FT0104MA [ETC]

Logic Level TRIACs ; 逻辑电平双向可控硅\n
FT0104MA
型号: FT0104MA
厂家: ETC    ETC
描述:

Logic Level TRIACs
逻辑电平双向可控硅\n

可控硅 三端双向交流开关
文件: 总4页 (文件大小:132K)
中文:  中文翻译
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FT01...A  
LOGIC LEVEL TRIAC  
TO92  
(Plastic)  
On-State Current  
Gate Trigger Current  
1.0 Amp  
< 10 mA  
Off-State Voltage  
200 V ÷ 400 V ( 02, 03)  
200 V ÷ 600 V (04, 05, 07, 09)  
MT1  
G
MT2  
The FT01 series of TRIACs uses a high  
performance PNPN technology.  
These part are intended for general  
purpose applications where logic  
compatible gate sensitivity is required.  
Absolute Maximum Ratings, according to IEC publication No. 134  
SYMBOL  
PARAMETER  
RMS On-state Current  
CONDITIONS  
Min.  
Max.  
Unit  
All Conduction Angle, TL = 70 ºC  
Half Cycle, 60 Hz  
Half Cycle, 50 Hz  
tp = 10 ms, Half Cycle  
20 µs max.  
1.0  
8.5  
8
A
A
IT(RMS)  
Non-repetitive On-State Current  
Non-repetitive On-State Current  
Fusing Current  
ITSM  
ITSM  
I2t  
A
A2s  
0.35  
1
IGM  
Peak Gate Current  
A
PGM  
PG(AV)  
di/dt  
Peak Gate Dissipation  
20 µs max.  
2
W
Gate Dissipation  
20 ms max.  
0.1  
20  
W
Critical rate of rise of on-state current  
A/µs  
IG = 2 x IGT Tr £ 100 ns, F = 120 Hz  
Tj = 125 ºC  
Operating Temperature  
Storage Temperature  
Soldering Temperature  
-40  
-40  
+125  
+150  
260  
ºC  
ºC  
ºC  
Tj  
Tstg  
Tsld  
1.6 mm from case, 10s max.  
SYMBOL  
PARAMETER  
VOLTAGE  
Unit  
V
B
D
M *  
600  
Repetitive Peak Off State  
Voltage  
200  
400  
VDRM  
VRRM  
* 04, 05, 07, 09 sensitivities  
Apr - 03  
FT01...A  
LOGIC LEVEL TRIAC  
Electrical Characteristics  
Quadrant  
Unit  
mA  
SYMBOL  
PARAMETER  
CONDITIONS  
SENSITIVITY  
02 03 04 05 07 09  
Q1÷Q3  
Q4  
IGT  
10  
10  
3
3
3
5
5
5
5
5
7
Gate Trigger Current  
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
MIN  
VD = 12 VDC , RL = 30W, Tj = 25 ºC  
mA  
µA  
V
IDRM /IRRM  
VD = VDRM  
VR = VRRM  
,
Tj = 125 ºC  
Tj = 25 ºC  
Off-State Leakage Current  
0.5  
5
,
Tj = 125 ºC  
Tj = 125 ºC  
Vto  
Rd  
Threshold Voltage  
Dynamic Resistance  
On-state Voltage  
0.95  
400  
1.5  
1.3  
0.2  
10  
mW  
V
VTM  
VGT  
VGD  
*
IT = 1.1 Amp, tp = 380 µs, Tj = 25 ºC  
Gate Trigger Voltage  
Gate Non Trigger Voltage  
Holding Current  
VD = 12 VDC , RL = 30W, Tj = 25 ºC  
V
Q1÷Q4  
Q1÷Q4  
V
D = VDRM , RL = 3.3KW, Tj = 125 ºC  
V
IT = 50 mA  
Tj = 25 ºC  
7
7
IH  
IL  
*
mA  
mA  
MAX  
MAX  
MAX  
MIN  
Latching Current  
IG = 1.2 IGT, Tj = 25 ºC  
25  
25  
50  
Q1,Q3,Q4  
Q2  
10  
14  
10  
20  
Critical Rate of Voltage Rise  
dv / dt*  
VD = 0.67 x VDRM  
