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FT0414MI [ETC]

High Commutation TRIACs ; 高换向双向可控硅\n
FT0414MI
型号： FT0414MI
厂家： ETC    ETC
描述：

High Commutation TRIACs
高换向双向可控硅\n

可控硅 三端双向交流开关
文件： 总4页 (文件大小：138K)
中文：  中文翻译
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FT04...I  
HIGH COMMUTATION TRIAC  
IPAK  
(Plastic)  
On-State Current  
Gate Trigger Current  
4 Amp  
< 25 mA to < 35 mA  
Off-State Voltage  
200 V ÷ 600 V  
MT2  
MT1  
MT2  
This series of TRIACs uses a high  
performance PNPN technology.  
G
These parts are intended for general  
purpose applications.  
Absolute Maximum Ratings, according to IEC publication No. 134  
SYMBOL  
PARAMETER  
RMS On-state Current  
CONDITIONS  
Min.  
Max.  
Unit  
All Conduction Angle, Tc = 110 ºC  
Half Cycle, 60 Hz  
Half Cycle, 50 Hz  
tp = 10 ms, Half Cycle  
20 µs max.  
4
31  
30  
5.1  
4
A
A
IT(RMS)  
Non-repetitive On-State Current  
Non-repetitive On-State Current  
Fusing Current  
ITSM  
ITSM  
I2t  
A
A2s  
IGM  
Peak Gate Current  
A
Peak Gate Dissipation  
20 µs max.  
3
W
PGM  
PG(AV)  
di/dt  
Gate Dissipation  
20 ms max.  
1
W
Critical rate of rise of on-state current  
50  
A/µs  
IG = 2 x IGT Tr £ 100 ns, F = 120 Hz  
Tj = 125 ºC  
Operating Temperature  
Storage Temperature  
Soldering Temperature  
-40  
-40  
+125  
+150  
260  
ºC  
ºC  
ºC  
Tj  
Tstg  
Tsld  
4.5 mm from case, 10s max.  
SYMBOL  
PARAMETER  
VOLTAGE  
Unit  
V
B
D
M
Repetitive Peak Off State  
Voltage  
200  
400  
600  
VDRM  
VRRM  
Apr - 03  
FT04...I  
HIGH COMMUTATION TRIAC  
Electrical Characteristics  
Quadrant  
Unit  
SYMBOL  
PARAMETER  
CONDITIONS  
SENSITIVITY  
11  
25  
14  
35  
Q1÷Q3  
mA  
mA  
µA  
V
IGT  
IDRM /IRRM  
Gate Trigger Current  
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
MIN  
VD = 12 VDC , RL = 30W, Tj = 25 ºC  
Off-State Leakage Current  
VD = VDRM  
VR = VRRM  
,
Tj = 125 ºC  
Tj = 25 ºC  
1
,
5
Threshold Voltage  
Dynamic Resistance  
On-state Voltage  
Tj = 125 ºC  
Tj = 125 ºC  
Vto  
Rd  
0.9  
120  
1.6  
1.3  
0.2  
mW  
V
VTM  
VGT  
VGD  
IH *  
IL  
*
IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC  
VD = 12 VDC , RL = 30W, Tj = 25 ºC  
VD = VDRM , RL = 3.3KW, Tj = 125 ºC  
IT = 100 mA , Gate Open Tj = 25 ºC  
IG = 1.2 IGT, Tj = 25 ºC  
Gate Trigger Voltage  
Gate Non Trigger Voltage  
Holding Current  
Q1÷Q3  
Q1÷Q3  
V
V
MAX  
MAX  
MAX  
MIN  
mA  
mA  
25  
25  
35  
50  
Latching Current  
Q1,Q3  
Q2  
50  
60  
Critical Rate of Voltage Rise  
dv / dt*  
VD = 0.67 x VDRM  
,
V/µs  
200  
400  
Gate open  
T
j = 110 ºC  
Thermal Resistance  
Junction-Case for AC  
Rth(j-c)  
Rth(j-a)  
ºC/W  
ºC/W  
2.6  
