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FS5KM-9A

更新时间：2024-09-18 03:09:41
品牌：ETC
描述：TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-220FN

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FS5KM-9A 概述

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-220FN 晶体管| MOSFET | N沟道| 450V V（ BR ） DSS | 5A I（ D） | TO- 220FN\n

FS5KM-9A 数据手册

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MITSUBISHI Nch POWER MOSFET  
FS5KM-9A  
HIGH-SPEED SWITCHING USE  
FS5KM-9A  
OUTLINE DRAWING  
Dimensions in mm  
10 0.3  
2.8 0.2  
φ 3.2 0.2  
1.1 0.2  
1.1 0.2  
0.75 0.15  
2.54 0.25  
0.75 0.15  
2.54 0.25  
➀ ➁ ➂  
➁
➀
➁
➂
GATE  
DRAIN  
SOURCE  
➀
ꢀ 10V DRIVE  
ꢀ VDSS ............................................................................... 450V  
ꢀ rDS (ON) (MAX) ................................................................ 1.2Ω  
ꢀ ID ........................................................................................... 5A  
➂
TO-220FN  
APPLICATION  
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
450  
30  
V
5
A
IDM  
Drain current (Pulsed)  
Avalanche current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Isolation voltage  
15  
5
A
IDA  
L = 200µH  
A
PD  
30  
W
°C  
°C  
V
Tch  
–55 ~ +150  
–55 ~ +150  
2000  
Tstg  
Viso  
—
AC for 1minute, Terminal to case  
Typical value  
Weight  
2.0  
g
Sep. 2001  
MITSUBISHI Nch POWER MOSFET  
FS5KM-9A  
HIGH-SPEED SWITCHING USE  
ELECTRICAL CHARACTERISTICS (Tch = 25°C)  
Symbol Parameter  
Limits  
Unit  
Test conditions  
Min.  
450  
30  
—
Typ.  
—
Max.  
—
ID = 1mA, VGS = 0V  
V
V
(BR) DSS Drain-source breakdown voltage  
(BR) GSS Gate-source breakdown voltage  
V
V
IGS = 100µA, VDS = 0V  
—
—
VGS = 25V, VDS = 0V  
IGSS  
Gate-source leakage current  
—
10  
µA  
mA  
V
IDSS  
Drain-source leakage current VDS = 450V, VGS = 0V  
—
—
1
ID = 1mA, VDS = 10V  
ID = 2A, VGS = 10V  
VGS (th)  
rDS (ON)  
VDS (ON)  
yfs  
Ciss  
Gate-source threshold voltage  
Drain-source on-state resistance  
2.5  
—
3.0  
0.93  
1.86  
4.5  
650  
70  
3.5  
1.20  
2.40  
—
Ω
V
Drain-source on-state voltage ID = 2A, VGS = 10V  
—
ID = 2A, VDS = 10V  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
2.7  
—
S
—
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 25V, VGS = 0V, f = 1MHz  
Coss  
—
—
Crss  
—
15  
—
td (on)  
tr  
—
15  
—
—
15  
—
VDD = 200V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω  
td (off)  
tf  
Turn-off delay time  
Fall time  
—
80  
—
—
30  
—
VSD  
Source-drain voltage  
Thermal resistance  
IS = 2A, VGS = 0V  
Channel to case  
—
1.5  
—
2.0  
4.16  
Rth (ch-c)  
—
°C/W  
PERFORMANCE CURVES  
POWER DISSIPATION DERATING CURVE  
MAXIMUM SAFE OPERATING AREA  
3
2
50  
40  
30  
20  
10  
0
tw =  
10µs  
101  
7
5
100µs  
3
2
1ms  
100  
7
5
10ms  
3
2
DC  
10–1  
7
5
T
C
= 25°C  
Single Pulse  
3
2
0
50  
100  
150  
200  
2
3
5 7101  
2
3
5 7102  
2
3
5 7  
CASE TEMPERATURE  
TC  
(°C)  
DRAIN-SOURCE VOLTAGE VDS (V)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
20  
16  
12  
8
10  
8
VGS = 20V,10V,8V  
6V  
T
C
= 25°C  
Pulse Test  
V
GS = 20V,10V,8V  
TC  
= 25°C  
Pulse Test  
6
6V  
5V  
4
5V  
4
2
P
D
= 30W  
20  
DS (V)  
P
D
= 30W  
0
0
0
10  
20  
30  
40  
50  
0
4
8
12  
16  
DRAIN-SOURCE VOLTAGE  
V
DS (V)  
DRAIN-SOURCE VOLTAGE  
V
Sep. 2001  
MITSUBISHI Nch POWER MOSFET  
FS5KM-9A  
HIGH-SPEED SWITCHING USE  