,
20  
V/µs  
V/µs  
Gate open  
Tj = 125 ºC  
1
Critidal rise rate of  
commutating off-state  
Voltage  
0.5  
2
(dv/dt)c*  
(di/dt)c= 0.44 A/ms  
Tj = 110 ºC  
MIN  
Thermal Resistance  
Junction-Leads for AC  
Rth(j-l)  
Rth(j-a)  
60  
ºC/W  
ºC/W  
Thermal Resistance  
Junction-Ambient  
150  
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.  
PART NUMBER INFORMATION  
F
T
01  
05  
B
A
00 BU  
FAGOR  
TRIAC  
PACKAGING  
FORMING  
CASE  
VOLTAGE  
CURRENT  
SENSITIVITY  
Apr - 03  
FT01...A  
LOGIC LEVEL TRIAC  
Fig. 2: RMS on-state current versus ambient  
temperature (full cycle)  
Fig. 1: Maximum power dissipation versus  
RMS on-state current (full cycle)  
I
(A)  
P (W)  
T(RMS)  
1.25  
1.0  
1.25  
1.0  
0.75  
0.50  
0.25  
0.0  
0.75  
0.50  
0.25  
0.0  
I
(A)  
T(RMS)  
T lead (ºC)  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Fig. 4: Relative variation of thermal impedance  
junction to ambient versus pulse duration.  
Fig. 3: RMS on-state current versus ambient  
temperature (full cycle)  
I
(A)  
Zth(j-a) / Rth(j-a)  
T(RMS)  
1
0.8  
0.6  
0.4  
0.2  
0
1.00  
0.10  
T amb (ºC)  
10 20 30 40 50 60 70 80 90 100 110 120 130  
tp (s)  
0.01  
0
1E-3  
1E-2  
1E-1  
1E+0 1E+1 1E+2 5E+2  
Fig. 5: Relative variation of gate trigger current ,  
holding current and latching current versus  
junction temperature.  
Fig. 6: Non repetitive surge peak on-state  
current versus number of cycles.  
Igt , Ih , Il (Tj)  
I
(A)  
TSM  
Igt , Ih , Il (Tj = 25 ºC)  
2.6  
8
7
6
5
4
3
2
1
Tj initial = 25 ºC  
2.4  
2.2  
2.0  
1.8  
Igt  
1.6  
1.4  
1.2  
Ih & Il  
1.0  
0.8  
0.6  
Number of cycles  
Tj (ºC)  
0.4  
-40 -20  
0
20 40 60 80 100 120 140  
1
10  
100  
1000  
Apr - 03  
FT01...A  
LOGIC LEVEL TRIAC  
Fig. 7: Non repetitive surge peak on-state  
current for a sinusoidal pulse with width:  
tp £ 10 ms, and corresponding value of I2t.  
Fig. 8: On-state characteristics (maximum  
values).  
I
(A). Pt (A2s)  
I
(A)  
TSM  
TM  
10  
100  
10  
1
Tj initial = 25 ºC  
Tj initial  
25 ºC  
Tj max  
I
TSM  
1
Tj max  
Vto = 0.95V  
Rt = 0.420W  
I2  
t
V
(V)  
TM  
tp(ms)  
0.1  
0.1  
1
10  
0 0.5 1 1.5 2 2.5 3 3.5 4  
TO92 (Plastic)  
PACKAGE MECHANICAL DATA  
DIMENSIONS  
REF.  
Milimeters  
Typ.  
1.5  
Min.  
-
Max.  
-
A
H
A
B
C
D
E
F
G
H
a
4.55  
2.42  
1.15  
4.55  
12.7  
3.55  
-
4.6  
4.65  
2.66  
1.39  
4.65  
15.5  
3.65  
-
a
2.54  
1.27  
4.6  
14.1  
3.6  
1.5  
0.43  
D
B
C
b
E
F
G
0.38  
0.48  
0.43  
b
0.33  
0.38  
Marking: type number  
Weight: 0.2 g  
Apr - 03  

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