FSPL130R3 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF ; 晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 12A I（ D） | TO- 205AF\n
| 型号： | FSPL130R3 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF
|
| 文件： | 总7页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FSPL130R, FSPL130F
Data Sheet
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
• 12A (Current Limited by Package), 100V, r
= 0.075Ω
DS(ON)
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
• UIS Rated
TM
• Total Dose
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
- Meets Pre-Rad Specifications to 100 krad (Si)
- Rated to 300 krad (Si)
system designer both extremely low r
and Gate
DS(ON)
• Single Event
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300 krads
while maintaining the guaranteed performance for Single
Event Effects (SEE) which the Fairchild FS families have
always featured.
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
up to 100% of Rated Breakdown and
of 5V Off-Bias
DS
V
GS
• Dose Rate
- Typically Survives 3E9 rad (Si)/s at 80% BV
DSS
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
Star*Power Gold products. Star*Power FETs are optimized
- 1.5nA Per-rad (Si)/s Typically
for total dose and r
performance while exhibiting SEE
DS(ON)
• Neutron
capability at full rated voltage up to an LET of 37. Star*Power
Gold FETs have been optimized for SEE and Gate Charge
providing SEE performance to 80% of the rated voltage for
an LET of 82 with extremely low gate charge characteristics.
- Maintain Pre-Rad Specifications
for 3E13 Neutrons/cm
2
2
- Usable to 3E14 Neutrons/cm
Symbol
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
D
G
S
Packaging
TO-205AF
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45212W.
Ordering Information
G
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
D
S
10K
Engineering Samples FSPL130D1
100K
100K
300K
300K
TXV
Space
TXV
FSPL130R3
FSPL130R4
FSPL130F3
FSPL130F4
Space
©2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
FSPL130R, FSPL130F
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
FSPL130R, FSPL130F
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
100
100
V
V
DS
Drain to Gate Voltage (R
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
GS
Continuous Drain Current
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
12 (Note)
A
A
A
V
C
D
D
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
9
C
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
48
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±30
GS
Maximum Power Dissipation
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
P
25
10
W
W
C
T
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH (See Test Figure). . . . . . . . . . . . . . . . . . . . I
0.20
48
W/ C
A
A
A
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
12
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
48
SM
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
300
C
J
STG
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(Distance >0.063in (1.6mm) from Case, 10s Max)
C
L
Weight (Typical)
1.0 (Typical)
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: Current is limited by the package capability.
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 1mA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Drain to Source Breakdown Voltage
Gate Threshold Voltage
I
100
-
DSS
D
GS
o
V
V
I
= V
,
T
T
T
T
T
T
T
= -55 C
-
-
5.5
4.5
-
V
GS(TH)
GS
= 1mA
DS
C
C
C
C
C
C
C
o
D
= 25 C
2.0
-
V
o
= 125 C
1.0
-
-
V
o
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
V
V
= 80V,
DS
= 25 C
-
25
250
100
200
0.912
0.075
0.118
20
50
35
30
40
13
12
-
µA
µA
nA
nA
V
DSS
= 0V
o
GS
= 125 C
-
-
o
I
V
= ±30V
= 25 C
-
-
GSS
GS
o
= 125 C
-
-
Drain to Source On-State Voltage
Drain to Source On Resistance
V
V
= 12V, I = 12A
-
-
