FSGJ160D1 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | TO-254AA ; 晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 70A I（ D） | TO- 254AA\n
| 型号： | FSGJ160D1 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | TO-254AA
|
| 文件： | 总7页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FSGJ160R
Data Sheet
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFET
Features
• 70A (Current Limited by Package), 100V, r
• UIS Rated
= 0.0115Ω
DS(ON)
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
TM
• Total Dose
developed for high performance
applications in a commercial or
- Meets Pre-Rad Specifications to 100 krad (Si)
military space environment.
Star*Power MOSFETs offer the system designer both
• Single Event
- Safe Operating Area Curve for Single Event Effects
extremely low r
and Gate Charge allowing the
DS(ON)
2
- SEE Immunity for LET of 82MeV/mg/cm with
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100 krads while maintaining the
guaranteed performance for SEE (Single Event Effects)
which the Fairchild FS families have always featured.
V
up to 80% of Rated Breakdown
DS
• Dose Rate
- Typically Survives 3E9 Rad (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
The Fairchild family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
- 9nA Per-Rad (Si)/s Typically
• Neutron
- Maintain Pre-Rad Specifications
for 3E13 Neutrons/cm
r
while exhibiting SEE capability at full rated voltage
2
DS(ON)
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
2
- Usable to 3E14 Neutrons/cm
Symbol
D
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
G
S
Packaging
TO-254AA
G
S
D
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45227W.
Ordering Information
CAUTION: Beryllia Warning per MIL-PRF-19500
refer to package specifications.
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K
Engineering Samples FSGJ160D1
100K
100K
TXV
FSGJ160R3
FSGJ160R4
Space
Star*Power™ is a trademark of Fairchild Americas Inc.
FSGJ160R Rev. B
©2001 Fairchild Semiconductor Corporation
FSGJ160R
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
FSGJ160R
100
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
DS
Drain to Gate Voltage (R
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
100
GS
DGR
Continuous Drain Current
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
70 (Note)
61
A
A
A
V
C
D
D
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
200
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±30
GS
Maximum Power Dissipation
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
192
77
W
W
C
T
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
T
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.54
170
W/ C
Single Pulsed Avalanche Current, L = 100µH (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . I
A
A
A
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
70
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
200
SM
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
300
C
J
STG
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(Distance >0.063in (1.6mm) from Case, 10s Max)
C
L
Weight (Typical)
9.3 (Typical)
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: Current is limited by the package capability.
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 1mA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Drain to Source Breakdown Voltage
Gate Threshold Voltage
I
100
-
DSS
D
GS
o
V
V
I
= V
DS
,
T
T
T
T
T
T
T
= -55 C
-
-
5.5
4.5
-
V
GS(TH)
GS
= 1mA
C
C
C
C
C
C
C
o
D
= 25 C
2.0
-
V
o
= 125 C
1.0
-
-
V
o
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
V
V
= 80V,
DS
= 25 C
-
25
µA
µA
nA
nA
V
DSS
= 0V
o
GS
= 125 C
-
-
250
100
200
0.840
