关闭背景特效

FS10ASJ06 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252 ; 晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 10A I（ D） | TO- 252\n

FS10ASJ06


元器件型号：	FS10ASJ06
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 10A I(D) \| TO-252 晶体管\| MOSFET \| N沟道\| 60V V（ BR ） DSS \| 10A I（ D） \| TO- 252\n 晶体晶体管
PDF文件：	总4页 (文件大小：201K)
下载文档：	下载PDF数据表文档文件
型号参数：FS10ASJ06参数

FS10ASJ-06

HIGH-SPEED SWITCHING USE

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29 MITSUBISHI

FS10ASJ-06

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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32 POWEREX

FS10ASJ-06

MITSUBISHI Nch POWER MOSFET

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11 RENESAS

FS10ASJ-06F

High-Speed Switching Use Nch Power MOS FET

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16 RENESAS

FS10ASJ2

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-252

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39 ETC

FS10ASJ-2

HIGH-SPEED SWITCHING USE

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58 MITSUBISHI

FS10ASJ-2

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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23 POWEREX

FS10ASJ-2

High-Speed Switching Use Nch Power MOS FET

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13 RENESAS

FS10ASJ-2-T1

Power Field-Effect Transistor, 10A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 MITSUBISHI

FS10ASJ-2-T13

High-Speed Switching Use Nch Power MOS FET

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10 RENESAS

FS10ASJ-2-T2

Power Field-Effect Transistor, 10A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 MITSUBISHI

FS10ASJ3

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-252

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63 ETC

FS10ASJ-3

HIGH-SPEED SWITCHING USE

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40 MITSUBISHI

FS10ASJ-3

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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52 POWEREX

FS10ASJ-3

High-Speed Switching Use Nch Power MOS FET

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12 RENESAS

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