GS8050CU/E6
更新时间:2024-09-18 03:10:35
品牌:ETC
描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92
GS8050CU/E6 概述
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92
晶体管| BJT | NPN | 25V V( BR ) CEO | 800MA I(C ) | TO- 92
GS8050CU/E6 数据手册
通过下载GS8050CU/E6数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
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New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-226AA (TO-92)
0.142 (3.6)
0.181 (4.6)
Features
• NPN Silicon Epitaxial Planar Transistors for amplifier
applications. Especially suitable for low power output
stages such as portable radios in class-B push-pull
operation.
• Complementary to GS8550xU
• The “x” in the part number can be B, C or D, depending
on the current gain.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
max.
0.022 (0.55)
Packaging Codes/Options:
E6/Bulk - 5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
25
V
6
V
Collector Current
800
mA
mW
°C/W
°C
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ptot
625(1)
200(1)
150
RθJA
Tj
Storage Temperature Range
TS
–55 to +150
°C
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88193
09-May-02
www.vishay.com
1
GS8050xU
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
VCE = 1V, IC = 5mA
VCE = 1V, IC = 100mA
Min
Typ
Max
Unit
45
135
—
Current Gain Group B
85
120
160
—
—
—
160
200
300
DC Current Gain
C
D
hFE
—
VCE = 1V, IC = 800mA
IC = 2mA, IB = 0
—
25
40
6
50
—
—
—
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
V
V
IC = 100µA, IE = 0
—
—
IE = 100µA, IC = 0
—
—
V
VCB = 35V, IE = 0
—
—
—
—
—
—
—
—
100
100
—
nA
nA
V
Emitter Cut-off Current
IEBO
VEB = 6V, IC = 0
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
VCE(sat)
VBE(sat)
VBE(on)
COB
IC = 800mA, IB = 80mA
IC = 800mA, IB = 80mA
VCE = 1V, IC = 10mA
VCB = 10V, IE = 0, ƒ = 1MHz
VCE = 10V, IC = 50mA
0.51
1.2
0.66
9
—
V
1.0
—
V
Output Capacitance
pF
MHz
Gain-Bandwidth Product
ƒT
100
—
www.vishay.com
2
Document Number 88193
09-May-02
GS8050CU/E6 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
GS8050CU/E7 | ETC | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92 | 获取价格 | |
GS8050DU | ETC | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92 | 获取价格 | |
GS8050DU-E6 | VISHAY | TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal | 获取价格 | |
GS8050DU/E6 | ETC | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92 | 获取价格 | |
GS8050DU/E7 | ETC | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92 | 获取价格 | |
GS8050M-B | GOOD-ARK | Small Signal Bipolar Transistor, | 获取价格 | |
GS8050M-C | GOOD-ARK | Small Signal Bipolar Transistor, | 获取价格 | |
GS8050M-D | GOOD-ARK | Small Signal Bipolar Transistor, | 获取价格 | |
GS8050T-E7 | VISHAY | TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal | 获取价格 | |
GS8050T/E6 | VISHAY | Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN | 获取价格 |
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