0.0115
0.021
35
o
I
V
= ±30V
= 25 C
-
-
GSS
GS
o
= 125 C
-
-
Drain to Source On-State Voltage
Drain to Source On Resistance
V
V
= 12V, I = 70A
-
-
DS(ON)
GS
D
o
r
I
V
= 61A,
T
T
= 25 C
-
0.0095
Ω
DS(ON)12
D
C
C
= 12V
o
GS
= 125 C
-
-
-
Ω
Turn-On Delay Time
Rise Time
t
V
R
R
= 50V, I = 70A,
-
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
d(ON)
DD
D
= 0.71Ω, V = 12V,
L
GS
t
-
-
140
60
r
= 2.35Ω
GS
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
-
-
20
f
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Q
V
= 0V to 12V
50V < V
< 80V,
-
125
35
45
200
12
7
150
45
g(12)
GS
DD
= 70A
I
D
Q
-
gs
gd
Q
-
55
Q
V
V
= 0V to 20V
= 0V to 2V
-
-
g(20)
g(TH)
GS
Q
-
-
GS
V
I
= 70A, V
= 15V
-
-
(PLATEAU)
D
DS
= 25V, V = 0V,
GS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
V
-
5600
1650
65
-
-
pF
pF
pF
ISS
DS
f = 1MHz
C
-
-
OSS
RSS
C
-
-
o
Thermal Resistance Junction to Case
R
-
0.65
C/W
JC
θ
©2001 Fairchild Semiconductor Corporation
FSGJ160R Rev. B
FSGJ160R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.2
290
-
UNITS
V
V
I
I
= 70A
-
-
-
-
-
SD
SD
Reverse Recovery Time
Reverse Recovery Charge
t
= 70A, dI /dt = 100A/µs
ns
rr
SD
SD
Q
1.8
µC
RR
o
Electrical Specifications up to 100 krad T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
SYMBOL
BV
TEST CONDITIONS
= 0, I = 1mA
MIN
MAX
-
UNITS
(Note 4)
V
V
V
V
V
V
100
V
V
DSS
GS(TH)
GS
GS
GS
GS
GS
GS
D
(Note 4)
V
= V , I = 1mA
DS
2.0
4.5
D
(Notes 3, 4)
(Note 4)
I
= ±30V, V
= 0V
-
-
-
-
100
25
nA
µA
V
GSS
DS
= 80V
Zero Gate Leakage
I
= 0, V
DS
DSS
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
(Notes 2, 4)
(Notes 2, 4)
V
= 12V, I = 70A
0.840
0.0115
DS(ON)
D
r
= 12V, I = 61A
Ω
DS(ON)12
D
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
.
DSS
GS
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
(NOTE 6)
APPLIED
(NOTE 7)
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
V
BIAS
MAXIMUM
GS
(V)
TEST
SYMBOL
V
BIAS (V)
100
100
50
DS
Single Event Effects Safe Operating Area
SEESOA
37
60
60
82
82
36
32
32
28
28
-10
-5
-8
0
80
-5
50
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
2
o
5. Fluence = 1E5 ions/cm (Typical), T = 25 C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves Unless Otherwise Specified
2
LET = 37MeV/mg/cm , RANGE = 36µ
2
LET = 60MeV/mg/cm , RANGE = 32µ
120
100
80
60
40
20
0
2
LET = 82MeV/mg/cm , RANGE = 28µ
120
100
80
60
40
20
0
LET = 37
2
FLUENCE = 1E5 IONS/cm (TYPICAL)
LET = 82
LET = 60
0
4
8
12
16
20
24
28
32
0
-2
-4
-6
(V)
-8
-10
-12
NEGATIVE V
BIAS (V)
GS
V
GS
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURV E
©2001 Fairchild Semiconductor Corporation
FSGJ160R Rev. B
FSGJ160R
Performance Curves Unless Otherwise Specified (Continued)
100
90
1E-3
80
70
1E-4
ILM = 10A
60
50
30A
1E-5
100A
40
30
20
10
0
300A
1E-6
1E-7
-50
0
50
100
o
150
10
30
100
300
1000
T
, CASE TEMPERATURE ( C)
DRAIN SUPPLY (V)
C
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
AS
500
o
25 C
100
12V
Q
G
100µs
10
Q
Q
GD
GS
1ms
OPERATION IN THIS
AREA MAY BE
V
G
10ms
LIMITED BY r
DS(ON)
1
1
10
100
500
CHARGE
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
FIGURE 5. FORWARD BIAS SAFE OPERATING ARE A
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
300
V
V
V
V
V
= 14V
= 12V
= 10V
= 8V
GS
GS
GS
GS
GS
PULSE DURATION = 250ms, V
GS
= 12V, I = 61A
D
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
= 6V
V
= 6V
GS
0
0
2
4
6
8
10
-80
-40
0
40
80
120
160
o
V
, DRAIN TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
DS
J
FIGURE 7. TYPICAL NORMALIZED r
TEMPERATURE
vs JUNCTION
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
DS(ON)
©2001 Fairchild Semiconductor Corporation
FSGJ160R Rev. B
FSGJ160R
