首页 |元器件品牌

FP10W90HVX2 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-247 ; 晶体管| MOSFET | N沟道| 900V V（ BR ） DSS | 10A I（ D） | TO- 247\n
FP10W90HVX2
型号： FP10W90HVX2
厂家： ETC    ETC
描述：

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-247
晶体管| MOSFET | N沟道| 900V V（ BR ） DSS | 10A I（ D） | TO- 247\n

晶体 晶体管 开关 脉冲 局域网
文件： 总12页 (文件大小：340K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SHINDENGEN  
HVX-2 Series Power MOSFET  
N-Channel Enhancement type  
OUTLINE DIMENSIONS  
2SK2677  
(FP10W90HVX2)  
Case : ITO-3P  
(Unit : mm)  
900V 10A  
FEATURES  
Input capacitance (Ciss) is small.  
Especially, input capacitance  
at 0 biass is small.  
The static Rds(on) is small.  
The switching time is fast.  
Avalanche resistance guaranteed.  
APPLICATION  
Switching power supply of AC 240V input  
High voltage power supply  
Inverter  
RATINGS  
œAbsolute Maximum Ratings iTc = 25Žj  
Item  
Symbol  
Tstg  
Tch  
Conditions  
Ratings  
Unit  
Storage Temperature  
-55`150  
150  
900  
}30  
10  
Ž
Channel Temperature  
Drain-Source Voltage  
VDSS  
VGSS  
ID  
V
A
Gate-Source Voltage  
Continuous Drain CurrentiDCj  
Continuous Drain CurrentiPeak)  
Continuous Source CurrentiDCj  
Total Power Dissipation  
Repetitive Avalanche Current  
Single Avalanche Energy  
Repetitive Avalanche Energy  
Dielectric Strength  
IDP  
Pulse widthꢀ10Ês, Duty cycleꢀ1/100  
20  
IS  
10  
65  
PT  
IAR  
W
0
Tch = 150Ž  
1
A
EAS  
EAR  
Vdis  
Tch = 25Ž  
260  
26  
mJ  
Tch = 25Ž  
Terminals to case,@AC 1 minute  
2
0.8  
kV  
N¥m  
Mounting Torque  
TOR i Recommended torque F0.5 N¥m j  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  
2SK2677 ( FP10W90HVX2 )  
HVX-2 Series Power MOSFET  
œElectrical Characteristics Tc = 25Ž  
Item  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
Forward Tran“conductance  
V(BR)DSS ID = 1mA, VGS = 0V  
900  
V
ÊA  
IDSS  
IGSS  
gfs  
VDS = 900V, VGS = 0V  
VGS = }30V, VDS = 0V  
ID = 5A, VDS = 10V  
250  
}0.1  
4.8  
2.5  
8.0  
1.05 1.4  
S
V
Static Drain-Source On-“tate Resistance RDS(ON) ID = 5A, VGS = 10V  
Gate Threshold Voltage  
Source-Drain Diode Forward Voltage  
Thermal Resistance  
VTH  
VSD  
ID = 1mA, VDS = 10V  
IS = 5A, VGS = 0V  
3.0  
3.5  
1.5  
Æjc junction to case  
1.92 Ž/v  
Total Gate Charge  
Qg  
Ciss  
Crss  
Coss  
ton  
VDD = 400V, VGS = 10V, ID = 10A  
90  
2150  
50  
nC  
Input Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Turn-On Time  
VDS = 25V, VGS = 0V, f = 1MHZ  
pF  
210  
ID = 5A, RL = 30, VGS = 10V  
140 250  
440 740  
ns  
Turn-Off Time  
toff  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  
2SK2677  
Transfer Characteristics  
20  
15  
10  
5
Tc = - 55°C  
25°C  
100°C  
150°C  
V
DS  
= 25V  
TYP  
0
0
5
10  
15  
20  
Gate-Source Voltage VGS [V]  
2SK2677 Static Drain-Source On-state Resistance  
100  
10  
I = 5.0A  
D
1
0.1  
V
GS  
= 10V  
pulse test  
TYP  
0.01  
-50  
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2677  
Gate Threshold Voltage  
6
5
4
3
2
1
0
V
= 10V  
DS  
I = 1mA  
D
TYP  
-50  
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2677  
Safe Operating Area  
100  
10  
100ms  
200ms  
1
R
DS(ON)  
1ms  
limit  
10ms  
DC  
0.1  
Tc = 25°C  
Single Pulse  
0.01  
1
10  
100  
1000  
Drain-Source Voltage VDS [V]  
C ° / W ] j c q ( t ) [  
T r a n s i e n t T h e r m a l I m p e d  
2SK2677 Single Avalanche Energy Derating  
100  
80  
60  
40  
20  
0
0
50  
100  
150  
Starting Channel Temperature Tch [°C]  
2SK2677  
Capacitance  
10000  
1000  
100  
10  
Ciss  
Coss  
Crss  
f=1MHz  
Ta=25°C  
TYP  
1
0
20  
40  
60  
80  
100  
Drain-Source Voltage VDS [V]  
A S  
[ A ]  
S i n g l e A v a l a n c h e C u r r e n t I  
2SK2677  
Power Derating  
100  
80  
60  
40  
20  
0
0
50  
100  
150  
Case Temperature Tc [°C]  
2SK2677  
Gate Charge Characteristics  
500  
400  
300  
200  
100  
0
20  
15  
10  
5
V
DS  
V
GS  
V
DD  
= 400V  
200V  
100V  
I = 10A  
D
TYP  
0
0
50  
100  
150  
Gate Charge Qg [nC]  

相关型号：

FP11

 Sealed Ultra Miniature Pushbutton Switches
CK-COMPONENTS

FP11000G

 Fixed Resistor, Metal Oxide Film, 1W, 100ohm, 500V, 2% +/-Tol, 150ppm/Cel, Through Hole Mount, AXIAL LEADED
VISHAY

FP11002K

 RESISTOR, METAL OXIDE FILM, 1W, 10%, 150ppm, 10000ohm, THROUGH HOLE MOUNT, AXIAL LEADED
VISHAY

FP11003K

 RESISTOR, METAL OXIDE FILM, 1 W, 10 %, 150 ppm, 100000 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
VISHAY

FP11004F

 RESISTOR, METAL OXIDE FILM, 1 W, 1 %, 150 ppm, 1000000 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
VISHAY

FP11004G

 RESISTOR, METAL OXIDE FILM, 1W, 2%, 150ppm, 1000000ohm, THROUGH HOLE MOUNT, AXIAL LEADED
VISHAY

FP1100A

 SILICON SURGE SUPPRESSOR DIODES
ETC

FP1100KF

 RESISTOR, METAL OXIDE FILM, 1 W, 1 %, 150 ppm, 100000 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
VISHAY

FP1100RJ

 RESISTOR, METAL OXIDE FILM, 1 W, 5 %, 150 ppm, 100 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
VISHAY

FP11050F

 RESISTOR, METAL OXIDE FILM, 1 W, 1 %, 150 ppm, 105 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
VISHAY

FP11052F

 RESISTOR, METAL OXIDE FILM, 1 W, 1 %, 150 ppm, 10500 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
VISHAY

FP11053F

 RESISTOR, METAL OXIDE FILM, 1 W, 1 %, 150 ppm, 105000 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
VISHAY
©2020 ICPDF网 联系我们和版权申明