FS0102BN [ETC]
Sensitive Gate SCRs ; 敏感栅可控硅\n
| 型号： | FS0102BN |
| 厂家： | 
ETC |
| 描述： | Sensitive Gate SCRs
|
| 文件： | 总4页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FS01...N
SURFACE MOUNT SCR
SOT223
(Plastic)
On-State Current
0.8 Amp
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 600 V
These series of Silicon Controlled
Rectifiers uses a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required using surface mount
technology.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
On-state Current
CONDITIONS
Min.
Max.
Unit
All Conduction Angle, Ttab = 70 ºC
0.8
0.5
8
A
A
IT(RMS)
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Half Cycle, Q = 180 º, Ttab = 70 ºC
IT(AV)
ITSM
ITSM
I2t
VGRM
IGM
PGM
PG(AV)
Tj
Tstg
Tsld
Half Cycle, 60 Hz, T
Half Cycle, 50 Hz, T
tp = 10ms, Half Cycle
GR = 10 µA
j
= 25 ºC
A
j
= 25 ºC
7
A
A2s
0.24
8
Peak Reverse Gate Voltage
Peak Gate Current
I
V
1
A
20 µs max.
20 µs max.
20ms max.
Peak Gate Dissipation
Gate Dissipation
2
W
W
ºC
ºC
ºC
0.1
Operating Temperature
Storage Temperature
-40
-40
+125
+150
260
Soldering Temperature
1.6 mm from case, 10s max.
SYMBOL
PARAMETER
CONDITIONS
VOLTAGE
Unit
V
B
D
M
RGK = 1 KW
Repetitive Peak Off State
Voltage
VDRM
VRRM
200
400
600
Jul - 02
FS01...N
SURFACE MOUNT SCR
Electrical Characteristics
Unit
SYMBOL
PARAMETER
CONDITIONS
SENSITIVITY
01 02 03 04 11 18
MIN
µA
µA
1
20 15
4
0.5
5
IGT
Gate Trigger Current
VD = 12 VDC , RL = 140W, Tj = 25 ºC
MAX
20 200 200 50 25
VD = VDRM , RGK = 1KW, Tj = 125 ºC MAX
100
1
IDRM / IRRM
Off-State Leakage Current
VR = VRRM
,
Tj = 25 ºC
MAX
MAX
MAX
MAX
MAX
MIN
V
V
1.95
0.95
600
0.8
VTM
VT(O)
rd
at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC
Tj = 125 ºC
On-state Voltage
On-state Threshold Voltage
Dinamic Resistance
Gate Trigger Voltage
mW
V
Tj = 125 ºC
VGT
VD = 12 VDC , RL = 140W, Tj = 25 ºC
0.1
Gate Non Trigger Voltage VD = VDRM , RL = 3.3KW,
V
VGD
RGK = 1KW,
Tj = 125 ºC
Holding Current
mA
mA
MAX
MAX
MIN
IH
IL
IT = 50 mA , RGK = 1KW, Tj = 25 ºC
IG = 1 mA, RGK = 1KW, Tj = 25 ºC
5
6
Latching Current
V/µs
VD = 0.67 x VDRM , RGK = 1KW,
Tj = 125 ºC
dv / dt
Critical Rate of Voltage
Rise
75 75 100 80 80 75
IG = 2 x IGT
MIN
Critical Rate of Current Rise
Tr £ 100 ns, F = 60 Hz,
A/µs
di / dt
50
Tj = 125 ºC
80
ºC/W
ºC/W
Rth(j-l)
Rth(j-a)
Thermal Resistance
Junction-Leads for DC
150
Thermal Resistance
Junction-Ambient
PART NUMBER INFORMATION
F
S
01
01
B
N
00 RB
FAGOR
SCR
PACKAGING
FORMING
CASE
VOLTAGE
CURRENT
SENSITIVITY
Jul - 02
FS01...N
SURFACE MOUNT SCR
Fig. 1: Maximum average power dissipation
versus average on-state current
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and T tab).
P (W)
1
P (W)
T tab (ºC)
-95
1
0.8
0.6
0.4
0.2
0
360 º
-100
-105
-110
-115
-120
-125
0.8
a
Rth (j-a)
DC
0.6
a = 180 º
a = 120 º
0.4
a = 90 º
a = 60 º
0.2
I
(A)
T(AV)
a = 30 º
Tamb (ºC)
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
20
40
60
80
100 120 140
Fig. 3: Average on-state current versus tab
temperature
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
I
(A)
Zth(j-a) / Rth(j-a)
T(AV)
1
0.8
0.6
0.4
0.2
0
1.00
DC
0.10
a = 180 º
Standard foot print,
e (Cu) = 35 µm
tp (s)
Ttab (ºC)
60 80
0.01
0
20
40
100 120 140
1E-3
1E-2
1E-1
1E+0 1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
Igt (Tj)
Ih (Tj)
I
(A)
TSM
Igt (Tj = 25 ºC)
Ih (Tj = 25 ºC)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
8
7
6
5
4
3
2
1
0
Tj initial = 25 ºC
Igt
Ih
Number of cycles
Tj (ºC)
-40 -20
0
20 40 60 80 100 120 140
1
10
100
1,000
Jul - 02
FS01...N
SURFACE MOUNT SCR
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp £ 10 ms, and corresponding value of I2t.
Fig. 8: On-state characteristics (maximum
values).
Fig. 9: Relative variation of holding
current versus gate-cathode resistance
(typical values).
Ih(Rgk)
Ih(Rgk = 1kW)
(A). I2t (A2s)
I
(A)
I
TM
TSM
10
5.0
100
10
1
Tj = 25 ºC
Tj initial = 25 ºC
Tj initial
25 ºC
I
TSM
Tj max
1.0
1
Tj max
Vto = 0.95V
Rt = 0.600W
I2
t
V
(V)
TM
Rgk (W)
tp(ms)
0.1
0.1
0.1
1.0E+00 1.0E+01 1.0E+02
1.0E+03 1.0E+04 1.0E+05
1.0E+06
1
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
A
B
DIMENSIONS
16º max. (4x)
C
REF.
Milimeters
Typ.
6.50
10º max.
K
Min.
6.30
6.70
3.30
-
Max.
6.70
7.30
3.70
-
H
A
B
C
D
E
F
G
H
I
J
E
I
7.00
3.50
4.60
2.30
3.00
0.70
1.60
0.60
D
F
-
-
2.95
0.65
1.50
0.50
-
3.15
0.85
1.70
0.70
0.05
0.35
0.02
0.30
J
K
G
0.25
Weight: 0.11 g
FOOT PRINT
3.3
1.5
6.4
(3x) 1
2.3
1.5
4.6
Jul - 02
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