Performance Curves Unless Otherwise Specified (Continued)
1
10
0
10
0.5
0.2
-1
-2
-3
0.1
10
10
10
0.05
0.02
0.01
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t /t
1
2
t
1
PEAK T = P
x Z
+ T
t
2
J
DM
θJC
C
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
300
o
STARTING T = 25 C
J
100
o
STARTING T = 150 C
J
10
IF R = 0
t
= (L) (I ) / (1.3 RATED BV
- V
)
AV
IF R ≠ 0
= (L/R) ln [(I *R) / (1.3 RATED BV
AS
DSS
DD
t
- V ) + 1]
DD
AV
AS
DSS
1
0.01
0.1
1
10
t
, TIME IN AVALANCHE (ms)
AV
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I IS REACHED
AS
V
DS
L
+
I
-
BV
DSS
CURRENT
TRANSFORMER
AS
t
P
V
DS
I
AS
V
VARY t TO OBTAIN
DD
P
+
50Ω
REQUIRED PEAK I
AS
V
DD
V
≤ 20V
GS
-
50V-150V
DUT
50Ω
t
P
0V
t
AV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
FSGJ160R Rev. B
FSGJ160R
Test Circuits and Waveforms (Continued)
t
ON
t
V
OFF
t
d(OFF)
DD
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
V
DS
V
= 12V
GS
10%
10%
DUT
0V
90%
50%
R
GS
50%
V
GS
PULSE WIDTH
10%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUI T
FIGURE 14. RESISTIVE SWITCHING WAVEFORM S
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
o
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T = 25 C, Unless Otherwise Specified
C
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
SYMBOL
TEST CONDITIONS
= ±30V
MAX
UNITS
nA
I
V
V
±20 (Note 7)
±25 (Note 7)
±20% (Note 8)
±20% (Note 8)
GSS
GS
I
= 80% Rated Value
o
µA
DSS
DS
r
T
= 25 C at Rated I
D
Ω
DS(ON)
C
V
I
= 1.0mA
V
GS(TH)
D
8. Or 100% of Initial Reading (whichever is greater).
9. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
= 20V, L = 0.1mH; Limit = 170A
Unclamped Inductive Switching
Thermal Response
Gate Stress
V
= 20V, L = 0.1mH; Limit = 170A
V
GS(PEAK)
GS(PEAK)
t
= 100ms; V = 25V; I = 4A; LIMIT = 100mV
t
= 100ms; V = 25V; I = 4A; LIMIT = 100mV
H
H
H
H
H
H
V
= 45V, t = 250µs
V
= 45V, t = 250µs
GS
GS
Pind
Optional
Required
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25 C)
Pre Burn-In Tests (Note 9)
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25 C)
o
o
Steady State Gate
Bias (Gate Stress)
MIL-PRF-750, Method 1042, Condition B
MIL-PRF-750, Method 1042, Condition B
V
= 80% of Rated Value,
V
= 80% of Rated Value,
GS
= 150 C, Time = 48 hours
GS
T = 150 C, Time = 48 hours
A
o
o
T
A
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-PRF-750, Method 1042, Condition A
MIL-PRF-750, Method 1042, Condition A
V
= 80% of Rated Value,
V
= 80% of Rated Value,
DS
= 150 C, Time = 160 hours
DS
T = 150 C, Time = 240 hours
A
o
o
T
A
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-PRF-19500, Group A, Subgroup 2
MIL-PRF-19500, Group A,
Subgroups 2 and 3
NOTE:
10. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
SOA
∆V
TEST CONDITIONS
= 80V, t = 10ms
MAX
3.75
200
UNITS
A
Safe Operating Area
Thermal Impedance
V
DS
= 500ms; V = 25V; I = 4A
t
mV
SD
H
H
H
©2001 Fairchild Semiconductor Corporation
FSGJ160R Rev. B
FSGJ160R
Rad Hard Data Packages - Fairchild Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
D. Group A
E. Group B
- Attributes Data Sheet
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group C
G. Group D
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- X-Ray and X-Ray Report
- Attributes Data Sheet
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
- Pre and Post Rad Read and Record Data
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
- Attributes Data Sheet
- Pre and Post Radiation Data
©2001 Fairchild Semiconductor Corporation
FSGJ160R Rev. B
相关型号：
FSGL033D1
Power Field-Effect Transistor, 12A I(D), 30V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
INFINEON
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