CS66
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
+6.5V to -0.3V
FM93CS66E
FM93CS66V
Lead Temperature
(Soldering, 10 sec.)
+300°C
Power Supply (VCC
)
4.5V to 5.5V
ESD rating
2000V
DC and AC Electrical Characteristics VCC = 4.5V to 5.5V unless otherwise specified
Symbol
ICCA
Parameter
Conditions
CS = VIH, SK=1.0 MHz
CS = VIL
Min
Max
Units
Operating Current
1
mA
ICCS
Standby Current
50
-1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
2
0.8
VCC +1
V
V
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL = 2.1 mA
IOH = -400 µA
IOL = 10 µA
IOH = -10 µA
(Note 3)
0.4
0.2
1
2.4
VOL2
VOH2
Output Low Voltage
Output High Voltage
VCC - 0.2
fSK
SK Clock Frequency
SK High Time
MHz
ns
tSKH
0°C to +70°C
-40°C to +125°C
250
300
tSKL
tSKS
SK Low Time
250
50
ns
ns
SK Setup Time
tCS
Minimum CS Low Time
(Note 4)
250
ns
tCSS
tPRES
tDH
CS Setup Time
PRE Setup Time
DO Hold Time
PE Setup Time
DI Setup Time
100
50
ns
ns
ns
ns
ns
70
tPES
tDIS
50
100
tCSH
tPEH
tPREH
tDIH
CS Hold Time
PE Hold Time
PRE Hold Time
DI Hold Time
Output Delay
0
ns
ns
ns
ns
ns
250
50
20
tPD
500
500
tSV
CS to Status Valid
ns
tDF
CS to DO in Hi-Z
Write Cycle Time
CS = VIL
100
10
ns
tWP
ms
3
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FM93CS66 Rev. A
Absolute Maximum Ratings (Note 1)
Operating Conditions
Ambient Storage Temperature
-65°C to +150°C
Ambient Operating Temperature
FM93CS66L/LZ
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
All Input or Output Voltages
with Respect to Ground
+6.5V to -0.3V
FM93CS66LE/LZE
FM93CS66LV/LZV
Lead Temperature
(Soldering, 10 sec.)
+300°C
Power Supply (VCC
)
2.7V to 5.5V
ESD rating
2000V
DC and AC Electrical Characteristics VCC = 2.7V to 5.5V unless otherwise specified
Symbol
ICCA
Parameter
Conditions
CS = VIH, SK=1.0 MHz
CS = VIL
Min
Max
Units
Operating Current
1
mA
ICCS
Standby Current
L
LZ (2.7V to 4.5V)
10
1
µA
µA
IIL
IOL
Input Leakage
Output Leakage
VIN = 0V to VCC
(Note 2)
1
µA
VIL
VIH
Input Low Voltage
Input High Voltage
-0.1
0.8VCC
0.15VCC
VCC +1
V
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 10µA
IOH = -10µA
0.1VCC
V
0.9VCC
fSK
SK Clock Frequency
SK High Time
(Note 3)
0
1
250
KHz
µs
µs
tSKH
tSKL
tSKS
SK Low Time
1
SK Setup Time
0.2
µs
tCS
Minimum CS Low Time
(Note 4)
1
µs
tCSS
tPRES
tDH
CS Setup Time
PRE Setup Time
DO Hold Time
PE Setup Time
DI Setup Time
0.2
50
70
50
0.4
µs
ns
ns
ns
µs
tPES
tDIS
tCSH
tPEH
tPREH
tDIH
CS Hold Time
PE Hold Time
PRE Hold Time
DI Hold Time
Output Delay
0
ns
ns
ns
µs
µs
250
50
0.4
tPD
2
1
tSV
CS to Status Valid
µs
tDF
CS to DO in Hi-Z
Write Cycle Time
CS = VIL
0.4
15
µs
ms
tWP
Note 1: Stressabovethoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditionsabovethoseindicatedintheoperationalsectionsofthespecificationisnotimplied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
Capacitance TA = 25°C, f = 1 MHz (Note 5)
Note 2: Typical leakage values are in the 20nA range.
Symbol
Test
Typ Max Units
Note 3: TheshortestallowableSKclockperiod=1/fSK (asshownunderthefSK parameter). Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not
allowable to set 1/fSK = tSKHminimum + tSKLminimum for shorter SK cycle time operation.
COUT
CIN
Output Capacitance
Input Capacitance
5
5
pF
pF
Note 4: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all internal
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
0.3V/1.8V
VIL/VIH
VOL/VOH
Timing Level
0.8V/1.5V
IOL/IOH
Timing Level
2.7V ≤ VCC ≤ 5.5V
1.0V
10µA
(Extended Voltage Levels)
4.5V ≤ VCC ≤ 5.5V
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
4
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FM93CS66 Rev. A
Program Enable (PE)
Pin Description
This is an active high input pin to the device and is used to enable
operations, that are write in nature, to the memory array and to the
Protect register. When this pin is held high, operations that are
“write” in nature are enabled. When this pin is held low, operations
that are “write” in nature are disabled. This pin operates in
conjunctionwithPREpin. ReferTable1forfunctionalmatrixofthis
pin for various operations.
Chip Select (CS)
ThisisanactivehighinputpintoFM93CS66EEPROM(thedevice)
and is generated by a master that is controlling the device. A high
level on this pin selects the device and a low level deselects the
device. All serial communications with the device is enabled only
when this pin is held high. However this pin cannot be permanently
tied high, as a rising edge on this signal is required to reset the
internal state-machine to accept a new cycle and a falling edge to
initiateaninternalprogrammingafterawritecycle.Allactivityonthe
SK, DI and DO pins are ignored while CS is held low.
Microwire Interface
AtypicalcommunicationontheMicrowirebusismadethroughthe
CS, SK, DI and DO signals. To facilitate various operations on the
Memory array and on the Protect Register, a set of 10 instructions
are implemented on FM93CS66. The format of each instruction is
listed in Table 1.
Serial Clock (SK)
Thisisaninputpintothedeviceandisgeneratedbythemasterthat
is controlling the device. This is a clock signal that synchronizes the
communicationbetweenamasterandthedevice. Allinputinforma-
tion(DI)tothedeviceislatchedontherisingedgeofthisclockinput,
whileoutputdata(DO)fromthedeviceisdrivenfromtherisingedge
of this clock input. This pin is gated by CS signal.
Instruction
Each of the above 10 instructions is explained under individual
instruction descriptions.
Start Bit
Serial Input (DI)
This is a 1-bit field and is the first bit that is clocked into the device
whenaMicrowirecyclestarts.Thisbithastobe“1”foravalidcycle
to begin. Any number of preceding “0” can be clocked into the
device before clocking a “1”.
This is an input pin to the device and is generated by the master
that is controlling the device. The master transfers Input informa-
tion (Start bit, Opcode bits, Array addresses and Data) serially via
this pin into the device. This Input information is latched on the
rising edge of the SCK. This pin is gated by CS signal.
Opcode
Serial Output (DO)
This is a 2-bit field and should immediately follow the start bit.
These two bits (along with PRE, PE signals and 2 MSB of address
field) select a particular instruction to be executed.
This is an output pin from the device and is used to transfer Output
data via this pin to the controlling master. Output data is serially
shifted out on this pin from the rising edge of the SCK. This pin is
active only when the device is selected.
Address Field
This is a 8-bit field and should immediately follow the Opcode bits.
In FM93CS66, all 8 bits are used for address decoding during
READ, WRITE and PRWRITE instructions.During all other in-
structions (with the exception of PRREAD), the MSB 2 bits are
used to decode instruction (along with Opcode bits, PRE and PE
signals).
Protect Register Enable (PRE)
This is an active high input pin to the device and is used to
distinguish operations to memory array and operations to Protect
Register. When this pin is held low, operations to the memory
array are enabled. When this pin is held high, operations to the
Protect Register are enabled. This pin operates in conjunction
with PE pin. Refer Table1 for functional matrix of this pin for
various operations.
Data Field
This is a 16-bit field and should immediately follow the Address
bits. Only the WRITE and WRALL instructions require this field.
D15 (MSB) is clocked first and D0 (LSB) is clocked last (both
during writes as well as reads).
TABLE 1. Instruction set
Instruction Start Bit Opcode Field
Address Field
Data Field PRE Pin
PE Pin
READ
WEN
1
1
1
1
1
1
1
1
1
1
10
00
01
00
00
10
00
11
01
00
A7 A6 A5 A4 A3 A2 A1 A0
0
0
X
1
1
1
X
X
1
1
1
1
1
1
X
X
X
X
X
X
WRITE
WRALL
WDS
A7 A6 A5 A4 A3 A2 A1 A0
D15-D0
D15-D0
0
0
0
1
1
1
1
1
0
0
X
1
1
1
0
X
1
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
X
X
X
X
1
PRREAD
PREN
PRCLEAR
PRWRITE
PRDS
A7 A6 A5 A4 A3 A2 A1 A0
0
0
0
0
0
0
0
0
5
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FM93CS66 Rev. A
the part. Input information (Start bit, Opcode and Address) for this
WEN instruction should be issued as listed under Table1. The
device becomes write-enabled at the end of this cycle when the
CS signal is brought low. The PRE pin should be held low during
thiscycle.ExecutionofaREADinstructionisindependentofWEN
instruction. Refer Write Enable cycle diagram.
Functional Description
A typical Microwire cycle starts by first selecting the device
(bringing the CS signal high). Once the device is selected, a valid
Start bit (“1”) should be issued to properly recognize the cycle.
Following this, the 2-bit opcode of appropriate instruction should
be issued. After the opcode bits, the 8-bit address information
should be issued. For certain instructions, some (or all) of these
8 bits are don’t care values (can be “0” or “1”), but they should still
be issued. Following the address information, depending on the
instruction (WRITE and WRALL), 16-Bit data is issued. Other-
wise, depending on the instruction (READ and PRREAD), the
device starts to drive the output data on the DO line. Other
instructions perform certain control functions and do not deal with
data bits. The Microwire cycle ends when the CS signal is brought
low. However during certain instructions, falling edge of the CS
signal initiates an internal cycle (Programming), and the device
remains busy till the completion of the internal cycle. Each of the
10 instructions is explained in detail in the following sections.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in
the memory with a specified data. This instruction is valid only
when the following are true:
I Device is write-enabled (Refer WEN instruction)
I Address of the write location is not write-protected
I PE pin is held high during this cycle
I PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRITE instruction should be issued as listed under Table1. After
inputtingthelastbitofdata(D0bit), CSsignalmustbebroughtlow
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Memory Instructions
Following five instructions, READ, WEN, WRITE, WRALL and
WDS are specific to operations intended for memory array. The
PRE pin should be held low during these instructions.
1) Read and Sequential Read (READ)
The status of the internal programming cycle can be polled at any
time by bringing the CS signal high again, after tCS interval. When
CS signal is high, the DO pin indicates the READY/BUSY status
of the chip. DO = logical 0 indicates that the programming is still
in progress. DO = logical 1 indicates that the programming is
finished and the device is ready for another instruction. It is not
required to provide the SK clock during this status polling. While
the device is busy, it is recommended that no new instruction be
issued. Refer Write cycle diagram.
READ instruction allows data to be read from a selected location
in the memory array. Input information (Start bit, Opcode and
Address) for this instruction should be issued as listed under
Table1. Upon receiving a valid input information, decoding of the
opcode and the address is made, followed by data transfer from
the selected memory location into a 16-bit serial-out shift register.
This 16-bit data is then shifted out on the DO pin. D15 bit (MSB)
is shifted out first and D0 bit (LSB) is shifted out last. A dummy-bit
(logical 0) precedes this 16-bit data output string. Output data
changes are initiated on the rising edge of the SK clock. After
reading the 16-bit data, the CS signal can be brought low to end
the Read cycle. The PRE pin should be held low during this cycle.
Refer Read cycle diagram.
It is also recommended to follow this instruction (after the device
becomes READY) with a Write Disable (WDS) instruction to
safeguarddataagainstcorruptionduetospuriousnoise,inadvert-
ent writes etc.
4) Write All (WRALL)
This device also offers “sequential memory read” operation to
allowreadingofdatafromtheadditionalmemorylocationsinstead
ofjustonelocation.Itisstartedinthesamemannerasnormalread
but the cycle is continued to read further data (instead of terminat-
ing after reading the first 16-bit data). After providing 16-bit data,
the device automatically increments the address pointer to the
next location and continues to provide the data from that location.
Any number of locations can be read out in this manner, however,
after reading out from the last location, the address pointer points
back to the first location. If the cycle is continued further, data will
be read from this first location onward. In this mode of read, the
dummy-bit is present only when the very first data is read (like
normal read cycle) and is not present on subsequent data reads.
The PRE pin should be held low during this cycle. Refer Sequen-
tial Read cycle diagram.
Write all (WRALL) instruction is similar to the Write instruction
except that WRALL instruction will simultaneously program all
memorylocationswiththedatapatternspecifiedintheinstruction.
This instruction is valid only when the following are true:
I Protect Register has been cleared (Refer PRCLEAR
instruction)
I Device is write-enabled (Refer WEN instruction)
I PE pin is held high during this cycle
I PRE pin should be held low during this cycle
Input information (Start bit, Opcode, Address and Data) for this
WRALL instruction should be issued as listed under Table1. After
inputtingthelastbitofdata(D0bit), CSsignalmustbebroughtlow
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. ReferWrite All
cycle diagram.
2) Write Enable (WEN)
When VCC is applied to the part, it “powers up” in the Write Disable
(WDS) state. Therefore, all programming operations (for both
memory array and Protect Register) must be preceded by a Write
Enable (WEN) instruction. Once a Write Enable instruction is
executed, programming remains enabled until a Write Disable
(WDS) instruction is executed or VCC is completely removed from
6
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FM93CS66 Rev. A
I PREN instruction was executed immediately prior to
PRCLEAR instruction
5) Write Disable (WDS)
Write Disable (WDS) instruction disables all programming opera-
tions and is recommended to follow all programming operations.
Executing this instruction after a valid write instruction would
protect against accidental data disturb due to spurious noise,
glitches,inadvertentwritesetc.Inputinformation(Startbit,Opcode
and Address) for this WDS instruction should be issued as listed
under Table1. The device becomes write-disabled at the end of
this cycle when the CS signal is brought low. Execution of a READ
instructionisindependentofWDSinstruction. ReferWriteDisable
cycle diagram.
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
Inputinformation(Startbit,OpcodeandAddress)forthisPRCLEAR
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed clear cycle. It takes tWP time (Refer
appropriate DC and AC Electrical Characteristics table) for the
internal clear cycle to finish. During this time, the device remains
busy and is not ready for another instruction. Status of the internal
programmingcanbepolledasdescribedunderWRITEinstruction
description. While the device is busy, it is recommended that no
new instruction be issued. Refer Protect Register Clear cycle
diagram.
Protect Register Instructions
Following five instructions, PRREAD, PREN, PRCLEAR,
PRWRITE and PRDS are specific to operations intended for
Protect Register. The PRE pin should be held high during these
instructions.
4) Protect Register Write (PRWRITE)
1) Protect Register Read (PRREAD)
Thisinstructionisusedtowritethestartingaddressofthememory
section to be write-protected into the Protect register. After the
execution of PRWRITE instruction, all memory locations greater
than or equal to this address are write-protected. PRWRITE
instruction is enabled (valid) only the following are true:
This instruction reads the content of the internal Protect Register.
Content of this register is 8-bit wide and is the starting address of
the “write-protected” section of the memory array. All memory
locationsgreaterthanorequaltothisaddressarewrite-protected.
