FTM7921ER [ETC]
Optoelectronic ; 光电\n
ETC 
Dual Drive 10Gb/s
LN Modulator with Monitor PD
FTM7921ER
FEATURES
• Z-Cut Design Supports Low Drive Voltages
• Zero Chirp Differential Input Design
• Integrated Monitor Photodiode
• GPO RF Input Connectors
DESCRIPTION
The FTM7921ER is a Ti:LiNbO Dual Drive Mach-Zehnder
3
modulator with a modulation speed of up to 10.7 Gb/s. This optical
modulator integrates a monitor PD chip and coupler function for the
automatic bias control (ABC) to compensate for DC-drift and other
phenomena.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C, Unless otherwise specified)
Limits
Typ.
Parameter
Symbol
Condition
Unit
Min.
Max.
T
Storage Temperature
Ambient
Case
-40
-
85
°C
°C
stg
T
Operating Case Temperature
-5
-
70
op
Storage Relative Humidity
Operating Relative Humidity
RH
stg
5
5
-
-
95
85
%
%
RH
op
DC Input Voltage
V
-
-
-
-
-
-
16
50
20
V
mW
V
in(DC)
in(opt)
Optical Input Power
Monitor PD Reverse Voltage
P
V
RM
RM
Monitor PD Reverse Current
Monitor PD Forward Current
I
-
-
-
-
1
3
mA
mA
I
FM
ELECTRICAL CHARACTERISTICS (Tc =-5 ~ 70°C, 25 years Unless otherwise specified)
Limit
Typ.
Parameter
Symbol
Condition
Unit
Min.
Max.
Operating Bit Rate
-
10.7
-
-
Gb/s
At 10.7 Gb/s,
Complementary Drive
At low frequency,
single drive,
Vπ
Drive Voltage
Drive Voltage
-
-
-
-
2.6
4.0
V
V
V
π
and at each electrode
DC Bias Voltage
V
-15
39
-
15
-
V
Single Bias
Bias
Ω
RF Input Impedance
Zin
50
Internally Terminated
130MHz ~ 5GHz
5GHz ~ 10GHz
13
10
-
-
-
-
RF Return Loss
S11
dB
Edition 1.1
June 2002
1
Dual Drive 10Gb/s
LN Modulator with Monitor PD
FTM7921ER
OPTICAL SPECIFICATIONS (Tc=-5 ~ 70°C, 25 years)
Limit
Typ.
Parameter
Symbol
Condition
Unit
Min.
8.5
Max.
-
3dB Down Relative to
130MHz, Small-signal
Optical Bandwidth
BW
-
-
GHz
C Band
L Band
1530
1570
nm
dB
Operating Wavelength
On/Off Extinction Ratio
λ
op
1570
18
-
-
1608
-
At Low Frequency
R
ext
At 10.7Gb/s Complementary Drive
BOL, Input & Output
12
35
30
-
-
-
-
-
-
dB
ORL
IL
Optical Return Loss
EOL, Input & Output
C Band, No Connector
L Band, No Connector
-
-
-
-
6.0
7.0
dB
ps
Optical Insertion Loss
RF Input Timing Skew
T
-2.5
-
+2.5
skw
t
Rise Time
Fall Time
20-80%
10-90%
-
-
-
-
30
45
ps
ps
r
t
f
Pulse Overshoot
Pulse Undershoot
Alpha Parameter
-
-
-
-
-
-
-
10
10
%
%
-
α
-0.2
+0.2
Balanced Input
ELECTRO-OPTICAL SPECIFICATIONS OF MONITOR PD (Tc=-5 ~ 70°C, 25 years)
Limit
Typ.
Parameter
Symbol
Condition
Unit
Min.
Max.
Responsivity
RmAC
-
0.0023
-
0.022
A/W
Bias Shift
-
Note (1)
-20
-
-
+20
0.3
%
V
Difference at Low
Frequency
Monitor PD Vπ Difference
∆Vπ
-0.3
Note 1. Reference Table 1 for explanation
2
Dual Drive 10Gb/s
LN Modulator with Monitor PD
FTM7921ER
Table 1
Optical Output
V : Minimum absolute applied voltage
1
corresponding to maximum optical output
V : Minimum absolute applied voltage
2
corresponding to minimum monitor current
V
π
V : Minimum absolute applied voltage
3
corresponding to maximum monitor current
Applied Voltage (V)
V
2
V
1
Monitor Current
V
V
= | V - V |
1 2
π
= | V - V |
πm
3
4
Bias Shift = (V - V )/V
1
3
π
∆V = V
-V
π
πm
π
V
πm
Applied Voltage (V)
V
4
V
3
Bias Shift
Note: These measurements are performed at a low frequency of ≤100Hz.
3
Dual Drive 10Gb/s
LN Modulator with Monitor PD
FTM7921ER
UNIT: inch
“ER” PACKAGE
1.657 0.004
0.803 0.004
#4-40 UNC-2B Min 0.15 Deep (4 Places)
0.583
1.504
2.484 0.008
2 X GPO Connector
0.025
0.41 .004
0.21 0.004
Monitor Photodiode-Anode (negative bias)
4.378 0.08
1.34 0.02
3.811 0.02
2.669 0.004
Fiber Length 35.5
4
Fiber Length 59
4
3.78 0.04
LC Connector
FC Connector
For further information please contact:
CAUTION
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.fcsi.fujitsu.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
FAX: +81-426-43-5582
TEL: +852-23770226
FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0502M200
4
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