ON-STATE VOLTAGE VS.  
GATE-SOURCE VOLTAGE  
(TYPICAL)  
ON-STATE RESISTANCE VS.  
DRAIN CURRENT  
(TYPICAL)  
40  
32  
24  
16  
8
5.0  
4.0  
3.0  
2.0  
1.0  
0
T
C
= 25°C  
T
C
= 25°C  
Pulse Test  
Pulse Test  
VGS = 10V  
ID = 10A  
20V  
7A  
5A  
3A  
0
0
4
8
12  
16  
20  
10–1 2 3 5 7 100 2 3 5 7101 2 3 5 7102  
GATE-SOURCE VOLTAGE  
VGS (V)  
DRAIN CURRENT (A)  
ID  
FORWARD TRANSFER ADMITTANCE  
VS. DRAIN CURRENT  
(TYPICAL)  
TRANSFER CHARACTERISTICS  
(TYPICAL)  
10  
8
101  
7
125°C  
75°C  
5
TC = 25°C  
3
2
6
100  
7
4
5
T
V
C
= 25°C  
V
DS = 10V  
3
2
DS = 10V  
2
Pulse Test  
Pulse Test  
0
10–1  
0
4
8
12  
16  
20  
10–1  
2
3
5
7
100  
2
3
5 7  
101  
GATE-SOURCE VOLTAGE  
VGS (V)  
DRAIN CURRENT ID (A)  
CAPACITANCE VS.  
DRAIN-SOURCE VOLTAGE  
(TYPICAL)  
SWITCHING CHARACTERISTICS  
(TYPICAL)  
2
3
5
Tch = 25°C  
10  
VGS = 10V  
3
2
Ciss  
7
5
V
DD = 200V  
R
GEN = RGS = 50  
Ω
3
2
td(off)  
102  
7
2
10  
7
5
5
Coss  
Crss  
tf  
3
2
3
2
t
d(on)  
1
10  
tr  
7
5
Tch = 25°C  
GS = 0V  
f = 1MHz  
101  
7
5
V
3
2
2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3  
2
3
5
7
100  
2
3
5 7  
101  
10–1  
DRAIN-SOURCE VOLTAGE DS (V)  
V
DRAIN CURRENT  
ID (A)  
Sep. 2001  
MITSUBISHI Nch POWER MOSFET  
FS5KM-9A  
HIGH-SPEED SWITCHING USE  
GATE-SOURCE VOLTAGE  
VS. GATE CHARGE  
(TYPICAL)  
SOURCE-DRAIN DIODE  
FORWARD CHARACTERISTICS  
(TYPICAL)  
20  
16  
12  
8
20  
16  
12  
8
400V  
200V  
TC  
= 125°C  
75°C  
VDS = 100V  
25°C  
4
4
T
C
h = 25°C  
V
GS = 0V  
ID  
= 5A  
Pulse Test  
0
0
0
8
16  
24  
32  
40  
0
1.6  
2.4  
3.2  
4.0  
0.8  
GATE CHARGE  
Qg  
(nC)  
SOURCE-DRAIN VOLTAGE V  
SD (V)  
ON-STATE RESISTANCE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
THRESHOLD VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
101  
7
5.0  
4.0  
3.0  
2.0  
1.0  
0
V
DS = 10V  
= 1mA  
V
GS = 10V  
= 2A  
Pulse Test  
ID  
ID  
5
3
2
100  
7
5
3
2
10–1  
–50  
0
50  
100  
150  
–50  
0
50  
100  
150  
CHANNEL TEMPERATURE Tch (°C)  
CHANNEL TEMPERATURE Tch (°C)  
BREAKDOWN VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTICS  
101  
7
5
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
I
GS = 0V  
D = 1mA  
D = 1.0  
3
2
= 0.5  
= 0.2  
= 0.1  
100  
7
5
3
2
P
DM  
= 0.05  
= 0.02  
= 0.01  
Single Pulse  
10–1  
tw  
7
5
T
tw  
D
=
3
2
T
10–2  
–50  
0
50  
100  
150  
10  
–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102  
CHANNEL TEMPERATURE Tch (°C)  
PULSE WIDTH tw (s)  
Sep. 2001  

FS5KM-9A 相关器件

型号 制造商 描述 价格 文档
FS5KM06 ETC TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SOT-186 获取价格
FS5KM10 ETC TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | SOT-186 获取价格
FS5KM14A ETC TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 5A I(D) | SOT-186 获取价格
FS5KM16A ETC TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | SOT-186 获取价格
FS5KM18A ETC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5A I(D) | SOT-186 获取价格
FS5KM2 ETC TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | SOT-186 获取价格
FS5KM3 ETC TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | SOT-186 获取价格
FS5KM5 ETC TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 5A I(D) | SOT-186 获取价格
FS5KM6 ETC TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 5A I(D) | SOT-186 获取价格
FS5KM9 ETC TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | SOT-186 获取价格

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