Inputinformation(Startbit,OpcodeandAddress)forthisPRREAD
instruction should be issued as listed under Table 1. Upon
receivingavalidinputinformation,decodingoftheopcodeandthe
address is made, followed by data transfer (address information)
from the Protect Register. This 8-bit data is then shifted out on the
DO pin with the MSB first and the LSB last. Like the READ
instruction a dummy-bit (logical 0) precedes this 8-bit data output
string. Output data changes are initiated on the rising edge of the
SKclock.Afterreadingthe8-bitdata,theCSsignalcanbebrought
low to end the PRREAD cycle. The PRE pin should be held high
during this cycle. Refer Protect Register Read cycle diagram.
I PRCLEAR instruction was executed first (to clear the Protect
Register)
I PREN instruction was executed immediately prior to
PRWRITE instruction
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
Inputinformation(Startbit,OpcodeandAddress)forthisPRWRITE
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer Protect
Register Write cycle diagram.
2) Protect Register Enable (PREN)
This instruction is required to enable PRCLEAR, PRWRITE and
PRDS instructions and should be executed prior to executing
PRCLEAR, PRWRITE and PRDS instructions. However, this
PREN instruction is enabled (valid) only the following are true
I Device is write-enabled (Refer WEN instruction)
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
5) Protect Register Disable (PRDS)
Input information (Start bit, Opcode and Address) for this PREN
instruction should be issued as listed under Table1. The Protect
Register becomes enabled for PRCLEAR, PRWRITE and PRDS
instructions at the end of this cycle when the CS signal is brought
low. Note that this PREN instruction must immediately precede
a PRCLEAR, PRWRITE or PRDS instruction. In other words, no
other instruction should be executed between a PREN instruction
and a PRCLEAR, PRWRITE or PRDS instruction. Refer Protect
Register Enable cycle diagram.
Unlike all other instructions, this instruction is a one-time-only
instruction which when executed permanently write-protects
the Protect Register and renders it unalterable in the future. This
instruction is useful to safeguard vital data (typically read only
data) in the memory against any possible corruption. PRDS
instruction is enabled (valid) only the following are true:
I PREN instruction was executed immediately prior to PRDS
instruction
I PE pin is held high during this cycle
I PRE pin is held high during this cycle
3) Protect Register Clear (PRCLEAR)
This instruction clears the content of the Protect register and
therefore enables write operations (WRITE or WRALL) to all
memory locations. Executing this instruction will program the
content of the Protect Register with a pattern of all 1s. However,
in this case, WRITE operation to the last memory address
(0x11111111) is still enabled. PRCLEAR instruction is enabled
(valid) only when the following are true:
7
www.fairchildsemi.com
FM93CS66 Rev. A
Input information (Start bit, Opcode and Address) for this PRDS
instructionshouldbeissuedaslistedunderTable1. Afterinputting
the last bit of address (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. The Protect
Register is permanently write-protected at the end of this cycle.
Refer Protect Register Disable cycle diagram.
Clearing of Ready/Busy status
When programming is in progress, the Data-Out pin will display
the programming status as either BUSY (low) or READY (high)
when CS is brought high (DO output will be tri-stated when CS is
low). To restate, during programming, the CS pin may be brought
high and low any number of times to view the programming status
without affecting the programming operation. Once programming
is completed (Output in READY state), the output is ‘cleared’
(returned to normal tri-state condition) by clocking in a Start Bit.
After the Start Bit is clocked in, the output will return to a tri-stated
condition. When clocked in, this Start Bit can be the first bit in a
command string, or CS can be brought low again to reset all
internal circuits. Refer Clearing Ready Status diagram.
Related Document
Application Note: AN758 - Using Fairchild’s MICROWIRE™ EE-
PROM.
8
www.fairchildsemi.com
FM93CS66 Rev. A
Timing Diagrams
SYNCHRONOUS DATA TIMING
CS
SK
PRE
PE
DI
t
t
t
t
t
CSH
SKS
CSS
SKH
SKL
t
t
PREH
PRES
t
t
PEH
PES
t
t
DIH
DIS
Valid
Input
Valid
Input
t
PD
t
t
DF
DF
t
t
PD
DH
Valid
Output
Valid
Output
DO (Data Read)
t
SV
Valid Status
DO (Status Read)
NORMAL READ CYCLE (READ)
PRE
PE
t
CS
CS
SK
1
1
0
A7
A6
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
0
D15
D1
D0
DO
Dummy
Bit
93CS66:
Address bits pattern -> User defined
SEQUENTIAL READ CYCLE (PRE = 0; PE = X)
PRE
t
CS
CS
SK
1
1
0
A7
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
0
D15
D0
D15
D0
D15
D0
DO
Dummy
Bit
Data(n)
Data(n+1)
Data(n+2)
93CS66:
Address bits pattern -> User defined
9
www.fairchildsemi.com
FM93CS66 Rev. A
Timing Diagrams (Continued)
WRITE ENABLE CYCLE (WEN)
PRE
PE
tCS
CS
SK
DI
1
0
0
A7
A6
A1
A0
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
DO
93CS66:
Address bits pattern -> 1-1-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE DISABLE CYCLE (WDS)
PRE
PE
t
CS
CS
SK
DI
1
0
0
A7
A6
A1
A0
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
DO
93CS66:
Address bits pattern -> 0-0-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE CYCLE (WRITE)
PRE
PE
tCS
CS
SK
1
0
1
A7
A6
A1
A0
D15 D14
D1
D0
DI
tWP
Start Opcode
Bit Bits(2)
Address
Bits(8)
Data
Bits(16)
High - Z
Ready
DO
Busy
93CS66:
Address bits pattern -> User defined
Data bits pattern -> User defined
10
www.fairchildsemi.com
FM93CS66 Rev. A
Timing Diagrams (Continued)
WRITE ALL CYCLE (WRALL)
PRE
PE
tCS
CS
SK
DI
1
0
0
A7
A6
A1
A0
D15 D14
D1
D0
tWP
Start Opcode
Bit Bits(2)
Address
Bits(8)
Data
Bits(16)
High - Z
Ready
DO
Busy
93CS66:
Address bits pattern -> 0-1-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
Data bits pattern -> User defined
PROTECT REGISTER READ CYCLE (PRREAD)
PRE
PE
t
CS
CS
SK
1
1
0
A7
A6
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
0
D7
D1
D0
DO
Dummy
Bit
93CS66:
Address bits pattern -> x-x-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
PROTECT REGISTER ENABLE CYCLE (PREN)
PRE
PE
tCS
CS
SK
1
0
0
A7
A6
A1
A0
DI
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
DO
93CS66:
Address bits pattern -> 1-1-x-x-x-x-x-x; (x -> Don't Care, can be 0 or 1)
11
www.fairchildsemi.com
FM93CS66 Rev. A
Timing Diagrams (Continued)
PROTECT REGISTER CLEAR CYCLE (PRCLEAR)
PRE
PE
tCS
CS
SK
DI
1
1
1
A7
A6
A1
A0
tWP
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
Ready
Ready
Ready
DO
Busy
93CS66:
Address bits pattern -> 1-1-1-1-1-1-1-1
PROTECT REGISTER WRITE CYCLE (PRWRITE)
PRE
PE
tCS
CS
SK
1
0
1
A7
A6
A1
A0
DI
tWP
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
DO
Busy
93CS66:
Address bits pattern -> User defined
PROTECT REGISTER DISABLE CYCLE (PRDS)
PRE
PE
tCS
CS
SK
1
0
0
A7
A6
A1
A0
DI
tWP
Start Opcode
Bit Bits(2)
Address
Bits(8)
High - Z
DO
Busy
93CS66:
Address bits pattern -> 0-0-0-0-0-0-0-0
12
www.fairchildsemi.com
FM93CS66 Rev. A
Timing Diagrams (Continued)
CLEARING READY STATUS
PRE
PE
CS
SK
DI
Start
Bit
High - Z
High - Z
Ready
DO
Busy
Note: This Start bit can also be part of a next instruction. Hence the cycle
can be continued(instead of getting terminated, as shown) as if a new
instruction is being issued.
13
www.fairchildsemi.com
FM93CS66 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8
7
6
3
5
4
0.228 - 0.244
(5.791 - 6.198)
1
2
Lead #1
IDENT
0.150 - 0.157
(3.810 - 3.988)
0.053 - 0.069
(1.346 - 1.753)
0.010 - 0.020
(0.254 - 0.508)
0.004 - 0.010
(0.102 - 0.254)
x 45°
8° Max, Typ.
All leads
Seating
Plane
0.04
0.0075 - 0.0098
(0.190 - 0.249)
Typ. All Leads
(0.102)
All lead tips
0.014
(0.356)
0.016 - 0.050
(0.406 - 1.270)
Typ. All Leads
0.050
(1.270)
Typ
0.014 - 0.020
(0.356 - 0.508)
Typ.
Molded Package, Small Outline, 0.15 Wide, 8-Lead (M8)
Package Number M08A
14
www.fairchildsemi.com
FM93CS66 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.114 - 0.122
(2.90 - 3.10)
8
5
(7.72) Typ
(4.16) Typ
0.169 - 0.177
(4.30 - 4.50)
0.246 - 0.256
(6.25 - 6.5)
(1.78) Typ
(0.42) Typ
0.123 - 0.128
(3.13 - 3.30)
(0.65) Typ
Land pattern recommendation
1
4
Pin #1 IDENT
0.0433
Max
(1.1)
0.0035 - 0.0079
See detail A
0.002 - 0.006
(0.05 - 0.15)
0.0256 (0.65)
Typ.
Gage
plane
0.0075 - 0.0098
(0.19 - 0.30)
0°-8°
DETAIL A
Typ. Scale: 40X
0.0075 - 0.0098
(0.19 - 0.25)
0.020 - 0.028
(0.50 - 0.70)
Seating
plane
Notes: Unless otherwise specified
1. Reference JEDEC registration MO153. Variation AA. Dated 7/93
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
15
www.fairchildsemi.com
FM93CS66 Rev. A
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8
7
0.032 0.005
(0.813 0.127)
RAD
8
7
6
5
4
0.092
(2.337)
DIA
0.250 - 0.005
(6.35 0.127)
Pin #1
IDENT
+
Pin #1 IDENT
1
Option 1
1
2
3
Option 2
0.280
MIN
0.040
(1.016)
Typ.
(7.112)
0.030
0.145 - 0.200
(3.683 - 5.080)
0.039
(0.991)
MAX
(0.762)
0.300 - 0.320
(7.62 - 8.128)
20° 1°
0.130 0.005
(3.302 0.127)
0.125 - 0.140
95° 5°
(3.175 - 3.556)
0.065
(1.651)
0.125
(3.175)
DIA
0.020
90° 4°
Typ
0.009 - 0.015
(0.229 - 0.381)
(0.508)
Min
0.018 0.003
(0.457 0.076)
NOM
+0.040
-0.015
0.325
0.100 0.010
+1.016
-0.381
8.255
(2.540 0.254)
0.045 0.015
(1.143 0.381)
0.060
(1.524)
0.050
(1.270)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a)areintendedforsurgicalimplantintothebody,or(b)support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably ex-
pected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Americas
Fairchild Semiconductor
Europe
Fairchild Semiconductor
Hong Kong
Fairchild Semiconductor
Japan Ltd.
Customer Response Center
Tel. 1-888-522-5372
Fax:
Tel:
Tel:
Tel:
Tel:
+44 (0) 1793-856858
8/F, Room 808, Empire Centre
68 Mody Road, Tsimshatsui East
Kowloon. Hong Kong
Tel; +852-2722-8338
Fax: +852-2722-8383
4F, Natsume Bldg.
Deutsch
English
Français
Italiano
+49 (0) 8141-6102-0
+44 (0) 1793-856856
+33 (0) 1-6930-3696
+39 (0) 2-249111-1
2-18-6, Yushima, Bunkyo-ku
Tokyo, 113-0034 Japan
Tel: 81-3-3818-8840
Fax: 81-3-3818-8841
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
16
www.fairchildsemi.com
FM93CS66 Rev. A
Discr ete P OWER & Sign a l
Tech n ologies
FMB100
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT -6
Mark: .NA
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings*
TA =25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
45
75
V
V
6.0
V
Collector Current - Continuous
500
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FMB100
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
700
5.6
180
mW
mW/°C
°C/W
RθJA
1998 Fairchild Semiconductor Corporation
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
75
45
V
V
I
C = 10 µA, IB = 0
BVCEO
Collector-Emitter Breakdown
Voltage*
IC = 1 mA, IE = 0
BVEBO
ICBO
Emitter-Base Breakdown Voltage
6.0
V
IE = 10 µA, IC = 0
VCB = 60 V
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
50
50
50
nA
nA
nA
ICES
VCE = 40 V
IEBO
VEB = 4 V
ON CHARACTERISTICS
hFE
DC Current Gain
80
I
C = 100 µA, VCE = 1.0 V
100
100
100
450
350
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V*
IC = 150 mA, VCE = 5.0 V*
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
0.2
0.4
0.85
1.0
V
V
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Output Capacitance
VCE = 20 V, IC = 20 mA
VCB = 5.0 V, f = 1.0 MHz
300
3.5
2.5
MHz
pF
Cobo
NF
Noise Figure
dB
I
C = 100 µA, VCE = 5.0 V,
G = 2.0 kΩ, f = 1.0 kHz
R
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
400
0.4
0.3
0.2
0.1
Vce = 5V
125 °C
β
= 10
300
200
100
0
25 °C
25 °C
- 40 °C
125 °C
- 40 °C
10
20 30
50
100
200 300 500
1
10
100
400
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
1
- 40 °C
- 40 °C
0.8
0.8
25 °C
25 °C
0.6
0.6
125 °C
125 °C
0.4
0.4
V
= 5V
β
= 10
CE
0.2
0.2
0.1
1
10
100
500
1
10
100
300
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Voltage
Collector-Cutoff Current
vs Ambient Temperature
100
10
1
10
f = 1.0 MHz
VCB = 60V
Cib
1
Cob
0.1
0.1
25
50
75
100
125
º
150
0.1
1
10
100
TA- AMBIENT TEMPERATURE ( C)
V
- COLLECTOR VOLTAGE(V)
ce
Switching Times vs
Collector Current
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
300
270
240
210
180
150
120
90
t
s
SOT-6
IB1 = IB2 = Ic / 10
V
= 10 V
cc
t
f
t
0.25
0
r
60
30
t
d
0
10
20
30
50
100
200 300
0
25
50
75
100
125
150
TEMPERATURE (oC)
IC - COLLECTOR CURRENT (mA)
Discrete Power
&
Signal Technologies
FMB1020
Package: SuperSOT-6
Device Marking: .004
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
This dual complementary device was designed for use as a general purpose amplifier applications at
collector currents to 300mA. Sourced from Process 10 (NPN ) and Process 68 (PNP).