Thermal Resistance  
Junction-Ambient  
100  
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.  
PART NUMBER INFORMATION  
F
T
04  
11  
B
I
00 TU  
FAGOR  
SCR  
PACKAGING  
FORMING  
CASE  
VOLTAGE  
CURRENT  
SENSITIVITY  
Apr - 03  
FT04...I  
HIGH COMMUTATION TRIAC  
Fig. 1: Maximum RMS power dissipation  
versus RMS on-state current.  
Fig. 2: Correlation between maximum  
RMS power dissipation and maximum  
allowable temperature (Tamb and T case).  
P (W)  
P (W)  
T case (ºC)  
7
7
6
5
4
3
2
1
0
180 º  
a = 180 º  
a
-75  
-85  
-95  
6
5
4
3
2
1
0
a
Rth (j-c)  
a = 120 º  
a = 90 º  
a = 60 º  
-105  
a
= 30 º  
Rth (j-a)  
-115  
-125  
I
(A)  
T(RMS)  
Tamb (ºC)  
0
1
2
3
4
0
20 40 60 80 100 120 140  
Fig. 3: RMS on-state current versus case  
temperature.  
Fig. 4: Relative variation of thermal impedance  
junction to ambient versus pulse duration.  
I
(A)  
Zth(j-a) / Rth(j-a)  
T(RMS)  
5
4
3
2
1
0
1.00  
a = 180 º  
0.10  
Tamb (ºC)  
tp (s)  
0.01  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
1E-3  
1E-2  
1E-1  
1E+0 1E+1 1E+2 5E+2  
Fig. 5: Relative variation of gate trigger current  
and holding current versus junction temperature.  
Fig. 6: Non repetitive surge peak on-state  
current versus number of cycles.  
Igt (Tj)  
Ih (Tj)  
I
(A)  
TSM  
Igt (Tj = 25 ºC)  
Ih (Tj = 25 ºC)  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
40  
30  
20  
10  
0
Tj initial = 25 ºC  
Igt  
Ih  
Number of cycles  
Tj (ºC)  
-40 -20  
0
20 40 60 80 100 120 140  
1
10  
100  
1000  
Apr - 03  
FT04...I  
HIGH COMMUTATION TRIAC  
Fig. 7: Non repetitive surge peak on-state  
current for a sinusoidal pulse with width:  
tp £ 10 ms, and corresponding value of I2t.  
Fig. 8: On-state characteristics (maximum  
values).  
I
(A). I2t (A2s)  
I
(A)  
TM  
TSM  
100  
10  
1
100.0  
10.0  
Tj initial = 25 ºC  
I
TSM  
Tj max  
Tj = Tj max.  
Vto = 0.8V  
Rd = 60 mW  
I2  
t
Tj = 25 ºC  
1.0  
0.1  
V
TM  
(V)  
tp(ms)  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
1
10  
IPAK TO 251-AA  
PACKAGE MECHANICAL DATA  
2º  
8º  
DIMENSIONS  
REF.  
Milimeters  
Nominal  
2.3 0.08  
1.067 0.01  
0.75 0.1  
0.95  
Min.  
2.19  
0.89  
0.64  
0.76  
0.46  
Max.  
2.38  
1.14  
0.89  
1.14  
0.58  
A
A1  
b
b1  
c
A
ø1x0.15  
E1  
c2  
E
L3  
2º  
2º  
8º  
8º  
8º  
D1  
D
c2  
D
D1  
E
E1  
e
L
0.8 0.013  
6.1 0.1  
H
5.97  
5.21  
6.35  
5.21  
6.22  
5.52  
6.73  
5.46  
2º  
2º  
8º  
L1  
6.58 0.14  
5.36 0.1  
2.28BSC  
9.2 0.2  
2 0.1  
e
b
L
8.89  
1.91  
0.89  
9.65  
2.28  
1.27  
L1  
L3  
b1  
A1  
Marking: type number  
Weight: 0.2 g  
c
Apr - 03  

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