DS(ON)
GS
D
o
r
I
V
= 9A,
T
T
= 25 C
-
0.068
Ω
DS(ON)12
D
C
= 12V
o
GS
= 125 C
-
-
-
Ω
C
Turn-On Delay Time
Rise Time
t
V
R
R
= 50V, I = 12A,
-
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
d(ON)
DD
D
= 4.17Ω, V = 12V,
L
GS
t
-
-
r
= 7.5Ω
GS
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
-
-
f
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Q
V
= 0V to 12V
V
= 50V,
-
35
10
9
g(12)
GS
DD
= 12A
I
D
Q
-
gs
gd
Q
-
Q
V
V
= 0V to 20V
= 0V to 2V
-
56
3
g(20)
g(TH)
GS
Q
-
-
GS
V
I
= 12A, V
D DS
= 15V
= 0V,
-
6
-
(PLATEAU)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
V
= 25V, V
GS
-
1570
380
20
-
-
pF
pF
pF
ISS
DS
f = 1MHz
C
-
-
OSS
RSS
C
-
-
o
Thermal Resistance Junction to Case
R
-
5.0
C/W
JC
θ
©2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
FSPL130R, FSPL130F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.5
160
-
UNITS
V
V
I
I
= 12A
-
-
-
-
-
SD
SD
Reverse Recovery Time
Reverse Recovery Charge
t
= 12A, dI /dt = 100A/µs
ns
rr
SD
SD
Q
0.68
µC
RR
o
Electrical Specifications up to 300 krad T = 25 C, Unless Otherwise Specified
C
MIN
100 krad
100
MAX
MIN
300 krad
100
MAX
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 0, I = 1mA
UNITS
Drain to Source Breakdown Volts (Note 3)
V
V
V
V
V
V
-
-
V
V
DSS
GS(TH)
GS
GS
GS
GS
GS
GS
D
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
(Note 3)
V
= V , I = 1mA
DS
2.0
4.5
1.5
4.5
D
(Notes 2, 3)
(Note 3)
I
= ±30V, V
= 0V
-
-
-
-
100
25
-
-
-
-
100
50
nA
µA
V
GSS
DS
= 80V
I
= 0, V
DSS
DS
= 12V, I = 12A
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
(Notes 1, 3)
(Notes 1, 3)
V
0.912
0.075
0.972
0.080
DS(ON)
D
r
= 12V, I = 9A
Ω
DS(ON)12
D
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
= 12V, V
= 0V and V
GS
= 0V, V
= 80% BV
.
GS
DS
DS
DSS
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
(NOTE 6)
(NOTE 7)
MAXIMUM
APPLIED
BIAS
TYPICAL LET
(MeV/mg/cm)
V
V
BIAS
GS
(V)
DS
(V)
TEST
SYMBOL
TYPICAL RANGE (µ)
Single Event Effects Safe Operating Area
SEESOA
37
60
82
82
36
32
28
28
-5
-2
0
100
80
60
-2
30
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
2
o
5. Fluence = 1E5 ions/cm (typical), T = 25 C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves Unless Otherwise Specified
2
LET = 37MeV/mg/cm , RANGE = 36µ
2
LET = 60MeV/mg/cm , RANGE = 32µ
120
2
LET = 82MeV/mg/cm , RANGE = 28µ
LET = 37
120
2
FLUENCE = 1E5 IONS/cm (TYPICAL)
100
80
60
40
20
0
100
80
60
40
20
0
LET = 82
LET = 60
o
TEMP = 25 C
-6 -7
0
4
8
12
16
BIAS (V)
20
24
0
-1
-2
-3
V
-4
(V)
-5
NEGATIVE V
GS
GS
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURV E
©2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
FSPL130R, FSPL130F
Performance Curves Unless Otherwise Specified (Continued)
1E-3
14
12
10
8
1E-4
ILM = 10A
30A
1E-5
1E-6
1E-7
100A
6
300A
4
2
0
-50
0
50
, CASE TEMPERATURE ( C)
C
100
o
150
10
30
100
300
1000
T
DRAIN SUPPLY (V)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
AS
200
100
o
T
= 25 C
C
12V
Q
G
100µs
10
1
1ms
Q
Q
GD
GS
OPERATION IN THIS
AREA MAY BE
10ms
V
G
LIMITED BY r
DS(ON)
0.10
1
10
100
300
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
CHARGE
FIGURE 6. BASIC GATE CHARGE WAVEFORM
FIGURE 5. FORWARD BIAS SAFE OPERATING ARE A
2.5
100
80
60
40
20
0
V
= 14V
= 12V
= 10V
= 8V
PULSE DURATION = 250ms, V
GS
= 12V, I = 9A
D
GS
V
GS
2.0
1.5
1.0
0.5
0.0
V
GS
V
GS
V
= 6V
GS
V
= 6V
GS
-80
-40
0
40
80
120
160
0
1
2
3
4
5
o
T , JUNCTION TEMPERATURE ( C)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
J
FIGURE 7. TYPICAL NORMALIZED r
TEMPERATURE
vs JUNCTION
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
DS(ON)
©2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
FSPL130R, FSPL130F
Performance Curves Unless Otherwise Specified (Continued)
10
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
SINGLE PULSE
0.01
NOTES:
DUTY FACTOR: D = t /t