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
Value
Symbol
VCEO
VCBO
VEBO
Parameter
Units
Collector-Emitter Voltage
45
V
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
60
V
V
6
500
mA
°C
IC
Operating and Storage Junction Temperature Range
-55 to +150
TJ, TSTG
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA
= 25°C unless otherwise noted
Symbol
Characteristics
Total Device Dissipation, total
per side
Thermal Resistance, Junction to Ambient, total
Max
Units
700
350
mW
PD
180
°C/W
RqJA
ã 1998 Fairchild Semiconductor Corporation
Page 1 of 2
fmb1020.lwpPr10&68(Y4)
NPN & PNP Complementary Dual Transistor
(continued)
Electrical Characteristics TA
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector to Emitter Voltage
Ic = 1.0 mA
45
60
6
V
V
BVCEO
BVCBO
BVEBO
ICBO
Collector to Base Voltage
Emitter to Base Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Ic = 10 uA
Ie = 10 uA
Vcb = 50 V
Vce = 40 V
Veb = 4 V
V
50
50
50
nA
nA
nA
ICES
IEBO
ON CHARACTERISTICS
DC Current Gain
hFE
Vce = 1V, Ic = 100uA
Vce = 1V, Ic = 10mA
Vce = 1V, Ic = 100mA
Vce = 5V, Ic = 150mA
80
-
100
100
100
450
350
Collector-Emitter Saturation Voltage Ic = 10mA, Ib = 1mA
Ic = 200mA, Ib = 20mA
0.2
0.4
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage
Ic = 10mA, Ib = 1mA
0.85
1.0
Ic = 200mA, Ib = 20mA
SMALL SIGNAL CHARACTERISTICS
TYP
Output Capacitance
COB
Vcb = 10V, f = 1MHz
4.5
pF
MHz
dB
Current Gain - Bandwidth Product Vce = 20V, Ic = 20mA, f = 100MHz
300
2.5
fT
NF
Noise Figure
Vce = 5V, Ic = 100uA,
Rs = 2kohms, f = 1 kHz
ã 1998 Fairchild Semiconductor Corporation
Page 2 of 2
fmb1020.lwpPr10&68(Y4)
Discr ete P OWER & Sign a l
Tech n ologies
FMB200
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT -6
Mark: .N2
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
45
60
V
V
6.0
V
Collector Current - Continuous
500
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FMB200
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
700
5.6
180
mW
mW/°C
°C/W
RθJA
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
60
45
V
V
I
C = 10 µA, IB = 0
BVCEO
Collector-Emitter Breakdown
Voltage*
IC = 1.0 mA, IE = 0
BVEBO
ICBO
Emitter-Base Breakdown Voltage
6.0
V
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
VCE = 40 V, IE = 10
VEB = 4.0 V, IC = 0
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
50
50
50
nA
nA
nA
ICES
IEBO
ON CHARACTERISTICS
hFE
DC Current Gain
80
I
C = 100 µA, VCE = 1.0 V
100
100
450
350
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 5.0 V*
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
0.2
0.4
0.85
1.0
V
V
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
VCE = 20 V, IC = 20 mA
VCB = 10 V, f = 1.0 MHz
300
4.5
2.5
MHz
pF
Output Capacitance
Cobo
NF
Noise Figure
dB
IC = 100 µA, VCE = 5.0 V,
RG = 2.0 kΩ, f = 1.0 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
0.3
0.25
0.2
VCE = 5V
125 °C
β
= 10
400
300
200
100
0
0.15
0.1
25 °C
25 °C
- 40 °C
0.05
125 ºC
- 40 ºC
0
0.1
1
10
100
300
0.01
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Base Emitter ON Voltage vs
Voltage vs Collector Current
Collector Current
1.2
1
β
= 10
1
0.8
0.6
0.4
0.2
0
0.8
- 40 ºC
25 °C
- 40 ºC
0.6
25 °C
125 ºC
125 ºC
0.4
V
= 5V
0.2
0
CE
0.1
1
10
100
300
0.1
1
10
100 200
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
100
10
V
= 50V
CB
95
90
85
80
75
70
1
0.1
0.01
25
50
75
100
125
0.1
1
10
100
1000
TA- AMBIENT TEMPERATURE (ºC)
RESISTANCE (kΩ)
Input and Output Capacitance
vs Reverse Voltage
Collector Saturation Region
4
3
2
1
0
100
Ta = 25°C
f = 1.0 MHz
Ic =
10
100 uA
300 mA
50 mA
Cib
Cob
100
300
700
2000 4000
0.1
1
10
100
I
- BASE CURRENT (uA)
V
- COLLECTOR VOLTAGE(V)
B
ce
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Switching Times vs
Gain Bandwidth Product
Collector Current
vs Collector Current
300
40
270
240
210
180
150
120
90
t
V
= 5V
s
ce
30
20
10
0
IB1 = IB2 = Ic / 10
V
= 10 V
cc
t
f
t
r
60
30
t
d
0
10
20
30
50
100
200 300
1
10
20
50
100 150
IC - COLLECTOR CURRENT (mA)
IC- COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
SOT-6
0.75
0.5
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
Discr ete P OWER & Sign a l
Tech n ologies
FMB2222A
FFB2222A
MMPQ2222A
B4
E2
B2
C2
E1
E4
B3
E3
C1
B2
E2
C1
B1
E1
C4
C4
C3
C2
B1
B2
E2
C3
C2
pin #1
E1
B1
pin #1
C2
C1
C1
SuperSOT -6
SC70-6
Mark: .1P
SOIC-16
Mark: .1P
NPN Multi-Chip General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
40
75
V
V
6.0
500
V
Collector Current - Continuous
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB2222A
FMB2222A
MMPQ2222A
PD
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
300
2.4
415
700
5.6
180
1,000
8.0
mW
mW/°C
°C/W
°C/W
°C/W
125
240
Each Die
1998 Fairchild Semiconductor Corporation
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
40
V
Voltage*
V(BR)CBO
V(BR)EBO
ICEX
Collector-Base Breakdown Voltage
75
V
V
I
I
C = 10 µA, IE = 0
E = 10 µA, IC = 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
6.0
VCE = 60 V, VEB(OFF) = 3.0 V
10
nA
ICBO
Collector Cutoff Current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 125°C
VEB = 3.0 V, IC = 0
0.01
10
µA
µA
nA
IEBO
IBL
Emitter Cutoff Current
Base Cutoff Current
10
20
VCE = 60 V, VEB(OFF) = 3.0 V
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
35
50
75
35
100
50
IC= 10 mA,VCE= 10 V,TA= -55°C
IC = 150 mA, VCE = 10 V*
IC = 150 mA, VCE = 1.0 V*
IC = 500 mA, VCE = 10 V*
300
40
Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.3
1.0
1.2
2.0
V
V
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage*
IC = 150 mA, IB = 1.0 mA
IC = 500 mA, IB = 50 mA
0.6
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 20 V,
f = 100 MHz
300
MHz
Output Capacitance
Input Capacitance
Noise Figure
VCB = 10 V, IE = 0, f = 100 kHz
4.0
20
pF
pF
dB
Cobo
Cibo
NF
VEB = 0.5 V, IC = 0, f = 100 kHz
2.0
I
C = 100 µA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 30 V, VBE(OFF) = 0.5 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
8
ns
ns
ns
ns
td
tr
20
180
40
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
vs Collector Current
Voltage vs Collector Current
500
0.4
V
= 5V
CE
β
= 10
400
300
200
100
0
0.3
0.2
0.1
125 °C
25 °C
125 °C
25 °C
- 40 °C
- 40 °C
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
0.6
0.4
0.2
β = 10
V
= 5V
1
0.8
0.6
0.4
CE
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125 °C
0.1
1
10
25
1
10
100
500
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
500
100
20
16
12
8
f = 1 MHz
V
= 40V
CB
10
1
C
te
0.1
C
ob
4
25
50
75
100
125
150
0.1
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Turn On and Turn Off Times
Switching Times
vs Collector Current
vs Collector Current
400
400
I
I
c
c
IB1= IB2
=
IB1 = IB2
=
10
10
320
240
160
80
320
240
160
80
V
= 25 V
V
= 25 V
cc
cc
t
s
t
r
t
off
t
f
t
t
on
d
0
10
0
10
100
1000
100
- COLLECTOR CURRENT (mA)
1000
I
- COLLECTOR CURRENT (mA)
I
C
C
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
SOT-6
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
NPN Multi-Chip General Purpose Amplifier
(continued)
Test Circuits
30 V
200 Ω
16 V
1.0 KΩ
0
≤ 200ns
500 Ω
FIGURE 1: Saturated Turn-On Switching Time
6.0 V
- 15 V
1k
37 Ω
30 V
1.0 KΩ
0
≤ 200ns
50 Ω
FIGURE 2: Saturated Turn-Off Switching Time
Discrete Power
&
Signal Technologies
FMB2227A
C2
E1
Package: SuperSOT-6
Device Marking: .001
C1
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
B2
E2
B1
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
This complementary dual device was designed for use as a medium power amplifier and switch requiring
collector currents up to 300mA. Sourced from Pr19 (NPN) and Pr63 (PNP).
Absolute Maximum Ratings
TA
= 25°C unless otherwise noted
Value
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Units
Collector-Emitter Voltage
30
V
Collector-Base Voltage
Emitter-Base Voltage
60
V
V
5
500
Collector Current
mA
W
Power Dissipation @Ta = 25°C*
Storage Temperature Range
Junction Temperature
0.7
PD
-55 to +150
150
°C
TSTG
TJ
°C
Thermal Resistance, Junction to Ambient
180
°C/W
RqJA
Electrical Characteristics
TA
= 25°C unless otherwise noted
Test Conditions
Min
Symbol
BVCEO
BVCBO
BVEBO
Parameter
Max
Units
Collector to Emitter Voltage
Ic = 10 mA
30
V
Collector to Base Voltage
Emitter to Base Voltage
Ic = 10 uA
Ie = 10 uA
60
5
V
V
ã
1998 Fairchild Semiconductor Corporation
Page 1 of 2
2227A.lwpPr19&63(Y1)
NPN & PNP Complementary Dual Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Test Conditions
Min
Symbol
Parameter
Max
Units
Collector Cutoff Current
Vcb = 50V
30
nA
ICBO
Emitter Cutoff Current
DC Current Gain
Veb = 3.0V
30
nA
-
IEBO
hFE
Vce = 10V, Ic = 1.0mA
Vce = 10V, Ic = 10mA
Vce = 10V, Ic = 150mA
Vce = 10V, Ic = 300mA
50
75
100
30
Collector-Emitter Saturation Voltage Ic = 150mA, Ib=15mA
Ic = 300mA, Ib=30mA
0.4
1.4
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage
Ic = 150mA, Ib=15mA
1.3
Small - Signal Characteristics
Typical
Output Capacitance
COB
Vcb = 10V, f = 1.0MHz
6
pF
pF
Input Capacitance
CIB
Veb = 0.5V, f = 100kHz
20
Current Gain - Bandwidth Product
Vce = 20V, Ic = 50mA, f = 100MHz
250
MHz
fT
ã
1998 Fairchild Semiconductor Corporation
Page 2 of 2
2227A.lwpPr19&63(Y1)
Discr ete P OWER & Sign a l
Tech n ologies
FMB2907A
FFB2907A
MMPQ2907A
B4
E2
B2
C2
E1
E4
B3
E3
C1
B2
E2
C1
B1
E1
C4
C4
C3
C2
B1
B2
E2
C3
C2
pin #1
E1
B1
pin #1
C2
C1
C1
SuperSOT -6
SC70-6
Mark: .2F
SOIC-16
Mark: .2F
PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
60
60
V
V
5.0
600
V
Collector Current - Continuous
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB2907A
FMB2907A
MMPQ2907A
PD
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
300
2.4
415
700
5.6
180
1,000
8.0
mW
mW/°C
°C/W
°C/W
°C/W
125
240
Each Die
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
60
V
Voltage*
V(BR)CBO
V(BR)EBO
IB
Collector-Base Breakdown Voltage
60
V
V
I
I
C = 10 µA, IE = 0
E = 10 µA, IC = 0
Emitter-Base Breakdown Voltage
Base Cutoff Current
5.0
VCB = 30 V, VEB = 0.5 V
VCE = 30 V, VBE = 0.5 V
50
50
nA
nA
ICEX
Collector Cutoff Current
Collector Cutoff Current
ICBO
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 125°C
0.02
20
µA
µA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
75
100
100
100
50
300
Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
1.3
2.6
V
V
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 20 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 100 kHz
VEB = 2.0 V, IC = 0,
f = 100 kHz
250
6.0
12
MHz
pF
Output Capacitance
Cobo
Cibo
Input Capacitance
pF
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
ton
td
tr
Turn-off Time
Storage Time
Fall Time
VCC = 6.0 V, IC = 150 mA
IB1 = IB2 = 15 mA
toff
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
500
400
300
200
100
0
0.5
VCE = 5V
β = 10
0.4
125 °C
0.3
25 °C
25 °C
0.2
125 ºC
0.1
- 40 °C
- 40 ºC
0
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
- 40 ºC
25 °C
- 40 ºC
25 °C
125 ºC
125 ºC
= 10
β
V
= 5V
CE
1
10
100
500
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
20
V
= 35V
CB
16
12
8
1
C
ib
0.1
0.01
4
C
ob
0
25
50
75
100
º
125
0.1
1
10
50
TA- AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Switching Times
Turn On and Turn Off Times
vs Collector Current
vs Collector Current
250
500
I
I
c
c
IB1= IB2
=
IB1 = IB2=
10
10
200
150
100
50
400
300
200
100
0
V
= 15 V
V
= 15 V
cc
cc
t
s
t
f
t
r
t
off
t
d
t
on
0
10
100
- COLLECTOR CURRENT (mA)
1000
10
100
- COLLECTOR CURRENT (mA)
1000
I
I
C
C
Rise Time vs Collector
and Turn On Base Currents
Power Dissipation vs
Ambient Temperature
50
1
0.75
0.5
20
10
5
SOT-6
t
= 15 V
r
30 ns
60 ns
0.25
0
2
1
10
100
500
0
25
50
75
100
125
150
I
- COLLECTOR CURRENT (mA)
C
TEMPERATURE (oC)
PNP Multi-Chip General Purpose Amplifier
(continued)
Test Circuits
30 V
200 Ω
1.0 KΩ
0
- 16 V
50 Ω
≤ 200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
- 6.0 V
15 V
1 KΩ
37 Ω
1.0 KΩ
0
- 30 V
50 Ω
≤ 200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
Discr ete P OWER & Sign a l
Tech n ologies
FMB3904
FFB3904
MMPQ3904
B4
E2
B2
C2
E1
E4
B3
E3
C1
B2
E2
C1
B1
E1
C4
C4
C3
C2
B2
B1
E2
C3
C2
pin #1
E1
B1
pin #1
C2
C1
C1
SuperSOT -6
SC70-6
Mark: .1A
SOIC-16
Mark: .1A
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
60
V
V
Collector-Base Voltage
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB3904
FMB3904
MMPQ3904
PD
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
300
2.4
415
700
5.6
180
1,000
8.0
mW
mW/°C
°C/W
°C/W
°C/W
125
240
Each Die
1998 Fairchild Semiconductor Corporation
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0
40
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
I
I
C = 10 µA, IE = 0
E = 10 µA, IC = 0
6.0
V
VCE = 30 V, VEB = 0
VCE = 30 V, VEB = 0
50
50
nA
nA
ICEX
Collector Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
40
70
I
C = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
100
60
30
300
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.2
0.3
0.85
0.95
V
V
V
V
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.65
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
IC = 100 µA, VCE = 5.0 V,
450
2.5
6.0
2.0
MHz
pF
Output Capacitance
Cobo
Cibo
NF
Input Capacitance
pF
Noise Figure (except MMPQ3904)
dB
RS =1.0kΩ, f=10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 3.0 V, VBE = 0.5 V,
IC = 10 mA, IB1 = 1.0 mA
VCC = 3.0 V, IC = 10mA
IB1 = IB2 = 1.0 mA
18
20
ns
ns
ns
ns
td
tr
150
25
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
VCE = 5V
0.15
β
= 10
400
300
200
100
0
125 °C
125 °C
0.1
25 °C
25 °C
0.05
- 40º C
- 40 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
V
= 5V
1
0.8
0.6
0.4
β
= 10
CE
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Capacitance vs
Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
10
500
100
f = 1.0 MHz
VCB= 30V
5
4
10
1
C
ibo
3
2
C
0.1
obo
1
0.1
25
50
75
100
125
150
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
12
12
I
= 1.0 mA
C
R
V CE = 5.0V
I
= 1.0 mA
C
= 200Ω
S
10
8
10
8
I
= 50 µA
= 1.0 kΩ
I
= 5.0 mA
C
S
C
R
I
= 50 µA
C
I
= 0.5 mA
C
R
6
6
= 200Ω
S
I
= 100 µA
4
4
C
2
2
I
= 100 µA, R = 500 Ω
C
S
0
0
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
S
- SOURCE RESISTANCE (
)
kΩ
Power Dissipation vs
Ambient Temperature
Current Gain and Phase Angle
vs Frequency
1
0.75
0.5
50
0
45
40
35
30
25
20
15
10
5
20
40
h fe
SOT-6
60
80
100
120
θ
140
160
180
VCE = 40V
0.25
0
I C = 10 mA
0
1
10
100
1000
0
25
50
75
100
125
150
f - FREQUENCY (MHz)
TEMPERATURE (oC)
Turn-On Time vs Collector Current
Rise Time vs Collector Current
500
500
100
I
c
I
c
IB1= IB2
=
VCC = 40V
IB1= IB2=
10
10
40V
15V
100
T
= 25°C
J
t
@ VCC = 3.0V
r
T
= 125°C
J
2.0V
t
10
5
10
5
@ VCB = 0V
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
C
I
C
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
