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FT0405ME [ETC]

Logic Level TRIACs ; 逻辑电平双向可控硅\n
FT0405ME
型号： FT0405ME
厂家： ETC    ETC
描述：

Logic Level TRIACs
逻辑电平双向可控硅\n

可控硅 三端双向交流开关
文件： 总4页 (文件大小：132K)
中文：  中文翻译
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FT04...E/F  
LOGIC LEVEL TRIAC  
On-State Current  
Gate Trigger Current  
TO202-1 (E)  
TO202-3 (F)  
4 Amp  
< 5 mA to < 10 mA  
Off-State Voltage  
200 V ÷ 600 V  
MT2  
MT2  
This series of TRIACs uses a high  
performance PNPN technology.  
MT1  
MT2  
MT1  
MT2  
These parts are intended for general  
purpose AC switching applications with  
highly inductive loads.  
G
G
Absolute Maximum Ratings, according to IEC publication No. 134  
SYMBOL  
PARAMETER  
RMS On-state Current  
CONDITIONS  
Min.  
Max.  
Unit  
All Conduction Angle, Tc = 110 ºC  
Half Cycle, 60 Hz  
Half Cycle, 50 Hz  
tp = 10 ms, Half Cycle  
20 µs max.  
4
A
A
IT(RMS)  
Non-repetitive On-State Current  
Non-repetitive On-State Current  
Fusing Current  
21  
20  
2.2  
ITSM  
ITSM  
I2t  
A
A2s  
Peak Gate Current  
1.2  
2
A
IGM  
Peak Gate Dissipation  
20 µs max.  
W
PGM  
PG(AV)  
di/dt  
Gate Dissipation  
20 ms max.  
0.2  
W
Critical rate of rise of on-state current  
20  
A/µs  
IG = 2 x IGT  
Tr £ 200 ns, F = 120 Hz  
Tj = 125 ºC  
Operating Temperature  
Storage Temperature  
Soldering Temperature  
-40  
-40  
+125  
+150  
260  
ºC  
ºC  
ºC  
Tj  
Tstg  
Tsld  
1.6 mm from case, 10s max.  
SYMBOL  
PARAMETER  
CONDITIONS  
VOLTAGE  
Unit  
V
B
D
M
RGK = 1 KW  
Repetitive Peak Off State  
Voltage  
200  
400  
600  
VDRM  
VRRM  
Jul - 02  
FT04...E/F  
LOGIC LEVEL TRIAC  
Electrical Characteristics  
Quadrant  
Unit  
mA  
SYMBOL  
PARAMETER  
CONDITIONS  
SENSITIVITY  
05  
5
09  
10  
10  
Q1÷Q3  
Q4  
IGT  
Gate Trigger Current  
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
MIN  
VD = 12 VDC , RL = 30W, Tj = 25 ºC  
5
mA  
mA  
VD = VDRM  
VR = VRRM  
,
Tj = 125 ºC  
Tj = 25 ºC  
IDRM /IRRM  
0.5  
5
Off-State Leakage Current  
,
µA  
V
Tj = 125 ºC  
Tj = 125 ºC  
Vto  
Rd  
0.95  
180  
2
Threshold Voltage  
Dynamic Resistance  
On-state Voltage  
mW  
V
VTM  
VGT  
VGD  
IH*  
IL  
*
IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC  
VD = 12 VDC , RL = 30W, Tj = 25 ºC  
VD = VDRM , RL = 3.3KW, Tj = 125 ºC  
1.3  
0.2  
Gate Trigger Voltage  
Gate Non Trigger Voltage  
Holding Current  
V
Q1÷Q4  
Q1÷Q4  
V
IT = 50 mA  
Tj = 25 ºC  
mA  
mA  
MAX  
MAX  
MAX  
MIN  
7
10  
15  
Latching Current  
IG = 1.2 IGT, Tj = 25 ºC  
Q1,Q3,Q4  
Q2  
10  
15  
20  
25  
Critical Rate of Voltage Rise  
dv / dt*  
VD = 0.67 x VDRM  
,
V/µs  
V/µs  
Gate open  
