GFU50N03 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 65A I(D) | TO-251AA ; 晶体管| MOSFET | N沟道| 30V V（ BR ） DSS | 65A I（ D） | TO- 251AA\n
| 型号： | GFU50N03 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 65A I(D) | TO-251AA
|
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GFU50N03
New Product
Vishay Semiconductor
N-Channel Enhancement-Mode MOSFET
VDS 30V
RDS(ON) 9mΩ
ID 65A
D
TO-251 (IPAK)
G
0.265 (6.73)
0.255 (6.48)
0.094 (2.39)
0.087 (2.21)
0.214 (5.43)
0.206 (5.23)
0.023 (0.58)
0.018 (0.46)
S
D
0.050 (1.27)
0.035 (0.89)
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
and motor drives
0.245 (6.22)
0.235 (5.97)
• Fast Switching for High Efficiency
G
S
Mechanical Data
Case: JEDEC TO-251 molded plastic body
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
0.375 (9.53)
0.350 (8.89)
Weight: 0.011oz., 0.4g
0.035 (0.89)
0.028 (0.71)
0.102 (2.59) 0.023 (0.58)
0.078 (1.98) 0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
VDS
VGS
ID
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
Pulsed Drain Current
30
V
±
20
65
A
IDM
150
T
C = 25°C
62.5
25.0
Maximum Power Dissipation
PD
W
TC = 100°C
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
TJ, Tstg
RθJC
–55 to 150
2.0
°C
°C/W
°C/W
Junction-to-Ambient Thermal Resistance
Notes: (1) Maximum DC current limited by the package.
RθJA
110
Document Number 74575
17-Dec-01
www.vishay.com
1
GFU50N03
Vishay Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current(1)
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 30V, VGS = 0V
VDS ≥ 5V, VGS = 10V
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 13A
VDS = 15V, ID = 15A
30
1.0
—
—
50
—
—
—
—
—
—
3.0
±100
1.0
—
V
V
—
nA
µA
A
IDSS
—
ID(on)
—
7.1
10
50
9
Drain-Source On-State Resistance(1)
RDS(on)
gfs
mΩ
12
Forward Transconductance(1)
—
S
Dynamic
VDS=15V, VGS=5V, ID=15A
—
—
—
—
—
—
—
—
—
—
—
31
60
43
84
—
Total Gate Charge
Qg
nC
VDS = 15V, VGS = 10V
ID = 15A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgs
Qgd
td(on)
tr
9
8.5
13
—
26
29
132
57
—
VDD = 15V, RL = 15Ω
ID 1A, VGEN = 10V
RG = 6Ω
16
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
94
38
Input Capacitance
Ciss
Coss
Crss
3240
625
285
VGS = 0V
VDS = 15V
f = 1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max Diode Forward Current
Diode Forward Voltage(1)
—
pF
—
IS
—
—
—
—
20
A
V
VSD
IS = 20A, VGS = 0V
0.85
1.3
Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
VDD
ton
toff
Switching
Test Circuit
Switching
Waveforms
RD
td(on)
td(off)
tr
90%
tf
90 %
VIN
D
VOUT
10%
10%
Output, VOUT
VGEN
INVERTED
RG
DUT
G
90%
50%
50%
Input, VIN 10%
S
PULSE WIDTH
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2
Document Number 74575
17-Dec-01
GFU50N03
Vishay Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
Fig. 2 – Transfer Characteristics
80
80
70
4.5V
10V
6.0V
VDS = 10V
70
60
5.0V
4.0V
60
3.5V
50
40
50
40
TJ = 125°C
30
20
10
0
30
--55°C
3.0V
20
10
25°C
VGS = 2.5V
0
0
1
2
3
4
1
2
3
4
5
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 4 – On-Resistance vs.
Drain Current
Fig. 3 – Threshold Voltage
2
1.8
1.6
0.015
ID = 250µA
0.0125
0.01
VGS = 4.5V
1.4
1.2
1
0.0075
0.005
VGS = 10V
0.0025
0
0.8
0.6
--50
--25
0
25
TJ -- Junction Temperature (°C)
50
75
100
125
150
0
10
20
40
ID -- Drain Current (A)
50
60
70
80
30
Fig. 5 – On-Resistance vs.
Junction Temperature
1.6
VGS = 10V
ID = 15A
1.4
1.2
1
0.8
0.6
--50 --25
0
25
50
75
100
125
150
TJ -- Junction Temperature (°C)
Document Number 74575
17-Dec-01
www.vishay.com
3
GFU50N03
Vishay Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 6 – On-Resistance vs.
Gate-to-Source Voltage
Fig. 7 – Gate Charge
0.03
10
8
VDS = 15V
ID = 15A
ID = 15A
0.025
0.02
6
0.015
4
TJ = 125°C
0.01
2
0.005
0
25°C
0
2
4
6
8
10
0
10
20
30
40
50
60
Qg -- Gate Charge (nC)
VGS -- Gate-to-Source Voltage (V)
Fig. 9 – Source-Drain Diode
Forward Voltage
Fig. 8 – Capacitance
100
10
4000
3500
3000
VGS = 0V
f = 1MHZ
VGS = 0V
Ciss
2500
2000
TJ = 125°C
1
1500
1000
500
0
25°C
--55°C
0.1
Coss
Crss
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
25
30
VDS -- Drain-to-Source Voltage (V)
VSD -- Source-to-Drain Voltage (V)
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4
Document Number 74575
17-Dec-01
GFU50N03
Vishay Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
Fig. 11 – Transient Thermal
vs. Junction Temperature
Impedance
43
ID = 250µA
42
41
40
39
38
1. Duty Cycle, D = t1/t2
2. RθJA(t) = RθJA(norm) *RθJA
3. RθJA = 2.0°C/W
37
36
4. TJ -- TA = PDM* RθJA(t)
--50
--25
0
25
50
75
100
125
150
Pulse Duration (sec.)
TJ -- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
Fig. 13 – Maximum Safe Operating Area
1000
1000
100
10
800
600
400
R
DS(ON) Limit
DC
VGS = 10V
Single Pulse
θJC = 2.0°C/W
TA = 25°C
200
R
0
1
0.1
0.0001
0.001
0.01
0.1
1
10
1
10
100
VDS -- Drain-Source Voltage (V)
Document Number 74575
17-Dec-01
www.vishay.com
5
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