Fall Time vs Collector Current
500
500
I
I
c
c
IB1= IB2
=
IB1= IB2
=
10
10
T
= 25°C
J
T
= 125°C
VCC = 40V
J
100
100
T
= 125°C
J
T
= 25°C
J
10
5
10
5
1
10
- COLLECTOR CURRENT (mA)
100
1
10
100
I
I
- COLLECTOR CURRENT (mA)
C
C
Test Circuits
3.0 V
275 Ω
300 ns
10.6 V
Duty Cycle
= 2%
10 KΩ
0
C1 < 4.0 pF
- 0.5 V
< 1.0 ns
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
t1
10 < t1
< 500 µs
10.9 V
275 Ω
Duty Cycle
=
2%
0
10 KΩ
C1 < 4.0 pF
1N916
- 9.1 V
< 1.0 ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FMB3906
FFB3906
MMPQ3906
E2
B2
B4
C2
E1
E4
B3
E3
C1
B2
E2
C1
B1
E1
C4
C4
C3
C2
B2
SC70-6
Mark: .2A
B1
E2
C3
C2
pin #1
E1
B1
pin #1
C2
C1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
C1
pin #1
SOIC-16
Mark: MMPQ3906
SuperSOT -6
Mark: .2A
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
40
40
V
V
5.0
V
Collector Current - Continuous
200
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB3904
FMB3904
MMPQ3904
PD
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
300
2.4
415
700
5.6
180
1,000
8.0
mW
mW/°C
°C/W
°C/W
°C/W
125
240
Each Die
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
IC = 1.0 mA, IB = 0
C = 10 µA, IE = 0
40
V
V(BR)CBO
V(BR)EBO
IBL
40
V
V
I
Emitter-Base Breakdown Voltage
Base Cutoff Current
5.0
IE = 10 µA, IC = 0
VCE = 30 V, VBE = 3.0 V
VCE = 30 V, VBE = 3.0 V
50
50
nA
nA
ICEX
Collector Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain *
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
60
80
100
60
300
30
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.25
0.4
0.85
0.95
V
V
V
V
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.65
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
VEB = 0.5 V, IC = 0,
f = 100 kHz
IC = 100 µA, VCE = 5.0 V,
450
3.0
8.0
2.5
MHz
pF
Output Capacitance
Cobo
Cibo
NF
Input Capacitance
pF
Noise Figure (except MMPQ3906)
dB
RS =1.0kΩ, f=10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 3.0 V, VBE = 0.5 V,
IC = 10 mA, IB1 = 1.0 mA
VCC = 3.0 V, IC = 10mA
IB1 = IB2 = 1.0 mA
15
20
ns
ns
ns
ns
td
tr
110
40
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
250
0.3
V
= 1.0V
β = 10
CE
0.25
0.2
125 °C
200
150
100
50
0.15
0.1
0.05
0
25 °C
25 °C
125 ºC
- 40 °C
- 40 ºC
0.1 0.2
0.5
1
2
5
10 20
50 100
1
10
I C - COLLECTOR CURRENT (mA)
100
200
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
β = 10
1
0.8
0.6
0.4
0.2
0
- 40 ºC
- 40 ºC
25 °C
125 ºC
25 °C
125 ºC
V
= 1V
CE
1
10
100
200
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
V
= 25V
10
8
CB
C
obo
6
1
C
4
ibo
0.1
2
0.01
0
0.1
25
50
75
100
125
1
10
T - AMBIENT TEMPERATURE ( C)
º
A
REVERSE BIAS VOLTAGE (V)
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
6
12
VCE = 5.0V
VCE = 5.0V
f = 1.0 kHz
5
4
10
I
= 1.0 mA
C
8
6
4
2
0
3
2
1
0
I
= 100 µA, R = 200Ω
C
S
I
I
= 1.0 mA, R = 200Ω
C
C
S
I
= 100 µA
C
= 100 µA, R = 2.0 kΩ
S
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
- SOURCE RESISTANCE (
kΩ
S
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
500
100
500
100
t
t
s
off
I
c
t
I B1
=
t
on
f
10
t
on
VBE(OFF)= 0.5V
I
10
1
10
1
t
r
I
c
c
t
IB1= IB2
=
IB1= IB2
=
off
10
10
t
d
1
10
100
1
10
100
I
- COLLECTOR CURRENT (mA)
I
- COLLECTOR CURRENT (mA)
C
C
Power Dissipation vs
Ambient Temperature
1
SOIC-16
SOT-6
0.75
0.5
0.25
0
SC70-6
0
25
50
75
100
125
150
TEMPERATURE (ºC)
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Input Impedance
Voltage Feedback Ratio
100
10
V
= 10 V
CE
f = 1.0 kHz
10
1
1
0.1
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Output Admittance
Current Gain
1000
500
1000
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
f = 1.0 kHz
200
100
50
100
20
10
10
0.1
0.1
1
10
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
UHC™
VCX™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Discrete Power
&
Signal Technologies
FMB3946
C2
E1
C1
Package: SuperSOT-6
Device Marking: .002
Note: The " . " (dot) signifies Pin 1
B2
E2
B1
Transistor 1 is NPN device,
transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
This complementary dual device was designed for use as a general purpose amplifier and switch. The useful
dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Process 23
(NPN) and Process 66 (PNP).
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
Value
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Units
Collector-Emitter Voltage
40
V
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
40
V
V
5
200
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ,
T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA
= 25°C unless otherwise noted
Symbol
Characteristics
Max
Units
Total Device Dissipation
Derate above 25°C
700
5.6
mW
mW/°C
PD
Thermal Resistance, Junction to Ambient
180
°C/W
RqJA
ã 1997 Fairchild Semiconductor Corporation
Page 1 of 2
fmb3946.lwpPr23&66(Y2)
NPN & PNP Complementary Dual Transistor
(continued)
Electrical Characteristics TA
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector to Emitter Voltage
Ic = 1.0 mA
40
40
5
V
V
BVCEO
BVCBO
BVEBO
ICBO
Collector to Base Voltage
Emitter to Base Voltage
Collector Cutoff Current
Emitter Cutoff Current
Ic = 10 uA
Ie = 10 uA
Vcb = 30 V
Veb = 4.0 V
V
50
50
nA
nA
IEBO
ON CHARACTERISTICS
DC Current Gain
hFE
Vce = 1V, Ic = 100uA
Vce = 1V, Ic = 1.0mA
Vce = 1V, Ic = 10mA
Vce = 1V, Ic = 50mA
Vce = 1V, Ic = 100mA
40
70
100
60
-
30
Collector-Emitter Saturation Voltage Ic = 10mA, Ib = 1mA
Base-Emitter Saturation Voltage Ic = 10mA, Ib = 1mA
0.25
0.9
V
V
VCE(sat)
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
TYP
Output Capacitance
COB
Vcb = 5V, f = 1MHz
3
pF
pF
Input Capacitance
CIB
Veb = 0.5V, f = 1MHz
7
Current Gain - Bandwidth Product
fT
Vce = 20V, Ic = 10mA, f = 100MHz
450
2.5
MHz
dB
NF Noise Figure
Vce = 5V, Ic = 100uA,
Rs = 1kohms, f = 10Hz to 15.7kHz
SWITCHING CHARACTERISTICS
TYP
Delay Time
td
Vcc = 3V, Vbe = 0.5V,
Ic = 10 mA, Ib1 = 1 mA
18
ns
ns
ns
ns
Rise Time
tr
20
150
40
Storage Time
ts
Vcc = 3V,Ic = 10 mA,
Ib1 = Ib2 = 1 mA
Fall Time
tf
ã 1997 Fairchild Semiconductor Corporation
Page 2 of 2
fmb3946.lwpPr23&66(Y2)
Discr ete P OWER & Sign a l
Tech n ologies
FMBA06
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT -6
Mark: .1G
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
80
80
V
V
4.0
V
Collector Current - Continuous
500
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FMBA06
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
700
5.6
180
mW
mW/°C
°C/W
RθJA
1998 Fairchild Semiconductor Corporation
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)EBO
ICEO
Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0
80
V
V
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
4.0
I
E = 100 µA, IC = 0
VCE = 60 V, IB = 0
VCB = 80 V, IE = 0
0.1
0.1
µA
µA
ICBO
Collector-Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
100
100
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.25
1.2
V
V
VCE(sat)
VBE(on)
IC = 100 mA, VCE = 1.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 2.0 V,
f = 100 MHz
150
MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.5
0.4
0.3
0.2
0.1
0
200
β
= 10
VCE = 1V
125 °C
150
25 °C
125 °C
100
25 °C
- 40 ºC
50
- 40 ºC
0.1
1
10
100
1000
0.001
0.01
0.1
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (A)
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
1
0.8
0.6
0.4
- 40 ºC
0.8
25 °C
- 40 ºC
25 °C
0.6
125 °C
125 °C
0.4
V
= 5V
CE
0.2
0
0.1
1
10
100
1000
1
10
100
1000
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector Saturation Region
Collector-Cutoff Current
vs. Ambient Temperature
2
1.5
1
T
= 25°C
A
10
1
V
= 80 V
CB
0.1
I
=
100 mA
1 mA
10 mA
C
0.5
0
0.01
0.001
25
50
75
100
125
4000
10000
20000
30000
50000
º
TA - AMBIENT TEMPERATURE ( C)
I
- BASE CURRENT (uA)
B
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
Input and Output Capacitance
vs Reverse Voltage
100
10
1
f = 1.0 MHz
117
116
115
114
113
112
111
C
ib
C
ob
0.1
0.1
1
10
100
0.1
1
10
100
1000
V
- COLLECTOR VOLTAGE(V)
CE
RESISTANCE (k
)
Ω
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Gain Bandwidth Product
Power Dissipation vs
Ambient Temperature
vs Collector Current
1
400
V
= 5V
ce
350
300
250
200
150
100
SOT-6
0.75
0.5
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
1
10
20
50
100
I
- COLLECTOR CURRENT (mA)
C
Discrete Power
&
Signal Technologies
FMBA0656
Package: SuperSOT-6
C2
E1
Device Marking: .003
C1
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
B2
E2
B1
NPN & PNP Complementary Dual Transistor
SuperSOT- 6 Surface Mount Package
This device was designed for general purpose amplifier applications at collector currents to 300mA.
Sourced from Process 33 (NPN) and Process 73 (PNP).
Absolute Maximum Ratings
TA
= 25°C unless otherwise noted
Value
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Units
Collector-Emitter Voltage
80
V
Collector-Base Voltage
80
V
V
Emitter-Base Voltage
4
500
Collector Current (continuous)
Power Dissipation @Ta = 25°C*
Storage Temperature Range
Junction Temperature
mA
W
0.7
PD
-55 to +150
150
°C
TSTG
TJ
°C
Thermal Resistance, Junction to Ambient
180
°C/W
RqJA
*Pd total, for both transistors. For each transistor, Pd = 350mW.
Electrical Characteristics
TA
= 25°C unless otherwise noted
Test Conditions
Min
Symbol
BVCEO
BVCBO
BVEBO
Parameter
Max
Units
Collector to Emitter Voltage
Ic = 1.0 mA
80
V
Collector to Base Voltage
Emitter to Base Voltage
Ic = 100 uA
Ie = 100 uA
80
4
V
V
Ó 1997 Fairchild Semiconductor Corporation
Page 1 of 2
fmba0656.lwpPr33&73(Y3)
NPN & PNP Complementary Dual Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Test Conditions
Min
Symbol
ICBO
Parameter
Max
Units
Collector Cutoff Current
Vcb = 80 V
Vce = 60 V
100
nA
Collector Cutoff Current
DC Current Gain
100
nA
-
ICEO
Vce = 1 V, Ic = 10 mA
Vce = 1 V, Ic = 100 mA
100
100
hFE
Collector-Emitter Saturation Voltage Ic = 100 mA, Ib = 10 mA
0.25
1.2
V
V
VCE(sat)
VBE(on)
Base-Emitter On Voltage
Ic = 100 mA, Vce = 1 V
Small - Signal Characteristics
Current Gain - Bandwidth Product
Vce = 1 V, Ic = 100 mA, f = 100 MHz
50
-
fT
Ó 1997 Fairchild Semiconductor Corporation
Page 2 of 2
fmba0656.lwpPr33&73(Y3)
Discr ete P OWER & Sign a l
Tech n ologies
FMBA14
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT -6
Mark: .1N
NPN Multi-Chip Darlington Transistor
This device is designed for applications requiring extremely high current
gain at collector currents to 1.0 A. Sourced from Process 05.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCES
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
30
V
V
V
A
30
10
Collector Current - Continuous
1.2
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FMBA14
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
700
5.6
180
mW
mW/°C
°C/W
RθJA
1998 Fairchild Semiconductor Corporation
NPN Multi-Chip Darlington Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage
30
V
I
C = 100 µA, IB = 0
ICBO
Collector-Cutoff Current
Emitter-Cutoff Current
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
100
100
nA
nA
IEBO
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
10K
20K
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA
1.5
2.0
V
V
VCE(sat)
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 10 V,
f = 100 MHz
200
MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
250
1.6
1.2
0.8
0.4
0
β
= 1000
VCE = 5V
200
150
100
50
125 °C
- 40 ºC
25 °C
25°C
125 ºC
- 40 °C
0
0.001
0.01
0.1
1
1
10
100
1000
IC - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (mA)
Base Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
2
2
1.6
1.2
0.8
0.4
0
β
= 1000
1.6
1.2
0.8
0.4
0
- 40 ºC
- 40 ºC
25 °C
25 °C
125 ºC
125 ºC
VCE= 5V
1
10
100
1000
1
10
100
1000
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
NPN Multi-Chip Darlington Transistor
(continued)
Typical Characteristics (continued)
Collector-Emitter Breakdown
Voltage with Resistance
Collector-Cutoff Current
vs Ambient Temperature
Between Emitter-Base
100
62.5
VCB = 30V
62
61.5
61
10
1
60.5
60
0.1
0.01
59.5
0.1
25
50
75
100
125
1
10
100
1000
TA- AMBIENT TEMPERATURE (ºC)
RESISTANCE (kΩ)
Input and Output Capacitance
vs Reverse Voltage
Gain Bandwidth Product
vs Collector Current
50
40
30
20
10
0
f = 1.0 MHz
V
= 5V
ce
20
10
5
Cib
Cob
2
0.1
1
10
100
1
10
20
50
100 150
V
- COLLECTOR VOLTAGE(V)
IC- COLLECTOR CURRENT (mA)
ce
Power Dissipation vs
Ambient Temperature
1
SOT-6
0.75
0.5
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
Discr ete P OWER & Sign a l
Tech n ologies
FMBA56
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT -6
Mark: .2G
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCES
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
80
80
V
V
4.0
V
Collector Current - Continuous
500
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FMBA56
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
700
5.6
180
mW
mW/°C
°C/W
RθJA
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0
80
V
Voltage*
V(BR)CBO
V(BR)EBO
ICEO
Collector-Base Breakdown Voltage
80
V
V
I
I
C = 100 µA, IE = 0
E = 100 µA, IC = 0
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
4.0
VCE = 60 V, IB = 0
VCB = 80 V, IE = 0
0.1
0.1
µA
µA
ICBO
Collector-Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
100
100
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA
0.25
1.2
V
V
VCE(sat)
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 1.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 100 mA, VCE = 1.0 V,
f = 100 MHz
125
MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
300
0.8
0.6
0.4
0.2
0
VCE = 1V
β = 10
250
200
150
100
50
125 °C
25 °C
25 °C
- 40 ºC
- 40 ºC
125 °C
0.001
0.01
0.1
10
100
I C - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (mA)
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Base Emitter ON Voltage vs
Voltage vs Collector Current
Collector Current
1.2
1.2
β
= 10
1
1
0.8
0.6
0.4
- 40 ºC
0.8
- 40 ºC
25 °C
25 °C
0.6
0.4
0.2
0
125 °C
125 °C
V
= 1V
CE
10
100
1000
0.1
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
Collector Saturation Region
10
10
V
= 60Vz
8
6
4
2
0
T
= 25°C
A
CB
1
I
=
100 mA
1 mA
10 mA
C
0.1
0.01
0.001
25
50
75
100
125
3000
5000
10000
20000 30000
50000
º
TA- AMBIENT TEMPERATURE ( C)
I
- BASE CURRENT (uA)
B
Input and Output Capacitance
vs Reverse Voltage
Gain Bandwidth Product
vs Collector Current
40
30
20
10
f = 1.0 MHz
V
= 5V
CE
100
C
ib
C
ob
0
1
10
20
50
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
V
- COLLECTOR VOLTAGE(V)
CE
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
SOT-6
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
FMKA140
SCHOTTKY POWER RECTIFIER
General Description:
Features:
Schottky Barrier Diodes make use of the rectification effect
of a metal to silicon barrier. They are ideally suited for high
frequency rectification in switching regulators & converters.