100  
T
j = 125 ºC  
Critidal rise rate of  
commutating off-state  
Voltage  
1
(dv/dt)c*  
MIN  
2
(di/dt)c= 1.8 A/ms  
Tj = 110 ºC  
Thermal Resistance  
Junction-Leads for AC  
15  
ºC/W  
ºC/W  
Rth(j-l)  
Rth(j-a)  
Thermal Resistance  
Junction-Ambient  
100  
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.  
PART NUMBER INFORMATION  
F
T
04  
09  
B
E
00 TU  
FAGOR  
SCR  
PACKAGING  
FORMING  
CASE  
VOLTAGE  
CURRENT  
SENSITIVITY  
Jul - 02  
FT04...E/F  
LOGIC LEVEL TRIAC  
Fig. 1: Maximum average power disipation  
versus RMS on-state current (full cycle)  
Fig. 2: RMS on-state current versus ambient  
temperature (full cycle)  
I
(A)  
P (W)  
5
T(RMS)  
5
4
3
2
1
0
Rth(j-a)=Rth(j-l)  
4
3
2
Rth(j-a)=100 ºC/W  
360 º  
1
a
I
(A)  
T(RMS)  
T amb (ºC)  
0
0
25  
50  
75  
100  
125  
0.5  
1
1.5  
2.5  
3
3.5  
0
2
Fig. 4: Relative variation of gate trigger  
current, holding and latching current versus  
junction temperature.  
Fig. 3: Relative variation of thermal impedance  
junction to ambient versus pulse duration.  
Zth(j-a) / Rth(j-a)  
1.00  
I
, I  
(Tj) / I , I (Tj = 25 ºC)  
GT H, IL  
GT H, IL  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
IGT  
0.10  
IH & IL  
Tj (ºC)  
0.01  
tp (s)  
1E-3  
1E-2  
1E-1  
1E+0 1E+1 1E+2 5E+2  
-40 -20  
0
20 40 60 80 100 120 140  
Fig. 6: Non repetitive surge peak on-state  
current for a sinusoidal pulse with width:  
tp £ 10 ms, and corresponding value of I2t.  
Fig. 5: Non repetitive surge peak on-state  
current versus number of cycles.  
I
(A). I2t (A2s)  
I
(A)  
TSM  
TSM  
35  
30  
25  
20  
15  
10  
5
100  
10  
1
Tj initial = 25 ºC  
F= 50Hz  
Tj initial = 25 ºC  
I
TSM  
I2  
t
Number of cycles  
0
tp(ms)  
1
10  
100  
1000  
1
10  
Jul - 02  
FT04...E/F  
LOGIC LEVEL TRIAC  
Fig.7: On-state characteristics (maximum  
values)  
I
(A)  
TM  
20.0  
10.0  
Tj max  
Vto = 0.95V  
Rd = 180 mW  
Tj max  
1.0  
0.1  
Tj initial  
25 ºC  
V
(V)  
TM  
0
0.5  
1
1.5  
2 2.5 3 3.5 4 4.5  
TO 202-1  
TO 202-3  
PACKAGE MECHANICAL DATA  
TO 202-1  
TO 202-3  
A
K
A
0,51  
max.  
10,1  
3,16  
3,20  
H
(.020)  
max.  
10,1  
3,2  
(.398)  
(.124)  
(.126)  
(.126)  
1,5  
(.059)  
(.398)  
J
max.  
1,5  
I
(.059)  
13,7  
(.540)  
7,3  
(.287)  
C
G
max.  
1,5  
(.059)  
F
1,5  
max.  
1,4  
(.055)  
7,3  
O
(.059) J  
10,5  
(.C287)  
max.  
0,7  
D
(.413)  
0,51  
F
4,5  
H
(.028)  
(.020)  
(.177) M  
max.  
1,4  
(.055)  
O
10,5  
(.413)  
max.  
0,7  
D
P
4,5  
2,54  
(.100)  
N1  
(.177) M  
(.028)  
max.  
5,3  
(.209)  
P
2,54  
(.100)  
N1  
max.  
5,3  
N
(.209)  
N
Jul - 02  

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