t
1
2
+ T
1
t
PEAK T = P
x Z
2
J
DM
JC
C
θ
0.001
-5
-4
-3
10
-2
-1
0
1
10
10
10
t, RECTANGULAR PULSE DURATION (s)
10
10
10
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
100
o
STARTING T = 25 C
J
o
STARTING T = 150 C
J
10
IF R = 0
t
= (L) (I ) / (1.3 RATED BV - V
DSS DD
)
AV
IF R ≠ 0
= (L/R) ln [(I *R) / (1.3 RATED BV
AS
t
- V ) + 1]
DD
AV
0.01
AS
0.1
, TIME IN AVALANCHE (ms)
DSS
1
1
10
t
AV
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I IS REACHED
AS
V
DS
L
BV
+
I
-
DSS
CURRENT
TRANSFORMER
AS
t
P
V
DS
I
AS
V
VARY t TO OBTAIN
DD
P
+
50Ω
REQUIRED PEAK I
AS
V
DD
V
≤ 20V
GS
-
50V-150V
DUT
50Ω
t
P
0V
t
AV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
FSPL130R, FSPL130F
Test Circuits and Waveforms (Continued)
t
ON
t
OFF
t
d(OFF)
V
DD
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
V
DS
V
= 12V
GS
10%
10%
DUT
0V
90%
50%
R
GS
50%
V
GS
PULSE WIDTH
10%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
o
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T = 25 C, Unless Otherwise Specified
C
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
SYMBOL
TEST CONDITIONS
= ±30V
MAX
UNITS
nA
I
V
V
±20 (Note 7)
±25 (Note 7)
±20% (Note 8)
±20% (Note 8)
GSS
GS
I
= 80% Rated Value
o
µA
DSS
DS
r
T
= 25 C at Rated I
D
Ω
DS(ON)
C
V
I
= 1.0mA
V
GS(TH)
D
8. Or 100% of Initial Reading (whichever is greater).
9. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
= 20V, L = 0.1mH; Limit = 48A
JANS EQUIVALENT
Unclamped Inductive Switching
Thermal Response
Gate Stress
V
V
= 20V, L = 0.1mH; Limit = 48A
GS(PEAK)
GS(PEAK)
t
= 10ms; V = 25V; I = 1A; LIMIT = 60mV
t
= 10ms; V = 25V; I = 1A; LIMIT = 60mV
H
H
H
H
H
H
V
= 45V, t = 250µs
V
= 45V, t = 250µs
GS
GS
Pind
Optional
Required
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25 C)
Pre Burn-In Tests (Note 9)
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25 C)
MIL-PRF-750, Method 1042, Condition B
o
o
Steady State Gate
Bias (Gate Stress)
MIL-PRF-750, Method 1042, Condition B
V
= 80% of Rated Value,
V
= 80% of Rated Value,
GS
= 150 C, Time = 48 hours
GS
T = 150 C, Time = 48 hours
A
o
o
T
A
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests and
Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-PRF-750, Method 1042, Condition A
MIL-PRF-750, Method 1042, Condition A
V
= 80% of Rated Value,
V
= 80% of Rated Value,
DS
= 150 C, Time = 160 hours
DS
T = 150 C, Time = 240 hours
A
o
o
T
A
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-PRF-19500, Group A, Subgroup 2
MIL-PRF-19500, Group A,
Subgroups 2 and 3
NOTE:
10. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
Safe Operating Area
SYMBOL
SOA
∆V
TEST CONDITIONS
= 80V, t = 10ms
MAX
1.4
UNITS
A
V
DS
= 500ms; V = 25V; I = 1A
Thermal Impedance
t
230
mV
SD
H
H
H
©2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
FSPL130R, FSPL130F
Rad Hard Data Packages - Fairchild Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
D. Group A
E. Group B
- Attributes Data Sheet
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group C
G. Group D
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- X-Ray and X-Ray Report
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
- Attributes Data Sheet
- Pre and Post Radiation Data
©2001 Fairchild Semiconductor Corporation
FSPL130R, FSPL130F Rev. B
相关型号：
FSPL134D1
Power Field-Effect Transistor, 10A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
INFINEON
FSPL134R3
Power Field-Effect Transistor, 10A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
INFINEON
FSPL134R4
Power Field-Effect Transistor, 10A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
INFINEON
FSPL230D1
9A, 200V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN-3
RENESAS
FSPL230F4
9A, 200V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN-3
RENESAS
©2020 ICPDF网 联系我们和版权申明