This device offers a low forward voltage performance in a
power surface mount package in applications where size and
weight are critical.
• Compact surface mount package with J-bend leads (SMA).
• 1.2 Watt Power Dissipation package.
• 1.0 Ampere, forward voltage less than 600 mv
Ordering:
• 13 inch reel (330 mm); 12 mm Tape; 5,000 units per reel.
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Parameter
Value
Units
Storage Temperature
-65 to +150
OC
OC
V
Maximum Junction Temperature
-65 to +125
Repetitive Peak Reverse Voltage (VRRM
)
40
1.0
30
Average Rectified Forward Current (TL = 120OC)
Surge Non Repetitive Forward Current
(Half wave, single phase, 60 Hz)
A
A
Junction to Case for Thermal Resistance (RØJL
)
9.6
OC/W
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
SMA Package
(DO-214AC)
Top Mark: A140
1
2
Actual Size
Electrical Characteristics
TA = 25OC unless otherwise noted
SYM
CHARACTERISTICS
MIN
MAX
UNITS
TEST CONDITIONS
IR
Reverse Leakage Current
PW 300 us, <2% Duty Cycle
1.0
10
mA
mA
VR = 40 V; Tj = 25OC
VR = 40 V; Tj = 100OC
VF
Forward Voltage
PW 300 us, <2% Duty Cycle
600
mV
IF = 1.0 A; Tj = 25OC
© 1997 Fairchild Semiconductor Corporation
Reverse Leakage Current
vs. Temperature
Forward Voltage
vs. Temperature
5
5
o
2
1
125 C
2
1
25oC
100oC
o
100 C
75oC
25oC
0.1
0.01
0.5
0.1
0.001
0.05
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
5
10
15
20
25
30
35
40
V F - FORWARD VOLTAGE (V)
V R - REVERSE VOLTAGE (V)
Capacitance
vs. Reverse Bias Voltage
130
120
110
100
90
80
70
60
50
40
30
0
5
10
15
20
25
30
35
40
V R - REVERSE BIAS VOLTAGE (V)
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
MIN MAX MIN MAX
Actual Size
DIM (mils) (mils) (mm) (mm)
A
B
C
D
E
F
90
160
79
190
---
50
4
115
180
103
220
---
2.286 2.921
4.064 4.572
2.007 2.616
4.826 5.588
A
1
2
---
---
64
1.270 1.626
0.102 0.203
0.762 1.524
0.152 0.305
B
G
H
I
8
30
6
60
12
D
D
C
I
F
H
G
SMA PACKAGE
PACKAGE CODE = (MA)
Fairchild Semiconductor's Criteria
FMMT449
C
E
B
SuperSOTTM-3
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous. Sourced from Process NB.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
FMMT449
Symbol
Parameter
Units
Collector-Emitter Voltage
30
V
VCEO
Collector-Base Voltage
Emitter-Base Voltage
50
5
V
V
VCBO
VEBO
Collector Current - Continuous
1
2
A
IC
- Peak Pulse Current
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max
Characteristic
Symbol
Units
FMMT449
Total Device Dissipation*
Derate above 25°C
500
4
mW
mW/°C
PD
Thermal Resistance, Junction to Ambient
250
°C/W
RqJA
*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper.
ã
1998Fairchild Semiconducto Corporation
Page 1 of 2
fmmt449.lwpPrNB revA
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
30
50
5
V
V
V
BVCEO
BVCBO
BVEBO
ICBO
IC = 10 mA
IC = 1mA
IE = 100 mA
100
10
nA
uA
VCB = 40 V
VCB = 40 V, Ta=100°C
Emitter Cutoff Current
100
nA
IEBO
VEB = 4V
ON CHARACTERISTICS*
DC Current Gain
hFE
70
100
80
-
IC = 50 mA, VCE = 2V
IC = 500 mA, VCE = 2V
IC = 1A, VCE = 2V
300
IC = 2A, VCE = 2V
40
Collector-Emitter Saturation Voltage
500
1.0
mV
V
VCE(sat)
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 200 mA
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
1.25
1
V
V
VBE(sat)
VBE(on)
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
15
pF
VCB = 10 V, IE = 0, f = 1MHz
Transition Frequency
fT
150
MHz
IC = 50mA,VCE = 10 V, f=100MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
ã
1998Fairchild Semiconducto Corporation
Page 2 of 2
fmmt449.lwpPrNB revA
SuperSOTTM-3 Tape and Reel Data and Package Dimensions
SSOT-3 Packaging
Configuration: Figure 1.0
Packaging Description:
SSOT-3 parts are shipped in tape. The carrier tape is
Customize Label
made from dissipative (carbon filled) polycarbonate
a
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Antistatic Cover Tape
These full reels are individually labeled and placed inside
a
standard intermediate made of recyclable corrugated
brown paper with a Fairchild logo printing. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside
a labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Human Readable
Label
Embossed
Carrier Tape
3P
3P
3P
3P
SSOT-3 Std Packaging Information
Standard
(no flow code)
Packaging Option
D87Z
Packaging type
TNR
TNR
10,000
13"
SSOT-3 Std Unit Orientation
Qty per Reel/Tube/Bag
Reel Size
3,000
7" Dia
Box Dimension (mm)
Max qty per Box
187x107x183 343x343x64
343mm x 342mm x 64mm
Intermediate box for D87Z Option
Human Readable Label
24,000
0.0097
0.1230
30,000
0.0097
0.4150
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Human Readable Label sample
Human Readable
Label
187mm x 107mm x 183mm
SSOT-3 Tape Leader and Trailer
Intermediate Box for Standard Option
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
300mm minimum or
75 empty pockets
500mm minimum or
125 empty pockets
August 1999, Rev. C
SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued
SSOT-3 Embossed Carrier Tape
Configuration: Figure 3.0
P0
P2
D0
D1
T
E1
E2
W
F
Wc
B0
Tc
K0
A0
P1
User Direction of Feed
Dimensions are in millimeter
E1 E2
A0
B0
W
D0
D1
F
P1
P0
K0
T
Wc
Tc
Pkg type
SSOT-3
(8mm)
3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
5.2
+/-0.3
0.06
+/-02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SSOT-3 Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
8mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
July 1999, Rev. C
SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued
SuperSOT -3 (FS PKG Code 32)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0097
September 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
UHC™
VCX™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FMMT549
C
E
B
SuperSOTTM-3 (SOT-23)
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
FMMT549
Symbol
Parameter
Units
Collector-Emitter Voltage
30
V
VCEO
Collector-Base Voltage
Emitter-Base Voltage
35
5
V
V
VCBO
VEBO
Collector Current - Continuous
1
2
A
IC
- Peak Pulse Current
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max
Characteristic
Symbol
Units
FMMT549
Total Device Dissipation*
Derate above 25°C
500
4
mW
mW/°C
PD
Thermal Resistance, Junction to Ambient
250
°C/W
RqJA
*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper.
ã
1998 Fairchild Semiconducto Corporation
Page 1 of 2
fmmt549.lwpPrPB 7/10/98 revB
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
30
35
5
V
V
V
BVCEO
BVCBO
BVEBO
ICBO
IC = 10 mA
IC = 100 mA
IE = 100 mA
100
10
nA
uA
VCB = 30 V
VCB = 30 V, Ta=100°C
Emitter Cutoff Current
100
nA
IEBO
VEB = 4V
ON CHARACTERISTICS*
DC Current Gain
hFE
70
100
80
-
IC = 50 mA, VCE = 2V
IC = 500 mA, VCE = 2V
IC = 1A, VCE = 2V
300
IC = 2A, VCE = 2V
40
Collector-Emitter Saturation Voltage
500
750
mV
mV
VCE(sat)
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 200 mA
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
1.25
1
V
V
VBE(sat)
VBE(on)
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
25
pF
VCB = 10 V, IE = 0, f = 1MHz
Transition Frequency
fT
100
MHz
IC = 100 mA,VCE = 5 V, f=100MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
ã
1998 Fairchild Semiconducto Corporation
Page 2 of 2
fmmt549.lwpPrPB 7/10/98 revB
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Discrete Power & Signal
Technologies
July 1998
FMMT560 / FMMT560A
C
E
B
SuperSOTTM-3 (SOT-23)
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
FMMT560/FMMT560A
Symbol
Parameter
Units
Collector-Emitter Voltage
60
V
VCEO
Collector-Base Voltage
Emitter-Base Voltage
80
5
V
V
VCBO
VEBO
Collector Current - Continuous
2
A
IC
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max
Characteristic
Symbol
Units
FMMT560/FMMT560A
Total Device Dissipation
Thermal Resistance, Junction to Ambient
500
mW
PD
250
°C/W
RqJA
Page 1 of 2
ã 1998 Fairchild Semiconductor Corporation
fmmt560.lwpPrNA 7/1098 RevB
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
60
80
5
V
V
V
BVCEO
BVCBO
BVEBO
ICBO
IC = 10 mA
IC = 100 mA
IE = 100 mA
100
10
nA
uA
VCB = 30 V
VCB = 30 V, TA=100°C
Emitter Cutoff Current
100
nA
IEBO
VEB = 4V
ON CHARACTERISTICS*
DC Current Gain
hFE
70
100
250
80
-
IC = 100 mA, VCE = 2 V
IC=500mA, VCE =2V FMMT560
FMMT560A
300
550
IC = 1 A, VCE = 2 V
40
IC = 2 A, VCE = 2 V
Collector-Emitter Saturation Voltage
300
350
300
1.25
mV
VCE(sat)
IC = 1 A, IB = 100 mA
IC = 2 A, IB=200 mA FMMT560
FMMT560A
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
VBE(sat)
VBE(on)
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
1
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
30
pF
-
VCB = 10 V, IE = 0, f = 1MHz
Transition Frequency
fT
75
IC = 100 mA,VCE = 5 V, f=100MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Page 2 of 2
ã 1998 Fairchild Semiconductor Corporation
fmmt560.lwpPrNA 7/1098 RevB
Discrete Power & Signal
Technologies
July 1998
FMMT660 / FMMT660A
C
E
B
SuperSOTTM-3 (SOT-23)
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
FMMT660/FMMT660A
Symbol
Parameter
Units
Collector-Emitter Voltage
60
V
VCEO
Collector-Base Voltage
Emitter-Base Voltage
80
5
V
V
VCBO
VEBO
Collector Current - Continuous
2
A
IC
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max
Characteristic
Symbol
Units
FMMT660/FMMT660A
Total Device Dissipation
Thermal Resistance, Junction to Ambient
500
mW
PD
250
°C/W
RqJA
ã
1998 Fairchild Semiconductor Corporation
Page 1 of 2
fmmt660.lwpPrPA 7/10/98 RevB
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
60
80
5
V
V
V
BVCEO
BVCBO
BVEBO
ICBO
IC = 10 mA
IC = 100 mA
IE = 100 mA
100
10
nA
uA
VCB = 30 V
VCB = 30 V, TA=100°C
Emitter Cutoff Current
100
nA
IEBO
VEB = 4V
ON CHARACTERISTICS*
DC Current Gain
hFE
70
100
250
80
-
IC = 100 mA, VCE = 2 V
IC=500mA, VCE =2V FMMT660
FMMT660A
300
550
IC = 1 A, VCE = 2 V
40
IC = 2 A, VCE = 2 V
Collector-Emitter Saturation Voltage
300
350
300
1.25
mV
VCE(sat)
IC = 1 A, IB = 100 mA
IC = 2 A, IB=200 mA FMMT660
FMMT660A
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
VBE(sat)
VBE(on)
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
1
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
30
pF
-
VCB = 10 V, IE = 0, f = 1MHz
Transition Frequency
fT
75
IC = 100 mA,VCE = 5 V, f=100MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Page 2 of 2
fmmt660.lwpPrPA 7/10/98 RevB
www.fairchildsemi.com
FMS2701
Temperature and Power Supply Voltage Monitor
Features
Description
• Remote diode temperature sensing
• Ambient (on-chip) temperature sense
• Dual 3.3 volt supply monitoring
• SMBus interface to internal registers
• Status registers
The FMS2701 is a temperature- and voltage-monitoring
device that can be interrogated and controlled through an
SMBus serial interface. Outputs are an analog fan control
voltage, thermal alarm and interrupts.
• Thermal trip output
• Interrupt output
• Fan speed control output
• ACPI Thermal Management compliant
Remote (DIODE+ and DIODE-) and ambient diode temper-
ature sensor inputs are selected in sequence at a 1Hz rate by
a multiplexer that drives an A/D converter. Digitized diode
temperatures are stored in registers. Violation of a program-
mable limit or trip point will set an interrupt register bit and/
or assert a digital output.
Applications
Power supply voltages are monitored through two pins:
VCCAUX3 monitors the power to the FMC2701; VCC3 is a
separate 3.3 volt sense voltage input. AUXRST and RST out-
puts indicate the status of voltage monitoring.
• PCs and Servers, Workstations
• Office Equipment
• Test and Measurement Instruments
Analog output, FAN_SPD can be used as an input to a fan
speed control circuit while THERM, INT and FAN_OFF are
additional digital control outputs.
Power is derived from a +3.3V supply. Package is 16-lead
Quad Small Outline Pack (QSOP).
