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GT80J101A [ETC]

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 80A I(C) | TO-247VAR ; 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 80A I（C ） | TO- 247VAR\n
GT80J101A
型号： GT80J101A
厂家： ETC    ETC
描述：

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 80A I(C) | TO-247VAR
晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 80A I（C ） | TO- 247VAR\n

晶体 晶体管 双极性晶体管
文件： 总4页 (文件大小：218K)
中文：  中文翻译
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GT80J101A  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type  
G T 8 0 J 1 0 1 A  
High Power Switching Applications  
•
•
•
Enhancement-Mode  
High Speed: t = 0.40 µs (max) (I = 80 A)  
f
C
Low Saturation Voltage: V  
= 3.0 V (max) (I = 80 A)  
C
CE (sat)  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
600  
20  
V
V
CES  
GES  
DC  
I
80  
C
Collector current  
1ms  
A
I
160  
CP  
Collector power dissipation (Tc = 25°C)  
Junction temperature  
P
200  
W
°C  
C
T
150  
j
Storage temperature  
T
−55~150  
0.8  
°C  
stg  
Screw torque  
N·m  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
I
V
V
V
=
25 V, V = 0  
3.0  
500  
1.0  
6.0  
2.0  
3.0  
nA  
mA  
V
GES  
GE  
CE  
CE  
CE  
Collector cut-off current  
= 600 V, V  
= 0  
CES  
GE  
Gate-emitter cut-off voltage  
V
= 5 V, I = 80 mA  
GE (OFF)  
C
V
V
(1)  
I
I
= 10 A, V  
= 15 V  
= 15 V  
CE (sat)  
CE (sat)  
C
C
GE  
GE  
Collector-emitter saturation voltage  
V
(2)  
= 80 A, V  
2.4  
5500  
Input capacitance  
Rise time  
C
ies  
V
= 10 V, V = 0, f = 1 MHz  
GE  
pF  
CE  
t
0.3  
0.5  
0.6  
0.8  
r
V
OUT  
33 Ω  
Turn-on time  
Switching time  
t
on  
V
IN  
µs  
15 V  
0
Fall time  
t
f
0.25  
0.40  
1.0  
V
CC = 300 V  
−15 V  
Turn-off time  
t
0.7  
off  
Thermal resistance  
R
th (j-c)  
0.625 °C/W  
961001EAA1  
• TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in  
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of  
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure  
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please  
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.  
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.  
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by  
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its  
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or  
others.  
• The information contained herein is subject to change without notice.  
2000-06-28 1/4  
GT80J101A  
I
− V  
V
− V  
CE GE  
C
CE  
100  
80  
60  
40  
20  
0
10  
8
10  
Common emitter  
Common emitter  
Tc = −40°C  
15  
20  
8
Tc = 25 °C  
10  
20  
6
40  
60  
I
= 80 A  
C
6
5
4
2
V
GE  
= 4 V  
0
0
0
2
4
6
8
10  
24  
12  
4
8
12  
16  
20  
24  
Collector-emitter voltage  
V
(V)  
Gate-emitter voltage  
V
(V)  
CE  
GE  
V
− V  
V
− V  
CE GE  
CE  
GE  
10  
8
10  
8
Common emitter  
Common emitter  
Tc = 25°C  
Tc = 125°C  
10  
20  
10  
6
6
I
= 80 A  
C
I
= 80 A  
C
20  
40  
60  
40  
60  
4
4
2
2
0
0
0
0
4
8
12  
16  
20  
4
8
12  
16  
20  
24  
Gate-emitter voltage  
V
(V)  
Gate-emitter voltage  
V
(V)  
GE  
GE  
I
− V  
V
− Tc  
CE (sat)  
C
GE  
100  
80  
60  
40  
20  
0
4
3
2
1
Common emitter  
= 5 V  
Common emitter  
V
CE  
V
= 15 V  
GE  
80  
50  
30  
I
= 10 A  
C
Tc = 125°C  
25  
−40  
0
−40  
0
2
4
6
8
10  
0
40  
80  
120  
160  
Gate-emitter voltage  
V
(V)  
Case temperature Tc (°C)  
GE  
2000-06-28 2/4  
GT80J101A  
V
, V  
CE GE  
− Q  
Switching time – R  
G
G
20  
16  
12  
8
10  
Common emitter  
= 300 V  
Common emitter  
= 1.88 Ω  
V
CC  
R
L
5
3
I
= 80 A  
C
Tc = 25°C  
V
GG  
=
15 V  
t
t
off  
on  
Tc = 25°C  
V
CE  
= 150 V  
t
t
1
r
f
0.5  
0.3  
100  
50  
4
0
0
80  
160  
240  
320  
0.1  
3
5
10  
30  
50  
100  
300 500  
Gate charge  
Q
G
(nC)  
Gate resistance  
R
G
(Ω)  
Switching time – I  
C − V  
CE  
C
5
3
30000  
10000  
Common emitter  
V = 300 V  
CC  
= 33 Ω  
R
G
V
= 15 V  
GG  
5000  
3000  
Tc = 25°C  
C
ies  
1
0.5  
0.3  
t
t
off  
on  
1000  
500  
300  
C
oes  
Common emitter  
t
f
V
GE  
= 0 V  
t
r
f = 1 MHz  
Tc = 25°C  
0.1  
0
100  
50  
C
res  
10  
20  
30  
40  
50  
60  
70  
80  
Collector current  
I
(A)  
C
1
3
5
10  
30 50  
100  
300 500  
Collector-emitter voltage  
V
(V)  
CE  
Safe Operating Area  
* Single Non-Repetitive Pulse Tc = 25°C  
Curves must be Derated Linearly with Increase in  
Temperature.  
R
− t  
w
th (t)  
200  
100  
2
1
0
1
2
3
I
max  
1 µs *  
C
10  
10  
(Pulsed)  
10 µs *  
Tc = 25 °C  
100 µs *  
I
max  
C
(Continuous)  
30  
10  
10  
DC  
Operation  
−
10  
3
1
10 ms *  
1 ms *  
−
10  
10  
−
5
−
4
−
3
−
2
−
1
−
0
1
2
10  
1
3
10  
30  
100  
300  
1000  
10  
10  
10  
10  
10  
10  
10  
Collector-emitter voltage  
V
(V)  
Pulse width  
t
(s)  
CE  
w
2000-06-28 3/4  
GT80J101A  
Reverse Bias SOA  
300  
100  
30  
10  
3
1
<
=
T
125°C  
j
V
= +15 V  
−0  
= 33 Ω  
GE  
0.3  
0.1  
R
G
0
100  
200  
300  
400  
500  
600  
700  
Collector-emitter voltage  
V
(V)  
CE  
2000-06-28 4/4  

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