Block Diagram
VCC3AUX
Aux Reset
AUXRST
Oscillator
INTRST
VCC3
Main Reset
RST
Timing
and Control
MR
Current
Generators
D/A
Register
D/A
Converter
FAN_SPD
DIODE+
DIODE-
Low-pass
Filter
Interrupt
Status
Registers
A/D
Converter
Limit
Comparators
Mux
THERM
DSP
On-chip
Bias &
Diode
Interrupt
Mask
Register
Value & Limit
Registers
ADD
Mask
Gating
SDA
SCL
SMBus
Interface
INT
Internal Bus
GPI
Configuration
Register
FAN_OFF
Lit. No. 600402-001
Rev. 1.0.3
PRELIMINARY INFORMATION describes products that are not in full production at the time of printing. Specifications are based on design goals
and limited characterization. They may change without notice. Contact Fairchild Semiconductor for current information.
PRODUCT SPECIFICATION
FMS2701
Following the A/D converter is a DSP block which averages
digitized temperature over several samples.
Architectural Overview
Overall operation of the FMS2701 is controlled by the
SMBus which sets register values and interrupt masking.
Four sensing inputs are monitored:
Upper and lower temperature limits are loaded into the limit
registers. If a limit is violated, an interrupt is generated. Remote
diode open or short circuit fault condition is also sensed.
1. Remote temperature diode voltage
2. Ambient temperature sensing diode voltage
3. Remote 3.3 volt power supply voltage
4. Local 3.3 volt power supply
Power Supply Voltage Monitors
Two Voltage Monitors operating over a 1.0 to 3.8 volt
supply range, sense VCC3 and VCC3AUX voltages. If
input VCC3 < 2.93 volt or master reset input, MR = L, then
RST= L until 140 msec after sensing the fault condition.
Following comparisons against either preset or programma-
ble thresholds, the following hardware outputs are set:
1. Master reset
2. Auxiliary reset
3. Temperature trip point violated (THERM)
4. Interrupt (INT)
If the FMS2701 supply, VCC3AUX < 2.93 volt, AUXRST = L
until 140 msec. after sensing the fault condition, and the main
reset RST = L until 180 msec. after AUXRST is cleared.
When AUXRST = L, internal reset, INTRST =L. AUXRST
is bi-directional, accepting a hard reset input.
Also set are the following register bits:
1. GPI active (General Purpose Input)
2. Remote Temperature limit exceeded
3. THERM input asserted
SMBus Interface
FMS2701 Registers are accessed through the SMBus inter-
face located at the address 0x2C + n; where n = 0, 1, 2
depending upon the state of ADD, a tri-level input. Within
the FMS2701, registers are accessed through an 8-bit bus.
4. Remote diode fault
Fan Speed control voltage, FAN_SPD is set in the range
0–2.5V by loading the D/A Register through the SMBus.
External THERM = L forces FAN_SPD = 2.5V. A Master
Reset clears the D/A Register.
Addressable Memory
Within the FMS2701, there are three sections of addressable
memory which implement the following functions.
Temperature Channel
There are two temperature sense inputs: one for remote sens-
ing; the other for measuring ambient temperature. Both
inputs utilize the thermal variation of the voltage drop across
a diode, to derive the diode temperature.
Command Register (5 locations)
• Configuration
• Interrupt status
• Interrupt mask
• Interrupt status mirror
• Extended function
Instead of sensing the change in V at one current, which is
D
approximately –2mV/°C, V is sampled at two currents
D
(I
MAX
= 10 and I
= 100 µA) to cancel out common error
MIN
Read only RAM (2 locations)
voltages. Difference voltage between the two currents is
proportional to absolute temperature:
• Company ID
• Revision No.
nkT
q
IMAX
IMIN
∆VD =
ln
Value RAM (13 locations)
• Diode temperature, °C
Where:
• THERM temperature trip points, °C
• INT temperature limits, °C
• Analog output D/A converter
n = PN junction ideality factor, typically 1.0065 for the
Pentium II thermal diode. Nominal diode sensitivity is
199.7 µV/°C.
Write accessible locations have default values that may be
overridden by programming through the SMBus interface.
2
FMS2701
PRODUCT SPECIFICATION
Pin Assignment
1
2
3
4
5
6
7
8
FAN_OFF
MR
16
15
14
13
12
11
10
9
SDA
SCL
AUXRST
GND
INT
ADD/NTESTOUT
GPI
VCC3AUX
VCC3
THERM
DIODE(+)
DIODE(-)
RST
FAN_SPD/NTEST_IN
Pin Descriptions
Pin No.
Reset
7
Pin Name
Type/Value
Pin Function Description
RST
Output
Reset. Output pulse from Main Reset Generator, which
is tripped by either MR =L or Internal Reset or VCC3 <
2.93 V. When active, RST = L and register D
cleared.
is
7-0
3
2
AUXRST
MR
Bi-directional
Input
Auxiliary Reset Input/Output. As an output, AUXRST =
L pulse is triggered by VCC3AUX < 2.93 V. As an input,
AUXRST = L trips Internal Reset. NAND test input,
NTEST_IN is sampled by trailing edge of AUXRST pulse.
Manual Reset. Input to Master Reset Generator. If MR =
L, a master reset cycle is initiated. MR pin has a 20 kΩ
pull-up to VCC3AUX.
Analog I/O
10
DIODE+
Voltage input/
current source
Positive diode sense input. Current source to remote
temperature sensing diode anode and upper voltage
sense input.
9
DIODE-
Voltage input/
current sink
Negative diode sense input. Current sink from remote
temperature sensing diode cathode and lower voltage
sense input.
8
FAN_SPD/NTEST_IN Analog output/
digital input
Fan speed control voltage output/NAND Test Input.
Proportional to the value in register 0x19, output is
0–2.5V. External THERM = L forces a 2.5 volt output. If
NTEST_IN = H, the NAND tree test input is enabled for
ATE.
Serial Port
16
15
13
SDA
Bi-directional
Input
Data. SMBus data to/from FMS2701
Clock. SMBus clock into FMS2701
SCL
ADD/NTEST_OUT
Tri-level
SMBus Address Input/NAND Test Output. Lowest two
bits of serial port address with three states: 00, 01 and
10, corresponding to H, L and Z inputs. If NTEST_IN is
sampled HIGH, the NAND tree test output is enabled.
Digital I/O
11
THERM
I//O (Open drain)
Open drain
Thermal Overload. THERM = L indicates that a
temperature trip point has been exceeded. Input THERM
= L sets the THERM bit in the Interrupt Status Register.
14
INT
System interrupt. INT = L when a voltage, temperature
limit or temperature trip point is violated and bit 1 of the
Configuration Register is set H.
3
PRODUCT SPECIFICATION
FMS2701
Pin No.
Pin Name
Type/Value
Input
Pin Function Description
12
GPI
General Purpose Input. Sets a bit in the interrupt
registers. Assertion polarity is set by the GPI_INV bit.
(default is GPI = H causes interrupt)
1
FAN_OFF
Open Drain Output Fan off request. FAN_OFF reflects the state of the
Configuration Register FAN_OFF bit. FAN_OFF = L is a
request to shut the fan off.
Power and Ground
6
VCC3
+3.3 V Input
Voltage Monitor Input. Voltage monitor input to Main
Reset Generator. If VCC3 drops below 2.93V. a Main
Reset cycle is initiated.
4
5
GND
0 V
Ground. Return for 3.3 volt supply, VCC3AUX.
VCC3AUX
+3.3 V Power
Auxiliary 3.3 volt. Power source for FMS2701. If
VCC3AUX drops below 2.93 volt, an Auxiliary Reset
cycle is initiated.
Addressable Memory
Addressable memory is divided into two sections:
1. Command, consisting of five registers
2. Value RAM, consisting of thirteen locations, of which: eleven are used to store temperature data, limits and trip points;
two are used to store the company ID, version and revision number.
Table 1. Addressable Memory Map
Name
Address
0x40
0x41
0x43
0x4C
0x13
0x14
0x17
0x18
0x19
0x26
0x27
0x37
0x38
0x39
0x3A
0x3E
0x3F
Power-up Value, [7:0]
Configuration Register
Interrupt Status Register
Interrupt Mask Register
Interrupt Status Register Mirror
0x25
0x00
0x00
0x00
0x46
0x64
0x46
0x64
0x00
0x46
0x3C
0x50
0x3C
0x46
0x32
0xFC
0xCn
PTA
PTR
7-0
7-0
7-0
7-0
FTA
FTR
DAC
7-0
TR
TA
7-0
7-0
TRHI
7-0
TRLO
7-0
TAHI
7-0
TALO
7-0
Manufacturer ID
Version, Revision
Register Definitions
Configuration Register (0x40)
BIT#
Name
Type
Description
0
START
R/W
Start Temperature and Voltage Monitoring
0: Standby mode. (INT is not cleared)
1: Run (Power-up default). All limit and trip values should be entered into
FMS2701 registers prior to setting START = 1.
4
FMS2701
PRODUCT SPECIFICATION
BIT#
Name
Type
Description
1
INT_EN
R/W
Interrupt Enable
0: Disabled (Power-up default)
1: Enables the INT output.
2
3
INT_CLR
R/W
Interrupt Clear
0: INT output unaffected.
1: Clears the INT output. Contents of the Interrupt Status Register
preserved. (Power-up default = 1)
TRIP_LOCK
R/(W-once)
Temperature Trip Point Lock
0: THERM trip points set by fixed value registers FTA
7-0
and FTR .
7-0
Writes to programmable registers PTA
(Power-up default = 0)
and PTR are enabled.
7-0
7-0
1: THERM trip points set by values preserved in programmable registers
PTA and PTR , while RST = H.
7-0
7-0
4
5
SOFT_RST
FAN_OFF
R/W
R/W
R/W
Soft Reset
0: Power-up default restored by SOFT_RST cycle.
1: Restore power-up values to the Configuration, Interrupt Status,
Interrupt Status Mirror and Interrupt Mask registers.
Fan Off
0: Set output pin FAN_OFF = L. (fan-off)
1: Set output pin FAN_OFF = Z. (Power-up default, fan-on)
If pin THERM = L, then FAN_OFF = H.
6
7
GPI_INV
Reserved
GPI Polarity Invert
0: GPI input passed to Interrupt registers. (Power-up default)
1: Invert the GPI input passed to Interrupt registers
R/W
Reserved (Default=0)
1
Interrupt Status Register (0x41)
BIT#
Name
ATV
Type
Description
0
R
Ambient Temperature Violation
0: On-chip temperature within limits.
1: On-chip temperature limit violated
1
2
3
4
Reserved
Reserved
Reserved
GPI
R
R
R
R
Reserved for Remote Thermal Diode 2 temp error
Reserved for Remote Thermal Diode 2 fault
Undefined
General Purpose Input Status.
GPI is set according to the following truth table:
GPI pin
GPI_INV
GPI bit
0
1
0
1
0
0
1
1
0
1
1
0
Reading this register will not clear the GPI bit.
5
6
RTV
R
R
Remote Temperature Violation.
0: Remote temperature within limits.
1: Remote temperature limit violated
THERM
THERM input status.
0: THERM input negated. (THERM = H)
1: THERM input asserted. (THERM = L)
5
PRODUCT SPECIFICATION
FMS2701
BIT#
Name
FAULT
Type
Description
7
R
Remote Diode Fault.
0: Diode functional
1: Remote temperature sensing diode short or open circuit.
Note:
1.
Reading this register will clear ATV, RTV THERM and FAULT bits.
Interrupt Mask Register (0x43)
BIT#
Name
Type
Description
0
MSKATV
R/W Mask Ambient Temperature Violation bit.
0: Allow ATV bit to affect INT output.
1: Prohibit ATV bit from affecting the INT output.
1
2
3
4
Reserved
Reserved
Reserved
MSKGPI
R
R
R
Undefined
Undefined
Undefined
R/W Mask GPI bit
0: Allow GPI bit to affect INT output.
1: Prohibit GPI bit from affecting the INT output.
5
6
7
MSKRTV
R/W Mask Remote Temperature Violation bit.
0: Allow RTV bit to affect INT output.
1: Prohibit RTV bit from affecting the INT output.
MSKTHERM
MSKFAULT
R/W Mask THERM bit.
0: Allow THERM bit to affect INT output.
1: Prohibit THERM bit from affecting the INT output.
R/W Mask Remote Fault bit.
0: Allow FAULT bit to affect INT output.
1: Prohibit FAULT bit from affecting the INT output.
Note:
1.
An error that causes continuous interrupts to be generated may be masked using the mask register, until the error can be
alleviated.
1
Interrupt Status Mirror Register (0x4C)
BIT#
Name
MATV
Read/Write
Description
0
R
Mirrored Ambient Temperature Violation
0: On-chip temperature within limits.
1: On-chip temperature limit violated
1
2
3
4
Reserved
Reserved
Reserved
MGPI
R
R
R
R
Reserved for Remote Thermal Diode 2 temp error
Reserved for Remote Thermal Diode 2 fault
Undefined
Mirrored General Purpose Input Status.
MGPI is set according to the following ????? table:
GPI pin
GPI_INV
MGPI
0
1
0
1
0
0
1
1
0
1
1
0
Reading this register will not clear the GPI bit.
5
MRTV
R
Mirrored Remote Temperature Violation.
0: Remote temperature within limits.
1: Remote temperature limit violated
6
FMS2701
PRODUCT SPECIFICATION
BIT#
Name
Read/Write
Description
Mirrored THERM input status.
6
MTHERM
R
0: THERM input negated. (THERM = H)
1: THERM input asserted. (THERM = L)
7
MFAULT
R
Mirrored Remote Diode Fault.
0: Diode functional
1: Remote temperature sensing diode short or open circuit.
Note:
1. Reading this register will clear MATV, MRTV, MTHERM and MFAULT bits.
Extended Function Register (0x15)
BIT#
Name
Type
Description
0
MIT
R
Mask Internal THERM
0: Internally generated THERM affects INT output.
1: Internally generated THERM does not impact INT output.
7–1
-
N/A
Reserved
Value RAM (0x13–0x4A)
Unless stated otherwise, Power-on defaults are not defined,.
Address
Name
PTA
Type
Description
0x13
R/W Programmable Ambient Temperature Automatic Trip Point. If TA
> PTA
7-0
7-0
, then THERM = L. Write access is disabled if the TRIP_LOCK bit in the
7-
0
Configuration Register been set. (default: 46h (70°C)
0x14
PTR
R/W Programmable Remote Thermal Diode Automatic Trip Point. If TR > PTR
7-0
7-
, then THERM = L. Write access is disabled if the TRIP_LOCK bit in the
7-
0
Configuration Register been set. (default: 64h (100°C)
0x17
0x18
0x19
FTA
R
R
Fixed Ambient Temperature Automatic Trip Point. (default: 46h (70°C)
Fixed Remote Thermal Diode Automatic Trip Point. (default: 64h (100°C)
7-0
FTR
7-0
7-0
DAC
R/W D/A Converter Input. Value supplied to D/A converter to generate fan speed
control voltage. (default: 00h)
0x20
0x26
N/A Reserved
TR
R
Remote Thermal Diode Temperature. Temperature output derived from
7-0
remote thermal diode.
0x27
TA
R
Ambient Temperature. Temperature output derived from on-chip thermal
7-0
diode.
0x2B
0x2C
0x37
-
N/A Reserved
-
N/A Reserved
TRHI
R/W Remote Thermal Diode High Temperature Limit. TR
> TRHI will set
7-0
7-0
7-0
the RTV and MRTV bits in the Interrupt and Mirrored Interrupt registers.
0x38
0x39
0x3A
TRLO
R/W Remote Thermal Diode Low Temperature Limit. TR < TRLO will set
7-0
7-0 7-0
the RTV and MRTV bits in the Interrupt and Mirrored Interrupt registers.
TAHI
TALO
R/W Ambient Temperature High Temperature Limit. TA
7-0
> TAHI
7-0
will set the
7-0
ATV and MATV bits in the Interrupt and Mirrored Interrupt registers.
R/W Ambient Temperature Low Temperature Limit. TA < TALO
will set the
7-0
7-0 7-0
ATV and ARTV bits in the Interrupt and Mirrored Interrupt registers.
0x3E
0x3F
MFR
NUM
R
R
Manufacturer ID. Value is FC.
7-0
Version and Revision. NUM
= C, the FMS2701 version number. NUM =
3-0
7-0
7-4
revision number
0x44 – 0x4A
0x4D – 0x53
-
-
N/A Reserved
N/A Reserved
7
PRODUCT SPECIFICATION
FMS2701
Temperature Processor
Functional Description
Remote and ambient thermal diode voltages are processed
by the Temperature Processor which outputs values of
remote and ambient temperature alternately. Inputs are
derived from a remote diode that is connected by two wires
to the input of the processor; and the ambient diode, which is
located on-chip. Output is supplied to the Data Processor
Operation of the FMS2701 is divided into three sections:
• Temperature Processor
• Reset Generators
• Data Processor
which loads the TA and TR registers with the digitized
7-0 7-0
ambient and remote temperatures.
Current
Generators
Remote
PN
Junction
TEMP7-0
A/D
Converter
DSP
RMT_ERROR
Mux
Ambient
PN
Junction
29220
XDIODE
Figure 1. Temperature Processor Block Diagram
Table 2. Temperature/Data Conversion/Format
A multiplexer selects the thermal diode to be sensed. Voltage
of the diode is sensed at two currents:10 and 100 µA. During
the diode sampling interval, the A/D converter digitizes low
and high current samples. DSP averages and subtracts the
samples to output an 8-bit temperature that is updated a rate
greater than 1 Hz. Remote and Ambient diode temperatures
are outputted alternately on the TEMPR[7:0] bus which is
connected to the Data Processor.
Temperature
Digital Output
Binary
Hex
0x7D
0x19
0x01
0x00
0xFF
0xE7
0xC9
+125°C
+25°C
+1.0°C
0°C
0111 1101
0001 1001
0000 0001
0000 0000
1111 1111
1110 0111
1100 1001
Remote Diode fault sensing is included within the DSP
block. If the remote diode voltage indicates either a short or
an open circuit, the RMT_ERROR signal causes the
RMT_FAULT bit to be set in the Interrupt Status Register.
-1.0°C
-25°C
-55°C
Temperature data format is 8-bit, two’s complement with the
LSB equivalent to 1.0°C. Range and conversion between °C
and equivalent binary and hexadecimal data is exemplified in
Table 2.
8
FMS2701
PRODUCT SPECIFICATION
In Figure 2, VCC3AUX<2.93V represents the state of the
VCC3AUX power supply voltage.
Reset Generators
There are two reset generators:
1. Auxiliary Reset
2. Main Reset
AUXRST is a bi-directional pin. AUXRST(OUT) signifies
an outgoing signal. AUXRST(IN) signifies an incoming sig-
nal. Auxiliary Reset is triggered by either of two events:
Auxiliary Reset responds to the power supply voltage,
VCC3AUX applied to the FMS2701. Main Reset responds
to a separate power supply voltage level, VCC3. Threshold
level of both reset generators is 2.93 volt. If 1.0 V < VCC3AUX
< 2.93 both generators output an active L reset level.
1. VCC3AUX < 2.93 volt. After a VCC3AUX < 2.93
transition:
a) AUXRST(OUT) = L, continuing low for 140 msec.
after VCC3AUX > 2.93 volt.
b) INTRST = L, while AUXRST(OUT) = L.
Auxiliary Reset Generator
The Auxillary Reset Generator responds to either a low value
of VCC3AUX by outputting an AUXRST = L pulse and an
internal reset pulse, INTRST; or to an external AUXRST
input by emitting an internal reset. Internal reset restores
power-up register values (except DAC which is cleared by
7-0
RST) and initiates a Master Reset Cycle.
2. AUXRST(IN) = L. In response, INTRST = L,
continuing low until AUXRST(IN) = H
Internal reset, INTRST tracks AUXRST_OUT. To terminate a
reset cycle, VCC3AUX must rise above 2.93 volt. During
power-up, the AUXRST output remains low until the 2.93
volt threshold is reached.
140 mS
VCC3AUX<2.93V
AUXRST(IN)
tDAUXRST
tDVRST
AUXRST(OUT)
tDINTRST
INTRST
Figure 2. Timing Diagram, Auxiliary Reset
Main Reset
Depending upon the source of reset, the Main Reset
Generator outputs either a 140 or a 180 msec. pulse as shown
in Figure 3. VCC3 < 2.9 represents the state of the VCC3
power supply voltage. RST = L clears the D/A Converter
register.
tDMR
MR
tDVR
VCC3<2.9
INTRST
tDIR
140 mS
180 mS
180 mS
RST
Figure 3. Timing Diagram, Main Reset
9
PRODUCT SPECIFICATION
FMS2701
Internal Reset
Data Processor
Internal reset, INTRST originates from the Auxiliary Reset
Generator. When power is supplied to the FMS2701 via
VCC3AUX, output INTRST = L for 140 msec. after
VCC3AUX transitions >2.93 volt. INTRST = L instigates
four events:
Based upon setup commands via the SMBus, the Data Pro-
cessor gathers sensor inputs from the Temperature Processor
and Reset Generators. Temperature inputs are compared
against values stored in the Trip and Limit registers. Fault
conditions set flags in the interrupt registers and activate the
THERM and INT outputs. Temperature and interrupt status
are passed to the host via the SMBus interface. Host com-
mands set the FMS2701 configuration, interrupt masking
and the fan speed.
1. Configuration, Interrupt and Mask registers are reset to
default values.
2. THERM Temperature Trip Point registers: PTA
,
7-0
PTR , FTA , FTR are set to default values.
7-0 7-0 7-0
3. DAC register is set to 0x00.
7-0
4. Temperature Processor and Data Processor are reset.
Trip & Limit
Registers
DAC
7-0
D/A
Converter
Fan Speed
Register
FAN_SPD
THERM
RST
Ambient Error
Remote Error
Remote Fault
TR
TA
7-0
Temperature
Registers
Limit
Corporators
T
7-0
Interrupt
Status
7-0
Registers
Bypass/
Invert
Interrupt
Mask
GPI
Registers
NADD
Test Logic
NTEST_IN
Mask
Gating
Configuration
Registers
INT
INTEST_OUT
ADD/NTEST_OUT
FAN_OFF
ADD
Interface
Test
Registers
Pointer
Register
SCA
SCL
SMBus
Interface
Data Bus
Compare ID
and Version
Registers
MCLK
Master
Oscillator
Timing
and Control
Figure 4. Data Processor Block Diagram
10
FMS2701
PRODUCT SPECIFICATION
SMBus Interface
Two signals comprise the bus: clock (SCL) and bi-direc-
tional data (SDA). When receiving and transmitting data
through the serial interface, the FMS2701 acts as a slave,
responding only to commands by the SMBus master.
FMS2701 register access is via a 2-wire SMBus interface.
Base address is 0x2C + n, where n is an offset defined by the
state of the ADD pin: Z, H, L == 0, 1, 2. (see Table 3) State Z
corresponds to the ADD pin being open circuit.
Data received or transmitted on the SDA line must be stable
for the duration of the positive-going SCL pulse. Data on
SDA may change only when SCL = L. An SDA transition
while SCL = H is interpreted as a start or stop signal.
Table 3. Serial Port Slave Addresses
ADD
Address
2C
Z
H
L
2D
2E
SDA
SCL
tBUFF
tSTAH
tDHO
tDSU
tSTASU
tSTOSU
tDAL
tDAH
24469B
Figure 5. SMBus: Read/Write Timing
SDA
bit 7
bit 6
bit 5
bit 4
bit 3
bit 2
bit 1
bit 0
ACK
SCL
24470B
Figure 6. SMBus: Typical Byte Transfer
SDA
SCL
A6
A5
A4
A3
A2
A1
A0
R/W
ACK
Figure 7. SMBus: Slave Address with Read/Write Bit
11
PRODUCT SPECIFICATION
FMS2701
There are five steps within an SMBus cycle:
A repeated start signal occurs when the master device driv-
ing the serial interface generates a start signal without first
generating a stop signal to terminate the current communica-
tion. This is used to change the mode of communication
(read, write) between the slave and master without releasing
the serial interface lines.
1. Start signal
2. Slave address byte
3. Pointer register address byte
4. Data byte to read or write
5. Stop signal
Serial Interface Read/Write Examples
When the SMBus interface is inactive (SCL = H and SDA = H)
communications are initiated by sending a start signal. The
start signal (Figure 5, left waveform) is a HIGH-to-LOW
transition on SDA while SCL is HIGH. This signal alerts all
slaved devices that a data transfer sequence is imminent.
Examples below show how serial bus cycles can be linked
together for multiple register read and write access cycles.
For sequential register accesses, each ACK handshake ini-
tiates further SCL clock cycles from the master to transfer
the next data byte.
After a start signal, the first eight bits of data that are transferred,
comprise a seven bit slave address followed a single R/W bit
(Read = H, Write = L). As shown in Figure 6, the R/W bit
indicates the direction of data transfer: read from; or write to
the slave device. If the transmitted slave address matches the
address of the FMS2701 which set by the state of the ADD
pin, the FMS2701 acknowledges by pulling SDA LOW on
the 9th SCL pulse (see Figure 7) to send an acknowledge bit,
ACK. If the addresses do not match, the FMS2701 does not
acknowledge.
Write to one control register
1. Start signal
2. Slave Address byte (R/W bit = LOW)
3. Pointer byte
4. Data byte to base address
5. Stop signal
Read from one control register
1. Start signal
2. Slave Address byte (R/W bit = LOW)
3. Pointer byte (= base address)
4. Stop signal
For each byte of data read or written, the MSB is the first bit
of the sequence.
5. Start signal
6. Slave Address byte (R/W bit = HIGH)
7. Data byte from base address
8. Stop signal
DATA TRANSFER
If a slave device such as the FMS2701 does not acknowledge
the master device during a write sequence, SDA remains HIGH
so that the master can generate a stop signal. During a read
sequence, if the master device does not acknowledge (ACK = L),
the FMS2701 interprets this as “end of data.” SDA remains
HIGH so the master can generate a stop signal.
Addressable Memory
Although the FMS2701 will respond to external inputs, con-
trol of the operation of the FMS2701 is through the internal
registers. Following power-up, registers are set to default
values. After a 140 msec. power up reset delay, the FMS2701
will begin checking sensor inputs to determine if the temper-
ature in voltages fall within default limits.
To write data to a specific FMS2701 control register, three
bytes are sent:
1. Write the slave address byte with bit R/W = L.
2. Write the pointer byte.
3. Write to the control register indexed by the pointer.
These default values may be overridden by changing the val-
ues stored in the Value RAM. If the PTA and PTR val-
7-0 7-0
ues are changed, then the TRIP_LOCK (Temperature Trip
Point Lock) bit in the Configuration Register must be set to
enable temperature values to be compared against the pro-
grammable rather than the fixed trip point values. If the tem-
perature limit values are changed, then the changes are
effective immediately. Interrupt masking (register 0x43),
enabling (INT_EN bit) and clearing (INT_CLR bit) can be
used to disable interrupts during register setup.
Data is read from the control registers of the FMS2701 in a
similar manner, except that two data transfer operations are
required:
1. Write the slave address byte with bit R/W = L.
2. Write the pointer byte.
3. Write the slave address byte with bit R/W = H
4. Read the control register indexed by the pointer.
Preceding each slave write, there must be a start cycle. Follow-
ing the pointer byte there should be a stop cycle. After the last
read, there must be a stop cycle comprising a LOW-to-HIGH
transition of SDA while SCL is HIGH. (see Figure 5, right
waveform)
There are four control registers and 21 Value RAM locations,
with functions and bit assignments defined in the Address-
able Memory section.
12
FMS2701
PRODUCT SPECIFICATION
D/A Converter
THERM Processing
An 8-bit D/A converter supplies a voltage to the FAN_SPD
pin which, can be used to control the speed of a fan. Input of
the D/A converter is connected to the DAC register.
7-0
THERM is a bi-directional pin with an open drain output.
When the THERM output is asserted L, the THERM input is
disabled. Figure 8 depicts the logical flow of the internal and
external THERM signals, showing the origins and destinations.
DAC value is loaded from the SMBus. In the event of a
7-0
THERM condition, the DAC output remains unchanged
7-0
but the D/A converter output is set full scale, equivalent to
DAC = 0xFF. RST = L clears DAC in the fan speed
7-0
7-0
register.
INTRSTb
Interrupt
Status
Register
Mirror
TEMPVALID
THERM
PTR
XTHERM
7-0
Programmable
Trip Point
PTA70-
Registers
FRY
7-0
ITHERM
THERM
HOT
7-0
FTR
FTA
7-0
7-0
Fixed Trip
Point
Interrupt
Status
Comparators
Other
Interrupts
Registers
Register
THERM
Interrupt
OR-gate
Mask
Interrupt
Mask
INT
ITHERM
Restore
MSKTHERM
Gating
Register
TRIPLOCK
TR[7:0]
TA[7:0]
Configuration
Register
FAN_OFF
DACFF==THERM
D/A
D/A
FAN_SPD
RST
Register
Converter
Figure 8. THERM I/O Structure/Detail
As an input, if THERM = L the following events occur:
3. If Configuration Register bit, TRIPLOCK = L and Fixed
Ambient Temperature Automatic Trip Point FTA is
7-0
exceeded.
1. If the mask bit, MSKTHERM = L, output pin, INT = L
2. Configuration Register bit, FAN_ON = H.
3. Output pin, FAN_SPD = 2.5 V for maximum fan speed
but register DAC is unchanged.
7-0
4. Interrupt Status Register bit, THERM = H.
4. If Configuration Register bit, TRIPLOCK = L and Fixed
Remote Temperature Automatic Trip Point
FTR is exceeded.
7-0
5. Interrupt Status Register Mirror bit, MTHERM = H.
TRIPLOCK is Temperature Trip Point Lock bit in the
Configuration Register.
As an output, ITHERM = H, causes THERM = L; ITHERM
= L, causes THERM = Z, open drain. ITHERM = H, if any
of the following conditions occur:
After a Trip Point has been exceeded, to restore the open
drain output, THERM = Z, the temperature must fall 5°C
below the trip point.
1. If Configuration Register bit, TRIPLOCK = H and
Programmable Ambient Temperature Automatic Trip
Point PTA is exceeded.
7-0
2. If Configuration Register bit, TRIPLOCK = H and
Programmable Remote Temperature Automatic Trip
Point PTR is exceeded.
7-0
13
PRODUCT SPECIFICATION
FMS2701
INT Processing
INT =L, if any bit in the Interrupt Register is active. Other-
wise INT = Z, open drain. Figure 9 depicts the logical flow
of the interrupt sources to the INT output.
INT is a hardware interrupt output. INT operation is con-
trolled by the Configuration Register bits: INT_EN and
INT_CLR bits, which enable and clear the open drain INT
output. Subject to the setting of the Interrupt Mask Register,
THERM
XTHERM
ITHERM
INT
Interrupt
Status
ATV, RTV
ITHERM
Register
Interrupt
Interrupt
OR-gate
Control
GPI, THERM,
RMT_FAULT
Interrupt
Status
Mask
Gating
Interrupt
Sources
Register
Interrupt
Mask
Interrupt
Status
Register
Register
Mirror
INT_EN
INT
INT_CLR
Configuration
Register
INT_RST
SOFT_RST
Figure 9. INT Output Structure
With Configuration Register bits INT_EN = 1 and INT_CLR
= 0, output pin INT = L, if any of the following bits are set in
the Interrupt Register:
5. RMT_FAULT: Remote diode is either open or short circuit.
Output pin INT = Z, clearing the interrupt output, if any of
the following events occur:
1. ATV: An ambient temperature limit is violated indicating
that the on-chip temperature falls outside the boundaries
1. Interrupt Status Register is read, causing this register to
be cleared to the default state.
established by TALO and TAHI
.
7-0 7-0
2. GPI: General Purpose Input, GPI is asserted. Polarity
of the GPI pin is determined by the setting of the
GPI_INVT bit in the Configuration Register.
3. RTV: A remote thermal diode temperature limit is vio-
lated, indicating that the temperature falls outside the
2. Configuration Register bit INT_CLR = 1, which is the
default condition following an internal reset.
3. Configuration Register bit INT_EN = 0, which is the
default condition following an internal reset.
boundaries established by TRLO and TRHI
4. THERM: Temperature exceeds an selected automatic
.
Status of the INT_CLR and INT_EN bits does not impact the
contents of the Interrupt Status or the Interrupt Status Mirror
Registers. Reading the Interrupt Status Registers clears only
that register. Reading the Interrupt Status Mirror Register,
clears only that register.
7-0 7-0
trip point (PTA , PTR , FTA , or FTR ) causing
7-0 7-0 7-0 7-0
output THERM = L or the THERM input = L even if the
THERM bit in the Interrupt Register is masked.
14
FMS2701
PRODUCT SPECIFICATION
Note that setting the INT output by exceeding a temperature
limit is an edge-driven event. Only when the temperature
actually crosses the limit boundary does INT\ transition LOW.
An example of interrupts caused by a series of temperature,
T transitions across temperature limits is shown in Figure 10.
Temperature limits are fixed for the first series of temperature
excursions. Then, for the second series, following the THI1
violation, the THI limit is raised from THI1 to THI2. If THI
is reprogrammed from a value above T to a value below THI,
then an interrupt is generated. INT is cleared by reading the
Interrupt Status Register (ISRread).
THI2
THI3
THI1
TLO1
TLO2
T
ISRread
INT
Figure 10. Profile of Temperature Driven Interrupts
ATV and RTV bits operate in conjunction with the INT
output and Interrupt status Register as follows:
that are stored in the Limit Registers. Out of range TA and
7-0
TR values set the INT bit in the Interrupt Status Register.
7-0
1. When the temperature exceeds a high limit, the corre-
sponding Interrupt Status Register bit, either ATV or
RTV is set.
TR and TA are also compared with the values in Trip
7-0 7-0
Point Registers, PTA and PTR if these registers have
7-0 7-0
been loaded or FTA and FTR , which contain power up
7-0 7-0
2. Reading the Interrupt Status Register clears ATV and RTV.
3. Once the high limit has been exceeded, a subsequent
transitions through the high level will not cause an
interrupt, unless:
default values. If a trip point is violated, two outputs are
asserted: THERM = L and FAN_SPD = H.
Mask Gating
a) The temperature passes through the low limit.
b) Or, the high temperature limit is changed.
4. If the high temperature limit is changed from a level
above the temperature to a level below, then the relevant
Interrupt Status Register bit, either ATV or RTV is set.
5. If the temperature falls below a low limit, the corre-
sponding Interrupt Status Register bit, either ATV or
RTV is set.
Setting the corresponding bit in the Interrupt Mask Register
can mask any bit in the Interrupt Status Register.
Timing and Control
Timing and Control logic generates a master clock and
orchestrates on-chip timing.
NAND Gate Test
6. Once the low limit has been exceeded, a subsequent
transitions through the low level will not cause an inter-
rupt, unless:
a) The temperature passes through the high limit.
b) Or, the low temperature limit is changed.
7. If the low temperature limit is changed from a level
below the ambient/remote temperature to a level above,
then the ATV/RTV bit is set.
A selectable NAND tree test is provided for Automated Test
Equipment (ATE) board level connectivity testing. NAND
tree test mode is enabled by setting the input pin, FAN_SPD
NTEST_IN = H, while the AUXRST output transitions L to H,
causing the output of a D flip-flop to:
1. Enable the NAND tree output, connecting it to the
ADD/NTEST_OUT pin.
2. Disable the D/A converter output to the FAN/SPD
NTEST_IN.
GPI—General Purpose Input
GPI is a General Purpose Input that can be used to trigger an
interrupt. Configuration Register bit GPI_INVT determines
the polarity of the GPI input. Interrupt Register bit, GPI = H
sets output INT = L if Mask Register bit MSK_GPI = L.
To perform a NAND tree test, NAND tree pins should be
driven high.
Each pin is toggled in turn to generate an output pattern with
values that can be verified against those shown in Table 4.
Limit and Trip Point Comparators
Temperature register outputs, TR and TA are compared
7-0 7-0
with the limit values TRHI , TRLO , TAHI and TALO
7-0 7-0 7-0 7-0
15
PRODUCT SPECIFICATION
FMS2701
NTEST_IN
NTEST_EN
INTRST
GPI
SCL
SDA
MR
NTEST_OUT
Figure 11. NAND Tree Test Logic
To implement the NAND-TREE test on a PWB, no pins
listed in the tree should be connected directly to power or
ground. Instead, pins should be biased through a low load
resistor with a value of 1.0 k to 100 k to allow ATE to drive
pins high/low.
Table 4. NAND Tree Truth Table
GPI
0
SCL
SDA
MR
0
ADD/NTESTOUT
0
0
0
1
1
0
0
1
1
1
1
0
1
0
1
0
1
0
1
0
1
1
1
16
FMS2701
PRODUCT SPECIFICATION
Equivalent Circuits
VCC3AUX
VDD
DIODE+
DIODE–
Digital
Input
GND
29233
GND
27014B
Figure 14. Equivalent Remote Diode Interface Circuit
Figure 12. Equivalent Digital Input Circuit
VDD
VDD
Digital
Output
p
n
Digital
Output
n
GND
29232
Figure 15. Equivalent Open Drain Output Circuit
GND
27011B
Figure 13. Equivalent Digital and D/A Output Circuit
17
PRODUCT SPECIFICATION
FMS2701
Absolute Maximum Ratings (beyond which the device may be damaged)1
Parameter
Min
Typ
Max
Unit
Power Supply Voltages
V
V
(Measured to GND)
(Measured to GND)
-0.5
3.3
3.3
5.75
V
V
CC3AUX
CC3AUX
Digital Inputs
3.3 V logic applied voltage (Measured to GND)2
Forced current3, 4
-0.3
-5.0
V
V
V
+ 0.3
+ 0.5
+ 0.5
V
CC3AUX
5.0
mA
Analog Inputs
Applied Voltage (Measured to GND)2
Forced current3, 4
-0.5
V
CC3AUX
10.0
-10.0
mA
Digital Outputs
3.3 V logic applied voltage (Measured to GND)2
Forced current3, 4
-0.5
V
DD3AUX
10.0
1
-10.0
mA
Short circuit duration (single output in HIGH state to ground)
Temperature
second
Operating, Ambient
-40
-65
125
150
300
220
150
±150
°C
°C
°C
°C
°C
V
Junction
Lead Soldering (10 seconds)
Vapor Phase Soldering (1 minute)
Storage
Electrostatic Discharge5
Notes:
1. Functional operation under any of these conditions is NOT implied. Performance and reliability are guaranteed only
if Operating Conditions are not exceeded.
2. Applied voltage must be current limited to specified range.
3. Forcing voltage must be limited to specified range.
4. Current is specified as conventional current flowing into the device.
5. EIAJ test method.
Operating Conditions
Parameter
Min
Nom
Max
Units
V
V
Digital Power Supply Voltage
Ambient Temperature, Still Air
3.3
CC3AUX
TA
-40
125
°C
18
FMS2701
PRODUCT SPECIFICATION
Electrical Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Power Supply Currents
I
3.3 volt current
Operating
1
2
mA
mA
VCC3AUX
Standby
0.5
Digital Inputs/Outputs
C
C
Input Capacitance
5
10
+1
pF
pF
µA
µA
µA
V
I
Output Capacitance
Input Current, HIGH
Input Current, LOW
10
O
I
I
I
-1
0.005
0.005
200
IH
IL
Input Current, LOW, Master Reset
Input Voltage
MR = L
ILR
V
2.0
IH
IL
V
Input Voltage
0.8
100
-2
V
I
I
I
Output Current, HIGH, open drain
Output Current, HIGH
Output Current, LOW
Output Voltage, HIGH
Output Voltage, LOW
-0.1
µA
mA
mA
V
OZH
OH
OL
Other / FAN_OFF
3 / 6
V
OH
V
OL
I
I
= max.
= max.
2.4
2.1
OH
OL
0.4
V
SMBus I/O
V
V
V
Input Voltage, HIGH
Input Voltage, LOW
Output Voltage, LOW
Output Current, HIGH
Output Voltage, LOW
V
V
SMIH
SMIL
0.8
0.4
-100
4
I
= max.
V
SMOL
SMOH
SMOL
SMOL
I
I
-0.1
µA
mA
Diode Inputs
I
I
Source Current, High
Source Current, Low
80
8
100
10
120
12
µA
µA
DH
DL
Analog Output
V
V
Output Voltage, high
Output Voltage, low
Output Current , source
Output Current , sink
DAC
DAC
= 0xFF
2.5
0
V
V
AH
AL
7-0
= 0xOO
7-0
I
I
2
mA
mA
AH
AL
1
Switching Characteristics
Parameter
Conditions Min Typ1 Max Unit
Digital Inputs
t
t
t
Delay, GPI input to register
DGPI
Delay THERM input to register
Delay, NAND input to NTEST_OUT
THERM
NAND
Reset Generators
t
t
t
Delay, V
CC3AUX
< 2.93 V to AUXRST output
ns
DVA
Pulsewidth, AUXRST after V
> 2.93 V
< 2.93 V to RST\ output
140
500
ms
ns
WVA
DVAR
CC3AUX
Delay, V
CC3AUX
19
PRODUCT SPECIFICATION
FMS2701
Parameter
Conditions Min Typ1 Max Unit
t
t
t
t
t
t
Delay, input AUXRST ↓ to RST\ output
ns
DAR
WAR
DR
Pulsewidth, RST after V
> 2.93 V or AUXRST ↓
180
180
140
500
500
500
ms
ns
CC3AUX
Delay, MR ↓ to RST = L
Pulsewidth, MR ↑ to RST = H
Delay, V < 2.93 V to RST output
ms
ns
WR
DVR
DVW
CC3
Pulsewidth, RST after V
> 2.93 V
ms
CC3
SMBus Interface
t
t
t
t
t
t
t
t
SCL Pulse Width, LOW
SCL Pulse Width, HIGH
SDA Start Hold Time
4.7
4.0
4.0
4.0
4.7
4.7
250
300
µs
µs
µs
µs
µs
µs
ns
ns
DAL
DAH
STAH
STASU
STOSU
BUFF
DSU
SCL to SDA Setup Time (Stop)
SCL to SDA Setup Time (Start)
SDA Stop Hold Time Setup
SDA to SCL Data Setup Time
SDA to SCL Data Hold Time
DHO
Notes:
1. ↓ is a H to L transition.
2. ↑ is a L to H transition.
System Performance Characteristics
Parameter
Conditions
Min
Typ1
Max
Unit
Temperature Channel
Remote Accuracy
-40°C ≤ T ≤ +125°C
±5
±3
±5
±3
°C
°C
°C
°C
A
+60°C ≤ T ≤ +100°C
A
Ambient Accuracy
0°C ≤ T ≤ +85°C
A
20°C ≤ T ≤ +50°C
A
A/D Converter
E
E
Error, Total Unadjusted
Differential Linearity Error
Power Supply Sensitivity
Total Monitoring Cycle Time
±1
±1
±1
1.0
%
TUADC
LDADC
LSB
%/V
Sec.
PSS
t
Remote and Ambient samples
1.4
C
D/A Converter Output
E
E
V
Error, Total Unadjusted
Differential Linearity Error
Threshold Voltage
-3
-1
+3
+1
%
LSB
V
TUDAC
LDDAC
RES
2.93
Notes:
1. Values shown in Typ column are typical for V
= 3.3V and T = 25°C.
A
cc3AUX5
20
FMS2701
PRODUCT SPECIFICATION
Input pin MR and bi-directional pins AUXRST and THERM,
Application Information
should be biased to V
CC3AUX
through a pull-up resistor to
Since the FMS2701 is intended to be embedded on a Pen-
tium motherboard, external connections cannot be specifi-
cally defined. Although in Figure 16, only the schematic
symbol and power supply connections are shown, there are
several guidelines that should be adopted.
prevent spurious triggering.
If unused, GPI shold be connected to ground through a pull-
down resistor, unless the bit: GPI_INV = H, in which case GPI
should be connected to V
CC3AUX
through a pull-up resistor.
Power is supplied to the V
CC3AUX
pin which should be de-
The FAN_SPD/INTESTOUT pin should be biased to ground
through a pull-down resistor to ensure that the NAND Test is
not inadvertently enabled.
coupled to ground through a local 0.1 µF chip capacitor. To
minimize the effects of noise, locate the FMS2701 over a
ground plane.
SMBus pins SCL SDA require pull-up resistors along the bus
which are not necessarily local to the FMS2701. ADD must
be set H, L or open to match the FMS2701 address to the
assigned SMBus address.
Cleanly route the DIODE± analog traces as a pair over the
ground plane. Segregate DIODE± traces from digital traces
and areas of noise. Sensitivity to noise is approiximately
1°C/200µV.
V
must be maintained at 3.3 volts to avoid tripping the
CC3
Main Reset Generator. If V
is not used, connect it to
CC3
V
.
CC3AUX
VCC3AUX
JP1
C1
0.1
R1
10K 10K
R2
R3
10K
U1
R4
R5
10K
10K
2
6
1
FAN_OFFb
MRb
VCC3
MR
VCC3
FAN_OFF
3
7
AUXRSTb
RSTb
AUXRST
RST
9
10
CATHODE
ANODE
REMOTE_DIODE–
REMOTE_DIODE+
8
FAN_SDP
FAN_SPD
12
GPI
GPI
11
14
THERM
INT
THERMb
INTb
13
15
16
ADD
SCL
SDA
SCL
SDA
10K
JP2
FMS2701
Figure 16. FMS2701 Reference Schematic
21
PRODUCT SPECIFICATION
FMS2701
Pin Assignments
16-lead QSOP Package
Inches
Millimeters
Symbol
Notes
Min.
Max.
Min.
Max.
A
.061
.004
.008
.007
.189
.150
.068
.010
.012
.010
.196
.157
1.55
0.10
0.20
0.18
4.80
3.81
1.73
0.25
0.30
0.25
4.98
3.99
A1
B
C
D
E
e
.025 BSC
0.63 BSC
H
K
.230
–
.244
–
5.84
–
6.19
–
L
φ
.016
0°
.035
8°
0.41
0°
0.89
8°
16
9
C
L
E
H
1
8
φ
D
K
A
e
B
A1
22
FMS2701
PRODUCT SPECIFICATION
Notes
23
PRODUCT SPECIFICATION
FMS2701
Ordering Information
Product Number
Temperature Range
-40°C to 125°C
Screening
Package
Package Marking
FMS2701QSC
Commercial
16 Lead QSOP
2701QS
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
7/8/99 0.0m 003
Stock#DS30002701
1998 Fairchild Semiconductor Corporation
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